Showing 1–35 of 35 results for author: Myers-Ward, R L

Electrical Detection of Magnetization Switching in Single-Molecule Magnets

Authors: Amjad Alqahtani, DaVonne Henry, Lubomír Havlíček, Luke St. Marie, Jakub Hrubý, Antonín Sojka, Morgan Hale, Samuel Felsenfeld, Abdelouahad El Fatimy, Rachael L. Myers-Ward, D. Kurt Gaskill, Ivan Nemec, Petr Neugebauer, Amy Y. Liu, Paola Barbara

Abstract: Single-molecule magnets (SMMs) with chemically tailorable properties are potential building blocks for quantum computing, high-density magnetic memory, and spintronics.1 2 3,4 These applications require isolated or few molecules on substrates, but studies of SMMs have mainly focused on bulk crystals. Moreover, fabrication of SMM-based devices and electrical detection of the SMM magnetic state are… ▽ More Single-molecule magnets (SMMs) with chemically tailorable properties are potential building blocks for quantum computing, high-density magnetic memory, and spintronics.1 2 3,4 These applications require isolated or few molecules on substrates, but studies of SMMs have mainly focused on bulk crystals. Moreover, fabrication of SMM-based devices and electrical detection of the SMM magnetic state are still coveted milestones that have so far been achieved mainly for double-decker rare-earth phthalocyanines at temperatures below 1 K.5-8 Here we demonstrate electrical detection of magnetization switching for a modification of the archetypal SMM Mn12, up to 70 K, based on the supramolecular spin valve effect5 with graphene quantum dots9. Notably, the exchange interaction between the molecules and the graphene, as well as the dot-mediated intermolecular interaction, can be directly extracted from the electrical response, opening the way to an effective characterization of the quantum properties of different types of SMMs in a wide temperature range. △ Less

Submitted 30 July, 2024; originally announced July 2024.

Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin… ▽ More We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Comments: 14 pages, 3 figures

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)

Authors: Jimmy C. Kotsakidis, Marc Currie, Antonija Grubišić-Čabo, Anton Tadich, Rachael L. Myers-Ward, Matthew DeJarld, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Amadeo L. Vázquez de Parga, Michael S. Fuhrer, D. Kurt Gaskill

Abstract: Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by las… ▽ More Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by laser patterning (ablating) the graphene to form micron-sized discontinuities. We then use low energy electron diffraction to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, we find that the intercalation rate increase for the patterned sample is 4.5$\pm$1.7. Since the edge length of the patterned sample is $\approx$5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. Our laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 24 pages, 4 figures

Journal ref: Advanced Materials Interfaces 8.23 (2021): 2101598

Strong transient magnetic fields induced by THz-driven plasmons in graphene disks

Authors: Jeong Woo Han, Pavlo Sai, Dmytro But, Ece Uykur, Stephan Winnerl, Gagan Kumar, Matthew L. Chin, Rachael L. Myers-Ward, Matthew T. Dejarld, Kevin M. Daniels, Thomas E. Murphy, Wojciech Knap, Martin Mittendorff

Abstract: Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carri… ▽ More Strong circularly polarized excitation opens up the possibility to generate and control effective magnetic fields in solid state systems, e.g., via the optical inverse Faraday effect or the phonon inverse Faraday effect. While these effects rely on material properties that can be tailored only to a limited degree, plasmonic resonances can be fully controlled by choosing proper dimensions and carrier concentrations. Plasmon resonances provide new degrees of freedom that can be used to tune or enhance the light-induced magnetic field in engineered metamaterials. Here we employ graphene disks to demonstrate light-induced transient magnetic fields from a plasmonic circular current with extremely high efficiency. The effective magnetic field at the plasmon resonance frequency of the graphene disks (3.5 THz) is evidenced by a strong (~1°) ultrafast Faraday rotation (~ 20 ps). In accordance with reference measurements and simulations, we estimated the strength of the induced magnetic field to be on the order of 0.7 T under a moderate pump fluence of about 440 nJ cm-2. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Journal ref: Nature Communications 14, 7493 (2023)

