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Ultrafast Dynamics of Coherent Phonon Modes in Excitonic Insulator Ta$_2$NiSe$_5$
Authors:
Vikas Arora,
Sukanya Pal,
Luminita Harnagea,
D. V. S. Muthu,
A K Sood
Abstract:
The spontaneous condensation of excitons in the excitonic insulating phase has been reported in Ta$_2$NiSe$_5$ below 325 K. In this context, we present the temperature-dependent optical pump optical probe spectroscopy of Ta$_2$NiSe$_5$, with a focus on coherent phonon dynamics. In addition to the fast relaxation process involving excitonic recombination, we observe a systematic behavior for the sl…
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The spontaneous condensation of excitons in the excitonic insulating phase has been reported in Ta$_2$NiSe$_5$ below 325 K. In this context, we present the temperature-dependent optical pump optical probe spectroscopy of Ta$_2$NiSe$_5$, with a focus on coherent phonon dynamics. In addition to the fast relaxation process involving excitonic recombination, we observe a systematic behavior for the slow relaxation process associated with the relaxation of hot phonons. The asymmetry parameter and cubic anharmonicity of the 3 THz mode demonstrate the structural transition across T$_C$=325 K, whereas the order parameter nature and asymmetry of 2 THz modes reveal its coupling with the excitonic phase of Ta$_2$NiSe$_5$. Coherent phonon modes display less anharmonicity compared to the corresponding Raman modes. Continuous Wavelet Transform (CWT) reveals that the peak time t$_{peak}$ of phonons is similar for all modes except the 3 THz mode. The temperature dependence of t$_{peak}$ for the M3 mode exhibits a possible role of excitonic condensate below T$_c$ in the formation of quasiparticle (phonon). CWT analysis supports the time-dependent asymmetry of the M3 mode caused by photoexcited carriers. This study illustrates the role of photoexcited carriers in depicting a structural transition and dressing of coherent phonons and, hence, demonstrating many-body effects.
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Submitted 27 November, 2024;
originally announced November 2024.
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Pressure Dependence of Ultrafast Carrier Dynamics in Excitonic Insulator Ta$_2$NiSe$_5$
Authors:
Vikas Arora,
Victor S Muthu,
Arijit Sinha,
Luminita Harnagea,
U V Waghmare,
A K Sood
Abstract:
An excitonic insulator (EI) phase is a consequence of collective many-body effects where an optical band gap is formed by the condensation of electron-hole pairs or excitons. We report pressure-dependent optical pump optical probe spectroscopy of EI Ta$_2$NiSe$_5$ in an on-site in situ geometry. The fast relaxation process depicts the transition across P$_{C_1}$ $\sim$1 GPa from EI phase to a semi…
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An excitonic insulator (EI) phase is a consequence of collective many-body effects where an optical band gap is formed by the condensation of electron-hole pairs or excitons. We report pressure-dependent optical pump optical probe spectroscopy of EI Ta$_2$NiSe$_5$ in an on-site in situ geometry. The fast relaxation process depicts the transition across P$_{C_1}$ $\sim$1 GPa from EI phase to a semiconductor and P$_{C_2}$ $\sim$3 GPa from a semiconductor to a semimetallic phase. The instability of the EI phase beyond P$_{C_1}$ is captured by the Rothwarf-Taylor model by incorporating the decrease of the bandgap under pressure. The pressure coefficient of the bandgap decreases, 65 meV/GPa closely agrees with the first principle calculations.
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Submitted 26 November, 2024;
originally announced November 2024.
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Twist Angle Dependent Ultrafast Transient Dynamics of MoSe$_2$/WSe$_2$ van der Waals Heterostructures beyond the Exciton Mott Transition
Authors:
Vikas Arora,
Pramoda K Nayak,
Victor S Muthu,
A K Sood
Abstract:
Two-dimensional van der Waals heterostructures (HS) exhibit twist-angle ($θ$) dependent interlayer charge transfer, driven by moiré potential that tunes the electronic band structure with varying $θ$. Apart from the magic angles of $\sim$3$^\circ$ and $\sim$57.5$^\circ$ that show flat valence bands (twisted WSe$_2$ bilayer), the commensurate angles of 21.8$^\circ$ and 38.2$^\circ$ reveal the Umkla…
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Two-dimensional van der Waals heterostructures (HS) exhibit twist-angle ($θ$) dependent interlayer charge transfer, driven by moiré potential that tunes the electronic band structure with varying $θ$. Apart from the magic angles of $\sim$3$^\circ$ and $\sim$57.5$^\circ$ that show flat valence bands (twisted WSe$_2$ bilayer), the commensurate angles of 21.8$^\circ$ and 38.2$^\circ$ reveal the Umklapp light coupling of interlayer excitons. We report our results on non-degenerate optical pump-optical probe spectroscopy of MoSe$_2$/WSe$_2$ HS at large twist angles under high photoexcitation densities above the Mott transition threshold, generating interlayer localized charge carriers. We show that the recombination time of electrons and holes is minimum at the commensurate angles. The strength of non-radiative interlayer Auger recombination also shows a minimum at the commensurate angles. The fluence dependence of interlayer carrier recombination time suggests additional relaxation channels near the commensurate angles. This study emphasizes the significance of the large twist angle of HS in developing transition metal dichalcogenides-based optoelectronic devices.
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Submitted 3 June, 2025; v1 submitted 25 November, 2024;
originally announced November 2024.
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Ultrafast Spectroscopy of Dirac Semimetal Cd3As2 under Pressure
Authors:
Vikas Arora,
D. V. S. Muthu,
R Sankar,
A K Sood
Abstract:
Topological properties of a three-dimensional Dirac semimetal Cd3As2, protected by crystal rotation and time-reversal symmetry, can be tuned with the application of pressure. Ultrafast spectroscopy is a unique tool to investigate the character and time evolution of electronic states, emphasizing the signatures of transition. We designed an experimental setup for in-situ pressure-dependent ultrafas…
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Topological properties of a three-dimensional Dirac semimetal Cd3As2, protected by crystal rotation and time-reversal symmetry, can be tuned with the application of pressure. Ultrafast spectroscopy is a unique tool to investigate the character and time evolution of electronic states, emphasizing the signatures of transition. We designed an experimental setup for in-situ pressure-dependent ultrafast optical pump optical probe spectroscopy of Cd3As2 using a symmetric diamond anvil cell. The fast relaxation processes show significant changes across pressure-induced phase transitions at PC1, approximately 3 GPa, and PC2, approximately 9 GPa. A new sub-picosecond time scale relaxation dynamics emerges beyond PC2. Theoretical calculations of differential reflectivity for both interband and intraband processes indicate that the negative (positive) differential reflectivity (Delta R/R) results from the interband (intraband) processes. The pressure-dependent behavior of relaxation dynamics amplitudes beyond PC1 emphasized the necessity of incorporating quadratic band opening in the calculations, explaining the transition of Cd3As2 from a Dirac semimetal to a semiconducting phase. The time evolution of differential reflectivity is calculated using the electronic temperature as a function of time, as provided by the two-temperature model, which fits the experimental data.
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Submitted 24 November, 2024;
originally announced November 2024.
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Pressure-induced phase transition in pyrochlore iridates (Sm$_{1-x}$Bi$_x$)$_2$Ir$_2$O$_7$ ($x =$ 0, 0.02, and 0.10): Raman and X-ray diffraction studies
Authors:
M Rosalin,
K. A. Irshad,
Boby Joseph,
Prachi Telang,
Surjeet Singh,
D. V. S. Muthu,
A. K. Sood,
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Abstract:
The pyrochlore iridates, A$_2$Ir$_2$O$_7$, show a wide variety of structural, electronic, and magnetic properties controlled by the interplay of different exchange interactions, which can be tuned by external pressure. In this work, we report pressure-induced phase transitions at ambient temperature using synchrotron-based X-ray diffraction (up to ~ 20 GPa) and Raman-scattering measurements (up to…
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The pyrochlore iridates, A$_2$Ir$_2$O$_7$, show a wide variety of structural, electronic, and magnetic properties controlled by the interplay of different exchange interactions, which can be tuned by external pressure. In this work, we report pressure-induced phase transitions at ambient temperature using synchrotron-based X-ray diffraction (up to ~ 20 GPa) and Raman-scattering measurements (up to ~ 25 GPa) of the pyrochlore series (Sm$_{1-x}$Bi$_x$)$_2$Ir$_2$O$_7$ ($x =$ 0, 0.02, and 0.10). Our Raman and X-ray data suggest an iso-structural transition in Sm$_2$Ir$_2$O$_7$ at Pc ~ 11.2 GPa associated with the rearrangement of IrO6 octahedra in the pyrochlore lattice. The transition pressure decreases to ~ 10.2 and 9 GPa for $x =$ 0.02 and 0.10, respectively. For all the samples, the linewidth of three phonons associated with Ir-O-Ir (A1g and Eg) and Ir-O (T$_2$g$_4$) vibrations show anomalous decrease up to Pc, due to decrease in electron-phonon interaction.
