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Characterization of Nuclear Magnetism at Ultralow and Zero Field using SQUIDs
Authors:
John Z. Myers,
Kai Buckenmaier,
Andrey N. Pravdivtsev,
Markus Plaumann,
Rainer Körber
Abstract:
Nuclear magnetism underpins areas such as medicine in magnetic resonance imaging (MRI). Hyperpolarization of nuclei enhances the quantity and quality of information that can be determined from these techniques by increasing their signal to noise ratios by orders of magnitude. However, some of these hyperpolarization techniques rely on the use of low to ultralow magnetic fields (ULF) (nTs-mTs). The…
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Nuclear magnetism underpins areas such as medicine in magnetic resonance imaging (MRI). Hyperpolarization of nuclei enhances the quantity and quality of information that can be determined from these techniques by increasing their signal to noise ratios by orders of magnitude. However, some of these hyperpolarization techniques rely on the use of low to ultralow magnetic fields (ULF) (nTs-mTs). The broadband character and ultrasensitive field sensitivity of superconducting quantum interference devices (SQUID) allow for probing nuclear magnetism at these fields, where other magnetometers, such as Faraday coils and flux gates do not. To this end, we designed a reactor to hyperpolarize [1-$^{13}$C]pyruvate with the technique, signal amplification by reversible exchange in shield enables alignment transfer to heteronuclei (SABRE-SHEATH). Hyperpolarized pyruvate has been shown to be very powerful for the diagnosis of tumours with MRI as its metabolism is associated with various pathologies. We were able to characterize the field sensitivity of our setup by simulating the filled reactor in relation to its placement in our ultralow noise, ULF MRI setup. Using the simulations, we determined that our hyperpolarization setup results in a $^{13}$C polarization of 0.4 %, a signal enhancement of $\sim$100~000~000 versus the predicted thermal equilibrium signal at earth field ($\sim$50 $μ$T). This results in a $^{13}$C signal of 6.20$\pm$0.34~pT, which with our ultralow noise setup, opens the possibility for direct observation of the hyperpolarization and the subsequent spin-lattice relaxation without system perturbation.
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Submitted 20 December, 2024; v1 submitted 26 September, 2024;
originally announced September 2024.
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Limits of dispersoid size and number density in oxide dispersion strengthened alloys fabricated with powder bed fusion-laser beam
Authors:
Nathan A. Wassermann,
Yongchang Li,
Alexander J. Myers,
Christopher A. Kantzos,
Timothy M. Smith,
Jack L. Beuth,
Jonathan A. Malen,
Lin Shao,
Alan J. H. McGaughey,
Sneha P. Narra
Abstract:
Previous work on additively-manufactured oxide dispersion strengthened alloys focused on experimental approaches, resulting in larger dispersoid sizes and lower number densities than can be achieved with conventional powder metallurgy. To improve the as-fabricated microstructure, this work integrates experiments with a thermodynamic and kinetic modeling framework to probe the limits of the dispers…
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Previous work on additively-manufactured oxide dispersion strengthened alloys focused on experimental approaches, resulting in larger dispersoid sizes and lower number densities than can be achieved with conventional powder metallurgy. To improve the as-fabricated microstructure, this work integrates experiments with a thermodynamic and kinetic modeling framework to probe the limits of the dispersoid sizes and number densities that can be achieved with powder bed fusion-laser beam. Bulk samples of a Ni-20Cr $+$ 1 wt.% Y$_2$O$_3$ alloy are fabricated using a range of laser power and scanning velocity combinations. Scanning transmission electron microscopy characterization is performed to quantify the dispersoid size distributions across the processing space. The smallest mean dispersoid diameter (29 nm) is observed at 300 W and 1200 mm/s, with a number density of 1.0$\times$10$^{20}$ m$^{-3}$. The largest mean diameter (72 nm) is observed at 200 W and 200 mm/s, with a number density of 1.5$\times$10$^{19}$ m$^{-3}$. Scanning electron microscopy suggests that a considerable fraction of the oxide added to the feedstock is lost during processing, due to oxide agglomeration and the ejection of oxide-rich spatter from the melt pool. After accounting for these losses, the model predictions for the dispersoid diameter and number density align with the experimental trends. The results suggest that the mechanism that limits the final number density is collision coarsening of dispersoids in the melt pool. The modeling framework is leveraged to propose processing strategies to limit dispersoid size and increase number density.
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Submitted 16 January, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Topological Quantum Gates in Homotopy Type Theory
Authors:
David Jaz Myers,
Hisham Sati,
Urs Schreiber
Abstract:
Despite the evident necessity of topological protection for realizing scalable quantum computers, the conceptual underpinnings of topological quantum logic gates had arguably remained shaky, both regarding their physical realization as well as their information-theoretic nature.
Building on recent results on defect branes in string/M-theory and on their holographically dual anyonic defects in co…
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Despite the evident necessity of topological protection for realizing scalable quantum computers, the conceptual underpinnings of topological quantum logic gates had arguably remained shaky, both regarding their physical realization as well as their information-theoretic nature.
Building on recent results on defect branes in string/M-theory and on their holographically dual anyonic defects in condensed matter theory, here we explain how the specification of realistic topological quantum gates, operating by anyon defect braiding in topologically ordered quantum materials, has a surprisingly slick formulation in parameterized point-set topology, which is so fundamental that it lends itself to certification in modern homotopically typed programming languages, such as cubical Agda.
