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Ultrafast measurements of mode-specific deformation potentials of Bi$_2$Te$_3$ and Bi$_2$Se$_3$
Authors:
Yijing Huang,
José D. Querales-Flores,
Samuel W. Teitelbaum,
Jiang Cao,
Thomas Henighan,
Hanzhe Liu,
Mason Jiang,
Gilberto De la Peña,
Viktor Krapivin,
Johann Haber,
Takahiro Sato,
Matthieu Chollet,
Diling Zhu,
Tetsuo Katayama,
Robert Power,
Meabh Allen,
Costel R. Rotundu,
Trevor P. Bailey,
Ctirad Uher,
Mariano Trigo,
Patrick S. Kirchmann,
Éamonn D. Murray,
Zhi-Xun Shen,
Ivana Savic,
Stephen Fahy
, et al. (2 additional authors not shown)
Abstract:
Quantifying electron-phonon interactions for the surface states of topological materials can provide key insights into surface-state transport, topological superconductivity, and potentially how to manipulate the surface state using a structural degree of freedom. We perform time-resolved x-ray diffraction (XRD) and angle-resolved photoemission (ARPES) measurements on Bi$_2$Te$_3$ and Bi$_2$Se…
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Quantifying electron-phonon interactions for the surface states of topological materials can provide key insights into surface-state transport, topological superconductivity, and potentially how to manipulate the surface state using a structural degree of freedom. We perform time-resolved x-ray diffraction (XRD) and angle-resolved photoemission (ARPES) measurements on Bi$_2$Te$_3$ and Bi$_2$Se$_3$, following the excitation of coherent A$_{1g}$ optical phonons. We extract and compare the deformation potentials coupling the surface electronic states to local A$_{1g}$-like displacements in these two materials using the experimentally determined atomic displacements from XRD and electron band shifts from ARPES.We find the coupling in Bi$_2$Te$_3$ and Bi$_2$Se$_3$ to be similar and in general in agreement with expectations from density functional theory. We establish a methodology that quantifies the mode-specific electron-phonon coupling experimentally, allowing detailed comparison to theory. Our results shed light on fundamental processes in topological insulators involving electron-phonon coupling.
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Submitted 22 July, 2023;
originally announced July 2023.
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Influence of local symmetry on lattice dynamics coupled to topological surface states
Authors:
Jonathan A. Sobota,
Samuel W. Teitelbaum,
Yijing Huang,
José D. Querales-Flores,
Robert Power,
Meabh Allen,
Costel R. Rotundu,
Trevor P. Bailey,
Ctirad Uher,
Tom Henighan,
Mason Jiang,
Diling Zhu,
Matthieu Chollet,
Takahiro Sato,
Mariano Trigo,
Éamonn D. Murray,
Ivana Savić,
Patrick S. Kirchmann,
Stephen Fahy,
David. A. Reis,
Zhi-Xun Shen
Abstract:
We investigate coupled electron-lattice dynamics in the topological insulator Bi2Te3 with time-resolved photoemission and time-resolved x-ray diffraction. It is well established that coherent phonons can be launched by optical excitation, but selection rules generally restrict these modes to zone-center wavevectors and Raman-active branches. We find that the topological surface state couples to ad…
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We investigate coupled electron-lattice dynamics in the topological insulator Bi2Te3 with time-resolved photoemission and time-resolved x-ray diffraction. It is well established that coherent phonons can be launched by optical excitation, but selection rules generally restrict these modes to zone-center wavevectors and Raman-active branches. We find that the topological surface state couples to additional modes, including a continuum of surface-projected bulk modes from both Raman- and infrared-branches, with possible contributions from surface-localized modes when they exist. Our calculations show that this surface vibrational spectrum occurs naturally as a consequence of the translational and inversion symmetries broken at the surface, without requiring the splitting-off of surface-localized phonon modes. The generality of this result suggests that coherent phonon spectra are useful by providing unique fingerprints for identifying surface states in more controversial materials. These effects may also expand the phase space for tailoring surface state wavefunctions via ultrafast optical excitation.
