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How to Reliably Measure Carrier Mobility in Highly Resistive Lead Halide Perovskites with Photo-Hall Experiment
Authors:
Soumen Kundu,
Yeswanth Pattipati,
Krishnamachari Lakshmi Narasimhan,
Sushobhan Avasthi
Abstract:
Mobility measurements in highly resistive methylammonium lead iodide (MAPI) are challenging due to high impedance, ion drift, and low mobility. We show that we can address the challenge using intensity-dependent photo-Hall measurements. The key is an improved photo-Hall setup, which enables reliable Hall measurements in the dark and under low-intensity illumination. By tuning the illumination over…
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Mobility measurements in highly resistive methylammonium lead iodide (MAPI) are challenging due to high impedance, ion drift, and low mobility. We show that we can address the challenge using intensity-dependent photo-Hall measurements. The key is an improved photo-Hall setup, which enables reliable Hall measurements in the dark and under low-intensity illumination. By tuning the illumination over four orders of magnitude, we get the additional information to simultaneously extract hole mobility, electron mobility, and background doping. For the first time, we show that a MAPI single crystal, exhibiting n-type behaviour in the dark, can show p-type behaviour under light due to the difference in hole and electron mobility. The data partly explains the variability in mobility reported in the literature. We show that one can erroneously extract any mobility from 0 to 25 cm2/Vs if we restrict the experiment to a small range of illumination intensities. For our MAPI (310) crystal, the measured hole and electron mobility is 40 cm2/Vs and 25.5 cm2/Vs, respectively.
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Submitted 2 April, 2025;
originally announced April 2025.
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Visualization of carrier transport in lateral metal-perovskite-metal structures and its influence on device operation
Authors:
N. Ganesh,
A. Z. Ashar,
Sumukh Purohit,
K. L. Narasimhan,
K. S. Narayan
Abstract:
The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devi…
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The high performance of hybrid perovskite based devices is attributed to its excellent bulk-transport properties. However, carrier dynamics, especially at the metal-perovskite interface, and its influence on device operation are not widely understood. This work presents the dominant transport mechanisms in methylammonium lead iodide (MAPbI3) perovskite-based asymmetric metal-electrode lateral devices. The device operation is studied with inter-electrode lengths varying from 4 μm to 120 μm. Device characteristics indicate distinct ohmic and space-charge limited current (SCLC) regimes that are controlled by the inter-electrode length and applied bias. The electric-potential mapping using Kelvin-Probe microscopy across the device indicates minimal ion-screening effects and the presence of a transport barrier at the metal-MAPbI3 junction. Further, photocurrent imaging of the channel using near-field excitation-scanning microscopy reveals dominant recombination and charge-separation zones. These lateral devices exhibit photodetector characteristics with a responsivity of about 51 mA/W in self-powered mode and 5.2 A/W at 5 V bias, in short-channel devices (4 μm). The low device capacitance enables a fast light-switching response of ~12 ns.
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Submitted 24 February, 2022;
originally announced February 2022.
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Impact of Trap Filling on Carrier Diffusion in MAPbBr$_3$ Single Crystals
Authors:
N. Ganesh,
Anaranya Ghorai,
Shrreya Krishnamurthy,
Suman Banerjee,
K. L. Narasimhan,
Satishchandra B. Ogale,
K. S. Narayan
Abstract:
We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter,…
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We present experimental evidence showing that the effective carrier diffusion length ($L_d$) and lifetime ($τ$) depend on the carrier density in MAPbBr$_3$ single crystals. Independent measurements reveal that both $L_d$ and $τ$ decrease with an increase in photo-carrier density. Scanning photocurrent microscopy is used to extract the characteristic photocurrent $I_{ph}$ decay-length parameter, $L_d$, which is a measure of effective carrier diffusion. The $L_d$ magnitudes for electrons and holes were determined to be ~ 13.3 $μ$m and ~ 13.8 $μ$m respectively. A marginal increase in uniform light bias ($\leq 5 \times 10^{15}$ photons/cm$^2$) increases the modulated photocurrent magnitude and reduces the $L_d$ parameter by a factor of two and three for electrons and holes respectively, indicating that the recombination is not monomolecular. The $L_d$ variations were correlated to the features in photoluminescence lifetime studies. Analysis of lifetime variation shows intensity-dependent monomolecular and bimolecular recombination trends with recombination constants determined to be ~ 9.3 $\times 10^6$ s$^{-1}$ and ~ 1.4 $\times 10^{-9}$ cm$^{3}$s$^{-1}$ respectively. Based on the trends of $L_d$ and lifetime, it is inferred that the sub-band-gap trap recombination influences carrier transport in the low-intensity excitation regime, while bimolecular recombination and transport dominate at high intensity.
