Showing 1–14 of 14 results for author: Nanot, S

Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors

Authors: K. Dinar, J. Delgado-Notario, C. Bray, K. Maussang, E. Perez-Martin, B. Benhamou-Bui, C. Consejo, S. Ruffenach, S. S. Krishtopenko, L. Bonnet, M. Paillet, J. Torres, Y. M. Meziani, I. Rozhansky, B. Jouault, S. Nanot, F. Teppe

Abstract: It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we… ▽ More It has recently been shown that Terahertz sensors can effectively detect the spin resonances of Dirac fermions in graphene. The associated photovoltaic measurement technique allows for the investigation of the intrinsic spin-orbit coupling in graphene as well as its topological properties from microwave to Terahertz frequencies. In this work, using graphene/MoS2-based Field-Effect Transistors, we observed a magnetic resonance photovoltage signal in the Gigahertz range that is independent of the gate bias. The dispersion of the associated spin-flip transitions remains intriguingly unaffected by the MoS2 layer. In parallel, the spin-related signal consistently appears as a drop in photovoltage, regardless of the signal's polarity or origin, whether it arises from plasma wave rectification or thermoelectric effects. This behavior is interpreted as a decrease in the system's spin polarization due to spin-dependent recombination or scattering of photocarriers. Understanding the various photovoltaic signals in highly sensitive Gigahertz/Terahertz sensors paves the way for exploring spin-dependent mechanisms in two-dimensional quantum materials, influenced by proximity effects such as spin-orbit coupling, topology, and magnetism. △ Less

Submitted 17 May, 2025; v1 submitted 25 November, 2024; originally announced November 2024.

Comments: 23 pages, 6 figures in the main text and 6 in the supplementary materials

Journal ref: Phys. Rev. Applied 23, 044043 (2025)

Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence

Authors: S. Benlenqwanssa, S. S. Krishtopenko, M. Meyer, B. Benhamou-Bui, L. Bonnet, A. Wolf, C. Bray, C. Consejo, S. Ruffenach, S. Nanot, J. -B. Rodriguez, E. Tournié, F. Hartmann, S. Höfling, F. Teppe, B. Jouault

Abstract: We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topolog… ▽ More We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topological gap, but also allows the temperature dependence of bulk and edge conductivity to be evaluated separately. The temperature dependence of the edge conductivity for Hall bar channels from 10 $μ$m to 70~$μ$m in the range of 1.5 K to 45 K is consistent with the theoretical expectation of weakly interacting helical edge electrons with backscattering due to localized magnetic moments of charge impurities. We argue that these charge impurities are naturally associated with intrinsic Ga-antisite defects, which act as double acceptors in InAs/Ga(In)Sb-based QWs. △ Less

Submitted 29 October, 2024; originally announced October 2024.

Journal ref: Phys. Rev. Applied 22, 064059 (2024)

Giant enhancement of third-harmonic generation in graphene-metal heterostructures

Authors: Irati Alonso Calafell, Lee A. Rozema, David Alcaraz Iranzo, Alessandro Trenti, Joel D. Cox, Avinash Kumar, Hlib Bieliaiev, Sebastian Nanot, Cheng Peng, Dmitri K. Efetov, Jin Yong Hong, Jing Kong, Dirk R. Englund, F. Javier García de Abajo, Frank H. L. Koppens, Philp Walther

Abstract: Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonli… ▽ More Nonlinear nanophotonics leverages engineered nanostructures to funnel light into small volumes and intensify nonlinear optical processes with spectral and spatial control. Due to its intrinsically large and electrically tunable nonlinear optical response, graphene is an especially promising nanomaterial for nonlinear optoelectronic applications. Here we report on exceptionally strong optical nonlinearities in graphene-insulator-metal heterostructures, demonstrating an enhancement by three orders of magnitude in the third-harmonic signal compared to bare graphene. Furthermore, by increasing the graphene Fermi energy through an external gate voltage, we find that graphene plasmons mediate the optical nonlinearity and modify the third-harmonic signal. Our findings show that graphene-insulator-metal is a promising heterostructure for optically-controlled and electrically-tunable nano-optoelectronic components. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Journal ref: Nature Nanotechnology 16, 318-324, (2021)