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Submitted 19 December, 2022;
originally announced December 2022.
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Photo-induced plasmon-phonon coupling in PbTe
Authors:
M. P. Jiang,
M. Trigo,
S. Fahy,
A. Hauber,
É. D. Murray,
I Savić,
C. Bray,
J. N. Clark,
T. Henighan,
M. Kozina,
M. Chollet,
J. M. Glownia,
M. C. Hoffmann,
D. Zhu,
O. Delaire,
A. F. May,
B. C. Sales,
A. M. Lindenberg,
P. Zalden,
T. Sato,
R. Merlin,
D. A. Reis
Abstract:
We report the observation of photo-induced plasmon-phonon coupled modes in the group IV-VI semiconductor PbTe using Fourier-transform inelastic X-ray scattering at the Linac Coherent Light Source (LCLS). We measure the near-zone-center dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following ab…
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We report the observation of photo-induced plasmon-phonon coupled modes in the group IV-VI semiconductor PbTe using Fourier-transform inelastic X-ray scattering at the Linac Coherent Light Source (LCLS). We measure the near-zone-center dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above band gap photoexcitation.
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Submitted 3 September, 2021;
originally announced September 2021.
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Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits
Authors:
C. Kurter,
C. E. Murray,
R. T. Gordon,
B. B. Wymore,
M. Sandberg,
R. M. Shelby,
A. Eddins,
V. P. Adiga,
A. D. K. Finck,
E. Rivera,
A. A. Stabile,
B. Trimm,
B. Wacaser,
K. Balakrishnan,
A. Pyzyna,
J. Sleight,
M. Steffen,
K. Rodbell
Abstract:
Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information…
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Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the nonequilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
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Submitted 4 February, 2022; v1 submitted 21 June, 2021;
originally announced June 2021.
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Material matters in superconducting qubits
Authors:
Conal E. Murray
Abstract:
The progress witnessed within the field of quantum computing has been enabled by the identification and understanding of interactions between the state of the quantum bit (qubit) and the materials within its environment. Beginning with an introduction of the parameters used to differentiate various quantum computing approaches, we discuss the evolution of the key components that comprise supercond…
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The progress witnessed within the field of quantum computing has been enabled by the identification and understanding of interactions between the state of the quantum bit (qubit) and the materials within its environment. Beginning with an introduction of the parameters used to differentiate various quantum computing approaches, we discuss the evolution of the key components that comprise superconducting qubits, where the methods of fabrication can play as important a role as the composition in dictating the overall performance. We describe several mechanisms that are responsible for the relaxation or decoherence of superconducting qubits and the corresponding methods that can be utilized to characterize their influence. In particular, the effects of dielectric loss and its manifestation through the interaction with two-level systems (TLS) are discussed. We elaborate on the methods that are employed to quantify dielectric loss through the modeling of energy flowing through the surrounding dielectric materials, which can include contributions due to both intrinsic TLS and extrinsic aspects, such as those generated by processing. The resulting analyses provide insight into identifying the relative participation of specific sections of qubit designs and refinements in construction that can mitigate their impact on qubit quality factors. Additional prominent mechanisms that can lead to energy relaxation within qubits are presented along with experimental techniques which assess their importance. We close by highlighting areas of future research that should be addressed to help facilitating the successful scaling of superconducting quantum computing.
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Submitted 27 October, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles
Authors:
Đorđe Dangić,
Éamonn D. Murray,
Stephen Fahy,
Ivana Savić
Abstract:
Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first principles calculations, we characterize all different types of domain walls forming on ($11\bar{1}$), ($111$) and ($1\bar{1}0$) crystallographic planes in thermoelectric GeTe. We find large structural distortions in the vicinity of most of these domain walls,…
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Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first principles calculations, we characterize all different types of domain walls forming on ($11\bar{1}$), ($111$) and ($1\bar{1}0$) crystallographic planes in thermoelectric GeTe. We find large structural distortions in the vicinity of most of these domain walls, which are driven by polarization variations. We show that such strong strain-order parameter coupling will considerably reduce the lattice thermal conductivity of GeTe samples containing domain walls with respect to single crystal. Our results thus suggest that domain engineering is a promising path for enhancing the thermoelectric figure of merit of GeTe.