Ultrafast Hot-Carrier cooling in Quasi Freestanding Bilayer Graphene with Hydrogen Intercalated Atoms

Authors: Sachin Sharma, Rachael L. Myers-Ward, David Kurt Gaskill, Ioannis Chatzakis

Abstract: We perform a femtosecond-THz optical pump-probe spectroscopy to investigate the cooling dynamics of hot carriers in quasi-free standing bilayer epitaxial graphene. We observed longer decay time constants, in the range of 2.6 to 6.4 ps, compared to previous studies on monolayer graphene, which increase nonlinearly with excitation intensity. The increased relaxation times are due to the decoupling o… ▽ More We perform a femtosecond-THz optical pump-probe spectroscopy to investigate the cooling dynamics of hot carriers in quasi-free standing bilayer epitaxial graphene. We observed longer decay time constants, in the range of 2.6 to 6.4 ps, compared to previous studies on monolayer graphene, which increase nonlinearly with excitation intensity. The increased relaxation times are due to the decoupling of the graphene layer from the SiC substrate after hydrogen intercalation which increases the distance between graphene and substrate. Furthermore, our measurements do not show that the supercollision mechanism is related to the cooling process of the hot carriers, which is ultimately achieved by electron-optical phonon scattering. △ Less

Submitted 2 February, 2023; originally announced February 2023.

Comments: 19 pages in lauding the supplemental material. Tree figures and one more in the supplemental material. Nanoscale Advances 2023

ACM Class: J.2

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Authors: Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew Dejarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer

Abstract: The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy… ▽ More The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable. △ Less

Submitted 13 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 58 pages, 10 figures, 4 tables. Revised text and figures

Effect of defect-induced cooling on graphene hot-electron bolometers

Authors: Abdel El Fatimy, Peize Han, Nicholas Quirk, Luke St. Marie, Matthew T. Dejarld, Rachael L. Myers-Ward, Kevin Daniels, Shojan Pavunny, D. Kurt Gaskill, Yigit Aytac, Thomas E. Murphy, Paola Barbara

Abstract: At high phonon temperature, defect-mediated electron-phonon collisions (supercollisions) in graphene allow for larger energy transfer and faster cooling of hot electrons than the normal, momentum-conserving electron-phonon collisions. Disorder also affects the heat flow between electrons and phonons at very low phonon temperature, where the phonon wavelength exceeds the mean free path. In both cas… ▽ More At high phonon temperature, defect-mediated electron-phonon collisions (supercollisions) in graphene allow for larger energy transfer and faster cooling of hot electrons than the normal, momentum-conserving electron-phonon collisions. Disorder also affects the heat flow between electrons and phonons at very low phonon temperature, where the phonon wavelength exceeds the mean free path. In both cases, the cooling rate is predicted to exhibit a characteristic cubic power law dependence on the electron temperature, markedly different from the T^4 dependence predicted for pristine graphene. The impact of defect-induced cooling on the performance of optoelectronic devices is still largely unexplored. Here we study the cooling mechanism of hot-electron bolometers based on epitaxial graphene quantum dots where the defect density can be controlled with the fabrication process. The devices with high defect density exhibit the cubic power law. Defect-induced cooling yields a slower increase of the thermal conductance with increasing temperature, thereby greatly enhancing the device responsivity compared to devices with lower defect density and operating with normal-collision cooling. △ Less

Submitted 8 May, 2019; originally announced May 2019.

