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First-Principles Calculation of Spin-Relaxation Due to Alloy and Electron-Phonon Scattering in Strained GeSn
Authors:
Kevin Sewell,
Felipe Murphy-Armando
Abstract:
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a direct band gap with increasing Sn content, which enhances optical properties, electron transport and we find also affects spin transport behaviour, which is cri…
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GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a direct band gap with increasing Sn content, which enhances optical properties, electron transport and we find also affects spin transport behaviour, which is critical for spintronics applications. We use first-principles electronic-structure theory to determine the spin-flip electron-alloy scattering parameters in n-type GeSn alloys. We also calculate the previously undetermined intervalley electron spin-phonon scattering parameters between the $L$ and $Γ$ valleys. These parameters are used to determine the electron-alloy and electron-phonon scattering contributions to the n-type spin-relaxation of GeSn, as a function of alloy content and temperature. As in the case of phonon scattering, alloy scattering reduces the spin-relaxation time. However, switching the spin transport from the typical $L$ valley of Ge to the $Γ$ valley by sufficient addition of Sn, the relaxation time can be substantially increased. For unstrained, room temperature GeSn, we find a Sn concentration of at least $10\%$ is required to achieve a spin-relaxation time greater than Ge, with $17\%$ Sn needed to increase the spin-relaxation time from the nanosecond range to the microsecond range. At low temperatures (30K), adding $10\%$ Sn can increase the spin-relaxation time from $10^{-7}$s to 0.1s. Applying biaxial tensile strain to GeSn further increases the spin-relaxation time and at a lower Sn content than in unstrained GeSn.
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Submitted 15 May, 2025;
originally announced May 2025.
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First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
Authors:
Kevin Sewell,
Felipe Murphy-Armando
Abstract:
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained…
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We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained GeSn, we find that a Sn concentration of at least $13.5\%$ is needed to achieve an electron mobility greater than that of Ge. Our results show that the mobility of GeSn can be over $25$ times higher than the mobility of Ge, or $10^5$ cm$^2$/(Vs). At $15K$, less than $6\%$ Sn incorporation into Ge quadruples its mobility, which suggests GeSn has potential applications as a high mobility 2D electron gas. Applying biaxial tensile strain to GeSn further increases the mobility and at a lower Sn content than in unstrained GeSn.
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Submitted 18 October, 2024;
originally announced October 2024.
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Quantum spin Hall phase in GeSn heterostructures on silicon
Authors:
B. M. Ferrari,
F. Marcantonio,
F. Murphy-Armando,
M. Virgilio,
F. Pezzoli
Abstract:
Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconducto…
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Quantum phases of solid-state electron systems look poised to sustain exotic phenomena and a very rich spin physics. We propose a practical silicon-based architecture that spontaneously sustains topological properties, while being fully compatible with the high-volume manufacturing capabilities of modern microelectronic foundries. Here we show how Ge1-xSnx alloys, an emerging group IV semiconductor, can be engineered into junctions that demonstrate a broken gap alignment. We predict such basic building block undergo a quantum phase transition that can elegantly accommodate the existence of gate-controlled chiral edge states directly on Si. This will enable tantalizing prospects for designing integrated circuits hosting quantum spin hall insulators and advanced topological functionalities.
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Submitted 6 October, 2022;
originally announced October 2022.
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Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first principles
Authors:
F. Murphy-Armando
Abstract:
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature, doping concentration and strain. We find excellent agreement to available experiments for the resistivity, mobility and Seebeck coefficient. These results are c…
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We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of single-crystalline bulk $n$-type silicon-germanium alloys vs Ge composition, temperature, doping concentration and strain. We find excellent agreement to available experiments for the resistivity, mobility and Seebeck coefficient. These results are combined with the experimental lattice thermal conductivity to calculate the thermoelectric figure of merit $ZT$, finding very good agreement with experiment. We predict that 3% tensile hydrostatic strain enhances the $n$-type $ZT$ by 50% at carrier concentrations of $n=10^{20}$ cm$^{-3}$ and temperature of $T=1200K$. These enhancements occur at different alloy compositions due to different effects: at 50% Ge composition the enhancements are achieved by a strain induced decrease in the Lorenz number, while the power factor remains unchanged. These characteristics are important for highly doped and high temperature materials, in which up to 50% of the heat is carried by electrons. At 70% Ge the increase in $ZT$ is due to a large increase in electrical conductivity produced by populating the high mobility $Γ$ conduction band valley, lowered in energy by strain.
