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Influence of excitation frequency on Raman modes of In1-xGaxN thin films
Authors:
A. Dixit,
J. S. Thakur,
V. M. Naik,
R. Naik
Abstract:
Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity of various Raman modes. For those In1-xGaxN alloys whose bandgap energy is close to the red laser, a huge enhancement in the intensities of A1(LO) mode and its…
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Low energy optical modes of MBE-grown In1-xGaxN thin films with different values of x are investigated using Raman spectroscopy. We also studied the influence of Raman excitation frequency using red and green lasers on scattering intensity of various Raman modes. For those In1-xGaxN alloys whose bandgap energy is close to the red laser, a huge enhancement in the intensities of A1(LO) mode and its 2A1(LO) replica is observed when excited with red laser as compared to the green laser excitation. We found that the energies of longitudinal optical modes (A1 (LO) and 2A1 (LO)) vary nonlinearly unlike the E2 mode with increasing Ga atomic fraction. A Raman mode ~ 540 cm-1 was observed in all In1-xGaxN films with low energy red laser excitation but was absent with green laser excitation. We attribute this mode to A1(TO) mode of the underneath GaN buffer layer.
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Submitted 21 July, 2013;
originally announced July 2013.
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Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte
Authors:
Ming-Wei Lin,
Lezhang Liu,
Qing Lan,
Xuebin Tan,
Kulwinder Dhindsa,
Peng Zeng,
Vaman M. Naik,
Mark Ming-Cheng Cheng,
Zhixian Zhou
Abstract:
We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resist…
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We report electrical characterization of monolayer molybdenum disulfide (MoS2) devices using a thin layer of polymer electrolyte consisting of poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO4) as both a contact-barrier reducer and channel mobility booster. We find that bare MoS2 devices (without polymer electrolyte) fabricated on Si/SiO2 have low channel mobility and large contact resistance, both of which severely limit the field-effect mobility of the devices. A thin layer of PEO/ LiClO4 deposited on top of the devices not only substantially reduces the contact resistance but also boost the channel mobility, leading up to three-orders-of-magnitude enhancement of the field-effect mobility of the device. When the polymer electrolyte is used as a gate medium, the MoS2 field-effect transistors exhibit excellent device characteristics such as a near ideal subthreshold swing and an on/off ratio of 106 as a result of the strong gate-channel coupling.
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Submitted 19 July, 2012;
originally announced July 2012.
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Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films
Authors:
Raghava P. Panguluri,
P. Kharel,
C. Sudakar,
R. Naik,
R. Suryanarayanan,
V. M. Naik,
A. G. Petukhov,
B. Nadgorny,
G. Lawes
Abstract:
We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for bo…
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We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.
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Submitted 7 August, 2008;
originally announced August 2008.
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Ferromagnetism at 300 K in spin-coated anatasea and rutile Ti0.95Fe0.05O2 films
Authors:
R. Suryanarayanan,
V. M. Naik,
P. Kharel,
P. Talgala,
R. Naik
Abstract:
Thin films of Ti1-xFexO2 (x=0 and 0.05) have been prepared on sapphire substrates by spin-on technique starting from metal organic precursors. When heat treated in air at 550 and 700 degrees C respectively, these films present pure anatase and rutile structures as shown both by X-ray diffraction and Raman spectroscopy. Optical absorption indicate a high degree of transparency in the visible regi…
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Thin films of Ti1-xFexO2 (x=0 and 0.05) have been prepared on sapphire substrates by spin-on technique starting from metal organic precursors. When heat treated in air at 550 and 700 degrees C respectively, these films present pure anatase and rutile structures as shown both by X-ray diffraction and Raman spectroscopy. Optical absorption indicate a high degree of transparency in the visible region. Such films show a very small magnetic moment at 300 K. However, when the anatase and the rutile films are annealed in a vacuum of 1x10-5 Torr at 500 degrees C and 600 degrees C respectively, the magnetic moment, at 300 K, is strongly enhanced reaching 0.46 $μ$B/Fe for the anatase sample and 0.48 $μ$B/Fe for the rutile one. The ferromagnetic Curie temperature of these samples is above 350 K.
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Submitted 14 October, 2004;
originally announced October 2004.
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Structure and Rheology of the Defect-gel States of Pure and Particle-dispersed Lyotropic Lamellar Phases
Authors:
Geetha Basappa,
Suneel,
V. Kumaran,
Prabhu R. Nott,
Sriram Ramaswamy,
V. M. Naik,
Deeleep Rout
Abstract:
We present important new results from light-microscopy and rheometry on a moderately concentrated lyotropic smectic, with and without particulate additives. Shear-treatment aligns the phase rapidly, except for a striking network of oily-streak defects, which anneals out much more slowly. If spherical particles several microns in diameter are dispersed in the lamellar medium, part of the defect n…
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We present important new results from light-microscopy and rheometry on a moderately concentrated lyotropic smectic, with and without particulate additives. Shear-treatment aligns the phase rapidly, except for a striking network of oily-streak defects, which anneals out much more slowly. If spherical particles several microns in diameter are dispersed in the lamellar medium, part of the defect network persists under shear-treatment, its nodes anchored on the particles. The sample as prepared has substantial storage and loss moduli, both of which decrease steadily under shear-treatment. Adding particles enhances the moduli and retards their decay under shear. The data for the frequency-dependent storage modulus after various durations of shear-treatment can be scaled to collapse onto a single curve. The elasticity and dissipation in these samples thus arises mainly from the defect network, not directly from the smectic elasticity and hydrodynamics.
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Submitted 14 July, 1999; v1 submitted 30 April, 1999;
originally announced April 1999.