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Submitted 13 May, 2024;
originally announced May 2024.
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Strong coupling of lattice and orbital excitations in quantum magnet Ca$_{10}$Cr$_7$O$_{28}$: Anomalous temperature dependence of Raman phonons
Authors:
Srishti Pal,
Arnab Seth,
Anzar Ali,
Yogesh Singh,
D. V. S. Muthu,
Subhro Bhattacharjee,
A. K. Sood
Abstract:
We report low-temperature Raman signatures of the Heisenberg quantum magnet Ca$_{10}$Cr$_7$O$_{28}$, showing clear anomalies in phonon mode frequencies and linewidths below $\sim$100 K. This crossover temperature lies in between the Jahn-Teller (JT) temperature scale ($>$ room temperature) and the temperature scale associated with the spin exchange interactions ($<$ 12 K). Our experimental observa…
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We report low-temperature Raman signatures of the Heisenberg quantum magnet Ca$_{10}$Cr$_7$O$_{28}$, showing clear anomalies in phonon mode frequencies and linewidths below $\sim$100 K. This crossover temperature lies in between the Jahn-Teller (JT) temperature scale ($>$ room temperature) and the temperature scale associated with the spin exchange interactions ($<$ 12 K). Our experimental observation is well captured by a novel secondary JT transition associated with a cooperative reorientation of the orbitals giving rise to anomalies in the temperature dependence of Raman frequencies and linewidths. Such orbital reorganisation, in turn, affects the spin-spin exchange interactions that decide the fate of the magnet at lower temperatures and hence provide important clues to understand the energetics of the possible lower temperature quantum paramagnetic phase.
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Submitted 6 August, 2023;
originally announced August 2023.
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Pressure-induced superconductivity in weak topological insulator BiSe
Authors:
Pallavi Malavi,
Arpita Paul,
Achintya Bera,
D V S Muthu,
Kunjalata Majhi,
P S Anil Kumar,
Umesh V. Waghmare,
A. K. Sood,
S. Karmakar
Abstract:
Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topological insulator as well as topological crystalline insulator. Here using structural, transport, spectroscopic measurements and density functional theory calculations, we show that BiSe exhibits rich phase diagram with th…
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Quasi-two-dimensional layered BiSe, a natural super-lattice with Bi2Se3-Bi2-Bi2Se3 units, has recently been predicted to be a dual topological insulator, simultaneously weak topological insulator as well as topological crystalline insulator. Here using structural, transport, spectroscopic measurements and density functional theory calculations, we show that BiSe exhibits rich phase diagram with the emergence of superconductivity with Tc ~8K under pressure. Sequential structural transitions into SnSe-type energetically tangled orthorhombic and CsCl-type cubic structures having distinct superconducting properties are identified at 8 GPa and 13 GPa respectively. Our observation of weak-antilocalization in magneto-conductivity suggests that spin-orbit coupling (SOC) plays a significant role in retaining non-trivial band topology in the trigonal phase with possible realization of 2D topological superconductivity. Theoretical analysis reveals that SOC significantly enhances superconducting Tc of the high-pressure cubic phase through an increase in electron-phonon coupling strength. Simultaneous emergence of Dirac-like surface states suggests cubic BiSe as a suitable candidate for the 3D-topological superconductor.
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Submitted 13 May, 2022;
originally announced May 2022.
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Pressure tuning of structure, magnetic frustration and carrier conduction in Kitaev spin liquid candidate Cu$_2$IrO$_3$: X-ray, Raman, magnetic susceptibility, resistivity and first-principles analysis
Authors:
Srishti Pal,
Pallavi Malavi,
Arijit Sinha,
Anzar Ali,
Piyush Sakrikar,
Boby Joseph,
Umesh V. Waghmare,
Yogesh Singh,
D. V. S. Muthu,
S. Karmakar,
A. K. Sood
Abstract:
The layered honeycomb lattice iridate Cu$_2$IrO$_3$ is the closest realization of the Kitaev quantum spin liquid, primarily due to the enhanced interlayer separation and nearly ideal honeycomb lattice. We report pressure-induced structural evolution of Cu$_2$IrO$_3$ by powder x-ray diffraction (PXRD) up to $\sim$17 GPa and Raman scattering measurements up to $\sim$25 GPa. A structural phase transi…
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The layered honeycomb lattice iridate Cu$_2$IrO$_3$ is the closest realization of the Kitaev quantum spin liquid, primarily due to the enhanced interlayer separation and nearly ideal honeycomb lattice. We report pressure-induced structural evolution of Cu$_2$IrO$_3$ by powder x-ray diffraction (PXRD) up to $\sim$17 GPa and Raman scattering measurements up to $\sim$25 GPa. A structural phase transition (monoclinic $C2/c \: \rightarrow$ triclinic $P\bar{1}$) is observed with a broad mixed phase pressure range ($\sim$4 to 15 GPa). The triclinic phase consists of heavily distorted honeycomb lattice with Ir-Ir dimer formation and a collapsed interlayer separation. In the stability range of the low-pressure monoclinic phase, structural evolution maintains the Kitaev configuration up to 4 GPa. This is supported by the observed enhanced magnetic frustration in dc susceptibility without emergence of any magnetic ordering and an enhanced dynamic Raman susceptibility. High-pressure resistance measurements up to 25 GPa in the temperature range 1.4--300 K show resilient non-metallic $R$($T$) behaviour with significantly reduced resistivity in the high-pressure phase. The Mott 3D variable-range-hopping conduction with much reduced characteristic energy scale $T_0$ suggests that the high-pressure phase is at the boundary of localized-itinerant crossover. Using first-principles density functional theoretical (DFT) calculations, we find that at ambient pressure $\rm Cu_2IrO_3$ exists in monoclinic $P2_1/c$ phase which is energetically lower than $C2/c$ phase (both the structures are consistent with experimental XRD pattern). DFT reveals structural transition from $P2_1/c$ to $P\bar{1}$ structure at 7 GPa (involving dimerization of Ir-Ir bonds) in agreement with experimentally observed transition pressure.
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Submitted 2 May, 2022;
originally announced May 2022.
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Raman fingerprints of fractionalized Majorana excitations in honeycomb iridate Ag$_3$LiIr$_2$O$_6$
Authors:
Srishti Pal,
Vinod Kumar,
Debendra Prasad Panda,
A. Sundaresan,
Avinash V. Mahajan,
D. V. S. Muthu,
A. K. Sood
Abstract:
We report low-temperature (down to $\sim$5 K) Raman signatures of the recently discovered intercalated honeycomb magnet Ag$_3$LiIr$_2$O$_6$, a putative Kitaev quantum spin liquid (QSL) candidate. The Kitaev QSL is predicted to host Majorana fermions as its emergent elementary excitations through a thermal fractionalization of entangled spins $S = 1/2$. We observe evidence of this fractionalization…
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We report low-temperature (down to $\sim$5 K) Raman signatures of the recently discovered intercalated honeycomb magnet Ag$_3$LiIr$_2$O$_6$, a putative Kitaev quantum spin liquid (QSL) candidate. The Kitaev QSL is predicted to host Majorana fermions as its emergent elementary excitations through a thermal fractionalization of entangled spins $S = 1/2$. We observe evidence of this fractionalization in the low-energy magnetic continuum whose temperature evolution harbours signatures of the predicted Fermi statistics obeyed by the itinerant Majorana quasiparticles. The magnetic Raman susceptibility evinces a crossover from the conventional to a Kitaev paramagnetic state below the temperature of $\sim$80 K. Additionally, the development of the Fano asymmetry in the low frequency phonon mode and the enhancement of integrated Raman susceptibilities below the crossover temperature signifies prominent coupling between the vibrational and Majorana fermionic excitations.