Nanoscale patterning of quasiparticle band alignment

Authors: Søren Ulstrup, Cristina E. Giusca, Jill A. Miwa, Charlotte E. Sanders, Alex Browning, Pavel Dudin, Cephise Cacho, Olga Kazakova, D. Kurt Gaskill, Rachael L. Myers-Ward, Tianyi Zhang, Mauricio Terrones, Philip Hofmann

Abstract: Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale elec… ▽ More Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale electronic patterning in a single sheet can be achieved by placing the 2D material on a suitably pre-patterned substrate, exploiting the sensitivity of 2D materials to their environment via band alignment, screening or hybridization. Here, we utilize the inherently nano-structured single layer (SL) and bilayer (BL) graphene on silicon carbide to laterally tune the electrostatic gating of adjacent SL tungsten disulphide (WS$_2$) in a van der Waals heterostructure. The electronic band alignments are mapped in energy and momentum space using angle-resolved photoemission with a spatial resolution on the order of 500~nm (nanoARPES). We find that the SL WS$_2$ band offsets track the work function of the underlying SL and BL graphene, and we relate such changes to observed lateral patterns of exciton and trion luminescence from SL WS$_2$, demonstrating ultimate control of optoelectronic properties at the nanoscale. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Comments: 13 pages, 3 figures

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Authors: A. Mukherjee, C. T. Ellis, M. M. Arik, P. Taheri, E. Oliverio, P. Fowler, J. G. Tischler, Y. Liu, E. R. Glaser, R. L. Myers-Ward, J. L. Tedesco, C. R. Eddy Jr, D. Kurt Gaskill, H. Zeng, G. Wang, J. Cerne

Abstract: We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk Si… ▽ More We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk SiC. Our experiments and modelling indicate that the enhancement occurs at the high-energy edge of the SiC reststrahlen band where the real component of the complex refractive index n passes through unity. Furthermore, since the signal is greatly enhanced when n=1, the enhancement is predicted to exist over the entire visible/infrared (IR) spectrum for a free-standing film. We also predict similar giant enhancement in both Faraday (transmission) and Kerr rotation for thin films on a metamaterial substrate with refractive index n=-1. This work demonstrates that the substrate used in MOKE measurements must be carefully chosen when investigating magneto-optical materials with weak MOKE signals or when designing MOKE-based optoelectronic devices. △ Less

Submitted 19 January, 2019; originally announced January 2019.

Comments: 15 pages, 4 figures

Thickness dependent hydrophobicity of epitaxial graphene

Authors: M. Munz, C. E. Giusca, R. L. Myers-Ward, D. K. Gaskill, O. Kazakova

Abstract: This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical… ▽ More This article addresses the much debated question whether the degree of hydrophobicity of single-layer graphene (1LG) is different from the one of double-layer graphene (2LG). Knowledge of the water affinity of graphene and its spatial variations is critically important as it can affect the graphene properties as well as the performance of graphene devices exposed to humidity. By employing chemical force microscopy (CFM) with a probe rendered hydrophobic by functionalization with octadecyltrichlorosilane (OTS), the adhesion force between the probe and epitaxial graphene on SiC has been measured in deionized water. Owing to the hydrophobic attraction, a larger adhesion force was measured on 2LG domains of graphene surfaces, thus showing that 2LG is more hydrophobic than 1LG. Identification of 1LG and 2LG domains was achieved through Kelvin probe force microscopy and Raman spectral mapping. Approximate values of the adhesion force per OTS molecule have been calculated through contact area analysis. Furthermore, the contrast of friction force images measured in contact mode was reversed to the 1LG/2LG adhesion contrast and its origin was discussed in terms of the likely water depletion over hydrophobic domains as well as deformation in the contact area between AFM tip and 1LG. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in ACS Nano ©American Chemical Society after peer review. To access the final edited and published work see URL: https://pubs.acs.org/doi/abs/10.1021/acsnano.5b03220

Journal ref: ACS Nano, 2015, 9, 8, 8401

Water affinity to epitaxial graphene: the impact of layer thickness

Authors: Cristina E. Giusca, Vishal Panchal, Martin Munz, Virginia D. Wheeler, Luke O. Nyakiti, Rachael L. Myers-Ward, D. Kurt Gaskill, Olga Kazakova

Abstract: The sensitivity to water of epitaxial graphene is examined in this study. The sensitivity to water of epitaxial graphene is examined in this study. △ Less

Submitted 26 April, 2018; originally announced April 2018.

