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Tailoring Robust Quantum Anomalous Hall Effect via Entropy-Engineering
Authors:
Syeda Amina Shabbir,
Frank Fei Yun,
Muhammad Nadeem,
Xiaolin Wang
Abstract:
The development of quantum materials and the tailoring of their functional properties is of fundamental interest in materials science. Here, a new design concept is proposed for the robust quantum anomalous Hall effect via entropy engineering in 2D magnets. As a prototypical example, the configurational entropy of monolayer transition metal trihalide VCl$_3$ is manipulated by incorporating four di…
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The development of quantum materials and the tailoring of their functional properties is of fundamental interest in materials science. Here, a new design concept is proposed for the robust quantum anomalous Hall effect via entropy engineering in 2D magnets. As a prototypical example, the configurational entropy of monolayer transition metal trihalide VCl$_3$ is manipulated by incorporating four different transition-metal cations [Ti,Cr,Fe,Co] into the honeycomb structure made of vanadium, such that all in-plane mirror symmetries, inversion and/or roto-inversion are broken. Monolayer VCl$_3$ is a ferromagnetic Dirac half-metal in which spin-polarized Dirac dispersion at valley momenta is accompanied by bulk states at the $Γ$-point and thus the spin-orbit interaction-driven quantum anomalous Hall phase does not exhibit fully gapped bulk band dispersion. Entropy-driven bandstructure renormalization, especially band flattening in combination with red- and blue-shifts at different momenta of the Brillouin zone and crystal-field effects, transforms Dirac half-metal to a Dirac spin-gapless semiconductor and leads to a robust quantum anomalous Hall phase with fully gapped bulk band dispersion and, thus, a purely topological edge state transport without mixing with dissipative bulk channels. These findings provide a paradigm for designing entropy-engineered 2D materials for the realization of robust quantum anomalous Hall effect and quantum device applications.
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Submitted 3 June, 2025; v1 submitted 27 December, 2024;
originally announced December 2024.
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2024 roadmap on 2D topological insulators
Authors:
Bent Weber,
Michael S Fuhrer,
Xian-Lei Sheng,
Shengyuan A Yang,
Ronny Thomale,
Saquib Shamim,
Laurens W Molenkamp,
David Cobden,
Dmytro Pesin,
Harold J W Zandvliet,
Pantelis Bampoulis,
Ralph Claessen,
Fabian R Menges,
Johannes Gooth,
Claudia Felser,
Chandra Shekhar,
Anton Tadich,
Mengting Zhao,
Mark T Edmonds,
Junxiang Jia,
Maciej Bieniek,
Jukka I Väyrynen,
Dimitrie Culcer,
Bhaskaran Muralidharan,
Muhammad Nadeem
Abstract:
2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc…
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2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.
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Submitted 20 June, 2024;
originally announced June 2024.
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Possible Excitonic Insulating Phase in Quantum-Confined Sb Nanoflakes
Authors:
Zhi Li,
Muhammad Nadeem,
Zengji Yue,
David Cortie,
Michael Fuhrer,
Xiaolin Wang
Abstract:
In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show th…
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In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show that the enhanced Coulomb interaction in quantum-confined elemental Sb nanoflakes drives the system to the excitonic insulator state. The unique feature of the excitonic insulator, a charge density wave (CDW) without periodic lattice distortion, is directly observed. Furthermore, STS shows a gap induced by the CDW near the Fermi surface. Our observations suggest that the Sb(110) nanoflake is an excitonic insulator.
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Submitted 29 May, 2024;
originally announced May 2024.
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Spin-Orbital Coupling in All-Inorganic Metal-Halide Perovskites: the Hidden Force that Matters
Authors:
Pradeep Raja Anandan,
Muhammad Nadeem,
Chun-Ho Lin,
Simrjit Singh,
Xinwei Guan,
Jiyun Kim,
Shamim Shahroki,
Md Zahidur Rahaman,
Xun Geng,
Jing-Kai Huang,
Hien Nguyen,
Hanlin Hu,
Pankaj Sharma,
Jan Seidel,
Xiaolin Wang,
Tom Wu
Abstract:
Highlighted with improved long-term thermal and environmental stability, all-inorganic metal halide perovskites exhibit tunable physical properties, cost-effective synthesis, and satisfactory optoelectronic performance, attracting increasing research interests worldwide. However, a less explored feature of these materials is their strong spin-orbit coupling (SOC), which is the hidden force influen…
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Highlighted with improved long-term thermal and environmental stability, all-inorganic metal halide perovskites exhibit tunable physical properties, cost-effective synthesis, and satisfactory optoelectronic performance, attracting increasing research interests worldwide. However, a less explored feature of these materials is their strong spin-orbit coupling (SOC), which is the hidden force influencing not only band structure but also properties including magnetoresistance, spin lifetime and singlet-triplet splitting. This review provides an overview of the fundamental aspects and the latest progress of the SOC and debate regarding Rashba effects in all-inorganic metal halide perovskites, providing critical insights into the physical phenomena and potential applications. Meanwhile, crystal structures and photophysics of all-inorganic perovskite are discussed in the context of SOC, along with the related experimental and characterization techniques. Furthermore, a recent understanding of the band topology in the all-inorganic halide perovskites is introduced to push the boundary even further for the novel applications of all-inorganic halide perovskites. Finally, an outlook is given on the potential directions of breakthroughs via leveraging the SOC in halide perovskites.