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Submitted 13 January, 2022;
originally announced January 2022.
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Raman and first-principles study of the pressure induced Mott-insulator to metal transition in bulk FePS$_3$
Authors:
Subhadip Das,
Shashank Chaturvedi,
Debashis Tripathy,
Shivani Grover,
Rajendra Singh,
D. V. S. Muthu,
S. Sampath,
U. V. Waghmare,
A. K. Sood
Abstract:
Recently discovered class of 2D materials based on transition metal phosphorous trichalcogenides exhibit antiferromagnetic ground state, with potential applications in spintronics. Amongst them, FePS$ _{3} $ is a Mott insulator with a band gap of $\sim$ 1.5 eV. This study using Raman spectroscopy along with first-principles density functional theoretical analysis examines the stability of its stru…
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Recently discovered class of 2D materials based on transition metal phosphorous trichalcogenides exhibit antiferromagnetic ground state, with potential applications in spintronics. Amongst them, FePS$ _{3} $ is a Mott insulator with a band gap of $\sim$ 1.5 eV. This study using Raman spectroscopy along with first-principles density functional theoretical analysis examines the stability of its structure and electronic properties under pressure. Raman spectroscopy reveals two phase transitions at 4.6 GPa and 12 GPa marked by the changes in pressure coefficients of the mode frequencies and the number of symmetry allowed modes. FePS$_3$ transforms from the ambient monoclinic C2/m phase with a band gap of 1.54 eV to another monoclinic C2/m (band gap of 0.1 eV) phase at 4.6 GPa, followed by another transition at 12 GPa to the metallic trigonal P-31m phase. Our work complements recently reported high pressure X-ray diffraction studies.
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Submitted 10 September, 2021;
originally announced September 2021.
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Thickness dependent transition from the 1T$^\prime$ to Weyl semimetal phase in ultrathin MoTe$ _{2} $: Electrical transport, Noise and Raman studies
Authors:
Manabendra Kuiri,
Subhadip Das,
D. V. S. Muthu,
Anindya Das,
A K Sood
Abstract:
Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, $1/f$ noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nm thick) field-effect tran…
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Bulk 1T$^\prime$-MoTe$_2$ shows a structural phase transition from 1T$^\prime$ to Weyl semimetallic (WSM) $ T_{d} $ phase at $\sim$ 240 K. This phase transition and transport properties in the two phases have not been investigated on ultra-thin crystals. Here we report electrical transport, $1/f$ noise and Raman studies in ultra-thin 1T$^\prime$-MoTe$_2$ ($\sim$ 5 to 16 nm thick) field-effect transistors (FETs) devices as a function of temperature. The electrical resistivities for thickness 16 nm and 11 nm show maxima at temperatures 208 K and 178 K, respectively, making a transition from semiconducting to semi-metallic phase, hitherto not observed in bulk samples. Raman frequencies and linewidths for 11nm thick crystal show change around 178 K, attributed to additional contribution to the phonon self-energy due to enhanced electron-phonon interaction in the WSM phase. Further, the resistivity at low-temperature shows an upturn below 20 K along with the maximum in the power spectral density of the low frequency $1/f$ noise. The latter rules out the metal-insulator transition (MIT) being responsible for the upturn of resistivity below 20 K. The low temperature resistivity follows $ρ\propto 1/T$, changing to $ρ\propto T$ with increasing temperature supports electron-electron interaction physics at electron-hole symmetric Weyl nodes below 20 K. These observations will pave the way to unravel the properties of WSM state in layered ultra-thin van der Waals materials.
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Submitted 3 September, 2021; v1 submitted 1 September, 2021;
originally announced September 2021.
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Doping controlled Fano resonance in bilayer 1T$ ^{\prime} $-ReS$ _{2} $: Raman experiments and first-principles theoretical analysis
Authors:
Subhadip Das,
Suchitra Prasad,
Biswanath Chakraborty,
Bhakti Jariwala,
Sai Shradha,
D. V. S. Muthu,
Arnab Bhattacharya,
U. V. Waghmare,
A. K. Sood
Abstract:
In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving out-of-plane vibrational modes unaffected. Largest change is observed for the in-plane Raman mode at $\sim$ 151 cm$^{-1} $, which also shows doping induced Fan…
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In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving out-of-plane vibrational modes unaffected. Largest change is observed for the in-plane Raman mode at $\sim$ 151 cm$^{-1} $, which also shows doping induced Fano resonance with the Fano parameter 1/q = -0.17 at doping concentration of $\sim 3.7\times10^{13}$ cm$^{-2} $. A quantitative understanding of our results is provided by first-principles density functional theory (DFT), showing that the electron-phonon coupling (EPC) of in-plane modes is stronger than that of out-of-plane modes, and its variation with doping is independent of the layer stacking. The origin of large EPC is traced to 1T to 1T$ ^{\prime} $ structural phase transition of ReS$ _{2} $ involving in-plane displacement of atoms whose instability is driven by the nested Fermi surface of the 1T structure. Results are also compared with the isostructural trilayer ReSe$ _{2} $.
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Submitted 1 September, 2021;
originally announced September 2021.
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Role of spin-phonon and electron-phonon interactions in phonon renormalization of (Eu$_{1-x}$Bi$_x$)$_2$Ir$_2$O$_7$ across the metal-insulator phase transition: Temperature-dependent Raman and X-ray studies
Authors:
Anoop Thomas,
Prachi Telang,
Kshiti Mishra,
Martin Cesnek,
Jozef Bednarcik,
D V S Muthu,
Surjeet Singh,
A K Sood
Abstract:
We report temperature-dependent Raman scattering and X-ray diffraction studies of pyrochlore iridates, (Eu$_{1-x}$Bi$_x$)$_2$Ir$_2$O$_7$, for x=0, 0.02, 0.035, 0.05 and 0.1. The temperature variation in Raman experiments spans from 4 K to 300 K, covering the metal-insulator phase transition accompanied by paramagnetic to all-in/all-out (AIAO) spin ordering (T$_N$). These systems also show a Weyl s…
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We report temperature-dependent Raman scattering and X-ray diffraction studies of pyrochlore iridates, (Eu$_{1-x}$Bi$_x$)$_2$Ir$_2$O$_7$, for x=0, 0.02, 0.035, 0.05 and 0.1. The temperature variation in Raman experiments spans from 4 K to 300 K, covering the metal-insulator phase transition accompanied by paramagnetic to all-in/all-out (AIAO) spin ordering (T$_N$). These systems also show a Weyl semi-metal (WSM) phase at low temperatures (below ~50 K). We show that the Ir-O-Ir bond bending mode, A$_{1g}$ (510 cm$^{-1}$), shows anomalous softening in the magnetically ordered AIAO state, arising primarily from the spin-phonon interaction due to the phonon-modulation of the Dzyaloshinskii-Moriya (DM) spin-exchange interaction. The two stretching modes, T$_{2g}^1$ (307 cm$^{-1}$) and T$_{2g}^2$ (382 cm$^{-1}$) harden significantly in the magnetic insulating phase. The T$_{2g}$ phonons also show anomalous temperature dependence of their mode frequencies, hitherto unreported, due to strong electron-phonon coupling. The signatures of the WSM state are observed in phonon renormalization below 50 K due to strong electron-phonon interaction. Our experimental results establish strong magneto-elastic coupling below T$_N$ and significant electron-phonon interactions in the metallic phase above T$_N$ as well as in the low-temperature WSM state.
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Submitted 22 June, 2021;
originally announced June 2021.