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Submitted 15 April, 2020;
originally announced April 2020.
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Analytical modeling of participation reduction in superconducting coplanar resonator and qubit designs through substrate trenching
Authors:
Conal E. Murray
Abstract:
A strategy aimed at decreasing dielectric loss in coplanar waveguides (CPW) and qubits involves the creation of trenches in the underlying substrate within the gaps of the overlying metallization. Participation of contamination layers residing on surfaces and interfaces in these designs can be reduced due to the change in the effective dielectric properties between the groundplane and conductor me…
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A strategy aimed at decreasing dielectric loss in coplanar waveguides (CPW) and qubits involves the creation of trenches in the underlying substrate within the gaps of the overlying metallization. Participation of contamination layers residing on surfaces and interfaces in these designs can be reduced due to the change in the effective dielectric properties between the groundplane and conductor metallization. Although finite element method approaches have been previously applied to quantify this decrease, an analytical method is presented that can uniquely address geometries possessing small to intermediate substrate trench depths. Conformal mapping techniques produce transformed CPW and qubit geometries without substrate trenching but a non-uniform contamination layer thickness. By parametrizing this variation, one can calculate surface participation through the use of a two-dimensional, analytical approximation that properly captures singularities in the electric field intensity near the metallization corners and edges. Examples demonstrate two regimes with respect to substrate trench depth that capture an initial increase in substrate-to-air surface participation due to the trench sidewalls and an overall decrease in surface participation due to the reduction in the effective dielectric constant, and are compared to experimental measurements to extract loss tangents on this surface.
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Submitted 25 August, 2020; v1 submitted 30 January, 2020;
originally announced January 2020.
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Evolution of non-thermal phonon and electron populations in photo-excited germanium on picosecond timescales
Authors:
F. Murphy-Armando,
É. D. Murray,
I. Savić,
M. Trigo,
D. Reis,
S. Fahy
Abstract:
We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by inter-valley electron-phonon scattering. We provide a full description of the phonon and electron relaxation dynamics without adjustable parameters. Simulations of the time-evolution of phonon populat…
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We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by inter-valley electron-phonon scattering. We provide a full description of the phonon and electron relaxation dynamics without adjustable parameters. Simulations of the time-evolution of phonon populations, based on first-principles band structure and electron-phonon and phonon-phonon matrix elements, are compared with data from time-resolved x-ray diffuse scattering experiments, performed at the LCLS x-ray free-electron laser facility, which measures the diffuse scattering intensity following photo-excitation by a 50 fs near-infrared optical pulse. Comparing calculations and measurements show that the intensity of the non-thermal x-ray diffuse scattering signal, that is observed to grow substantially near the L-point of the Brillouin zone over 3-5 ps, is due to phonons generated by scattering of carriers between the $Δ$ and L valleys. Non-thermal phonon populations throughout the Brillouin zone are observed and simulated from first principles without adjustable parameters for times up to 10 ps. With inclusion of phonon decay through 3-phonon processes, the simulations also account for other non-thermal features observed in the x-ray diffuse scattering intensity, which are due to anharmonic phonon-phonon scattering of the phonons initially generated by electron-phonon scattering.
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Submitted 2 December, 2020; v1 submitted 27 November, 2019;
originally announced November 2019.