Journal ref: Advanced Materials Interfaces, 2, 16, 2015, 1500252

Atmospheric doping effects in epitaxial graphene: correlation of local and global electrical measurements

Authors: Vishal Panchal, Cristina E. Giusca, Arseniy Lartsev, Nicholas A. Martin, Nathan Cassidy, Rachael L. Myers-Ward, D. Kurt Gaskill, Olga Kazakova

Abstract: We directly correlate the local (20-nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC(0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions, where the starting state of the surface… ▽ More We directly correlate the local (20-nm scale) and global electronic properties of a device containing mono-, bi- and tri-layer epitaxial graphene (EG) domains on 6H-SiC(0001) by simultaneously performing local surface potential measurements using Kelvin probe force microscopy and global transport measurements. Using well-controlled environmental conditions, where the starting state of the surface can be reproducibly defined, we investigate the doping effects of N2, O2, water vapour and NO2 at concentrations representative of the ambient air. We show that presence of O2, water vapour and NO2 leads to p-doping of all EG domains. However, the thicker layers of EG are significantly less affected by the atmospheric dopants. Furthermore, we demonstrate that the general consensus of O2 and water vapour present in ambient air providing majority of the p-doping to graphene is a common misconception. We experimentally show that even the combined effect of O2, water vapour, and NO2 at concentrations higher than typically present in the atmosphere does not fully replicate the state of the EG surface in ambient air. All doping effects can be reproducibly reversed by vacuum annealing. Thus, for EG gas sensors it is essential to consider naturally occurring environmental effects and properly separate them from those coming from targeted species. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: 4 Figures, 1 Table

Journal ref: 2D Materials, 3 (2016) 015006

Ultra-broadband photodetectors based on epitaxial graphene quantum dots

Authors: Abdel El Fatimy, Anindya Nath, Byoung Don Kong, Anthony K. Boyd, Rachael L. Myers-Ward, Kevin Daniels, M. Mehdi Jadidi, Thomas E. Murphy, D. Kurt Gaskill, Paola Barbara

Abstract: Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions yields detectors with extraordinarily high intrinsic responsivity, higher than 1x10^9 V/W at 3K. The sensing mechanism is bolometric in nature: the quantum confinement gap causes a strong dependence of the electrical resi… ▽ More Graphene is an ideal material for hot-electron bolometers, due to its low heat capacity and weak electron-phonon coupling. Nanostructuring graphene with quantum dot constrictions yields detectors with extraordinarily high intrinsic responsivity, higher than 1x10^9 V/W at 3K. The sensing mechanism is bolometric in nature: the quantum confinement gap causes a strong dependence of the electrical resistance on the electron temperature. Here we show that this quantum confinement gap does not impose a limitation on the photon energy for light detection and these quantum dot bolometers work in a very broad spectral range, from terahertz, through telecom to ultraviolet radiation, with responsivity independent of wavelength. We also measure the power dependence of the response. Although the responsivity decreases with increasing power, it stays higher than 1x10^8 V/W in a wide range of absorbed power, from 1 pW to 0.4 nW. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Journal ref: Nanophotonics 20170100 (2018)

Correlated Disorder in van der Waals Heterostructures

Authors: Nouamane Laanait, Zhan Zhang, Christian M. Schleputz, Ying Liu, Michael Wojcik, Rachael L. Myers-Ward, D. Kurt Gaskill, Paul Fenter, Lian Li

Abstract: The individual building blocks of van der Waals (vdW) heterostructures host fascinating physical phenomena, ranging from ballistic electron transport in graphene to striking optical properties of MoSe2 sheets. The presence of bonded and non-bonded cohesive interactions in a vdW heterostructure, promotes diversity in their structural arrangements, which in turn profoundly modulate the properties of… ▽ More The individual building blocks of van der Waals (vdW) heterostructures host fascinating physical phenomena, ranging from ballistic electron transport in graphene to striking optical properties of MoSe2 sheets. The presence of bonded and non-bonded cohesive interactions in a vdW heterostructure, promotes diversity in their structural arrangements, which in turn profoundly modulate the properties of their individual constituents. Here, we report on the presence of correlated structural disorder coexisting with the nearly perfect crystallographic order along the growth direction of epitaxial vdW heterostructures of Bi2Se3/graphene/SiC. Using the depth penetration of X-ray diffraction microscopy and scattering, we probed their crystal structure from atomic to mesoscopic length scales, to reveal that their structural diversity is underpinned by spatially correlated disorder states. The presence of the latter induces on a system, widely considered to behave as a collection of nearly independent 2-dimensional units, a pseudo-3-dimensional character, when subjected to epitaxial constraints and ordered substrate interactions. These findings shed new light on the nature of the vast structural landscape of vdW heterostructures and could enable new avenues in modulating their unique properties by correlated disorder. △ Less