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Magnetic and electronic ordering phenomena in the [Ru$_2$O$_6$] honeycomb lattice compound AgRuO$_3$
Authors:
Walter Schnelle,
Beluvalli E. Prasad,
Claudia Felser,
Martin Jansen,
Evgenia V. Komleva,
Sergey V. Streltsov,
Igor I. Mazin,
Dmitry Khalyavin,
Pascal Manuel,
Sukanya Pal,
D. V. S. Muthu,
A. K. Sood,
Ekaterina S. Klyushina,
Bella Lake,
Jean-Christophe Orain,
Hubertus Luetkens
Abstract:
The silver ruthenium oxide AgRuO$_3$ consists of honeycomb [Ru$_2^{5+}$O$_6^{2-}$] layers, and can be considered an analogue of SrRu$_2$O$_6$ with a different intercalation stage. We present measurements of magnetic susceptibility and specific heat on AgRuO$_3$ single crystals which reveal a sharp antiferromagnetic transition at 342(3)K. The electrical transport in single crystals of AgRuO$_3$ is…
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The silver ruthenium oxide AgRuO$_3$ consists of honeycomb [Ru$_2^{5+}$O$_6^{2-}$] layers, and can be considered an analogue of SrRu$_2$O$_6$ with a different intercalation stage. We present measurements of magnetic susceptibility and specific heat on AgRuO$_3$ single crystals which reveal a sharp antiferromagnetic transition at 342(3)K. The electrical transport in single crystals of AgRuO$_3$ is determined by a combination of activated conduction over an intrinsic semiconducting gap of $\approx$ 100 meV and carriers trapped and thermally released from defects. From powder neutron diffraction data a Néel-type antiferromagnetic structure with the Ru moments along the $c$ axis is derived. Raman and muon spin rotation spectroscopy measurements on AgRuO$_3$ powder samples indicate a further weak phase transition or a crossover in the temperature range 125-200 K. The transition does not show up in magnetic susceptibility and its origin is argued to be related to defects but cannot be fully clarified. The experimental findings are complemented by DFT-based electronic structure calculations. It is found that the magnetism in AgRuO$_3$ is similar to that of SrRu$_2$O$_6$, however with stronger intralayer and weaker interlayer magnetic exchange interactions.
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Submitted 8 March, 2021;
originally announced March 2021.
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Pressure-induced 1T to 3R structural phase transition in metallic VSe2: X-ray diffraction and first-principles theory
Authors:
Srishti Pal,
Koyendrila Debnath,
Satyendra Nath Gupta,
Luminita Harnagea,
D. V. S. Muthu,
Umesh V. Waghmare,
A. K. Sood
Abstract:
We study pressure-induced structural evolution of vanadium diselenide (VSe2), a 1T polymorphic member of the transition metal di-chalcogenide (TMD) family using synchrotron-based powder X-ray diffraction (PXRD) and first-principles density functional theory (DFT). Our XRD results reveal anomalies at P ~4 GPa in c/a ratio, V-Se bond length and Se-V-Se bond angle signalling an isostructural transiti…
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We study pressure-induced structural evolution of vanadium diselenide (VSe2), a 1T polymorphic member of the transition metal di-chalcogenide (TMD) family using synchrotron-based powder X-ray diffraction (PXRD) and first-principles density functional theory (DFT). Our XRD results reveal anomalies at P ~4 GPa in c/a ratio, V-Se bond length and Se-V-Se bond angle signalling an isostructural transition. This is followed by a first order structural transition from 1T (space group P-3m1) phase to a 3R (space group R-3m) phase at P ~11 GPa due to sliding of adjacent Se-V-Se layers. We present various scenarios to understand the experimental results within DFT and find that the 1T to 3R transition can be captured only after inclusion of enthalpic correction associated with errors in cell volume with underestimated transition pressure. The abrupt increase in the Debye-Waller factors of Se atoms by a factor of ~4 and hence the anharmonic effects across the structural transition pressure are hitherto not reported so far and hint a possible way to understand the mismatch between the experimental and theoretical transition pressure values.
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Submitted 14 June, 2021; v1 submitted 2 February, 2021;
originally announced February 2021.
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Probing signatures of fractionalization in candidate quantum spin liquid Cu2IrO3 via anomalous Raman scattering
Authors:
Srishti Pal,
Arnab Seth,
Piyush Sakrikar,
Anzar Ali,
Subhro Bhattacharjee,
D. V. S. Muthu,
Yogesh Singh,
A. K. Sood
Abstract:
Long-range entanglement in quantum spin liquids (QSLs) lead to novel low energy excitations with fractionalised quantum numbers and (in 2D) statistics. Experimental detection and manipulation of these excitations present a challenge particularly in view of diverse candidate magnets. A promising probe of fractionalisation is their coupling to phonons. Here we present Raman scattering results for th…
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Long-range entanglement in quantum spin liquids (QSLs) lead to novel low energy excitations with fractionalised quantum numbers and (in 2D) statistics. Experimental detection and manipulation of these excitations present a challenge particularly in view of diverse candidate magnets. A promising probe of fractionalisation is their coupling to phonons. Here we present Raman scattering results for the S = 1/2 honeycomb iridate Cu2IrO3, a candidate Kitaev QSL with fractionalised Majorana fermions and Ising flux excitations. We observe anomalous low temperature frequency shift and linewidth broadening of the Raman intensities in addition to a broad magnetic continuum both of which, we derive, are naturally attributed to the phonon decaying into itinerant Majoranas. The dynamic Raman susceptibility marks a crossover from the QSL to a thermal paramagnet at ~120 K. The phonon anomalies below this temperature demonstrate a strong phonon-Majorana coupling. These results provide for evidence of spin fractionalisation in Cu2IrO3.
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Submitted 2 July, 2021; v1 submitted 1 November, 2020;
originally announced November 2020.
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Symmetry induced phonon renormalization in few layers of 2H-MoTe$_2$ transistors: Raman and first-principles studies
Authors:
Subhadip Das,
Koyendrila Debnath,
Biswanath Chakraborty,
Anjali Singh,
Shivani Grover,
D. V. S. Muthu,
U. V. Waghmare,
A. K. Sood
Abstract:
Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in-situ Raman measurements of electrochemically top-gated 2, 3 and 7 layered 2H-MoTe$ _{2} $ channel based field-effect transistors (FETs). While the E$ ^{1}_{2g} $ and B$ _{2g} $ phonon modes exhibit…
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Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in-situ Raman measurements of electrochemically top-gated 2, 3 and 7 layered 2H-MoTe$ _{2} $ channel based field-effect transistors (FETs). While the E$ ^{1}_{2g} $ and B$ _{2g} $ phonon modes exhibit frequency softening and linewidth broadening with hole doping concentration (\textit{p}) up to $\sim$ 2.3 $\times$10$ ^{13} $/cm$ ^{2} $, A$ _{1g}$ shows relatively small frequency hardening and linewidth sharpening. The dependence of frequency renormalization of the E$ ^{1}_{2g} $ mode on the number of layers in these 2D crystals confirms that hole doping occurs primarily in the top two layers, in agreement with recent predictions. We present first-principles density functional theory (DFT) analysis of bilayer MoTe$ _{2} $ that qualitatively captures our observations, and explain that a relatively stronger coupling of holes with E$ ^{1}_{2g} $ or B$ _{2g} $ modes as compared with the A$ _{1g} $ mode originates from the in-plane orbital character and symmetry of the states at valence band maximum (VBM). The contrast between the manifestation of EPC in monolayer MoS$ _{2} $ and those observed here in a few-layered MoTe$ _{2} $ demonstrates the role of the symmetry of phonons and electronic states in determining the EPC in these isostructural systems.
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Submitted 3 September, 2021; v1 submitted 29 October, 2020;
originally announced October 2020.
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Tuning the structure of Skyrmion lattice system Cu2OSeO3 under pressure
Authors:
Srishti Pal,
Pallavi Malavi,
Shashank Chaturvedi,
Subhadip Das,
S. Karmakar,
D. V. S. Muthu,
Umesh V. Waghmare,
A. K. Sood
Abstract:
The insulating ferrimagnet Cu2OSeO3 shows a rich variety of phases such as skyrmion lattice and helical magnetism controlled by interplay of different exchange interactions which can be tuned by external pressure. In this work we have investigated pressure-induced phase transitions at room temperature using synchrotron based x- ray diffraction and Raman scattering measurements. With first-principl…
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The insulating ferrimagnet Cu2OSeO3 shows a rich variety of phases such as skyrmion lattice and helical magnetism controlled by interplay of different exchange interactions which can be tuned by external pressure. In this work we have investigated pressure-induced phase transitions at room temperature using synchrotron based x- ray diffraction and Raman scattering measurements. With first-principles theoretical analysis, we show that spin-spin exchange couplings in the ambient cubic phase are affected notably by hydrostatic pressure. The ambient cubic phase transforms to a monoclinic phase above 7 GPa and then to the triclinic phase above 11 GPa. Emergence of new phonon modes in the Raman spectra confirms these structural phase transitions. Notably, upon decompression, the crystal undergoes transition to a new monoclinic structure. Atomic coordinates have been refined in the low pressure cubic phase to capture the Cu-tetrahedra evolution responsible for the earlier reported magnetic behavior under pressure. Our experiments will motivate further studies of its emergent magnetic behavior under pressure.