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Measurements of Nonequilibrium Interatomic Forces in Photoexcited Bismuth
Authors:
Samuel W. Teitelbaum,
Thomas C. Henighan,
Hanzhe Liu,
Mason P. Jiang,
Diling Zhu,
Matthieu Chollet,
Takahiro Sato,
Éamonn D. Murray,
Stephen Fahy,
Shane O'Mahony,
Trevor P. Bailey,
Ctirad Uher,
Mariano Trigo,
David A. Reis
Abstract:
We determine experimentally the excited-state interatomic forces in photoexcited bismuth. The forces are obtained by a constrained least-squares fit of the excited-state dispersion obtained by femtosecond time-resolved x-ray diffuse scattering to a fifteen-nearest neighbor Born-von Karman model. We find that the observed softening of the zone-center $A_{1g}$ optical mode and transverse acoustic mo…
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We determine experimentally the excited-state interatomic forces in photoexcited bismuth. The forces are obtained by a constrained least-squares fit of the excited-state dispersion obtained by femtosecond time-resolved x-ray diffuse scattering to a fifteen-nearest neighbor Born-von Karman model. We find that the observed softening of the zone-center $A_{1g}$ optical mode and transverse acoustic modes with photoexcitation are primarily due to a weakening of three nearest neighbor forces along the bonding direction. This provides a more complete picture of what drives the partial reversal of the Peierls distortion previously observed in photoexcited bismuth.
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Submitted 20 August, 2019;
originally announced August 2019.
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Broadband Phonon Scattering in PbTe-based Materials Driven Near the Ferroelectric Phase Transition by Strain or Alloying
Authors:
Ronan M. Murphy,
Éamonn D. Murray,
Stephen Fahy,
Ivana Savić
Abstract:
The major obstacle in the design of materials with low lattice thermal conductivity is the difficulty in efficiently scattering phonons across the entire frequency spectrum. Using first principles calculations, we show that driving PbTe materials to the brink of the ferroelectric phase transition could be a powerful strategy to solve this problem. We illustrate this concept by applying tensile [00…
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The major obstacle in the design of materials with low lattice thermal conductivity is the difficulty in efficiently scattering phonons across the entire frequency spectrum. Using first principles calculations, we show that driving PbTe materials to the brink of the ferroelectric phase transition could be a powerful strategy to solve this problem. We illustrate this concept by applying tensile [001] strain to PbTe and its alloys with another rock-salt IV-VI material, PbSe; and by alloying PbTe with a rhombohedral IV-VI material, GeTe. This induces extremely soft optical modes at the zone center, which increase anharmonic acoustic-optical coupling and decrease phonon lifetimes at all frequencies. We predict that PbTe, Pb(Se,Te) and (Pb,Ge)Te alloys driven close to the phase transition in the described manner will have considerably lower lattice thermal conductivity than that of PbTe (by a factor of 2-3). The proposed concept may open new opportunities for the development of more efficient thermoelectric materials.
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Submitted 22 March, 2019;
originally announced March 2019.
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Ultrafast relaxation of symmetry-breaking photo-induced atomic forces
Authors:
Shane M. O'Mahony,
Felipe Murphy-Armando,
Éamonn D. Murray,
José D. Querales-Flores,
Ivana Savić,
Stephen Fahy
Abstract:
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited systems. We calculate the phonon-assisted decay of the photoexcited force on the low-symmetry $E_g$ mode following absorption of an ultrafast pulse in the prototypical group-V semimetals, Bi, Sb and As. The force decay lifetimes for Bi and Sb a…
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We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited systems. We calculate the phonon-assisted decay of the photoexcited force on the low-symmetry $E_g$ mode following absorption of an ultrafast pulse in the prototypical group-V semimetals, Bi, Sb and As. The force decay lifetimes for Bi and Sb are of the order of $10$ fs and in good agreement with recent experiments, demonstrating that electron-phonon scattering is the dominant mechanism relaxing the symmetry-breaking forces. Calculations for a range of absorbed photon energies suggest that larger amplitude, symmetry-breaking atomic motion may be induced by choosing a pump photon energy which maximises the product of the initial $E_g$ force and its lifetime. We also find that the high-symmetry $A_{1g}$ force undergoes a partial decay to a non-zero constant on similar timescales, which has not yet been measured in experiments. We observe that the imaginary part of the electron self-energy, averaged over the photoexcited carrier distribution, provides a reasonable estimate for the decay rate of symmetry-breaking forces.
