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Current self-oscillations, spikes and crossover between charge monopole and dipole waves in semiconductor superlattices
Authors:
David Sanchez,
Miguel Moscoso,
Luis L. Bonilla,
Gloria Platero,
Ramon Aguado
Abstract:
Self-sustained current oscillations in weakly-coupled superlattices are studied by means of a self-consistent microscopic model of sequential tunneling including boundary conditions naturally. Well-to-well hopping and recycling of charge monopole domain walls produce current spikes (high frequency modulation) superimposed on the oscillation. For highly doped injecting contacts, the self-oscillat…
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Self-sustained current oscillations in weakly-coupled superlattices are studied by means of a self-consistent microscopic model of sequential tunneling including boundary conditions naturally. Well-to-well hopping and recycling of charge monopole domain walls produce current spikes (high frequency modulation) superimposed on the oscillation. For highly doped injecting contacts, the self-oscillations are due to dynamics of monopoles. As the contact doping decreases, a lower-frequency oscillatory mode due to recycling and motion of charge dipoles is predicted. For low contact doping, this mode dominates and monopole oscillations disappear. At intermediate doping, both oscillation modes coexist as stable solutions and hysteresis between them is possible.
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Submitted 18 January, 1999;
originally announced January 1999.
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Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices
Authors:
J. Kastrup,
R. Hey,
K. H. Ploog,
H. T. Grahn,
L. L. Bonilla,
M. Kindelan,
M. Moscoso,
A. Wacker
Abstract:
Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain for…
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Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the doping density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low and high field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a new type of tunable GHz oscillator based on semiconductor superlattices.
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Submitted 23 July, 1997;
originally announced July 1997.
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Current-voltage characteristic and stability in resonant-tunneling n-doped semiconductor superlattices
Authors:
A. Wacker,
M. Moscoso,
M. Kindelan,
L. L. Bonilla
Abstract:
We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of supe…
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We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence, we can provide a simple analytical estimation for the doping density above which stable stable domains occur. This bound may be useful for the design of superlattices exhibiting self-sustained current oscillations. Furthermore we explain why stable domains occur in superlattices in contrast to the usual Gunn diode.
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Submitted 23 July, 1997;
originally announced July 1997.
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Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells
Authors:
Ramon Aguado,
Gloria Platero,
Miguel Moscoso,
Luis L. Bonilla
Abstract:
We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean field approximation. We analyze the current density through a double well and a superlattice and study the formation of…
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We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean field approximation. We analyze the current density through a double well and a superlattice and study the formation of electric field domains and multistability coming from the Coulomb interaction. Phase diagrams of parameter regions (bias, doping in the heterostructure and in the contacts,etc) where the different solutions exist are given.
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Submitted 13 March, 1997;
originally announced March 1997.
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Periodic generation and propagation of traveling fronts in dc voltage biased semiconductor superlattices
Authors:
Luis L. Bonilla,
Manuel Kindelan,
Miguel Moscoso,
Stephanos Venakides
Abstract:
The continuum limit of a recently-proposed model for charge transport in resonant-tunneling semiconductor superlattices is analyzed. It is described by a nonlinear hyperbolic integrodifferential equation on a one-dimensional spatial support, supplemented by shock and entropy conditions. For appropriate parameter values, a time-periodic solution is found in numerical simulations of the model. An…
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The continuum limit of a recently-proposed model for charge transport in resonant-tunneling semiconductor superlattices is analyzed. It is described by a nonlinear hyperbolic integrodifferential equation on a one-dimensional spatial support, supplemented by shock and entropy conditions. For appropriate parameter values, a time-periodic solution is found in numerical simulations of the model. An asymptotic theory shows that the time-periodic solution is due to recycling and motion of shock waves representing domain walls connecting regions of the superlattice where the electric field is almost uniform.
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Submitted 28 November, 1996;
originally announced November 1996.
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Current-voltage characteristic, stability, and self-sustained current oscillations in resonant-tunneling n-doped semiconductor superlattices
Authors:
L. L. Bonilla,
M. Kindelan,
M. Moscoso,
A. Wacker
Abstract:
We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence we determine the intervals of doping on which self-sustained current oscillations may appear under dc voltage bias. We have also studied the influen…
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We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence we determine the intervals of doping on which self-sustained current oscillations may appear under dc voltage bias. We have also studied the influence of doping, boundary condition and length of the superlattice on the self-sustained oscillations. Our study shows that there are bistability regions where either self-sustained current oscillations or steady states are reached depending on the initial condition. For a wide bias interval, the self-sustained oscillations are due to the formation, motion and recycling of electric-field domain walls inside the superlattice. There are biases (typically in the region of bistability) for which the strength of the high and low field domains changes periodically in time while the domain wall remains almost pinned on a few quantum wells.
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Submitted 11 April, 1996;
originally announced April 1996.