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

Authors: C. Avogadri, S. Gebert, S. S. Krishtopenko, I. Castillo, C. Consejo, S. Ruffenach, C. Roblin, C. Bray, Y. Krupko, S. Juillaguet, S. Contreras, S. Juillaguet, A. Wolf, F. Hartmann, S. Höfling, G. Boissier, J. B. Rodriguez, S. Nanot, E. Tournié, F. Teppe, B. Jouault

Abstract: Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature… ▽ More Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Probing the Ultimate Plasmon Confinement Limits with a Van der Waals heterostructure

Authors: David Alcaraz Iranzo, Sebastien Nanot, Eduardo J. C. Dias, Itai Epstein, Cheng Peng, Dmitri K. Efetov, Mark B. Lundeberg, Romain Parret, Johann Osmond, Jin-Yong Hong, Jing Kong, Dirk R. Englund, Nuno M. R. Peres, Frank H. L. Koppens

Abstract: The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing and nanoscale lasers. While plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon con… ▽ More The ability to confine light into tiny spatial dimensions is important for applications such as microscopy, sensing and nanoscale lasers. While plasmons offer an appealing avenue to confine light, Landau damping in metals imposes a trade-off between optical field confinement and losses. We show that a graphene-insulator-metal heterostructure can overcome that trade-off, and demonstrate plasmon confinement down to the ultimate limit of the lengthscale of one atom. This is achieved by far-field excitation of plasmon modes squeezed into an atomically thin hexagonal boron nitride dielectric h-BN spacer between graphene and metal rods. A theoretical model which takes into account the non-local optical response of both graphene and metal is used to describe the results. These ultra-confined plasmonic modes, addressed with far-field light excitation, enables a route to new regimes of ultra-strong light-matter interactions. △ Less

Submitted 3 April, 2018; originally announced April 2018.

Comments: 17 pages, 4 figures

Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point

Authors: A. Nachawaty, M. Yang, W. Desrat, S. Nanot, B. Jabakhanji, D. Kazazis, R. Yakimova, A. Cresti, W. Escoffier, B. Jouault

Abstract: We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to… ▽ More We have investigated the disorder of epitaxial graphene close to the charge neutrality point (CNP) by various methods: i) at room temperature, by analyzing the dependence of the resistivity on the Hall coefficient ; ii) by fitting the temperature dependence of the Hall coefficient down to liquid helium temperature; iii) by fitting the magnetoresistances at low temperature. All methods converge to give a disorder amplitude of $(20 \pm 10)$ meV. Because of this relatively low disorder, close to the CNP, at low temperature, the sample resistivity does not exhibit the standard value $\simeq h/4e^2$ but diverges. Moreover, the magnetoresistance curves have a unique ambipolar behavior, which has been systematically observed for all studied samples. This is a signature of both asymmetry in the density of states and in-plane charge transfer. The microscopic origin of this behavior cannot be unambiguously determined. However, we propose a model in which the SiC substrate steps qualitatively explain the ambipolar behavior. △ Less

Submitted 23 August, 2017; originally announced August 2017.