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Submitted 26 July, 2020;
originally announced July 2020.
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Doped Polyaniline: A Possible Anode for Organic Electronics
Authors:
Akshaya K. Palai,
N. Periasamy,
Meghan P. Patankar,
K. L. Narasimhan
Abstract:
Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole injecting properties of doped PANI in OLED devices using it as an anode. From these results we conclude that hole doped PANI layers can be used as a low contact resist…
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Polymer based printable organic thin film transistor (OTFT) is a viable low cost alternative to amorphous silicon based thin film transistors and possesses light-weight and flexibility advantage. In this paper, we report on the hole injecting properties of doped PANI in OLED devices using it as an anode. From these results we conclude that hole doped PANI layers can be used as a low contact resistance source and drain electrode material for polymer OTFTs.
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Submitted 3 December, 2013;
originally announced December 2013.
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Study of F4TCNQ dopant diffusion using transport measurements in organic semiconductors
Authors:
Meghan P. Patankar,
Kapil Joshi,
K. L. Narasimhan
Abstract:
In this paper, we report on electrical transport in F4TCNQ doped organic semiconductor (host) materials. By monitoring the conductance of the sample in-situ during and after deposition, we show that sequential deposition of F4TCNQ and host semiconductor results in bulk doping of the semiconductor. In addition, the doping density (and conductivity) of the host can be easily controlled by adjusting…
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In this paper, we report on electrical transport in F4TCNQ doped organic semiconductor (host) materials. By monitoring the conductance of the sample in-situ during and after deposition, we show that sequential deposition of F4TCNQ and host semiconductor results in bulk doping of the semiconductor. In addition, the doping density (and conductivity) of the host can be easily controlled by adjusting the thickness of the bottom F4TCNQ layer. This alternative scheme for doping is simpler than the conventional way of doping small molecules which involves simultaneous co-evaporation of host and dopant. In the sequential doping scheme outlined here, bulk doping of the host takes place due to rapid diffusion of F4TCNQ in the host material. The motion of F4TCNQ in the host is complex and is not always described by a simple diffusion process. In situ transport measurements provide a quick and easy way of measuring dopant diffusion in new hosts. Based on the doping results, we also outline a possible route to improved transconductance for organic thin film transistors in a manufacturing environment.
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Submitted 1 December, 2013;
originally announced December 2013.
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Bulk and contact-sensitized photocarrier generation in single layer TPD devices
Authors:
Debdutta Ray,
Meghan P. Patankar,
Gottfried H. Dohler,
K. L. Narasimhan
Abstract:
In this paper, we report on the photoelectronic properties of TPD studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the hole mobility and "tau" the carrier trapping time. The "mew-tau" product is a measure of the electronic quality of the material and allows a quantitative comparison of d…
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In this paper, we report on the photoelectronic properties of TPD studied in sandwich geometry. In particular, we have obtained from both forward and reverse bias measurements the "mew-tau" product for holes in TPD. "mew" is the hole mobility and "tau" the carrier trapping time. The "mew-tau" product is a measure of the electronic quality of the material and allows a quantitative comparison of different samples. We have carried out numerical simulations to understand the photocurrent in these structures. We show that in reverse bias, the photocurrent (PC) is due to bulk. The carrier generation is governed by field assisted exciton dissociation at electric fields greater than 10^6 V/cm. At lower fields the generation of carriers occurs spontaneously in the bulk of the sample. In forward bias, the photocurrent is due to exciton dissociation at the ITO contact. We also obtain a "mew-tau" product for holes from forward bias PC measurements which is in agreement with the value obtained from reverse bias measurements. Based on our experiments, we demonstrate that TPD in a sandwich structure is a good candidate for cheap large area solar blind UV detector arrays.