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Submitted 25 November, 2020; v1 submitted 22 September, 2020;
originally announced September 2020.
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Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport and density functional theory
Authors:
Satyendra Nath Gupta,
Anjali Singh,
Koushik Pal,
D. V. S. Muthu,
C. Shekhar,
Yanpeng Qi,
Pavel G. Naumov,
Sergey A. Medvedev,
C. Felser,
U. V. Waghmare,
A. K. Sood
Abstract:
We report high pressure Raman, synchrotron x-ray diffraction and electrical transport studies on Weyl semimetals NbP and TaP along with first-principles density functional theoretical (DFT) analysis. The frequencies of first-order Raman modes of NbP harden with increasing pressure and exhibit a slope change at P$_c$ $\sim$ 9 GPa, and its resistivity exhibits a minimum at P$_c$. The pressure-depend…
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We report high pressure Raman, synchrotron x-ray diffraction and electrical transport studies on Weyl semimetals NbP and TaP along with first-principles density functional theoretical (DFT) analysis. The frequencies of first-order Raman modes of NbP harden with increasing pressure and exhibit a slope change at P$_c$ $\sim$ 9 GPa, and its resistivity exhibits a minimum at P$_c$. The pressure-dependent volume of NbP exhibits a change in its bulk modulus from 207 GPa to 243 GPa at P$_c$. Using DFT calculations, we show that these anomalies are associated with pressure induced Lifshitz transition which involves appearance of electron and hole pockets in its electronic structure. In contrast, results of Raman and synchrotron x-ray diffraction experiments on TaP and DFT calculations show that TaP is quite robust under pressure and does not undergo any phase transition.
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Submitted 27 September, 2017;
originally announced September 2017.
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Enhanced Raman and photoluminescence response in monolayer MoS$_2$ due to laser healing of defects
Authors:
Achintya Bera,
D V S Muthu,
A K Sood
Abstract:
Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS$_2$. The change in the carrier concentration, surrounding dielectric constant and defect concentration can modulate the photoluminescence and Raman spectra. Here we show that exposing the monolayer MoS$_2$ in air to a modes…
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Bound quasiparticles, negatively charged trions and neutral excitons, are associated with the direct optical transitions at the K-points of the Brillouin zone for monolayer MoS$_2$. The change in the carrier concentration, surrounding dielectric constant and defect concentration can modulate the photoluminescence and Raman spectra. Here we show that exposing the monolayer MoS$_2$ in air to a modest laser intensity for a brief period of time enhances simultaneously the photoluminescence (PL) intensity associated with both trions and excitons, together with $\sim$ 3 to 5 times increase of the Raman intensity of first and second order modes. The simultaneous increase of PL from trions and excitons cannot be understood based only on known-scenario of depletion of electron concentration in MoS$_2$ by adsorption of O$_2$ and H$_2$O molecules. This is explained by laser induced healing of defect states resulting in reduction of non-radiative Auger processes. This laser healing is corroborated by an observed increase of intensity of both the first order and second order 2LA(M) Raman modes by a factor of $\sim$ 3 to 5. The A$_{1g}$ mode hardens by $\sim$ 1.4 cm$^{-1}$ whereas the E$^1_{2g}$ mode softens by $\sim$ 1 cm$^{-1}$. The second order 2LA(M) Raman mode at $\sim$ 440 cm$^{-1}$ shows an increase in wavenumber by $\sim$ 8 cm$^{-1}$ with laser exposure. These changes are a combined effect of change in electron concentrations and oxygen-induced lattice displacements.
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Submitted 28 July, 2017;
originally announced July 2017.
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Pressure-dependent Semiconductor to Semimetal and Lifshitz transitions in 2H-MoTe$_2$: Raman and First-principles studies
Authors:
Achintya Bera,
Anjali Singh,
D V S Muthu,
U V Waghmare,
A K Sood
Abstract:
High pressure Raman spectroscopy of bulk 2H-MoTe$_2$ upto $\sim$ 29 GPa is shown to reveal two phase transitions (at $\sim$ 6 and 16.5 GPa), which are analyzed using first-principles density functional theoretical calculations. The transition at 6 GPa is marked by changes in the pressure coefficients of A$_{1g}$ and E$^{1}_{2g}$ Raman mode frequencies as well as in their relative intensity. Our ca…
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High pressure Raman spectroscopy of bulk 2H-MoTe$_2$ upto $\sim$ 29 GPa is shown to reveal two phase transitions (at $\sim$ 6 and 16.5 GPa), which are analyzed using first-principles density functional theoretical calculations. The transition at 6 GPa is marked by changes in the pressure coefficients of A$_{1g}$ and E$^{1}_{2g}$ Raman mode frequencies as well as in their relative intensity. Our calculations show that this is an isostructural semiconductor to a semimetal transition. The transition at $\sim$ 16.5 GPa is identified with the changes in linewidths of the Raman modes as well as in the pressure coefficients of their frequencies. Our theoretical analysis clearly shows that the structure remains the same upto 30 GPa. However, the topology of the Fermi-surface evolves as a function of pressure, and abrupt appearance of electron and hole pockets at P $\sim$ 20 GPa marks a Lifshitz transition.
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Submitted 1 February, 2017;
originally announced February 2017.
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Raman anomalies as signatures of pressure induced electronic topological and structural transitions in black phosphorus: Experiments and Theory
Authors:
Satyendra Nath Gupta,
Anjali Singh,
Koushik Pal,
Biswanath Chakraborti,
D. V. S. Muthu,
U V Waghmare,
A. K. Sood
Abstract:
We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density functional analysis reveals that this is associated with the anomalies in electron-phonon coupling at the semiconductor to topological insulator transition through inver…
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We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density functional analysis reveals that this is associated with the anomalies in electron-phonon coupling at the semiconductor to topological insulator transition through inversion of valence and conduction bands marking a change from trivial to nontrivial electronic topology. The frequencies of B$_{2g}$ and A$^2_g$ modes become anomalous in the rhombohedral phase at 7.4 GPa, and new modes appearing in the rhombohedral phase show anomalous softening with pressure. This is shown to originate from unusual structural evolution of black phosphorous with pressure, based on first-principles theoretical analysis.
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Submitted 19 September, 2017; v1 submitted 19 December, 2016;
originally announced December 2016.
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Metallic monoclinic phase in VO$_2$ induced by electrochemical gating: in-situ Raman study
Authors:
Satyendra Nath Gupta,
Anand Pal,
D. V. S. Muthu,
P. S. Anil Kumar,
A. K. Sood
Abstract:
We report in-situ Raman scattering studies of electrochemically top gated VO$_2$ thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage of 2.6 V. However, the number of Raman modes do not change with electrolyte gating showing that the metallic phase is still monoclinic. The high frequency Raman…
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We report in-situ Raman scattering studies of electrochemically top gated VO$_2$ thin film to address metal-insulator transition (MIT) under gating. The room temperature monoclinic insulating phase goes to metallic state at a gate voltage of 2.6 V. However, the number of Raman modes do not change with electrolyte gating showing that the metallic phase is still monoclinic. The high frequency Raman mode A$_g$(7) near 616 cm$^{-1}$ ascribed to V-O vibration of bond length 2.06 Å~ in VO$_6$ octahedra hardens with increasing gate voltage and the B$_g$(3) mode near 654 cm$^{-1}$ softens. This shows that the distortion of the VO$_6$ octahedra in the monoclinic phase decreases with gating. The time dependent Raman data at fixed gate voltages of 1 V (for 50 minute, showing enhancement of conductivity by a factor of 50) and 2 V (for 130 minute, showing further increase in conductivity by a factor of 5) show similar changes in high frequency Raman modes A$_g$(7) and B$_g$(3) as observed in gating. This slow change in conductance together with Raman frequency changes show that the governing mechanism for metalization is more likely to the diffusion controlled oxygen vacancy formation due to the applied electric field.
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Submitted 28 June, 2016;
originally announced June 2016.