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Submitted 2 March, 2019;
originally announced March 2019.
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Acoustic-Soft Optical Mode Coupling Leads to Negative Thermal Expansion of GeTe near the Ferroelectric Phase Transition
Authors:
Đorđe Dangić,
Aoife R. Murphy,
Éamonn D. Murray,
Stephen Fahy,
Ivana Savić
Abstract:
GeTe is a well-known ferroelectric and thermoelectric material that undergoes a structural phase transition from a rhombohedral to the rocksalt structure at $\sim 600-700$ K. We present a first principles approach to calculate the thermal expansion of GeTe in the rhombohedral phase up to the Curie temperature. We find the minimum of the Helmholtz free energy with respect to each structural paramet…
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GeTe is a well-known ferroelectric and thermoelectric material that undergoes a structural phase transition from a rhombohedral to the rocksalt structure at $\sim 600-700$ K. We present a first principles approach to calculate the thermal expansion of GeTe in the rhombohedral phase up to the Curie temperature. We find the minimum of the Helmholtz free energy with respect to each structural parameter in a manner similar to the traditional Gr{ü}neisen theory, and account for the temperature dependence of elastic constants. We obtain the temperature variation of the structural parameters of rhombohedral GeTe in very good agreement with experiments. In particular, we correctly reproduce a negative volumetric thermal expansion of GeTe near the phase transition. We show that the negative thermal expansion is induced by the coupling between acoustic and soft transverse optical phonons, which is also responsible for the low lattice thermal conductivity of GeTe.
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Submitted 7 July, 2018; v1 submitted 18 April, 2018;
originally announced April 2018.
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Analytical determination of participation in superconducting coplanar architectures
Authors:
Conal E. Murray,
Jay M. Gambetta,
Douglas T. McClure,
Matthias Steffen
Abstract:
Superconducting qubits are sensitive to a variety of loss mechanisms which include dielectric loss from interfaces. The calculation of participation near the key interfaces of planar designs can be accomplished through an analytical description of the electric field density based on conformal mapping. In this way, a two-dimensional approximation to coplanar waveguide and capacitor designs produces…
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Superconducting qubits are sensitive to a variety of loss mechanisms which include dielectric loss from interfaces. The calculation of participation near the key interfaces of planar designs can be accomplished through an analytical description of the electric field density based on conformal mapping. In this way, a two-dimensional approximation to coplanar waveguide and capacitor designs produces values of the participation as a function of depth from the top metallization layer as well as the volume participation within a given thickness from this surface by reducing the problem to a surface integration over the region of interest. These quantities are compared to finite element method numerical solutions, which validate the values at large distances from the coplanar metallization but diverge near the edges of the metallization features due to the singular nature of the electric fields. A simple approximation to the electric field energy at shallow depths (relative to the waveguide width) is also presented that closely replicates the numerical results based on conformal mapping and those reported in prior literature. These techniques are applied to the calculation of surface participation within a transmon qubit design, where the effects due to shunting capacitors can be easily integrated with those associated with metallization comprising the local environment of the qubit junction.