Submitted 12 June, 2016; originally announced June 2016.

Comments: 17 pages, 4 figures

Epitaxial graphene quantum dots for high-performance THz bolometers

Authors: A. El Fatimy, R. L. Myers-Ward, A. K. Boyd, K. M. Daniels, D. K. Gaskill, P. Barbara

Abstract: Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive as a hot-electron bolometer material. Unfortunately, the weak variation of electrical resistance with temperature has substantially limited the responsivity of graphene bolometers. Here we show that quantum dots of epitax… ▽ More Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive as a hot-electron bolometer material. Unfortunately, the weak variation of electrical resistance with temperature has substantially limited the responsivity of graphene bolometers. Here we show that quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature due to quantum confinement, higher than 430 Mohm/K at 2.5 K, leading to responsivities for absorbed THz power above 10^10 V/W. This is five orders of magnitude higher than other types of graphene hot electron bolometers. The high responsivity combined with an extremely low noise-equivalent power, about 0.2 fW/Hz^0.5 at 2.5K, place the performance of graphene quantum dot bolometers well above commercial cooled bolometers. Additionally, these quantum dot bolometers have the potential for superior performance for operation above 77K. △ Less

Submitted 15 September, 2015; originally announced September 2015.

Journal ref: Nature Nanotechnology (2016)

Hybrid Metal-Graphene Plasmons for Tunable Terahertz Technology

Authors: Mohammad M. Jadidi, Andrei B. Sushkov, Rachael L. Myers-Ward, Anthony K. Boyd, Kevin M. Daniels, D. Kurt Gaskill, Michael S. Fuhrer, H. Dennis Drew, Thomas E. Murphy

Abstract: Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves are confined to finite-sized graphene, plasmon resonances emerge that are characterized by alternating charge accumulation at the opposing edges of the graphene.… ▽ More Among its many outstanding properties, graphene supports terahertz surface plasma waves -- sub-wavelength charge density oscillations connected with electromagnetic fields that are tightly localized near the surface[1,2]. When these waves are confined to finite-sized graphene, plasmon resonances emerge that are characterized by alternating charge accumulation at the opposing edges of the graphene. The resonant frequency of such a structure depends on both the size and the surface charge density, and can be electrically tuned throughout the terahertz range by applying a gate voltage[3,4]. The promise of tunable graphene THz plasmonics has yet to be fulfilled, however, because most proposed optoelectronic devices including detectors, filters, and modulators[5-10] desire near total modulation of the absorption or transmission, and require electrical contacts to the graphene -- constraints that are difficult to meet using existing plasmonic structures. We report here a new class of plasmon resonance that occurs in a hybrid graphene-metal structure. The sub-wavelength metal contacts form a capacitive grid for accumulating charge, while the narrow interleaved graphene channels, to first order, serves as a tunable inductive medium, thereby forming a structure that is resonantly-matched to an incident terahertz wave. We experimentally demonstrate resonant absorption near the theoretical maximum in readily-available, large-area graphene, ideal for THz detectors and tunable absorbers. We further predict that the use of high mobility graphene will allow resonant THz transmission near 100%, realizing a tunable THz filter or modulator. The structure is strongly coupled to incident THz radiation, and solves a fundamental problem of how to incorporate a tunable plasmonic channel into a device with electrical contacts. △ Less

Submitted 10 July, 2015; v1 submitted 18 June, 2015; originally announced June 2015.