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Submitted 27 November, 2019;
originally announced November 2019.
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Evolution of non-thermal phonon and electron populations in photo-excited germanium on picosecond timescales
Authors:
F. Murphy-Armando,
É. D. Murray,
I. Savić,
M. Trigo,
D. Reis,
S. Fahy
Abstract:
We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by inter-valley electron-phonon scattering. We provide a full description of the phonon and electron relaxation dynamics without adjustable parameters. Simulations of the time-evolution of phonon populat…
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We investigate from first-principles theory and experiment the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by inter-valley electron-phonon scattering. We provide a full description of the phonon and electron relaxation dynamics without adjustable parameters. Simulations of the time-evolution of phonon populations, based on first-principles band structure and electron-phonon and phonon-phonon matrix elements, are compared with data from time-resolved x-ray diffuse scattering experiments, performed at the LCLS x-ray free-electron laser facility, which measures the diffuse scattering intensity following photo-excitation by a 50 fs near-infrared optical pulse. Comparing calculations and measurements show that the intensity of the non-thermal x-ray diffuse scattering signal, that is observed to grow substantially near the L-point of the Brillouin zone over 3-5 ps, is due to phonons generated by scattering of carriers between the $Δ$ and L valleys. Non-thermal phonon populations throughout the Brillouin zone are observed and simulated from first principles without adjustable parameters for times up to 10 ps. With inclusion of phonon decay through 3-phonon processes, the simulations also account for other non-thermal features observed in the x-ray diffuse scattering intensity, which are due to anharmonic phonon-phonon scattering of the phonons initially generated by electron-phonon scattering.
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Submitted 2 December, 2020; v1 submitted 27 November, 2019;
originally announced November 2019.
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Ultrafast relaxation of symmetry-breaking photo-induced atomic forces
Authors:
Shane M. O'Mahony,
Felipe Murphy-Armando,
Éamonn D. Murray,
José D. Querales-Flores,
Ivana Savić,
Stephen Fahy
Abstract:
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited systems. We calculate the phonon-assisted decay of the photoexcited force on the low-symmetry $E_g$ mode following absorption of an ultrafast pulse in the prototypical group-V semimetals, Bi, Sb and As. The force decay lifetimes for Bi and Sb a…
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We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited systems. We calculate the phonon-assisted decay of the photoexcited force on the low-symmetry $E_g$ mode following absorption of an ultrafast pulse in the prototypical group-V semimetals, Bi, Sb and As. The force decay lifetimes for Bi and Sb are of the order of $10$ fs and in good agreement with recent experiments, demonstrating that electron-phonon scattering is the dominant mechanism relaxing the symmetry-breaking forces. Calculations for a range of absorbed photon energies suggest that larger amplitude, symmetry-breaking atomic motion may be induced by choosing a pump photon energy which maximises the product of the initial $E_g$ force and its lifetime. We also find that the high-symmetry $A_{1g}$ force undergoes a partial decay to a non-zero constant on similar timescales, which has not yet been measured in experiments. We observe that the imaginary part of the electron self-energy, averaged over the photoexcited carrier distribution, provides a reasonable estimate for the decay rate of symmetry-breaking forces.
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Submitted 2 March, 2019;
originally announced March 2019.