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Spin liquid like Raman signatures in hyperkagome iridate Na$_4$Ir$_3$O$_8$
Authors:
Satyendra Nath Gupta,
P. V. Sriluckshmy,
Ashiwini Balodhi,
D. V. S. Muthu,
S. R. Hassan,
Yogesh Singh,
T. V. Ramakrishnan,
A. K. Sood
Abstract:
Combining Raman scattering measurements with mean field calculations of the Raman response we show that Kitaev-like magnetic exchange is dominant in the hyperkagome iridate Na$_4$Ir$_3$O$_8$. In the measurements we observe a broad Raman band at $\sim$~3500 cm$^{-1}$ with a band-width $\sim 1700$~cm$^{-1}$. Calculations of the Raman response of the Kitaev-Heisenberg model on the hyperkagome lattice…
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Combining Raman scattering measurements with mean field calculations of the Raman response we show that Kitaev-like magnetic exchange is dominant in the hyperkagome iridate Na$_4$Ir$_3$O$_8$. In the measurements we observe a broad Raman band at $\sim$~3500 cm$^{-1}$ with a band-width $\sim 1700$~cm$^{-1}$. Calculations of the Raman response of the Kitaev-Heisenberg model on the hyperkagome lattice shows that the experimental observations are consistent with calculated Raman response where Kitaev exchange interaction ($J_K$) is much larger than the Heisenberg term J$_1$ ($J_1/J_K \sim 0.1$). A comparison with the theoretical model gives an estimate of the Kitaev exchange interaction parameter.
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Submitted 8 November, 2016; v1 submitted 25 June, 2016;
originally announced June 2016.
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Electron-Hole Asymmetry in the Electron-phonon Coupling in Top-gated Phosphorene Transistor
Authors:
Biswanath Chakraborty,
Satyendra Nath Gupta,
Anjali Singh,
Manabendra Kuiri,
Chandan Kumar,
D. V. S. Muthu,
Anindya Das,
U. V. Waghmare,
A. K. Sood
Abstract:
Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises…
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Using in-situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that its phonons with A$_g$ symmetry depend much more strongly on concentration of electrons than that of holes, while the phonons with B$_g$ symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving $π$ and $σ$ bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.
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Submitted 9 March, 2016;
originally announced March 2016.
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Pressure-induced phase transition in Bi$_2$Se$_3$ at 3 GPa: electronic topological transition or not?
Authors:
Achintya Bera,
Koushik Pal,
D V S Muthu,
U V Waghmare,
A K Sood
Abstract:
In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi$_2$Se$_3$) using Raman spectroscopy at pressu…
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In recent years, a low pressure transition around P $\sim$ 3 GPa exhibited by the A$_2$B$_3$-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi$_2$Se$_3$) using Raman spectroscopy at pressure upto 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P $\sim$ 2.4 GPa followed by structural transitions at $\sim$ 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P $\sim$ 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated $\mathbb{Z}_2$ invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition.
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Submitted 18 February, 2016;
originally announced February 2016.
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Raman Signatures of Strong Kitaev Exchange Correlations in (Na$_{1-x}$Li$_x$)$_2$IrO$_3$ : Experiments and Theory
Authors:
Satyendra Nath Gupta,
P. V. Sriluckshmy,
Kavita Mehlawat,
Ashiwini Balodhi,
Dileep K Mishra,
D. V. S. Muthu,
S. R. Hassan,
Yogesh Singh,
T. V. Ramakrishnan,
A. K. Sood
Abstract:
Inelastic light scattering studies on single crystals of (Na$_{1-x}$Li$_x$)$_2$IrO$_3$ ($x = 0, 0.05$ and $0.15$) show a polarization independent broad band at $\sim $~2750 cm$^{-1}$ with a large band-width $\sim 1800$~cm$^{-1}$. For Na$_2$IrO$_3$ the broad band is seen for temperatures $ \leq 200$~K and persists inside the magnetically ordered state. For Li doped samples, the intensity of this mo…
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Inelastic light scattering studies on single crystals of (Na$_{1-x}$Li$_x$)$_2$IrO$_3$ ($x = 0, 0.05$ and $0.15$) show a polarization independent broad band at $\sim $~2750 cm$^{-1}$ with a large band-width $\sim 1800$~cm$^{-1}$. For Na$_2$IrO$_3$ the broad band is seen for temperatures $ \leq 200$~K and persists inside the magnetically ordered state. For Li doped samples, the intensity of this mode increases, shifts to lower wave-numbers and persists to higher temperatures. Such a mode has recently been predicted (Knolle et.al.) as a signature of the Kitaev spin liquid. We assign the observation of the broad band to be a signature of strong Kitaev-exchange correlations. The fact that the broad band persists even inside the magnetically ordered state suggests that dynamically fluctuating moments survive even below $T_{N}$. This is further supported by our mean field calculations. The Raman response calculated in mean field theory shows that the broad band predicted for the spin liquid state survives in the magnetically ordered state near the zigzag-spin liquid phase boundary. A comparison with the theoretical model gives an estimate of the Kitaev exchange interaction parameter to be $J_K\approx 57$~meV.
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Submitted 29 March, 2016; v1 submitted 10 August, 2014;
originally announced August 2014.
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Phonon Anomalies, Orbital-Ordering and Electronic Raman Scattering in iron-pnictide Ca(Fe0.97Co0.03)2As2: Temperature-dependent Raman Study
Authors:
Pradeep Kumar,
D. V. S. Muthu,
L. Harnagea,
S. Wurmehl,
B. Büchner,
A. K. Sood
Abstract:
We report inelastic light scattering studies on Ca(Fe0.97Co0.03)2As2 in a wide spectral range of 120-5200 cm-1 from 5K to 300K, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at Tsm ~ 160K. The mode frequencies of two first-order Raman modes B1g and Eg, both involving displacement of Fe atoms, show sharp increase below Tsm. Concomitantly, the linewidth…
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We report inelastic light scattering studies on Ca(Fe0.97Co0.03)2As2 in a wide spectral range of 120-5200 cm-1 from 5K to 300K, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at Tsm ~ 160K. The mode frequencies of two first-order Raman modes B1g and Eg, both involving displacement of Fe atoms, show sharp increase below Tsm. Concomitantly, the linewidths of all the first-order Raman modes show anomalous broadening below Tsm, attributed to strong spin-phonon coupling. The high frequency modes observed between 400-1200 cm-1 are attributed to the electronic Raman scattering involving the crystal field levels of d-orbitals of Fe2+. The splitting between xz and yz d-orbital levels is shown to be ~ 25 meV which increases as temperature decreases below Tsm. A broad Raman band observed at ~ 3200 cm-1 is assigned to two-magnon excitation of the itinerant Fe 3d antiferromagnet.
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Submitted 23 June, 2014;
originally announced June 2014.
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Temperature dependent magnetic, dielectric and Raman studies of partially disordered La2NiMnO6
Authors:
Pradeep Kumar,
S. Ghara,
B. Rajeswaran,
D. V. S. Muthu,
A. Sundaresan,
A. K. Sood
Abstract:
We report a detailed magnetic, dielectric and Raman studies on partially disordered and biphasic double perovskite La2NiMnO6. DC and AC magnetic susceptibility measurements show two magnetic anomalies at TC1 ~ 270 K and TC2 ~ 240 K, which may indicate the ferromagnetic ordering of the monoclinic and rhombohedral phases, respectively. A broad peak at a lower temperature (Tsg ~ 70 K) is also observe…
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We report a detailed magnetic, dielectric and Raman studies on partially disordered and biphasic double perovskite La2NiMnO6. DC and AC magnetic susceptibility measurements show two magnetic anomalies at TC1 ~ 270 K and TC2 ~ 240 K, which may indicate the ferromagnetic ordering of the monoclinic and rhombohedral phases, respectively. A broad peak at a lower temperature (Tsg ~ 70 K) is also observed indicating a spin-glass transition due to partial anti-site disorder of Ni2+ and Mn4+ ions. Unlike the pure monoclinic phase, the biphasic compound exhibits a broad but a clear dielectric anomaly around 270 K which is a signature of magneto-dielectric effect. Temperature-dependent Raman studies between the temperature range 12 K to 300 K in a wide spectral range from 220 cm-1 to 1530 cm-1 reveal a strong renormalization of the first as well as second-order Raman modes associated with the (Ni/Mn)O6 octahedra near TC1 implying a strong spin-phonon coupling. In addition, an anomaly is seen in the vicinity of spin-glass transition temperature in the temperature dependence of the frequency of the anti-symmetric stretching vibration of the octahedra.
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Submitted 26 December, 2013;
originally announced December 2013.
