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Quasiparticle tunneling as a probe of Josephson junction barrier and capacitor material in superconducting qubits
Authors:
C. Kurter,
C. E. Murray,
R. T. Gordon,
B. B. Wymore,
M. Sandberg,
R. M. Shelby,
A. Eddins,
V. P. Adiga,
A. D. K. Finck,
E. Rivera,
A. A. Stabile,
B. Trimm,
B. Wacaser,
K. Balakrishnan,
A. Pyzyna,
J. Sleight,
M. Steffen,
K. Rodbell
Abstract:
Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information…
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Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the nonequilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
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Submitted 4 February, 2022; v1 submitted 21 June, 2021;
originally announced June 2021.
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Material matters in superconducting qubits
Authors:
Conal E. Murray
Abstract:
The progress witnessed within the field of quantum computing has been enabled by the identification and understanding of interactions between the state of the quantum bit (qubit) and the materials within its environment. Beginning with an introduction of the parameters used to differentiate various quantum computing approaches, we discuss the evolution of the key components that comprise supercond…
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The progress witnessed within the field of quantum computing has been enabled by the identification and understanding of interactions between the state of the quantum bit (qubit) and the materials within its environment. Beginning with an introduction of the parameters used to differentiate various quantum computing approaches, we discuss the evolution of the key components that comprise superconducting qubits, where the methods of fabrication can play as important a role as the composition in dictating the overall performance. We describe several mechanisms that are responsible for the relaxation or decoherence of superconducting qubits and the corresponding methods that can be utilized to characterize their influence. In particular, the effects of dielectric loss and its manifestation through the interaction with two-level systems (TLS) are discussed. We elaborate on the methods that are employed to quantify dielectric loss through the modeling of energy flowing through the surrounding dielectric materials, which can include contributions due to both intrinsic TLS and extrinsic aspects, such as those generated by processing. The resulting analyses provide insight into identifying the relative participation of specific sections of qubit designs and refinements in construction that can mitigate their impact on qubit quality factors. Additional prominent mechanisms that can lead to energy relaxation within qubits are presented along with experimental techniques which assess their importance. We close by highlighting areas of future research that should be addressed to help facilitating the successful scaling of superconducting quantum computing.
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Submitted 27 October, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Analytical modeling of participation reduction in superconducting coplanar resonator and qubit designs through substrate trenching
Authors:
Conal E. Murray
Abstract:
A strategy aimed at decreasing dielectric loss in coplanar waveguides (CPW) and qubits involves the creation of trenches in the underlying substrate within the gaps of the overlying metallization. Participation of contamination layers residing on surfaces and interfaces in these designs can be reduced due to the change in the effective dielectric properties between the groundplane and conductor me…
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A strategy aimed at decreasing dielectric loss in coplanar waveguides (CPW) and qubits involves the creation of trenches in the underlying substrate within the gaps of the overlying metallization. Participation of contamination layers residing on surfaces and interfaces in these designs can be reduced due to the change in the effective dielectric properties between the groundplane and conductor metallization. Although finite element method approaches have been previously applied to quantify this decrease, an analytical method is presented that can uniquely address geometries possessing small to intermediate substrate trench depths. Conformal mapping techniques produce transformed CPW and qubit geometries without substrate trenching but a non-uniform contamination layer thickness. By parametrizing this variation, one can calculate surface participation through the use of a two-dimensional, analytical approximation that properly captures singularities in the electric field intensity near the metallization corners and edges. Examples demonstrate two regimes with respect to substrate trench depth that capture an initial increase in substrate-to-air surface participation due to the trench sidewalls and an overall decrease in surface participation due to the reduction in the effective dielectric constant, and are compared to experimental measurements to extract loss tangents on this surface.
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Submitted 25 August, 2020; v1 submitted 30 January, 2020;
originally announced January 2020.
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Analytical determination of participation in superconducting coplanar architectures
Authors:
Conal E. Murray,
Jay M. Gambetta,
Douglas T. McClure,
Matthias Steffen
Abstract:
Superconducting qubits are sensitive to a variety of loss mechanisms which include dielectric loss from interfaces. The calculation of participation near the key interfaces of planar designs can be accomplished through an analytical description of the electric field density based on conformal mapping. In this way, a two-dimensional approximation to coplanar waveguide and capacitor designs produces…
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Superconducting qubits are sensitive to a variety of loss mechanisms which include dielectric loss from interfaces. The calculation of participation near the key interfaces of planar designs can be accomplished through an analytical description of the electric field density based on conformal mapping. In this way, a two-dimensional approximation to coplanar waveguide and capacitor designs produces values of the participation as a function of depth from the top metallization layer as well as the volume participation within a given thickness from this surface by reducing the problem to a surface integration over the region of interest. These quantities are compared to finite element method numerical solutions, which validate the values at large distances from the coplanar metallization but diverge near the edges of the metallization features due to the singular nature of the electric fields. A simple approximation to the electric field energy at shallow depths (relative to the waveguide width) is also presented that closely replicates the numerical results based on conformal mapping and those reported in prior literature. These techniques are applied to the calculation of surface participation within a transmon qubit design, where the effects due to shunting capacitors can be easily integrated with those associated with metallization comprising the local environment of the qubit junction.
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Submitted 17 June, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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High resolution three dimensional structural microscopy by single angle Bragg ptychography
Authors:
S. O. Hruszkewycz,
M. Allain,
M. V. Holt,
C. E. Murray,
J. R. Holt,
P. H. Fuoss,
V. Chamard
Abstract:
We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D s…
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We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D sample structure. This work introduces an entirely new means of three dimensional structural imaging of nanoscale materials and eliminates the experimental complexities associated with rotating nanoscale samples. We present the framework for the method and demonstrate our approach with a numerical demonstration, an analytical derivation, and an experimental reconstruction of lattice distortions in a component of a nanoelectronic prototype device.
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Submitted 3 June, 2015;
originally announced June 2015.