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Submitted 7 August, 2006;
originally announced August 2006.
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Photoconduction in Alq3
Authors:
Debdutta Ray,
Meghan P. Patankar,
N. Periasamy,
K. L. Narasimhan
Abstract:
Photoelectronic properties of Alq3 were studied by photoconductivity measurements in thin film, sandwich (ITO/Alq3/LiF/Al) devices. We find that the photocurrent is dominated by bulk generation of carriers for incident photon energies greater than 2.75 eV. The quantum efficiency of photocarrier generation has been measured from carrier collection measurements to be about 10%. The quantum efficie…
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Photoelectronic properties of Alq3 were studied by photoconductivity measurements in thin film, sandwich (ITO/Alq3/LiF/Al) devices. We find that the photocurrent is dominated by bulk generation of carriers for incident photon energies greater than 2.75 eV. The quantum efficiency of photocarrier generation has been measured from carrier collection measurements to be about 10%. The quantum efficiency is largely independent of electric field. This enables a direct measurement of the electric field dependence of mobility using photoconductivity measurements, which is used for quantitative analysis of the dark forward current in these devices. Photoconductivity measurements were also used to obtain (μ_{0n} τ_n) product which can be used as a measure of material quality. For Alq3, we find that the value of (μ_{0n} τ_n) product was between 3x10^{-15} cm^2/V to 8x10^{-15} cm^2/V for different samples. In forward bias, at high field the photocurrent shows saturation accompanied by a phase shift. These effects are attributed to space charge effects in the device.
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Submitted 18 May, 2005;
originally announced May 2005.
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A Model for the Optical Absorption in Porous Silicon Quantum Wires
Authors:
Shouvik Datta,
K. L. Narasimhan
Abstract:
In this paper, we analyse the optical absorption in porous silicon . This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of such low dimensional nanostructures like porous silicon from a Tauc plot of Square Root(alpha h nu) vs (h nu) . These objections are also valid for other reduced dimensional systems like quantum wires and quantum dots etc.
S…
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In this paper, we analyse the optical absorption in porous silicon . This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of such low dimensional nanostructures like porous silicon from a Tauc plot of Square Root(alpha h nu) vs (h nu) . These objections are also valid for other reduced dimensional systems like quantum wires and quantum dots etc.
So we model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the absorption we specifically need to invoke - (a) k is not conserved in optical transitions,(b) the oscillator strength of these transitions depends on the size of the nanostructure in which the absorption takes place and (c) the distribution of band gaps significantly influences the optical absorption. A natural explanation of the temperature dependence of absorption in porous silicon also follows from our model . We have also shown that porosity can be inferred non-destructively from transmission measurements in the region of low absorption.
One can easily generalize our equations and use them to analyse the absorption process of other low dimensional materials too .
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Submitted 8 April, 1999;
originally announced April 1999.
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A Model for the Optical Absorption in Pororus Silicon
Authors:
Shouvik Datta,
K. L. Narasimhan
Abstract:
In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the absorption we specifically need to invoke - (a) k is not conserved in optical transitions, (b) the oscillator strength of these transitions depends on the size of…
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In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the absorption we specifically need to invoke - (a) k is not conserved in optical transitions, (b) the oscillator strength of these transitions depends on the size of the nanostructure in which absorption takes place and (c) the distribution of band gaps significantly influences the optical absorption. We also show that it is not possible to extract the band gap of porous silicon from a plot of $\sqrt{α\hbarω}$ vs $\hbarω$.
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Submitted 20 February, 1999;
originally announced February 1999.
