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Retinomorphic Machine Vision in a Network Laser
Authors:
Wai Kit Ng,
Jakub Dranczewski,
Anna Fischer,
T V Raziman,
Dhruv Saxena,
Tobias Farchy,
Kilian Stenning,
Jonathan Peters,
Heinz Schmid,
Will R Branford,
Mauricio Barahona,
Kirsten Moselund,
Riccardo Sapienza,
Jack C. Gartside
Abstract:
With the growing prevalence of AI, demand increases for efficient machine learning hardware. Physical systems are sought which combine image feature detection with the essential nonlinearity for tasks such as image classification. Existing physical hardware typically detects features linearly, then employs digital processing for nonlinear activation. Biological vision systems excel at nonlinear im…
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With the growing prevalence of AI, demand increases for efficient machine learning hardware. Physical systems are sought which combine image feature detection with the essential nonlinearity for tasks such as image classification. Existing physical hardware typically detects features linearly, then employs digital processing for nonlinear activation. Biological vision systems excel at nonlinear image processing. The retina detects features in ganglion cells via lateral inhibition, where cells nonlinearly compete for neuronal firing while supressing neighbouring cells.
We present a bio-inspired 'retinomorphic' machine vision platform using an on-chip semiconductor network laser. The system detects multiple features in parallel via spatially-overlapping lasing modes, with integrated nonlinearity provided by antagonistic gain competition between modes - a photonic analogue of retinal inhibition. Parallel feature-detection enhances efficiency relative to feature-detection schemes which operate sequentially or via multiple device copies, with Si-compatible processing and a compact micron-scale footprint relative to existing mm-scale systems. We report 98.05% accuracy on MNIST-digits and 87.85% on Fashion-MNIST, with strong performance on short training datasets.
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Submitted 2 August, 2024; v1 submitted 22 July, 2024;
originally announced July 2024.
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Hybrid III-V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths
Authors:
Svenja Mauthe,
Preksha Tiwari,
Markus Scherrer,
Daniele Caimi,
Marilyne Sousa,
Heinz Schmid,
Kirsten E. Moselund,
Noelia Vico Triviño
Abstract:
Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard silicon-on-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the centra…
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Photonic crystal (PhC) cavities are promising candidates for Si photonics integrated circuits due to their ultrahigh quality (Q)-factors and small mode volumes. Here, we demonstrate a novel concept of a one-dimensional hybrid III-V/Si PhC cavity which exploits a combination of standard silicon-on-insulator technology and active III-V materials. Using template-assisted selective epitaxy, the central part of a Si PhC lattice is locally replaced with III-V gain material. The III-V material is placed to overlap with the maximum of the cavity mode field profile, while keeping the major part of the PhC in Si. The selective epitaxy process enables growth parallel to the substrate and hence, in-plane integration with Si, and in-situ in-plane homo- and heterojunctions. The fabricated hybrid III-V/Si PhCs show emission over the entire telecommunication band from 1.2 μm to 1.6 μm at room temperature validating the device concept and its potential towards fully integrated light sources on silicon.
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Submitted 10 September, 2020;
originally announced September 2020.
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Wurtzite InP Microdisks: from Epitaxy to Room-Temperature Lasing
Authors:
Philipp Staudinger,
Svenja Mauthe,
Noelia Vico Triviño,
Steffen Reidt,
Kirsten E. Moselund,
Heinz Schmid
Abstract:
Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical appli…
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Metastable wurtzite crystal phases of semiconductors comprise enormous potential for high-performance electro-optical devices, owed to their extended tunable direct band gap range. However, synthesizing these materials in good quality and beyond nanowire size constraints has remained elusive. In this work, the epitaxy of wurtzite InP microdisks and related geometries on insulator for optical applications is explored. This is achieved by an elaborate combination of selective area growth of fins and a zipper-induced epitaxial lateral overgrowth, which enables co-integration of diversely shaped crystals at precise position. The grown material possesses high phase purity and excellent optical quality characterized by STEM and $μ$-PL. Optically pumped lasing at room temperature is achieved in microdisks with a lasing threshold of 365 $μJ/cm^2$, thus demonstrating promise for a wide range of photonic applications.
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Submitted 22 April, 2020;
originally announced April 2020.
