Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Authors:
Jacopo Frigerio,
Andrea Ballabio,
Giovanni Isella,
Emilie Sakat,
Paolo Biagioni,
Monica Bollani,
Enrico Napolitani,
Costanza Manganelli,
Michele Virgilio,
Alexander Grupp,
Marco P. Fischer,
Daniele Brida,
Kevin Gallacher,
Douglas J. Paul,
Leonetta Baldassarre,
Paolo Calvani,
Valeria Giliberti,
Alessandro Nucara,
Michele Ortolani
Abstract:
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, f…
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Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pumping in the near-infrared, we found weak but significant dependence of relaxation times on the static doping level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.
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Submitted 20 January, 2016;
originally announced January 2016.
Extended point defects in crystalline materials: Ge and Si
Authors:
Nick E. B. Cowern,
Sergei Simdyankin,
Chihak Ahn,
Nick S. Bennett,
Jonathan P. Goss,
Jean-Michel Hartmann,
Ardechir Pakfar,
Silke Hamm,
Jérôme Valentin,
Enrico Napolitani,
Davide De Salvador,
Elena Bruno,
Salvatore Mirabella
Abstract:
B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Com…
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B diffusion measurements are used to probe the basic nature of self-interstitial 'point' defects in Ge. We find two distinct self-interstitial forms - a simple one with low entropy and a complex one with entropy ~30 k at the migration saddle point. The latter dominates diffusion at high temperature. We propose that its structure is similar to that of an amorphous pocket - we name it a 'morph'. Computational modelling suggests that morphs exist in both self-interstitial and vacancy-like forms, and are crucial for diffusion and defect dynamics in Ge, Si and probably many other crystalline solids.
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Submitted 12 March, 2013; v1 submitted 10 October, 2012;
originally announced October 2012.