Comments: accepted for publication in Physical Review B

Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride

Authors: Achim Woessner, Romain Parret, Diana Davydovskaya, Yuanda Gao, Jhih-Sheng Wu, Mark B. Lundeberg, Sébastien Nanot, Pablo Alonso-González, Kenji Watanabe, Takashi Taniguchi, Rainer Hillenbrand, Michael M. Fogler, James Hone, Frank H. L. Koppens

Abstract: Light properties in the mid-infrared can be controlled at a deep subwavelength scale using hyperbolic phonons-polaritons (HPPs) of hexagonal boron nitride (h-BN). While propagating as waveguided modes HPPs can concentrate the electric field in a chosen nano-volume. Such a behavior is at the heart of many applications including subdiffraction imaging and sensing. Here, we employ HPPs in heterostruc… ▽ More Light properties in the mid-infrared can be controlled at a deep subwavelength scale using hyperbolic phonons-polaritons (HPPs) of hexagonal boron nitride (h-BN). While propagating as waveguided modes HPPs can concentrate the electric field in a chosen nano-volume. Such a behavior is at the heart of many applications including subdiffraction imaging and sensing. Here, we employ HPPs in heterostructures of h-BN and graphene as new nano-optoelectronic platform by uniting the benefits of efficient hot-carrier photoconversion in graphene and the hyperbolic nature of h-BN. We demonstrate electrical detection of HPPs by guiding them towards a graphene pn-junction. We shine a laser beam onto a gap in metal gates underneath the heterostructure, where the light is converted into HPPs. The HPPs then propagate as confined rays heating up the graphene leading to a strong photocurrent. This concept is exploited to boost the external responsivity of mid-infrared photodetectors, overcoming the limitation of graphene pn-junction detectors due to their small active area and weak absorption. Moreover this type of detector exhibits tunable frequency selectivity due to the HPPs, which combined with its high responsivity paves the way for efficient high-resolution mid-infrared imaging. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Journal ref: npj 2D Materials and Applications 1, 25 (2017)

Self-aligned local electrolyte gating of 2D materials with nanoscale resolution

Authors: Cheng Peng, Dmitri K. Efetov, Sebastien Nanot, Ren-Jye Shiue, Gabriele Grosso, Yafang Yang, Marek Hempel, Pablo Jarillo-Herrero, Jing Kong, Frank H. L. Koppens, Dirk Englund

Abstract: In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits t… ▽ More In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits the gating strength, boundary sharpness, and pitch size of periodic structures, and restricts possible geometries of local gates (due to wire packaging), precluding certain device concepts, such as plasmonics and transformation optics based on metamaterials. Here we present a new gating concept based on a dielectric-free self-aligned electrolyte technique that allows spatially modulating charges with nanometer resolution. We employ a combination of a solid-polymer electrolyte gate and an ion-impenetrable e-beam-defined resist mask to locally create excess charges on top of the gated surface. Electrostatic simulations indicate high carrier density variations of $Δn =10^{14}\text{cm}^{-2}$ across a length of 10 nm at the mask boundaries on the surface of a 2D conductor, resulting in a sharp depletion region and a strong in-plane electric field of $6\times10^8 \text{Vm}^{-1}$ across the so-created junction. We apply this technique to the 2D material graphene to demonstrate the creation of tunable p-n junctions for optoelectronic applications. We also demonstrate the spatial versatility and self-aligned properties of this technique by introducing a novel graphene thermopile photodetector. △ Less

Submitted 27 October, 2016; v1 submitted 24 October, 2016; originally announced October 2016.

Mid-infrared pyro-resistive graphene detector on LiNbO3

Authors: Kavitha K. Gopalan, Davide Janner, Sebastien Nanot, Romain Parret, Mark B. Lundeberg, Frank H. L. Koppens, Valerio Pruneri