Journal ref: Nano Lett., 2015, 15 (10), pp 7099-7104

Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy

Authors: P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy, Jr., D. K. Gaskill

Abstract: Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed… ▽ More Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morphology of which was systematically altered using a relatively new technique called electrostatic-manipulation scanning tunneling microscopy. Transformed graphene formations sometimes spontaneously returned to their original morphology, while others permanently changed. Using an electrostatic model, we calculate that a force up to ~5 nN was exerted by the STM tip, and an energy of around 10 eV was required to alter the geometry of a ~100 X 200 nm^2 area. △ Less

Submitted 27 January, 2015; originally announced January 2015.

Comments: 12 pages, 2 figures

Journal ref: Japanese Journal of Applied Physics 52, 035104 (2013)

Atomic-Scale Movement Induced in Nano-Ridges by Scanning Tunneling Microscopy on Epitaxial Graphene Grown on 4H-SiC(0001)

Authors: P. Xu, S. D. Barber, J. K. Schoelz, M. L. Ackerman, D. Qi, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill

Abstract: Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward… ▽ More Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller than previously reported ridges. Atomic-resolution STM was performed near and on top of the nano-ridges using a dual scanning technique in which forward and reverse images are simultaneously recorded. An apparent 100% enlarged graphene lattice constant is observed along the leading edge of the image for both directions. Horizontal movement of the graphene, due to both an electrostatic attraction to the STM tip and weak bonding to the substrate, is thought to contribute to the results. △ Less

Submitted 23 January, 2015; originally announced January 2015.

Comments: 20 pages, 4 figures

Journal ref: Journal of Vacuum Science and Technology B 31, 04D101 (2013)

Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface

Authors: P. Xu, M. L. Ackerman, S. D. Barber, J. K. Schoelz, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill

Abstract: Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furth… ▽ More Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample. △ Less

Submitted 20 January, 2015; originally announced January 2015.

Comments: 20 pages, 5 figures

Journal ref: Surface Science 617, 113 (2013)

Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC

Authors: P. Xu, D. Qi, J. K. Schoelz, J. Thompson, P. M. Thibado, V. D. Wheeler, L. O. Nyakiti, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, M. Neek-Amal, F. M. Peeters

Abstract: Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals infor… ▽ More Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moiré patterns of different spatial periodicities are found, and we found that as the wavelength increases, so does the amplitude of the modulations. This relationship reveals information about the interplay between the energy required to bend graphene and the interaction energy, i.e. van der Waals energy, with the graphene layer below. Our experiments are supported by theoretical calculations which predict that the membrane topographical amplitude scales with the Moiré pattern wavelength, L as L^-1 + αL^-2. △ Less

Submitted 30 December, 2014; originally announced December 2014.

Comments: 20 pages, 5 figures

Journal ref: Carbon 50, 75 (2014)

Towards pristine graphene-metal interface and microstructures: Laser assisted direct patterning on Epitaxial graphene

Authors: A. Nath, M. Currie, V. D. Wheeler, M. J. Tadjer, A. D. Koehler, Z. R. Robinson, K. Sridhara, S. C. Hernandez, J. A. Wollmershauser, J. T Robinson, R. L. Myers-Ward, C. R. Eddy, Jr., M. V. Rao, D. K. Gaskill

Abstract: Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist resid… ▽ More Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent contact resistance. Here we demonstrate a femto-second laser assisted direct patterning of graphene microstructures that enables us to study both intrinsic and extrinsic effects on the graphene-metal interface. We show that a clean graphene-metal interface is not sufficient to obtain contact resistance approaching the intrinsic limit set by the quantum resistance. We also demonstrated that unlike CVD graphene, edge state conduction (or end-contact) is not spontaneously formed by metal deposition in case of graphene grown on SiC(0001). We conclude that for epitaxial graphene, intentional end-contact formation is necessary to obtain contact resistance near the quantum contact resistance limit. △ Less

Submitted 19 November, 2014; originally announced November 2014.