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Acoustic Deformation Potentials of $n$-Type PbTe from First Principles
Authors:
Aoife R. Murphy,
Felipe Murphy-Armando,
Stephen Fahy,
Ivana Savic
Abstract:
We calculate the uniaxial and dilatation acoustic deformation potentials, $Ξ^{\text{L}}_{u}$ and $Ξ^{\text{L}}_{d}$, of the conduction band L valleys of PbTe from first principles, using the local density approximation (LDA) and hybrid functional (HSE03) exchange-correlation functionals. We find that the choice of a functional does not substantially affect the effective band masses and deformation…
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We calculate the uniaxial and dilatation acoustic deformation potentials, $Ξ^{\text{L}}_{u}$ and $Ξ^{\text{L}}_{d}$, of the conduction band L valleys of PbTe from first principles, using the local density approximation (LDA) and hybrid functional (HSE03) exchange-correlation functionals. We find that the choice of a functional does not substantially affect the effective band masses and deformation potentials as long as a physically correct representation of the conduction band states near the band gap has been obtained. Fitting of the electron-phonon matrix elements obtained in density functional perturbation theory (DFPT) with the LDA excluding spin orbit interaction (SOI) gives $Ξ^{\text{L}}_u = 7.0$~eV and $Ξ^{\text{L}}_d = 0.4$~eV. Computing the relative shifts of the L valleys induced by strain with the HSE03 functional including SOI gives $Ξ^{\text{L}}_u = 5.5$~eV and $Ξ^{\text{L}}_d = 0.8$~eV, in good agreement with the DFPT values. Our calculated values of $Ξ^{\text{L}}_u$ agree fairly well with experiment ($\sim 3-4.5$~eV). The computed values of $Ξ^{\text{L}}_d$ are substantially smaller than those obtained by fitting electronic transport measurements ($\sim 17-22$~eV), indicating that intravalley acoustic phonon scattering in PbTe is much weaker than previously thought.
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Submitted 16 November, 2018; v1 submitted 25 May, 2018;
originally announced May 2018.
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Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory
Authors:
Felipe Murphy-Armando,
Chang Liu,
Yi Zhao,
Ray Duffy
Abstract:
Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage current has been lacking. In this work we use experimental data and ab-initio calculations to refine existing models to account for the impact of strain on band-to-ba…
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Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade. Despite this, a systematic study of the impact of strain on off-state leakage current has been lacking. In this work we use experimental data and ab-initio calculations to refine existing models to account for the impact of strain on band-to-band tunnelling and trap-assisted tunnelling in silicon. We observe that the strain may dramatically increase the leakage current, depending on the type of tunnelling involved. For band-to-band and trap-assisted tunnelling, low uniaxial strains of 0.1% (or 180 MPa) can increase the leakage current by 60% and 10% compared to the unstrained case, respectively. Using our models, we predict that compressive strain on the order of 1% (or 2 GPa) can increase the leakage current by 150 times. Conversely, tensile strain may diminish or at most double the leakage current in all observed cases. Though detrimental in conventional inversion-mode MOSFETs, these processes may be used to boost the performance of Tunnel Field Effect Transistors, where on-state current is defined by band-to-band tunnelling.
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Submitted 27 November, 2019; v1 submitted 8 December, 2017;
originally announced December 2017.
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Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
Authors:
F. Murphy-Armando,
G. Fagas,
J. C. Greer
Abstract:
The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot b…
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The role of reduced dimensionality and of the surface on electron-phonon (e-ph) coupling in silicon nanowires is determined from first principles. Surface termination and chemistry is found to have a relatively small influence, whereas reduced dimensionality fundamentally alters the behavior of deformation potentials. As a consequence, electron coupling to "breathing modes" emerges that cannot be described by conventional treatments of e-ph coupling. The consequences for physical properties such as scattering lengths and mobilities are significant: the mobilities for [110] grown wires are 6 times larger than those for [100] wires, an effect that cannot be predicted without the form we find for Si nanowire deformation potentials.
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Submitted 3 February, 2010;
originally announced February 2010.
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Spin-orbit coupling and electron spin resonance for interacting electrons in carbon nanotubes
Authors:
A. De Martino,
R. Egger,
F. Murphy-Armando,
K. Hallberg
Abstract:
We review the theoretical description of spin-orbit scattering and electron spin resonance in carbon nanotubes. Particular emphasis is laid on the effects of electron-electron interactions. The spin-orbit coupling is derived, and the resulting ESR spectrum is analyzed both using the effective low-energy field theory and numerical studies of finite-size Hubbard chains and two-leg Hubbard ladders.…
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We review the theoretical description of spin-orbit scattering and electron spin resonance in carbon nanotubes. Particular emphasis is laid on the effects of electron-electron interactions. The spin-orbit coupling is derived, and the resulting ESR spectrum is analyzed both using the effective low-energy field theory and numerical studies of finite-size Hubbard chains and two-leg Hubbard ladders. For single-wall tubes, the field theoretical description predicts a double peak spectrum linked to the existence of spin-charge separation. The numerical analysis basically confirms this picture, but also predicts additional features in finite-size samples.
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Submitted 16 April, 2004; v1 submitted 16 May, 2003;
originally announced May 2003.