Abstract: Mid-infrared (mid-IR) photo-detection has been recently growing in importance because of its multiple applications, including vibrational spectroscopy and thermal imaging. We propose and demonstrate a novel pyro-resistive photo-detection platform that combines a ferroelectric substrate (a z-cut LiNbO3 crystal) and a graphene layer transferred on top of its surface with electrical connections. Upon… ▽ More Mid-infrared (mid-IR) photo-detection has been recently growing in importance because of its multiple applications, including vibrational spectroscopy and thermal imaging. We propose and demonstrate a novel pyro-resistive photo-detection platform that combines a ferroelectric substrate (a z-cut LiNbO3 crystal) and a graphene layer transferred on top of its surface with electrical connections. Upon strong light absorption in the LiNbO3 substrate and the subsequent temperature increase, via the pyroelectric effect, polarization (bound) charges form at the crystal surface. These causes doping into graphene which in turn changes its carrier density and conductivity. In this way, by monitoring the graphene electrical resistance one can measure the incident optical power. . Detectivities of about 10^5 cm sqrt(Hz)/W in the 6 to 10 microns wavelength region are demonstrated.We explain the underlying physical mechanism of the pyro-resistive photo-detection and propose a model that reproduces accurately the experimental results. We also show that up to two orders of magnitude larger detectivity can be achieved by optimising the geometry and operating in vacuum, thus opening the path to a new class of mid-IR photo-detectors that can challenge classical HgCdTe devices, especially in real applications where cooling is to be avoided and low cost is crucial. △ Less

Submitted 7 September, 2016; originally announced September 2016.

Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Authors: U. Sassi, R. Parret, S. Nanot, M. Bruna, S. Borini, S. Milana, D. De Fazio, Z. Zhuang, E. Lidorikis, F. H. L. Koppens, A. C. Ferrari, A. Colli

Abstract: Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for g… ▽ More Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene, leading to a temperature coefficient of resistance up to 900%/K, two orders of magnitude higher than the state of the art, for a device area of 300x300um2. This is achieved by fabricating a floating metallic structure that concentrates the charge generated by the pyroelectric substrate on the top-gate capacitor of the graphene channel. This allows us to resolve temperature variations down to 15umK at 1 Hz, paving the way for a new generation of detectors for MIR imaging and spectroscopy △ Less

Submitted 1 August, 2016; originally announced August 2016.

Journal ref: Nature Communications 8, 14311 (2017)

Phonon-mediated mid-infrared photoresponse of graphene

Authors: Michela Badioli, Achim Woessner, Klaas-Jan Tielrooij, Sébastien Nanot, Gabriele Navickaite, Tobias Stauber, F. Javier García de Abajo, Frank H. L. Koppens

Abstract: The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spa… ▽ More The photoresponse of graphene at mid-infrared frequencies is of high technological interest and is governed by fundamentally different underlying physics than the photoresponse at visible frequencies, as the energy of the photons and substrate phonons involved have comparable energies. Here we perform a spectrally resolved study of the graphene photoresponse for mid-infrared light by measuring spatially resolved photocurrent over a broad frequency range (1000-1600 cm$^{-1}$). We unveil the different mechanisms that give rise to photocurrent generation in graphene on a polar substrate. In particular, we find an enhancement of the photoresponse when the light excites bulk or surface phonons of the SiO$_2$ substrate. This work paves the way for the development of graphene-based mid-infrared thermal sensing technology. △ Less

Submitted 18 January, 2016; originally announced January 2016.

Journal ref: Nano Letters 14 (11), 6374-6381 (2014)

Electrical Control of Optical Emitter Relaxation Pathways enabled by Graphene

Authors: K. J. Tielrooij, L. Orona, A. Ferrier, M. Badioli, G. Navickaite, S. Coop, S. Nanot, B. Kalinic, T. Cesca, L. Gaudreau, Q. Ma, A. Centeno, A. Pesquera, A. Zurutuza, H. de Riedmatten, P. Goldner, F. J. García de Abajo, P. Jarillo-Herrero, F. H. L. Koppens