Comments: 18 pages, 5 figures

Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene

Authors: J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen, A. Tzalenchuk, T. Yager, S. Lara-Avila, S. Kubatkin, R. L. Myers-Ward, V. D. Wheeler, D. K. Gaskill, R. J. Nicholas

Abstract: Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interaction… ▽ More Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the predicted Bloch-Grüneisen power-law behaviour of $T^4$ at carrier temperatures from 1.4 K up to $\sim$100 K, due to electron-acoustic phonon interactions with a deformation potential coupling constant of 22 eV. A carrier density dependence $n_e^{-1.5}$ in the scaling of the $T^4$ power law is observed in bilayer graphene, in contrast to the $n_e^{-0.5}$ dependence in monolayer graphene, leading to a crossover in the energy loss rate as a function of carrier density between these two systems. The electron-phonon relaxation time in bilayer graphene is also shown to be strongly carrier density dependent, while it remains constant for a wide range of carrier densities in monolayer graphene. Our results and comparisons between the bilayer and monolayer exhibit a more comprehensive picture of hot carrier dynamics in graphene systems. △ Less

Submitted 22 September, 2014; originally announced September 2014.

Comments: 9 pages, 8 figures

Journal ref: J. Phys.: Condens. Matter 27 164202 (2015)

Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

Authors: M. Neek-Amal, P. Xu, D. Qi, P. M. Thibado, L. O. Nyakiti, V. D. Wheeler, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, F. M. Peeters

Abstract: Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the m… ▽ More Twisted graphene layers produce a moiré pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossible using first-principles density functional theory (DFT) due to the large supercell. Here, within elasticity theory we define the MP structure as the minimum energy configuration, thereby leaving the height amplitude as the only unknown parameter. The latter is determined from DFT calculations for AB and AA stacked bilayer graphene in order to eliminate all fitting parameters. Excellent agreement with scanning tunneling microscopy (STM) results across multiple substrates is reported as function of twist angle. △ Less

Submitted 4 July, 2014; originally announced July 2014.

Comments: to appear in Phys. Rev. B

Journal ref: Phys. Rev. B 90 (6), 064101 (2014)

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

Authors: Wan Sik Hwang, Pei Zhao, Kristof Tahy, Luke O. Nyakiti, Virginia D. Wheeler, Rachael. L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Joshua A. Robinson, Wilfried Haensch, Huili, Xing, Alan Seabaugh, Debdeep Jena

Abstract: We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNR… ▽ More We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices. △ Less

Submitted 25 October, 2013; originally announced October 2013.

Sensitive Room-Temperature Terahertz Detection via Photothermoelectric Effect in Graphene

Authors: Xinghan Cai, Andrei B. Sushkov, Ryan J. Suess, Mohammad M. Jadidi, Greg S. Jenkins, Luke O. Nyakiti, Rachael L. Myers-Ward, Shanshan Li, Jun Yan, D. Kurt Gaskill, Thomas E. Murphy, H. Dennis Drew, Michael S. Fuhrer

Abstract: Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism: photoexcited carriers rapidly thermalize due to strong electron-electron interactions, but lose energy to the lattice more slowly. The electron temperature gradient dr… ▽ More Terahertz (THz) radiation has uses from security to medicine; however, sensitive room-temperature detection of THz is notoriously difficult. The hot-electron photothermoelectric effect in graphene is a promising detection mechanism: photoexcited carriers rapidly thermalize due to strong electron-electron interactions, but lose energy to the lattice more slowly. The electron temperature gradient drives electron diffusion, and asymmetry due to local gating or dissimilar contact metals produces a net current via the thermoelectric effect. Here we demonstrate a graphene thermoelectric THz photodetector with sensitivity exceeding 10 V/W (700 V/W) at room temperature and noise equivalent power less than 1100 pW/Hz^1/2 (20 pW/Hz^1/2), referenced to the incident (absorbed) power. This implies a performance which is competitive with the best room-temperature THz detectors for an optimally coupled device, while time-resolved measurements indicate that our graphene detector is eight to nine orders of magnitude faster than those. A simple model of the response, including contact asymmetries (resistance, work function and Fermi-energy pinning) reproduces the qualitative features of the data, and indicates that orders-of-magnitude sensitivity improvements are possible. △ Less

Submitted 13 September, 2014; v1 submitted 14 May, 2013; originally announced May 2013.