We propose that this remarkable confluence of concepts may jointly kickstart the development of topological quantum programming proper as well as of real-world application of homotopy type theory, both of which have arguably been falling behind their high expectations; in any case, it provides a powerful paradigm for simulating and verifying topological quantum computing architectures with high-level certification languages aware of the actual physical principles of realistic topological quantum hardware.
In a companion article, we will explain how further passage to "dependent linear" homotopy data types naturally extends this scheme to a full-blown quantum programming/certification language in which our topological quantum gates may be compiled to verified quantum circuits, complete with quantum measurement gates and classical control.
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Submitted 4 March, 2023;
originally announced March 2023.
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Voltage-controlled antiferromagnetism in magnetic tunnel junctions
Authors:
Meng Xu,
Mingen Li,
Pravin Khanal,
Ali Habiboglu,
Blake Insana,
Yuzan Xiong,
Thomas Peterson,
Jason C. Myers,
Deborah Ortega,
Hongwei Qu,
C. L. Chien,
Wei Zhang,
Jian-Ping Wang,
W. G. Wang
Abstract:
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange b…
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We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized CoFeB allows sensitive detection of the exchange bias. It is found that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
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Submitted 26 January, 2021;
originally announced January 2021.
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Fluctuations in ballistic transport from Euler hydrodynamics
Authors:
Benjamin Doyon,
Jason Myers
Abstract:
We propose a general formalism, within large deviation theory, giving access to the exact statistics of fluctuations of ballistically transported conserved quantities in homogeneous, stationary states. The formalism is expected to apply to any system with an Euler hydrodynamic description, classical or quantum, integrable or not, in or out of equilibrium. We express the exact scaled cumulant gener…
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We propose a general formalism, within large deviation theory, giving access to the exact statistics of fluctuations of ballistically transported conserved quantities in homogeneous, stationary states. The formalism is expected to apply to any system with an Euler hydrodynamic description, classical or quantum, integrable or not, in or out of equilibrium. We express the exact scaled cumulant generating function (or full counting statistics) for any (quasi-)local conserved quantity in terms of the flux Jacobian. We show that the "extended fluctuation relations" of Bernard and Doyon follow from the linearity of the hydrodynamic equations, forming a marker of "freeness" much like the absence of hydrodynamic diffusion does. We show how an extension of the formalism gives exact exponential behaviours of spatio-temporal two-point functions of twist fields, with applications to order-parameter dynamical correlations in arbitrary homogeneous, stationary state. We explain in what situations the large deviation principle at the basis of the results fail, and discuss how this connects with nonlinear fluctuating hydrodynamics. Applying the formalism to conformal hydrodynamics, we evaluate the exact cumulants of energy transport in quantum critical systems of arbitrary dimension at low but nonzero temperatures, observing a phase transition for Lorentz boosts at the sound velocity.
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Submitted 1 February, 2019;
originally announced February 2019.
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Transport fluctuations in integrable models out of equilibrium
Authors:
Jason Myers,
M. J. Bhaseen,
Rosemary J. Harris,
Benjamin Doyon
Abstract:
We propose exact results for the full counting statistics, or the scaled cumulant generating function, pertaining to the transfer of arbitrary conserved quantities across an interface in homogeneous integrable models out of equilibrium. We do this by combining insights from generalised hydrodynamics with a theory of large deviations in ballistic transport. The results are applicable to a wide vari…
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We propose exact results for the full counting statistics, or the scaled cumulant generating function, pertaining to the transfer of arbitrary conserved quantities across an interface in homogeneous integrable models out of equilibrium. We do this by combining insights from generalised hydrodynamics with a theory of large deviations in ballistic transport. The results are applicable to a wide variety of physical systems, including the Lieb-Liniger gas and the Heisenberg chain. We confirm the predictions in non-equilibrium steady states obtained by the partitioning protocol, by comparing with Monte Carlo simulations of this protocol in the classical hard rod gas. We verify numerically that the exact results obey the correct non-equilibrium fluctuation relations with the appropriate initial conditions.
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Submitted 25 November, 2019; v1 submitted 5 December, 2018;
originally announced December 2018.
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Growth of Thin Oxidation-Resistive Crystalline Si Nanostructures on Graphene
Authors:
Naili Yue,
Joshua Myers,
Liqin Su,
Wentao Wang,
Fude Liu,
Raphael Tsu,
Yan Zhuang,
Yong Zhang
Abstract:
We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a single crystalline Si Raman mode at around 520 cm-1, a STM image of an ordered surface structure under ambient condition, and a Schottky junction with graphite. Ul…
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We report the growth of Si nanostructures, either as thin films or nanoparticles, on graphene substrates. The Si nanostructures are shown to be single crystalline, air stable and oxidation resistive, as indicated by the observation of a single crystalline Si Raman mode at around 520 cm-1, a STM image of an ordered surface structure under ambient condition, and a Schottky junction with graphite. Ultra-thin silicon regions exhibit silicene-like behavior, including a Raman mode at around 550 cm-1, a triangular lattice structure in STM that has distinctly different lattice spacing from that of either graphene or thicker Si, and metallic conductivity of up to 500 times higher than that of graphite. This work suggests a bottom-up approach to forming a Si nanostructure array on a large scale patterned graphene substrate for fabricating nanoscale Si electronic devices.
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Submitted 30 March, 2018;
originally announced April 2018.