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Submitted 17 June, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Authors:
Xiqiao Wang,
Joseph A. Hagmann,
Pradeep Namboodiri,
Jonathan Wyrick,
Kai Li,
Roy E. Murray,
Alline Myers,
Frederick Misenkosen,
M. D. Stewart, Jr.,
Curt A. Richter,
Richard M. Silver
Abstract:
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deter…
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Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision. This approach to device fabrication has made Si:P monolayer systems a testbed for multiqubit quantum computing architectures and atomically precise 2-D superlattice designs whose behaviors are directly tied to the deterministic placement of single dopants. However, dopant segregation, diffusion, surface roughening, and defect formation during the encapsulation overgrowth introduce large uncertainties to the exact dopant placement and activation ratio. In this study, we develop a unique method by combining dopant segregation/diffusion models with sputter profiling simulation to monitor and control, at the atomic scale, dopant movement using room-temperature grown locking layers (LL). We explore the impact of LL growth rate, thickness, rapid thermal anneal, surface accumulation, and growth front roughness on dopant confinement, local crystalline quality, and electrical activation within Si:P 2-D systems. We demonstrate that dopant movement can be more efficiently suppressed by increasing the LL growth rate than by increasing LL thickness. We find that the dopant segregation length can be suppressed below a single Si lattice constant by increasing LL growth rates at room temperature while maintaining epitaxy. Although dopant diffusivity within the LL is found to remain high even below the hydrogen desorption temperature, we demonstrate that exceptionally sharp dopant confinement with high electrical quality within Si:P monolayers can be achieved by combining a high LL growth rate with a low-temperature LL rapid thermal anneal.
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Submitted 9 November, 2017;
originally announced November 2017.
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Direct Measurement of Anharmonic Decay Channels of a Coherent Phonon
Authors:
Samuel W. Teitelbaum,
Tom Henighan,
Yijing Huang,
Hanzhe Liu,
Mason P. Jiang,
Diling Zhu,
Matthieu Chollet,
Takahiro Sato,
Éamonn D. Murray,
Stephen Fahy,
Shane O'Mahony,
Trevor P. Bailey,
Ctirad Uher,
Mariano Trigo,
David A. Reis
Abstract:
We observe anharmonic decay of the photoexcited coherent A1g phonon in bismuth to points in the Brillouin zone where conservation of momentum and energy are satisfied for three-phonon scattering. The decay of a coherent phonon can be understood as a parametric resonance process whereby the atomic displacement periodically modulates the frequency of a broad continuum of modes. This results in energ…
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We observe anharmonic decay of the photoexcited coherent A1g phonon in bismuth to points in the Brillouin zone where conservation of momentum and energy are satisfied for three-phonon scattering. The decay of a coherent phonon can be understood as a parametric resonance process whereby the atomic displacement periodically modulates the frequency of a broad continuum of modes. This results in energy transfer through resonant squeezing of the target modes. Using ultrafast diffuse x-ray scattering, we observe build up of coherent oscillations in the target modes driven by this parametric resonance over a wide range of the Brillouin zone. We compare the extracted anharmonic coupling constant to first principles calculations for a representative decay channel.
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Submitted 20 October, 2017; v1 submitted 5 October, 2017;
originally announced October 2017.
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Electrically driven and electrically tunable quantum light sources
Authors:
J. P. Lee,
E. Murray,
A. J. Bennett,
D. J. P. Ellis,
C. Dangel,
I. Farrer,
P. Spencer,
D. A. Ritchie,
A. J. Shields
Abstract:
Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots…
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Compact and electrically controllable on-chip sources of indistinguishable photons are desirable for the development of integrated quantum technologies. We demonstrate that two quantum dot light emitting diodes (LEDs) in close proximity on a single chip can function as a tunable, all-electric quantum light source. Light emitted by an electrically excited driving LED is used to excite quantum dots the neighbouring diode. The wavelength of the quantum dot emission from the neighbouring driven diode is tuned via the quantum confined Stark effect. We also show that we can electrically tune the fine structure splitting.
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Submitted 16 January, 2017;
originally announced January 2017.