Comments: Published 07 September 2014 in Nature Nanotechnology

Polarization selection rules for inter-Landau level transitions in epitaxial graphene revealed by infrared optical Hall effect

Authors: P. Kühne, V. Darakchieva, J. D. Tedesco, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill, R. Yakimova, C. M. Herzinger, J. A. Woollam, M. Schubert, T. Hofmann

Abstract: We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field… ▽ More We report on polarization selection rules of inter-Landau level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm-1 on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and anti-symmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau level transitions, respectively. From field-dependent measurements we identify that transitions in decoupled graphene mono-layers are governed by polarization mixing selection rules, whereas transitions in coupled graphene mono-layers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau level transitions with free charge carrier magneto-optic plasma oscillations. △ Less

Submitted 28 August, 2013; v1 submitted 4 May, 2013; originally announced May 2013.

Journal ref: Phys. Rev. Lett. 111, 077402 (2013)

Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology

Authors: Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins, Yanqing Wu, L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., D. Kurt Gaskill, Christos Dimitrakopoulos, Phaedon Avouris

Abstract: This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene te… ▽ More This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 μm and steps of 10\pm2 nm in height. While a carrier mobility above 3000 cm2/Vs at a carrier density of 1e12 cm-2 is obtained in a single graphene terrace domain at room temperature, the step edges can result in a vicinal step resistance of ~21 kΩ.μm. By orienting the transistor layout so that the entire channel lies within a single graphene terrace, and reducing the access resistance associated with the ungated part of the channel, a cut-off frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, which is the highest value reported on epitaxial graphene thus far. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Journal ref: IEEE Electron Device Letters vol. 32, pp. 1343-1345 (2011)

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer, Shu-Jen Han, Yanqing Wu, Wenjuan Zhu, D. Kurt Gaskill, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., Alfred Grill, Phaedon Avouris

Abstract: Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport… ▽ More Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 13 pages, 3 figures, accepted in Appl. Phys. Lett

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Authors: Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson, Jennifer K. Hite, Yang Yang, Kevin M. Daniels, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Joshua A. Robinson, Kathleen A. Trumbull, Maxwell T. Wetherington, Paul M. Campbell, D. Kurt Gaskill

Abstract: Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th… ▽ More Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 96, 222103 (2010)

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Authors: Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson, Glenn G. Jernigan, Karl D. Hobart, Fritz J. Kub, Marko J. Tadjer, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy Jr., Paul M. Campbell, D. Kurt Gaskill

Abstract: In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr… ▽ More In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 8 pages, 4 figures and supplementary info regarding procedure for transfer

Journal ref: ACS Nano 4(2), 1108-1114 (2010)

Epitaxial Graphene Growth on SiC Wafers

Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L. Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David Snyder, Xiaojun Weng, Eric Frantz

Abstract: An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm Si… ▽ More An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures

Journal ref: ECS Trans. 19, 117 (2009)

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, James C. Culbertson, Glenn G. Jernigan, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free c… ▽ More Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figures

Journal ref: ECS Trans. 19, 137 (2009)

Graphene formation on SiC substrates

Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A… ▽ More Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports. △ Less

Submitted 28 July, 2009; originally announced July 2009.

Comments: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figures

Journal ref: Mater. Sci. Forum 615-617, 211 (2009)

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M. McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C. Culbertson, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carr… ▽ More Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: Accepted for publication in Applied Physics Letters, 10 pages, 2 figures

Journal ref: Appl. Phys. Lett 95, 122102 (2009)

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Authors: Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the devic… ▽ More We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene. △ Less

Submitted 27 February, 2009; originally announced February 2009.

Comments: 13 pages including supplimental material. Submitted to Nature Materials 2/23/2009