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Ultrafast reflectivity modulation in AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides
Authors:
A. Z. Garcia-Deniz,
P. Murzyn,
A. M. Fox,
D. O. Kundys,
J-P. R. Wells,
D. M. Whittaker,
M. S. Skolnick,
T. F. Krauss,
J. S. Roberts
Abstract:
We report an ultrafast optical tuning of the reflectivity of AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides using a reflection geometry, pump-probe technique.
We report an ultrafast optical tuning of the reflectivity of AlGaAs/InAlGaAs multiple quantum well photonic crystal waveguides using a reflection geometry, pump-probe technique.
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Submitted 11 February, 2014;
originally announced February 2014.
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The dynamics of amplified spontaneous emission in CdSe/ZnSe quantum dots
Authors:
D. O. Kundys,
P. Murzyn,
J. P. R. Wells,
A. I. Tartakovskii,
M. S. Skolnick,
Le Si Dang,
E. V. Lutsenko,
N. P. Tarasuk,
O. G. Lyublinskaya,
A. A. Toropov,
S. V. Ivanov
Abstract:
We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 4…
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We have used the variable stripe technique and pump-probe spectroscopy to investigate both gain and the dynamics of amplified spontaneous emission from CdSe quantum dot structures. We have found modal gain coefficients of 75 and 32 1/cm for asymmetric and symmetric waveguide structures, respectively. Amplified spontaneous emission decay times of 150 and 300 ps and carrier capture times of 15 and 40 ps were measured for the structures with high and low material gains respectively. The difference in the capture times are related to the fact that for the symmetric waveguide, carriers diffuse into the active region from the uppermost ZnMgSSe cladding layer, yielding a longer rise time for the pump-probe signals for this sample.
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Submitted 17 January, 2014;
originally announced January 2014.
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Spin-galvanic effect due to optical spin orientation
Authors:
S. D. Ganichev,
Petra Schneider,
V. V. Bel'kov,
E. L. Ivchenko,
S. A. Tarasenko,
W. Wegscheider,
D. Weiss,
D. Schuh,
B. N. Murdin,
P. J. Phillips,
C. R. Pidgeon,
D. G. Clarke,
M. Merrick,
P. Murzyn,
E. V. Beregulin,
W. Prettl
Abstract:
Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant inter-subband transitions have been obtained making use of the tunability of the free-electron laser FELIX. It is shown that a helicity dependent photocurrent a…
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Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant inter-subband transitions have been obtained making use of the tunability of the free-electron laser FELIX. It is shown that a helicity dependent photocurrent along one of the $<110>$ axes is predominantly contributed by the spin-galvanic effect while that along the perpendicular in-plane axis is mainly due to the circular photogalvanic effect. This strong non-equivalence of the [110] and [1$\bar{1}$0] directions is determined by the interplay between bulk and structural inversion asymmetries. A microscopic theory of the spin-galvanic effect for direct inter-subband optical transitions has been developed being in good agreement with experimental findings.
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Submitted 6 June, 2003; v1 submitted 11 March, 2003;
originally announced March 2003.