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Raman evidence for coupling of superconducting quasi-particles with a phonon and crystal field excitation in superconductor Ce0.6Y0.4FeAsO0.8F0.2
Authors:
Pradeep Kumar,
D. V. S. Muthu,
J. Prakash,
A. K. Ganguli,
A. K. Sood
Abstract:
We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature Tc ~ 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A1g phonon mode near 150 cm-1 associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth b…
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We report inelastic light scattering experiments on superconductor Ce0.6Y0.4FeAsO0.8F0.2 from 4K to 300K covering the superconducting transition temperature Tc ~ 48.6K. A strong evidence of the superconductivity induced phonon renormalization for the A1g phonon mode near 150 cm-1 associated with the Ce/Y vibrations is observed as reflected in the anomalous red-shift and decrease in the linewidth below Tc. Invoking the coupling of this mode with the superconducting gap, the superconducting gap (2) at zero temperature is estimated to be ~ 20 meV i.e the ratio is ~ 5, suggesting Ce0.6Y0.4FeAsO0.8F0.2 to belong to the class of strong coupling superconductors. In addition, the mode near 430 cm-1 associated with Ce3+ crystal field excitation also shows anomalous increase in its linewidth below Tc suggesting strong coupling between crystal field excitation and the superconducting quasi-particles. Our observations of two high frequency modes (S9 and S10) evidence the non-degenerate nature of Fe2+ dxz/yz orbitals suggesting the electronic nematicity in these systems.
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Submitted 18 October, 2013;
originally announced October 2013.
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Sharp Raman Anomalies and Broken Adiabaticity at a Pressure Induced Transition from Band to Topological Insulator in Sb2Se3
Authors:
Achintya Bera,
Koushik Pal,
D. V. S. Muthu,
Somaditya Sen,
Prasenjit Guptasarma,
U. V. Waghmare,
A. K. Sood
Abstract:
The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ET…
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The nontrivial electronic topology of a topological insulator is thus far known to display signatures in a robust metallic state at the surface. Here, we establish vibrational anomalies in Raman spectra of the bulk that signify changes in electronic topology: an E2 g phonon softens unusually and its linewidth exhibits an asymmetric peak at the pressure induced electronic topological transition (ETT) in Sb2Se3 crystal. Our first-principles calculations confirm the electronic transition from band to topological insulating state with reversal of parity of electronic bands passing through a metallic state at the ETT, but do not capture the phonon anomalies which involve breakdown of adiabatic approximation due to strongly coupled dynamics of phonons and electrons. Treating this within a four-band model of topological insulators, we elucidate how nonadiabatic renormalization of phonons constitutes readily measurable bulk signatures of an ETT, which will facilitate efforts to develop topological insulators by modifying a band insulator.
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Submitted 6 March, 2013;
originally announced March 2013.
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Symmetry-dependent phonon renormalization in monolayer MoS2 transistor
Authors:
Biswanath Chakraborty,
Achintya Bera,
D. V. S. Muthu,
Somnath Bhowmick,
U. V. Waghmare,
A. K. Sood
Abstract:
Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in-situ Raman scattering from single layer MoS$_2$ electrochemically top-gated field effect transistor (FET), we show softe…
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Strong electron-phonon interaction which limits electronic mobility of semiconductors can also have significant effects on phonon frequencies. The latter is the key to the use of Raman spectroscopy for nondestructive characterization of doping in graphene-based devices. Using in-situ Raman scattering from single layer MoS$_2$ electrochemically top-gated field effect transistor (FET), we show softening and broadening of A$_{1g}$ phonon with electron doping whereas the other Raman active E$_{2g}^{1}$ mode remains essentially inert. Confirming these results with first-principles density functional theory based calculations, we use group theoretical arguments to explain why A$_{1g}$ mode specifically exhibits a strong sensitivity to electron doping. Our work opens up the use of Raman spectroscopy in probing the level of doping in single layer MoS$_2$-based FETs, which have a high on-off ratio and are of enormous technological significance.
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Submitted 8 June, 2012;
originally announced June 2012.
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Superconducting Fluctuations and Anomalous Phonon Renormalization much above superconducting transition temperature in Ca4Al2O5.7Fe2As2
Authors:
Pradeep Kumar,
A. Bera,
D. V. S. Muthu,
P. M. Shirage,
A. Iyo,
A. K. Sood
Abstract:
Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of 5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K, reveal that the Raman mode at ~ 230 cm-1 shows a sharp jump in frequency by ~ 2 % and linewidth increases by ~ 175 % at To ~ 60 K. Below To, anomalous softening of the mode frequency and a large decrease by ~ 10 cm-1 in the linewidth is observe…
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Raman studies on Ca4Al2O5.7Fe2As2 superconductor in the temperature range of 5 K to 300 K, covering the superconducting transition temperature Tc ~ 28.3 K, reveal that the Raman mode at ~ 230 cm-1 shows a sharp jump in frequency by ~ 2 % and linewidth increases by ~ 175 % at To ~ 60 K. Below To, anomalous softening of the mode frequency and a large decrease by ~ 10 cm-1 in the linewidth is observed. These precursor effects at T0 (~ 2Tc) are attributed to significant superconducting fluctuations, possibly enhanced due to reduced dimensionality arising from weaked coupling between the well separated (~ 15 Å) Fe-As layers in the unit cell. A large blue-shift of the mode frequency between 300 K to 60 K (~7%) indicates strong spin-phonon coupling in this superconductor.
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Submitted 31 May, 2012;
originally announced May 2012.
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Coupled Phonons, Magnetic Excitations and Ferroelectricity in AlFeO3: Raman and First-principles Studies
Authors:
Pradeep Kumar,
A. Bera,
D. V. S. Muthu,
S. N. Shirodkar,
R. Saha,
A. Shireen,
A. Sundaresan,
U. V. Waghmare,
A. K. Sood,
C. N. R. Rao
Abstract:
We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering induced phonon renormalization are evident in (a) anomalous temperature dependence of many mo…
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We determine the nature of coupled phonons and magnetic excitations in AlFeO3 using inelastic light scattering from 5 K to 315 K covering a spectral range from 100-2200 cm-1 and complementary first-principles density functional theory-based calculations. A strong spin-phonon coupling and magnetic ordering induced phonon renormalization are evident in (a) anomalous temperature dependence of many modes with frequencies below 850 cm-1, particularly near the magnetic transition temperature Tc ~ 250 K, (b) distinct changes in band positions of high frequency Raman bands between 1100-1800 cm-1, in particular a broad mode near 1250 cm-1 appears only below Tc attributed to the two-magnon Raman scattering. We also observe weak anomalies in the mode frequencies at ~ 100 K, due to a magnetically driven ferroelectric phase transition. Understanding of these experimental observations has been possible on the basis of first-principles calculations of phonons spectrum and their coupling with spins.
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Submitted 28 April, 2012;
originally announced April 2012.
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Temperature-dependent Raman study of CeFeAsO0.9F0.1 Superconductor: Crystal field excitations, phonons and their coupling
Authors:
Pradeep Kumar,
Anil Kumar,
Surajit Saha,
D. V. S. Muthu,
J. Prakash,
U. V. Waghmare,
A. K. Ganguli,
A. K. Sood
Abstract:
We report temperature-dependent Raman spectra of CeFeAsO0.9F0.1 from 4 K to 300 K in spectral range of 60 to 1800 cm-1 and interpret them using estimates of phonon frequencies obtained from first-principles density functional calculations. We find evidence for a strong coupling between the phonons and crystal field excitations; in particular Ce3+ crystal field excitation at 432 cm-1 couples strong…
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We report temperature-dependent Raman spectra of CeFeAsO0.9F0.1 from 4 K to 300 K in spectral range of 60 to 1800 cm-1 and interpret them using estimates of phonon frequencies obtained from first-principles density functional calculations. We find evidence for a strong coupling between the phonons and crystal field excitations; in particular Ce3+ crystal field excitation at 432 cm-1 couples strongly with Eg oxygen vibration at 389 cm-1 . Below the superconducting transition temperature, the phonon mode near 280 cm-1 shows softening, signaling its coupling with the superconducting gap. The ratio of the superconducting gap to Tc thus estimated to be ~ 10 suggests CeFeAsO0.9F0.1 as a strong coupling superconductor. In addition, two high frequency modes observed at 1342 cm-1 and 1600 cm-1
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Submitted 29 November, 2011;
originally announced November 2011.