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Submitted 28 November, 2023;
originally announced November 2023.
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Superconducting Diode Effect -- Fundamental Concepts, Material Aspects, and Device Prospects
Authors:
Muhammad Nadeem,
Michael S. Fuhrer,
Xiaolin Wang
Abstract:
Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting…
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Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting diode effect including fundamental concepts, material aspects, device prospects, and theoretical/experimental development is reviewed. First, fundamental mechanisms to cause superconducting diode effect including simultaneous space-inversion and time-reversal symmetry breaking, magnetochiral anisotropy, interplay between spin-orbit interaction energy and the characteristic energy scale of supercurrent carriers, and finite-momentum Cooper pairing are discussed. Second, the progress of superconducting diode effect from theoretical predictions to experimental observations are reviewed. Third, interplay between various system parameters leading to superconducting diode effect with optimal performance is presented. Then, it is explicitly highlighted that nonreciprocity of supercurrent can be characterized either by current-voltage relation obtained from resistive direct-current measurements in the metal-superconductor fluctuation region ($T\approx T_c$) or by current-phase relation and nonreciprocity of superfluid inductance obtained from alternating-current measurements in the superconducting phase ($T<T_c$). Finally, insight into future directions in this active research field is provided with a perspective analysis on intertwining between band-topology and helical superconductivity, which could be useful to steer the engineering of emergent topological superconducting technologies.
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Submitted 31 January, 2023;
originally announced January 2023.
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Topological Dirac Spin-Gapless Materials -- New Horizon for Topological Spintronics Without Spin-Orbit Interaction
Authors:
Muhammad Nadeem,
Xiaolin Wang
Abstract:
The existence of chiral edge states, corresponding to the nontrivial bulk-band topology characterized by a non-vanishing topological invariant, and the manipulation of topological transport via chiral edge states promise topological electronic/spintronic device applications. Here we predict the existence, practical realization, topological protection, and topological switching of spin-gapless vall…
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The existence of chiral edge states, corresponding to the nontrivial bulk-band topology characterized by a non-vanishing topological invariant, and the manipulation of topological transport via chiral edge states promise topological electronic/spintronic device applications. Here we predict the existence, practical realization, topological protection, and topological switching of spin-gapless valley-filtered chiral edge states, representing a novel topological Dirac spin-gapless/half-metal phase in antiferromagnetic honeycomb structures terminated on zigzag edges. We demonstrate that this phenomenon is realizable if a perpendicular (transverse) electric field is applied in zigzag nanoribbons with an antiferromagnetic ordering on the boundary (in the bulk), and the Weber-Fechner type nonlinear behavior is optimizable by a transverse (perpendicular) electric field. The existence of spin-gapless valley-filtered chiral edge states, their correspondence with nontrivial topological character in the bulk, and electric-field-driven switching of their spin-polarization that is accompanied by switching of bulk-band topology promise a new strategy for topological spintronics without spin-orbit interaction.
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Submitted 13 September, 2022; v1 submitted 26 May, 2022;
originally announced May 2022.
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Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
Authors:
Michael S. Fuhrer,
Mark T. Edmonds,
Dimitrie Culcer,
Muhammad Nadeem,
Xiaolin Wang,
Nikhil Medhekar,
Yuefeng Yin,
Jared H Cole
Abstract:
A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we p…
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A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed.
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Submitted 13 January, 2022;
originally announced January 2022.
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Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects
Authors:
Muhammad Nadeem,
Chao Zhang,
Dimitrie Culcer,
Alex R. Hamilton,
Michael S. Fuhrer,
Xiaolin Wang
Abstract:
In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics asso…
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In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.
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Submitted 6 March, 2022; v1 submitted 26 July, 2021;
originally announced July 2021.
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Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review
Authors:
Muhammad Nadeem,
Alex R. Hamilton,
Michael S. Fuhrer,
Xiaolin Wang
Abstract:
Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief…
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Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials.
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Submitted 22 December, 2020;
originally announced January 2021.
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Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect
Authors:
Muhammad Nadeem,
Iolanda Di Bernardo,
Xiaolin Wang,
Michael S. Fuhrer,
Dimitrie Culcer
Abstract:
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-th…
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The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.
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Submitted 1 December, 2020;
originally announced December 2020.