Abstract: Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active contro… ▽ More Controlling the energy flow processes and the associated energy relaxation rates of a light emitter is of high fundamental interest, and has many applications in the fields of quantum optics, photovoltaics, photodetection, biosensing and light emission. While advanced dielectric and metallic systems have been developed to tailor the interaction between an emitter and its environment, active control of the energy flow has remained challenging. Here, we demonstrate in-situ electrical control of the relaxation pathways of excited erbium ions, which emit light at the technologically relevant telecommunication wavelength of 1.5 $μ$m. By placing the erbium at a few nanometres distance from graphene, we modify the relaxation rate by more than a factor of three, and control whether the emitter decays into either electron-hole pairs, emitted photons or graphene near-infrared plasmons, confined to $<$15 nm to the sheet. These capabilities to dictate optical energy transfer processes through electrical control of the local density of optical states constitute a new paradigm for active (quantum) photonics. △ Less

Submitted 3 October, 2014; originally announced October 2014.

Comments: 9 pages, 4 figures

Journal ref: Nature Phys. 11, 281 (2015)

Terahertz Dynamics of Quantum-Confined Electrons in Carbon Nanomaterials

Authors: L. Ren, Q. Zhang, S. Nanot, I. Kawayama, M. Tonouchi, J. Kono

Abstract: Low-dimensional carbon nanostructures, such as single-wall carbon nanotubes (SWCNTs) and graphene, offer new opportunities for terahertz science and technology. Being zero-gap systems with a linear, photon-like energy dispersion, metallic SWCNTs and graphene exhibit a variety of extraordinary properties. Their DC and linear electrical properties have been extensively studied in the last decade, bu… ▽ More Low-dimensional carbon nanostructures, such as single-wall carbon nanotubes (SWCNTs) and graphene, offer new opportunities for terahertz science and technology. Being zero-gap systems with a linear, photon-like energy dispersion, metallic SWCNTs and graphene exhibit a variety of extraordinary properties. Their DC and linear electrical properties have been extensively studied in the last decade, but their unusual finite-frequency, nonlinear, and/or non-equilibrium properties are largely unexplored, although they are predicted to be useful for new terahertz device applications. Terahertz dynamic conductivity measurements allow us to probe the dynamics of such photon-like electrons, or massless Dirac fermions. Here, we use terahertz time-domain spectroscopy and Fourier transform infrared spectroscopy to investigate terahertz conductivities of one-dimensional and two-dimensional electrons, respectively, in films of highly aligned SWCNTs and gated large-area graphene. In SWCNTs, we observe extremely anisotropic terahertz conductivities, promising for terahertz polarizer applications. In graphene, we demonstrate that terahertz and infrared properties sensitively change with the Fermi energy, which can be controlled by electrical gating and thermal annealing. △ Less

Submitted 28 May, 2012; originally announced May 2012.

Comments: 16 pages, 9 figures

Journal ref: Journal of Infrared, Millimeter, and Terahertz Waves 33, 846 (2012)

Terahertz and Infrared Spectroscopy of Gated Large-Area Graphene

Authors: Lei Ren, Qi Zhang, Jun Yao, Zhengzong Sun, Ryosuke Kaneko, Zheng Yan, Sebastien L. Nanot, Zhong Jin, Iwao Kawayama, Masayoshi Tonouchi, James M. Tour, Junichiro Kono

Abstract: We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm^{-1}), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods w… ▽ More We have fabricated a centimeter-size single-layer graphene device, with a gate electrode, which can modulate the transmission of terahertz and infrared waves. Using time-domain terahertz spectroscopy and Fourier-transform infrared spectroscopy in a wide frequency range (10-10000 cm^{-1}), we measured the dynamic conductivity change induced by electrical gating and thermal annealing. Both methods were able to effectively tune the Fermi energy, E_F, which in turn modified the Drude-like intraband absorption in the terahertz as well as the '2E_F onset' for interband absorption in the mid-infrared. These results not only provide fundamental insight into the electromagnetic response of Dirac fermions in graphene but also demonstrate the key functionalities of large-area graphene devices that are desired for components in terahertz and infrared optoelectronics. △ Less

Submitted 21 April, 2012; originally announced April 2012.

Journal ref: Nano Letters 12, 3711 (2012)