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Raman Evidence for Superconducting Gap and Spin-Phonon Coupling in Superconductor Ca(Fe0.95Co0.05)2As2
Authors:
Pradeep Kumar,
Achintya Bera,
D. V. S. Muthu,
Anil Kumar,
U. V. Waghmare,
L. Harnagea,
C. Hess,
S. Wurmehl,
S. Singh,
B. Büchner,
A. K. Sood
Abstract:
Inelastic light scattering studies on single crystal of electron-doped Ca(Fe0.95Co0.05)2As2 superconductor, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at TSM ~ 140 K and superconducting transition temperature Tc ~ 23 K, reveal evidence for superconductivity-induced phonon renormalization; in particular the phonon mode near 260 cm-1 shows hardening…
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Inelastic light scattering studies on single crystal of electron-doped Ca(Fe0.95Co0.05)2As2 superconductor, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at TSM ~ 140 K and superconducting transition temperature Tc ~ 23 K, reveal evidence for superconductivity-induced phonon renormalization; in particular the phonon mode near 260 cm-1 shows hardening below Tc, signaling its coupling with the superconducting gap. All the three Raman active phonon modes show anomalous temperature dependence between room temperature and Tc i.e phonon frequency decreases with lowering temperature. Further, frequency of one of the modes shows a sudden change in temperature dependence at TSM. Using first-principles density functional theory-based calculations, we show that the low temperature phase (Tc < T < TSM) exhibits short-ranged stripe anti-ferromagnetic ordering, and estimate the spin-phonon couplings that are responsible for these phonon anomalies.
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Submitted 29 November, 2011;
originally announced November 2011.
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Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3
Authors:
Gopal K. Pradhan,
Achintya Bera,
Pradeep Kumar,
D. V. S. Muthu,
A. K. Sood
Abstract:
We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appear…
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We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~ 8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm-1 which is dispersionless with pressure. The structural transition at ~ 8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm-1and 135 cm-1. The mode Grüneisen parameters are determined in both the α and β-phases.
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Submitted 27 November, 2011;
originally announced November 2011.
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Raman evidence for Orbiton-Mediated Multiphonon Scattering in Multiferroic TbMnO$_3$
Authors:
Pradeep Kumar,
Surajit Saha,
D. V. S. Muthu,
J. R. Sahu,
A. K. Sood,
C. N. R. Rao
Abstract:
Temperature-dependent Raman spectra of TbMnO$_3$ from 5 K to 300 K in the spectral range of 200 to 1525 cm$^{-1}$ show five first-order Raman allowed modes and two high frequency modes. The intensity ratio of the high frequency Raman band to the corresponding first order Raman mode is nearly constant and high ($\sim$ 0.6) at all temperatures, suggesting a orbiton-phonon mixed nature of the high fr…
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Temperature-dependent Raman spectra of TbMnO$_3$ from 5 K to 300 K in the spectral range of 200 to 1525 cm$^{-1}$ show five first-order Raman allowed modes and two high frequency modes. The intensity ratio of the high frequency Raman band to the corresponding first order Raman mode is nearly constant and high ($\sim$ 0.6) at all temperatures, suggesting a orbiton-phonon mixed nature of the high frequency mode. One of the first order phonon modes shows anomalous softening below T$_N$ ($\sim$ 46 K), suggesting a strong spin-phonon coupling.
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Submitted 9 April, 2010;
originally announced April 2010.
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Anomalous Raman scattering from phonons and electrons of superconducting FeSe$_{0.82}$
Authors:
Pradeep Kumar,
Anil Kumar,
Surajit Saha,
D. V. S. Muthu,
J. Prakash,
S. Patnaik,
U. V. Waghmare,
A. K. Ganguli,
A. K. Sood
Abstract:
We report interesting anomalies in the temperature dependent Raman spectra of FeSe$_{0.82}$ measured from 3K to 300K in the spectral range from 60 to 1800 cm$^{-1}$ and determine their origin using complementary first-principles density functional calculations. A phonon mode near 100 cm$^{-1}$ exhibits a sharp increase by $\sim$ 5% in frequency below a temperature T$_s$ ($\sim$ 100 K) attributed…
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We report interesting anomalies in the temperature dependent Raman spectra of FeSe$_{0.82}$ measured from 3K to 300K in the spectral range from 60 to 1800 cm$^{-1}$ and determine their origin using complementary first-principles density functional calculations. A phonon mode near 100 cm$^{-1}$ exhibits a sharp increase by $\sim$ 5% in frequency below a temperature T$_s$ ($\sim$ 100 K) attributed to strong spin-phonon coupling and onset of short-range antiferromagnetic order. In addition, two high frequency modes are observed at 1350 cm$^{-1}$ and 1600 cm$^{-1}$, attributed to electronic Raman scattering from ($x^2-y^2$)to $xz$ / $yz$ $d$-orbitals of Fe.
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Submitted 9 April, 2010;
originally announced April 2010.
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Low temperature and high pressure Raman and x-ray studies of pyrochlore Tb$_2$Ti$_2$O$_7$ : phonon anomalies and possible phase transition
Authors:
Surajit Saha,
D. V. S Muthu,
Surjeet Singh,
B. Dkhil,
R. Suryanarayanan,
G. Dhalenne,
H. K. Poswal,
S. Karmakar,
Surinder M. Sharma,
A. Revcolevschi,
A. K. Sood
Abstract:
We have carried out temperature and pressure-dependent Raman and x-ray measurements on single crystals of Tb$_2$Ti$_2$O$_7$. We attribute the observed anomalous temperature dependence of phonons to phonon-phonon anharmonic interactions. The quasiharmonic and anharmonic contributions to the temperature-dependent changes in phonon frequencies are estimated quantitatively using mode Grüneisen param…
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We have carried out temperature and pressure-dependent Raman and x-ray measurements on single crystals of Tb$_2$Ti$_2$O$_7$. We attribute the observed anomalous temperature dependence of phonons to phonon-phonon anharmonic interactions. The quasiharmonic and anharmonic contributions to the temperature-dependent changes in phonon frequencies are estimated quantitatively using mode Grüneisen parameters derived from pressure-dependent Raman experiments and bulk modulus from high pressure x-ray measurements. Further, our Raman and x-ray data suggest a subtle structural deformation of the pyrochlore lattice at $\sim$ 9 GPa. We discuss possible implications of our results on the spin-liquid behaviour of Tb$_2$Ti$_2$O$_7$.
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Submitted 23 April, 2009;
originally announced April 2009.
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Comparative High Pressure Raman Study of Boron Nitride Nanotubes and Hexagonal Boron Nitride
Authors:
Surajit Saha,
D. V. S. Muthu,
D. Golberg,
C. Tang,
C. Zhi,
Y. Bando,
A. K. Sood
Abstract:
High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiments on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompressio…
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High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiments on hexagonal Boron Nitride show a clear signature of a phase transition from hexagonal to wurtzite at ~ 13 GPa which is reversible on decompression. These results are contrasted with the pressure behavior of carbon nanotubes and graphite.
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Submitted 8 March, 2006;
originally announced March 2006.
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Reversible Pressure-Induced Amorphization in Solid C70 : Raman and Photoluminescence Study
Authors:
N. Chandrabhas,
Ajay K. Sood,
D. V. S. Muthu,
C. S. Sundar,
A. Bharathi,
Y. Hariharan,
C. N. R. Rao
Abstract:
We have studied single crystals of $C_{70}$ by Raman scattering and photoluminescence in the pressure range from 0 to 31.1 GPa. The Raman spectrum at 31.1 GPa shows only a broad band similar to that of the amorphous carbon without any trace of the Raman lines of $C_{70}$. After releasing the pressure from 31.1 GPa, the Raman and the photoluminescence spectra of the recovered sample are that of t…
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We have studied single crystals of $C_{70}$ by Raman scattering and photoluminescence in the pressure range from 0 to 31.1 GPa. The Raman spectrum at 31.1 GPa shows only a broad band similar to that of the amorphous carbon without any trace of the Raman lines of $C_{70}$. After releasing the pressure from 31.1 GPa, the Raman and the photoluminescence spectra of the recovered sample are that of the starting $C_{70}$ crystal. These results indicate that the $C_{70}$ molecules are stable upto 31.1 GPa and the amorphous carbon high pressure phase is reversible, in sharp contrast to the results on solid $C_{60}$. A qualitative explaination is suggested in terms of inter- versus intra-molecular interactions.
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Submitted 28 November, 1994;
originally announced November 1994.