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Spin-1 Dirac half-metal, spin-gapless semiconductor, and spin-polarized massive Dirac dispersion in transition metal dihalide monolayers
Authors:
Muhammad Nadeem,
Xiaolin Wang
Abstract:
Spin-1 condensed matter systems characterized by the combination of a Dirac-like dispersion and flat bands are ideal for realizing high-temperature electronics and spintronic technologies in the absence of external magnetic field. In this study, we propose a three-band tight binding model, with spin-polarized Haldane-like next-nearest-neighbour tunnelling, on dice lattice and show that spin-1 Dira…
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Spin-1 condensed matter systems characterized by the combination of a Dirac-like dispersion and flat bands are ideal for realizing high-temperature electronics and spintronic technologies in the absence of external magnetic field. In this study, we propose a three-band tight binding model, with spin-polarized Haldane-like next-nearest-neighbour tunnelling, on dice lattice and show that spin-1 Dirac half-metal, spin-1 Dirac spin-gapless semiconductor, and spin-polarized spin-1 massive Dirac dispersion with nontrivial topology can exist in two-dimensional ferromagnetic condensed matter systems with electron spin polarization P = 1. The proposed spin-polarized spin-1 phases can be realized in ferromagnetic transition metal dihalides MX2 monolayers effectively. By using first principle calculations, we show that a small compressive strain leads MX2 monolayers to be spin-one Dirac half-metal for M = Fe and X = Br, Cl while spin-one Dirac spin-gapless semiconductor for M = Co and X = Br, Cl. Spin-one Dirac spin-gapless semiconductors CoBr2 and CoCl2 embeds flat band ferromagnetism where spin-orbit coupling opens a topologically non-trivial Dirac gap between dispersing valance and conduction band while leaving flat band unaffected. The intrinsic flat-band ferromagnetism in spin-polarized spin-1 massive Dirac dispersion plays key role in materializing quantum anomalous Hall state with Chern number C = -2.
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Submitted 7 July, 2019;
originally announced July 2019.
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Long Range Intrinsic Ferromagnetism in Two Dimensional Materials and Dissipationless Future Technologies
Authors:
Babar Shabbir,
Muhammad Nadeem,
Zhigao Dai,
Michael Fuhrer,
Qi-Kun Xue,
Xiaolin Wang,
Qiaoliang Bao
Abstract:
The inherent susceptibility of low-dimensional materials to thermal fluctuations has long been expected to poses a major challenge to achieving intrinsic long-range ferromagnetic order in two-dimensional materials. The recent explosion of interest in atomically thin materials and their assembly into van der Waals heterostructures has renewed interest in two-dimensional ferromagnetism, which is int…
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The inherent susceptibility of low-dimensional materials to thermal fluctuations has long been expected to poses a major challenge to achieving intrinsic long-range ferromagnetic order in two-dimensional materials. The recent explosion of interest in atomically thin materials and their assembly into van der Waals heterostructures has renewed interest in two-dimensional ferromagnetism, which is interesting from a fundamental scientific point of view and also offers a missing ingredient necessary for the realization of spintronic functionality in van der Waals heterostructures. Recently several atomically thin materials have been shown to be robust ferromagnets. Such ferromagnetism is thought to be enabled by magneto crystalline anisotropy which suppresses thermal fluctuations. In this article, we review recent progress in two-dimensional ferromagnetism in detail and predict new possible two-dimensional ferromagnetic materials. We also discuss the prospects for applications of atomically thin ferromagnets in novel dissipationless electronics, spintronics, and other conventional magnetic technologies. Particularly atomically thin ferromagnets are promising to realize time reversal symmetry breaking in two-dimensional topological systems, providing a platform for electronic devices based on the quantum anomalous Hall Effect showing dissipationless transport. Our proposed directions will assist the scientific community to explore novel two-dimensional ferromagnetic families which can spawn new technologies and further improve the fundamental understanding of this fascinating area.
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Submitted 21 October, 2018;
originally announced October 2018.
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Synthesis of Fe2O3 nanoparticles by new Sol-Gel method and their structural and magnetic characterizations
Authors:
Shakeel Akbar,
S. K. Hasanain,
Nasia Azmat,
M. Nadeem
Abstract:
Fe2O3 nanoparticles of different sizes ranging from 22 to 56nm were synthesized chemically by a modified sol-gel method. Pure alpha phase particles as well as particles with admixture of alpha and gamma phase were obtained and identified by x-ray and Mössbauer measurements. Different size and phase controlling parameters have been identified. The average size of the particles decreases with incr…
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Fe2O3 nanoparticles of different sizes ranging from 22 to 56nm were synthesized chemically by a modified sol-gel method. Pure alpha phase particles as well as particles with admixture of alpha and gamma phase were obtained and identified by x-ray and Mössbauer measurements. Different size and phase controlling parameters have been identified. The average size of the particles decreases with increased annealing temperature of the gel and decreases with the increase in the concentrations of the (citric acid). The annealing temperature affects the relative fractions of the two phases and consequently the magnetization of the particles. The magnetization of the particles (Ms) and coercivity (Hc) increase consistently with the increase in the annealing temperature. For the same relative amount of the two phases, the coercivity (Hc) and the moment of the particles increase with the decrease in the size of the particles, indicating the role of surface effects in the magnetic behaviour.
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Submitted 23 August, 2004;
originally announced August 2004.
