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Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry
Authors:
Johannes Knörzer,
Cornelis J. van Diepen,
Tzu-Kan Hsiao,
Géza Giedke,
Uditendu Mukhopadhyay,
Christian Reichl,
Werner Wegscheider,
J. Ignacio Cirac,
Lieven M. K. Vandersypen
Abstract:
Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a c…
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Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry.
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Submitted 14 February, 2022;
originally announced February 2022.
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Quantum simulation of antiferromagnetic Heisenberg chain with gate-defined quantum dots
Authors:
C. J. van Diepen,
T. -K. Hsiao,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum system…
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Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers. To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required. Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array. We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met. Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian. Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlettriplet measurements on each nearest-neighbor pair and the correlations therein. The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays.
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Submitted 17 November, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
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Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
Authors:
Anastasios Pateras,
Joonkyu Park,
Youngjun Ahn,
Jack A. Tilka,
Martin V. Holt,
Christian Reichl,
Werner Wegscheider,
Timothy A. Baart,
Juan Pablo Dehollain,
Uditendu Mukhopadhyay,
Lieven M. K. Vandersypen,
Paul G. Evans
Abstract:
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic ele…
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Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.
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Submitted 25 February, 2020;
originally announced February 2020.
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Electron cascade for spin readout
Authors:
C. J. van Diepen,
T. -K. Hsiao,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge tran…
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Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation.
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Submitted 20 February, 2020;
originally announced February 2020.
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Efficient orthogonal control of tunnel couplings in a quantum dot array
Authors:
T. -K. Hsiao,
C. J. van Diepen,
U. Mukhopadhyay,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific…
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Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.
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Submitted 21 January, 2020;
originally announced January 2020.
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Ab Initio Exact Diagonalization Simulation of the Nagaoka Transition in Quantum Dots
Authors:
Yao Wang,
Juan Pablo Dehollain,
Fang Liu,
Uditendu Mukhopadhyay,
Mark S. Rudner,
Lieven M. K. Vandersypen,
Eugene Demler
Abstract:
Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few ele…
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Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few electrons in artificial potentials. We apply this approach to a quantum-dot system and study the magnetism of the correlated electrons, obtaining good agreement with recent experimental measurements. Through dot separation, potential detuning and control of single tunneling, we examine the Nagaoka transition and determine the robustness of the ferromagnetic state. While the standard Nagaoka theorem considers only a single-band Hubbard model, in this work we perform extensive $ab$ $intio$ calculations that include realistic multi-orbital conditions in which the level splitting is smaller than the interactions. This simulation complements the experiments and provides insight into the formation of ferromagnetism in correlated systems. More generally, our calculation sets the stage for further theoretical analysis of analog quantum simulators at a quantitative level.
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Submitted 21 October, 2019; v1 submitted 2 July, 2019;
originally announced July 2019.
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Nagaoka ferromagnetism observed in a quantum dot plaquette
Authors:
Juan P. Dehollain,
Uditendu Mukhopadhyay,
Vincent P. Michal,
Yao Wang,
Bernhard Wunsch,
Christian Reichl,
Werner Wegscheider,
Mark S. Rudner,
Eugene Demler,
Lieven M. K. Vandersypen
Abstract:
Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting o…
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Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting of a four-site square plaquette of quantum dots to demonstrate Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously studied theoretically but has remained unattainable in experiment. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any system before. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.
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Submitted 4 March, 2020; v1 submitted 11 April, 2019;
originally announced April 2019.
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Loading a quantum-dot based "Qubyte" register
Authors:
C. Volk,
A. M. J. Zwerver,
U. Mukhopadhyay,
P. T. Eendebak,
C. J. van Diepen,
J. P. Dehollain,
T. Hensgens,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots i…
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Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers.
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Submitted 2 January, 2019;
originally announced January 2019.
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Automated tuning of inter-dot tunnel couplings in quantum dot arrays
Authors:
C. J. van Diepen,
P. T. Eendebak,
B. T. Buijtendorp,
U. Mukhopadhyay,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of ini…
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Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in a linear array of gate-defined semiconductor quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
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Submitted 27 March, 2018;
originally announced March 2018.
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A 2x2 quantum dot array with controllable inter-dot tunnel couplings
Authors:
Uditendu Mukhopadhyay,
Juan Pablo Dehollain,
Christian Reichl,
Werner Wegscheider,
Lieven M. K. Vandersypen
Abstract:
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we p…
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The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$\times$2 quantum dots defined electrostatically in a AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range 0-40~$μ$eV. Finally, we demonstrate fast ($\sim 1$~$μ$s) single-shot readout of the spin state of electrons in the dots, through spin-to-charge conversion via Pauli spin blockade. These advances pave the way to analog quantum simulations in two dimensions, not previously accessible in quantum dot systems.
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Submitted 9 May, 2018; v1 submitted 15 February, 2018;
originally announced February 2018.
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A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
Authors:
T. Hensgens,
U. Mukhopadhyay,
P. Barthelemy,
S. Fallahi,
G. C. Gardner,
C. Reichl,
W. Wegscheider,
M. J. Manfra,
L. M. K. Vandersypen
Abstract:
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control…
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Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.
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Submitted 13 September, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Surface Optical and Bulk Acoustic Phonons in the Topological Insulator, Bi2Se2Te
Authors:
Uditendu Mukhopadhyay,
Dipanjan Chaudhuri,
Jit Sarkar,
Sourabh Singh,
Radha Krishna Gopal,
Sandeep Tammu,
Prashanth C. Upadhya,
Chiranjib Mitra
Abstract:
We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variat…
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We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variation in the frequency of the optical phonon modes was found with film thickness. This indicates that the optical phonons intrinsically belong to the surface of the topological insulators. The fact that the acoustic phonons can be tuned by changing the film thickness has tremendous potential for room temperature low power spintronic devices and in topological quantum computation.
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Submitted 10 June, 2015; v1 submitted 25 April, 2015;
originally announced April 2015.
