Electronic transport descriptors for the rapid screening of thermoelectric materials
Authors:
Tianqi Deng,
Jose Recatala-Gomez,
Masato Ohnishi,
D. V. Maheshwar Repaka,
Pawan Kumar,
Ady Suwardi,
Anas Abutaha,
Iris Nandhakumar,
Kanishka Biswas,
Michael B. Sullivan,
Gang Wu,
Junichiro Shiomi,
Shuo-Wang Yang,
Kedar Hippalgaonkar
Abstract:
The discovery of novel materials for thermoelectric energy conversion has potential to be accelerated by data-driven screening combined with high-throughput calculations. One way to increase the efficacy of successfully choosing a candidate material is through its evaluation using transport descriptors. Using a data-driven screening, we selected 12 potential candidates in the trigonal ABX2 family,…
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The discovery of novel materials for thermoelectric energy conversion has potential to be accelerated by data-driven screening combined with high-throughput calculations. One way to increase the efficacy of successfully choosing a candidate material is through its evaluation using transport descriptors. Using a data-driven screening, we selected 12 potential candidates in the trigonal ABX2 family, followed by charge transport property simulations from first principles. The results suggest that carrier scattering processes in these materials are dominated by ionised impurities and polar optical phonons, contrary to the oft-assumed acoustic-phonon-dominated scattering. Combined with calculations of thermal conductivity based on three-phonon scattering, we predict p-type AgBiS2 and TlBiTe2 as potential high-performance thermoelectrics in the intermediate temperature range for low grade waste heat harvesting, with a predicted zT above 1 at 500 K. Using these data, we further derive ground-state transport descriptors for the carrier mobility and the thermoelectric power factor. In addition to low carrier mass, high dielectric constant was found to be an important factor towards high carrier mobility. A quadratic correlation between dielectric constant and transport performance was established and further validated with literature. Looking ahead, dielectric constant can potentially be exploited as an independent tuning knob for improving the thermoelectric performance.
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Submitted 9 January, 2021;
originally announced January 2021.
Controllable modification of the anisotropy energy in Laves phase YFe2 by Ar+ ion implantation
Authors:
A. R. Buckingham,
G. J. Bowden,
D. Wang,
G. B. G. Stenning,
I. Nandhakumar,
R. C. C. Ward,
P. A. J. de Groot
Abstract:
Implanted 3.25 keV Ar+ ions have been used to modify the in-plane bulk anisotropy in thin films of epitaxially grown Laves phase YFe2. The magneto optical Kerr effect, vibrating sample magnetometry and computational modeling have been used to show that the dominant source of anisotropy changes from magnetoelastic in as-grown samples to magnetocrystalline in ion implanted samples. This change occur…
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Implanted 3.25 keV Ar+ ions have been used to modify the in-plane bulk anisotropy in thin films of epitaxially grown Laves phase YFe2. The magneto optical Kerr effect, vibrating sample magnetometry and computational modeling have been used to show that the dominant source of anisotropy changes from magnetoelastic in as-grown samples to magnetocrystalline in ion implanted samples. This change occurs at a critical fluence of order 1017 Ar+ ions cm-2. The change in source of the anisotropy is attributed to a relaxation of the strain inherent in the epitaxially grown thin-films. Atomic force microscopy shows that the samples' topography remains unchanged after ion implantation. The ability to control the dominant source of magnetic anisotropy without affecting the sample surface could have important consequences in the fabrication of patterned media for high use in density magnetic data storage devices.
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Submitted 8 September, 2010;
originally announced September 2010.
