Evaluating the local bandgap across InxGa1-xAs multiple quantum wells in a metamorphic laser via low-loss EELS
Authors:
Nicholas Stephen,
Ivan Pinto-Huguet,
Robert Lawrence,
Demie Kepaptsoglou,
Marc Botifoll,
Agnieszka Gocalinska,
Enrica Mura,
Quentin Ramasse,
Emanuele Pelucchi,
Jordi Arbiol,
Miryam Arredondo
Abstract:
Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1-xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure. Our findings reveal significant inhomogeneities, particularly near the interfaces, for both the in…
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Using high resolution scanning transmission electron microscopy and low-loss electron energy loss spectroscopy, we correlate the local bandgap (Eg), indium concentration, and strain distribution across multiple InxGa1-xAs quantum wells (QWs), on a GaAs substrate, within a metamorphic laser structure. Our findings reveal significant inhomogeneities, particularly near the interfaces, for both the indium and strain distribution, and subtle variations in the Eg across individual QWs. The interplay between strain, composition, and Eg was further explored by density functional theory simulations, indicating that variations in the Eg are predominantly influenced by the indium concentration, with strain playing a minor role. The observed local inhomogeneities suggest that differences between individual QWs may affect the collective emission and performance of the final device. This study highlights the importance of spatially resolved analysis in understanding and optimising the electronic and optical properties for designing of next-generation metamorphic lasers with multiple QWs as the active region.
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Submitted 1 November, 2024; v1 submitted 10 June, 2024;
originally announced June 2024.
Tuning InP self-assembled quantum structures to telecom wavelength: a versatile original InP(As) nanostructure "workshop"
Authors:
E. E. Mura,
A. Gocalinska,
G. Juska,
S. T. Moroni,
A. Pescaglini,
E. Pelucchi
Abstract:
The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data a…
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The influence of hydride exposure on previously unreported self-assembled InP(As) nanostructures is investigated, showing an unexpected morphological variability with growth parameters, and producing a large family of InP(As) nanostructures by metalorganic vapour phase epitaxy, from dome and ring-like structures to double dot in a ring ensembles. Moreover, preliminary microphotoluminescence data are indicating the capped rings system as an interesting candidate for single quantum emitters at telecom wavelengths, potentially becoming a possible alternative to InAs QDs for quantum technology and telecom applications.
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Submitted 21 March, 2017;
originally announced March 2017.
