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Substrate free synthesis of graphene nanoflakes by atmospheric pressure chemical vapour deposition using Ni powder as a catalyst
Authors:
Joydip Sengupta,
Kaustuv Das,
U N Nandi,
Chacko Jacob
Abstract:
Graphene nanoflakes (GNFs) were synthesized by atmospheric pressure chemical vapour deposition of propane (C3H8) employing Ni (salen) powder without the introduction of a substrate. The graphitic nature of the GNFs was examined by an X-ray diffraction method. Scanning electron microscopy results revealed that GNFs were stacked on top of one another and had a high aspect ratio. Transmission electro…
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Graphene nanoflakes (GNFs) were synthesized by atmospheric pressure chemical vapour deposition of propane (C3H8) employing Ni (salen) powder without the introduction of a substrate. The graphitic nature of the GNFs was examined by an X-ray diffraction method. Scanning electron microscopy results revealed that GNFs were stacked on top of one another and had a high aspect ratio. Transmission electron microscopy studies suggested that the GNFs were made up of a number of crystalline graphene layers, some of which were even single crystalline as evident from the selected area diffraction pattern. Finally, Raman spectroscopy confirmed the high quality of the GNFs.
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Submitted 9 September, 2019;
originally announced September 2019.
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Universal scaling in disordered systems and non-universal exponents
Authors:
K. K. Bardhan,
D. Talukdar,
U. N. Nandi,
C. D. Mukherjee
Abstract:
The effect of an electric field on conduction in a disordered system is an old but largely unsolved problem. Experiments cover an wide variety of systems - amorphous/doped semiconductors, conducting polymers, organic crystals, manganites, composites, metallic alloys, double perovskites - ranging from strongly localized systems to weakly localized ones, from strongly correlated ones to weakly corre…
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The effect of an electric field on conduction in a disordered system is an old but largely unsolved problem. Experiments cover an wide variety of systems - amorphous/doped semiconductors, conducting polymers, organic crystals, manganites, composites, metallic alloys, double perovskites - ranging from strongly localized systems to weakly localized ones, from strongly correlated ones to weakly correlated ones. Theories have singularly failed to predict any universal trend resulting in separate theories for separate systems. Here we discuss an one-parameter scaling that has recently been found to give a systematic account of the field-dependent conductance in two diverse, strongly localized systems of conducting polymers and manganites. The nonlinearity exponent, \textit{x} associated with the scaling was found to be nonuniversal and exhibits structure. For two-dimensional (2D) weakly localized systems, the nonlinearity exponent \textbf{\textit{x}} is $\geqslant 7$ and is roughly inversely proportional to the sheet resistance. Existing theories of weak localization prove to be adequate and a complete scaling function is derived. In a 2D strongly localized system a temperature-induced scaling-nonscaling transition (SNST) is revealed. For three-dimensional (3D) strongly localized systems the exponent lies between -1 and 1, and surprisingly is quantized (\textit{x} $\approx$ 0.08 \textit{n}). This poses a serious theoretical challenge. Various results are compared with predictions of the existing theories.
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Submitted 10 March, 2014; v1 submitted 30 April, 2013;
originally announced May 2013.
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Scaling of NonOhmic Conduction in Strongly Correlated Systems
Authors:
D. Talukdar,
U. N. Nandi,
A. Poddar,
P. Mandal,
K. K. Bardhan
Abstract:
A new scaling formalism is used to analyze nonlinear I-V data in the vicinity of metal-insulator transitions (MIT) in five manganite systems. An exponent, called the nonlinearity exponent, and an onset field for nonlinearity, both characteristic of the system under study, are obtained from the analysis. The onset field is found to have an anomalously low value corroborating the theoretically predi…
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A new scaling formalism is used to analyze nonlinear I-V data in the vicinity of metal-insulator transitions (MIT) in five manganite systems. An exponent, called the nonlinearity exponent, and an onset field for nonlinearity, both characteristic of the system under study, are obtained from the analysis. The onset field is found to have an anomalously low value corroborating the theoretically predicted electronically soft phases. The scaling functions above and below the MIT of a polycrystalline sample are found to be the same but with different exponents which are attributed to the distribution of the MIT temperatures. The applicability of the scaling in manganites underlines the universal response of the disordered systems to electric field.
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Submitted 19 March, 2013; v1 submitted 11 November, 2011;
originally announced November 2011.
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Nonlinearity exponents in lightly doped Conducting Polymers
Authors:
D. Talukdar,
U. N. Nandi,
K. K. Bardhan,
C. C. Bof Bufon,
T. Heinzel,
A. De,
C. D. Mukherjee
Abstract:
The \textit{I-V} characteristics of four conducting polymer systems like doped polypyrrole (PPy), poly 3,4 ethylene dioxythiophene (PEDOT), polydiacetylene (PDA) and polyaniline (PA) in as many physical forms have been investigated at different temperatures, quenched disorder and magnetic fields. Transport data clearly confirm the existence of a \textit{single} electric field scale in any system.…
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The \textit{I-V} characteristics of four conducting polymer systems like doped polypyrrole (PPy), poly 3,4 ethylene dioxythiophene (PEDOT), polydiacetylene (PDA) and polyaniline (PA) in as many physical forms have been investigated at different temperatures, quenched disorder and magnetic fields. Transport data clearly confirm the existence of a \textit{single} electric field scale in any system. Based upon this observation, a phenomenological scaling analysis is applied, leading to extraction of a concrete number $x_M$, called nonlinearity exponent. The latter serves to characterize a set of \textit{I-V} curves. The onset field $F_o$ at which conductivity starts deviating from its Ohmic value $σ_0$ scales as $F_o \sim σ_0^{x_M}$. Field-dependent data are shown to be described by Glatzman-Matveev multi-step tunneling model [JETP 67, 1276 (1988)] in a near-perfect manner over nine orders of magnitude in conductivity and five order of magnitudes in electric field. $x_M$ is found to possess both positive and negative values lying between -1/2 and 3/4. There is no theory at present for the exponent. Some issues concerning applicability of the Glatzman-Matveev model are discussed.
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Submitted 24 March, 2011; v1 submitted 25 February, 2011;
originally announced February 2011.
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Noise In Nonohmic Regimes Of Disordered Systems
Authors:
K. K. Bardhan,
C. D. Mukherjee,
U. N. Nandi
Abstract:
We present here a short review of mainly experimental properties of noise as disordered systems are driven into non-ohmic regimes by applying voltages of few volts only. It is found that the noise does not simply follow the resistance in that the direction of change of noise could be opposite to that of resistance. It is discussed how this and other properties make the noise a complementary and…
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We present here a short review of mainly experimental properties of noise as disordered systems are driven into non-ohmic regimes by applying voltages of few volts only. It is found that the noise does not simply follow the resistance in that the direction of change of noise could be opposite to that of resistance. It is discussed how this and other properties make the noise a complementary and incisive tool for studying complex systems, particularly its dynamic properties. Study of noise in non-ohmic regimes in physical systems is rather in a nascent stage. Some of the open issues are highlighted.
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Submitted 23 December, 2005;
originally announced December 2005.