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Photoinduced suppression of the ferroelectric instability in PbTe
Authors:
M. P. Jiang,
M. Trigo,
S. Fahy,
É. D. Murray,
I. Savić,
C. Bray,
J. Clark,
T. Henighan,
M. Kozina,
M. Chollet,
J. M. Glownia,
M. Hoffmann,
D. Zhu,
O. Delaire,
A. F. May,
B. C. Sales,
A. M. Lindenberg,
P. Zalden,
T. Sato,
R. Merlin,
D. A. Reis
Abstract:
The interactions between electrons and phonons drive a large array of technologically relevant material properties including ferroelectricity, thermoelectricity, and phase-change behaviour. In the case of many group IV-VI, V, and related materials, these interactions are strong and the materials exist near electronic and structural phase transitions. Their close proximity to phase instability prod…
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The interactions between electrons and phonons drive a large array of technologically relevant material properties including ferroelectricity, thermoelectricity, and phase-change behaviour. In the case of many group IV-VI, V, and related materials, these interactions are strong and the materials exist near electronic and structural phase transitions. Their close proximity to phase instability produces a fragile balance among the various properties. The prototypical example is PbTe whose incipient ferroelectric behaviour has been associated with large phonon anharmonicity and thermoelectricity. Experimental measurements on PbTe reveal anomalous lattice dynamics, especially in the soft transverse optical phonon branch. This has been interpreted in terms of both giant anharmonicity and local symmetry breaking due to off-centering of the Pb ions. The observed anomalies have prompted renewed theoretical and computational interest, which has in turn revived focus on the extent that electron-phonon interactions drive lattice instabilities in PbTe and related materials. Here, we use Fourier-transform inelastic x-ray scattering (FT-IXS) to show that photo-injection of free carriers stabilizes the paraelectric state. With support from constrained density functional theory (CDFT) calculations, we find that photoexcitation weakens the long-range forces along the cubic direction tied to resonant bonding and incipient ferroelectricity. This demonstrates the importance of electronic states near the band edges in determining the equilibrium structure.
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Submitted 11 November, 2015;
originally announced November 2015.
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Cavity-enhanced coherent light scattering from a quantum dot
Authors:
A. J. Bennett,
J. P. Lee,
D. J. P. Ellis,
T. Meany,
E. Murray,
F. Floether,
J. P. Griffths,
I. Farrer,
D. A. Ritchie,
A. J. Shields
Abstract:
Resonant excitation of atoms and ions in macroscopic cavities has lead to exceptional control over quanta of light. Translating these advantages into the solid state with emitters in microcavities promises revolutionary quantum technologies in information processing and metrology. Key is resonant optical reading and writing from the emitter-cavity system. However, it has been widely expected that…
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Resonant excitation of atoms and ions in macroscopic cavities has lead to exceptional control over quanta of light. Translating these advantages into the solid state with emitters in microcavities promises revolutionary quantum technologies in information processing and metrology. Key is resonant optical reading and writing from the emitter-cavity system. However, it has been widely expected that the reflection of a resonant laser from a micro-fabricated wavelength-sized cavity would dominate any quantum signal. Here we demonstrate coherent photon scattering from a quantum dot in a micro-pillar. The cavity is shown to enhance the fraction of light which is resonantly scattered towards unity, generating anti-bunched indistinguishable photons a factor of 16 beyond the time-bandwidth limit, even when the transition is near saturation. Finally, deterministic excitation is used to create 2-photon N00N states with which we make super-resolving phase measurements in a photonic circuit.
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Submitted 7 August, 2015;
originally announced August 2015.
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High resolution three dimensional structural microscopy by single angle Bragg ptychography
Authors:
S. O. Hruszkewycz,
M. Allain,
M. V. Holt,
C. E. Murray,
J. R. Holt,
P. H. Fuoss,
V. Chamard
Abstract:
We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D s…
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We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D sample structure. This work introduces an entirely new means of three dimensional structural imaging of nanoscale materials and eliminates the experimental complexities associated with rotating nanoscale samples. We present the framework for the method and demonstrate our approach with a numerical demonstration, an analytical derivation, and an experimental reconstruction of lattice distortions in a component of a nanoelectronic prototype device.
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Submitted 3 June, 2015;
originally announced June 2015.
