Showing 1–4 of 4 results for author: Morozov, A P

Interplay Between Structural Defects and Charge Transport Dynamics in MA and FA Modified CsSnI3 Thin Film Semiconductors

Authors: Gleb V. Segal, Anna A. Zarudnyaya, Anton A. Vasilev, Andrey P. Morozov, Alexandra S. Ivanova, Lev O. Luchnikov, Sergey Yu. Yurchuk, Pavel A. Gostishchev, Danila S. Saranin

Abstract: Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device performance. Cation engineering of perovskite molecule was considered as an effective strategy to tailor the structural properties and suppress the degradation pr… ▽ More Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device performance. Cation engineering of perovskite molecule was considered as an effective strategy to tailor the structural properties and suppress the degradation processes. However, molecular engineering demands a thorough analysis of defect behavior, as it can influence ionic motion, recombination dynamics, and capacitive effects. The effective implementation of CsSnI3 in energy conversion devices requires careful consideration of the specific properties of thin films electrical conductivity, Seebeck coefficient, power factor, as well as electronic transients, and charge transport in the device structures. In this work, we performed a complex investigation for modified CsSnI3 through cation substitution with methyl ammonium (MA) and formamidinium (FA). Our findings highlight a complex interplay between electrical parameters of the bare thin films and stability of the devices (p-i-n diodes) after thermal stress. FA-CsSnI3 showed beneficial results for stabilization under elevated temperatures with improved non-ideality factor in diode structures, enhanced shunt properties and reduced trapping. The photo-induced voltage relaxation spectroscopy performed for MA-CsSnI3 showed relevant traps concentration of 1016 cm-3 with activation energy of 0.52 eV(210K) likely attributed to Sn atom defect. The obtained results are deeply analyzed and discussed. △ Less

Submitted 7 April, 2025; originally announced April 2025.

Modulation of Charge Transport and Rectification Behavior in CsSnI3 Thin Films Through A-site Cation Engineering

Authors: Anna A. Zarudnyaya, Gleb V. Segal, Andrey P. Morozov, Lev O. Luchnikov, Sergey Yu. Yurchuk, Ivan V. Schemerov, Pavel A. Gostishchev, Danila S. Saranin

Abstract: CsSnI3 perovskite is a promising thin-film semiconductor with high intrinsic conductivity for various device applications (thermoelectric, photovoltaics, etc.). Stoichiometric CsSnI3 owns high-density of defects and structural imperfections affecting device performance. In this work, we made an investigation on A-site cation engineering to evaluate the correlation between structural and transport… ▽ More CsSnI3 perovskite is a promising thin-film semiconductor with high intrinsic conductivity for various device applications (thermoelectric, photovoltaics, etc.). Stoichiometric CsSnI3 owns high-density of defects and structural imperfections affecting device performance. In this work, we made an investigation on A-site cation engineering to evaluate the correlation between structural and transport parameters for effective operation in rectifying devices. Here, we analyzed CsSnI3 thin films modified with methylamine (MA), formamidine(FA), guanidine(GuA) and 5-ammonium valeric acid (AVA) cations, correlating structural parameters obtained by Rietveld refinement with their optoelectronic and diode characteristics. MA-, FA-, and GuA-substituted films exhibited low sheet resistance (450-2200 Ohm per sq). However, strain-induced lattice distortions and accumulated defects in GuA-substituted films significantly hindered effective charge collection and increased recombination losses. AVA substitution formed low-conductivity 2D interlayers, dramatically increasing resistance (105 Ohm per sq) and altering transient response characteristics, yet provided minimal reverse-switching losses (100 uW per cm2), beneficial for high-frequency applications. FA substitution emerged as optimal, balancing structural stability, conductivity, minimal defects, and superior diode properties. The obtained results highlight that targeted lattice modifications strongly influence the practical performance of rectifying p-i-n diodes based on CsSnI3. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Double-side Integration of the Fluorinated Self-Assembling Monolayers for Enhanced Stability of Inverted Perovskite Solar Cells

Authors: Ekaterina A. Ilicheva, Polina K. Sukhorukova, Lev O. Luchnikov, Dmitry O. Balakirev, Nikita S. Saratovsky, Andrei P. Morozov, Pavel A. Gostishchev, S. Yu. Yurchuk, Anton A. Vasilev, Sergey S. Kozlov, Sergey I. Didenko, Svetlana M. Peregudova, Dmitry S. Muratov, Yuriy N. Luponosov, Danila S. Saranin

Abstract: Traps and structural defects at the hole and electron transport interfaces of the microcrystalline absorber limits the efficiency and long-term stability of perovskite solar cells (PSCs) due to accumulation of the ionic clusters, non-radiative recombination and electrochemical corrosion. Surface engineering using self-assembled monolayers (SAM) was considered as an effective strategy for modificat… ▽ More Traps and structural defects at the hole and electron transport interfaces of the microcrystalline absorber limits the efficiency and long-term stability of perovskite solar cells (PSCs) due to accumulation of the ionic clusters, non-radiative recombination and electrochemical corrosion. Surface engineering using self-assembled monolayers (SAM) was considered as an effective strategy for modification of charge-collection junctions. In this work, we demonstrate the first report about complex integration of a SAM for double-side passivation in p-i-n PSCs. Integrating the novel 5-(4-[bis(4-fluorophenyl)amino]phenyl)thiophene-2-carboxylic acid (FTPATC) as a fluorinated SAM at the hole-transport interface reduced potential barriers and lattice stresses in the absorber. At the electron-transport side, FTPATC interacted with the A-site cations of the perovskite molecule (Cs, formamidinium), inducing a dipole for defect compensation. Using the passivation approach with fluorinated SAM demonstrated benefits in the gain of the output performance up to 22.2%. The key-advantage of double-side passivation was confirmed by the enhanced stability under continuous light-soaking (1-sun equivalent, 65 C, ISOS-L-2), maintaining 88% of the initial performance over 1680 hours and thermal stabilization under harsh heating at 90 C. △ Less

Submitted 30 July, 2024; originally announced July 2024.

Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric

Authors: A. P. Morozov, L. O. Luchnikov, S. Yu. Yurchuk, A. R. Ishteev, P. A. Gostishchev, S. I. Didenko, N. S. Saratovsky, S. S. Kozlov, D. S. Muratov, Yu. N. Luponosov, D. S. Saranin

Abstract: Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and ele… ▽ More Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trapping processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures. △ Less

Submitted 3 July, 2024; originally announced July 2024.