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Conditions for entangled photon emission from (111)B site-controlled Pyramidal quantum dots
Authors:
G. Juska,
E. Murray,
V. Dimastrodonato,
T. H. Chung,
S. Moroni,
A. Gocalinska,
E. Pelucchi
Abstract:
A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already reported in Juska et al. (Nat. Phot. 7, 527, 2013). Moreover, some of the limitations for a higher density of entangled photon emitters are addressed. Among these i…
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A study of highly symmetric site-controlled Pyramidal In0.25Ga0.75As quantum dots (QDs) is presented. It is discussed that polarization-entangled photons can be also obtained from Pyramidal QDs of different designs from the one already reported in Juska et al. (Nat. Phot. 7, 527, 2013). Moreover, some of the limitations for a higher density of entangled photon emitters are addressed. Among these issues are (1) a remaining small fine-structure splitting and (2) an effective QD charging under non-resonant excitation conditions, which strongly reduce the number of useful biexciton-exciton recombination events. A possible solution of the charging problem is investigated exploiting a dual-wavelength excitation technique, which allows a gradual QD charge tuning from strongly negative to positive and, eventually, efficient detection of entangled photons from QDs, which would be otherwise ineffective under a single-wavelength (non-resonant) excitation.
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Submitted 13 February, 2015;
originally announced February 2015.
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A Higher-Accuracy van der Waals Density Functional
Authors:
Kyuho Lee,
Éamonn D. Murray,
Lingzhu Kong,
Bengt I. Lundqvist,
David C. Langreth
Abstract:
We propose a second version of the van der Waals density functional (vdW-DF2) of Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)], employing a more accurate semilocal exchange functional and the use of a large-N asymptote gradient correction in determining the vdW kernel. The predicted binding energy, equilibrium separation, and potential-energy curve shape are close to those of accurate quantum c…
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We propose a second version of the van der Waals density functional (vdW-DF2) of Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)], employing a more accurate semilocal exchange functional and the use of a large-N asymptote gradient correction in determining the vdW kernel. The predicted binding energy, equilibrium separation, and potential-energy curve shape are close to those of accurate quantum chemical calculations on 22 duplexes. We anticipate the enabling of chemically accurate calculations in sparse materials of importance for condensed-matter, surface, chemical, and biological physics.
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Submitted 16 August, 2010; v1 submitted 26 March, 2010;
originally announced March 2010.
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Theoretical investigation of polarization-compensated II-IV/I-V perovskite superlattices
Authors:
Éamonn D. Murray,
David Vanderbilt
Abstract:
Recent work suggested that head-to-head and tail-to-tail domain walls could be induced to form in ferroelectric superlattices by introducing compensating "delta doping" layers via chemical substitution in specified atomic planes [Phys. Rev. B 73, 020103(R), 2006]. Here we investigate a variation of this approach in which superlattices are formed of alternately stacked groups of II-IV and I-V per…
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Recent work suggested that head-to-head and tail-to-tail domain walls could be induced to form in ferroelectric superlattices by introducing compensating "delta doping" layers via chemical substitution in specified atomic planes [Phys. Rev. B 73, 020103(R), 2006]. Here we investigate a variation of this approach in which superlattices are formed of alternately stacked groups of II-IV and I-V perovskite layers, and the "polar discontinuity" at the II-IV/I-V interface effectively provides the delta-doping layer. Using first-principles calculations on SrTiO3/KNbO3 as a model system, we show that this strategy allows for the growth of a superlattice with stable polarized regions and large polarization discontinuities at the internal interfaces. We also generalize a Wannier-based definition of layer polarizations in perovskite superlattices [Phys. Rev. Lett. 97, 107602 (2006)] to the case in which some (e.g., KO or NbO2) layers are non-neutral, and apply this method to quantify the local variations in polarization in the proposed SrTiO3/KNbO3 superlattice system.
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Submitted 11 December, 2008;
originally announced December 2008.
