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Pauli spin blockade at room temperature in double-quantum-dot tunneling transport through individual deep dopants in silicon
Authors:
Yoshisuke Ban,
Kimihiko Kato,
Shota Iizuka,
Hiroshi Oka,
Shigenori Murakami,
Koji Ishibashi,
Satoshi Moriyama,
Takahiro Mori,
Keiji Ono
Abstract:
Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits. The operating temperature of PSB is limited by that of the QDs and remains below 10 K, limiting wide application development. Herein, we confirm that a single deep…
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Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits. The operating temperature of PSB is limited by that of the QDs and remains below 10 K, limiting wide application development. Herein, we confirm that a single deep dopant in the channel of a silicon field effect transistor functions as a room-temperature QD; consequently, transport through two different deep dopants exhibits PSB up to room temperature. The characteristic magnetoconductance provides a means to identify PSB and enables the PSB device to function as a magnetic sensor with a sensitivity below geomagnetic field. Lifting in PSB caused by magnetic resonance (50 K) and Rabi oscillations (10 K) are also observed. Further development of this unique system may lead to room-temperature quantum technologies based on silicon technology.
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Submitted 16 January, 2025; v1 submitted 17 September, 2024;
originally announced September 2024.
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Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs
Authors:
Satoshi Moriyama,
Takahiro Mori,
Keiji Ono
Abstract:
We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-Stückelberg-Majorana interferometry with and without magnetic fields. Our experimental results revealed the coexistence of spin-conserving and spin-flip tunneling channels in the two-spin system in non-zero m…
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We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-Stückelberg-Majorana interferometry with and without magnetic fields. Our experimental results revealed the coexistence of spin-conserving and spin-flip tunneling channels in the two-spin system in non-zero magnetic fields. Additionally, we obtained the spin-conserving/spin-flip tunneling rates of the two-spin system through the double quantum dots in the TFET. These findings will improve our understanding of the two-spin system in silicon TFET qubits and may facilitate the coherent control of quantum states through all-electric manipulation.
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Submitted 6 November, 2023;
originally announced November 2023.
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Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit
Authors:
Yoshisuke Ban,
Kimihiko Kato,
Shota Iizuka,
Shigenori Murakami,
Koji Ishibashi,
Satoshi Moriyama,
Takahiro Mori,
Keiji Ono
Abstract:
To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy le…
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To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into Si wafers. Group II impurity Zn and group VI impurities S and Se, which are known to form deep levels, were introduced into the Si substrates by ion implantation. These samples were analyzed for concentration-depth profiles, energy level depths, and absence of defects. To introduce deep impurities into thin channels such as 50-nm-thick Si, we found impurity introduction conditions so that the concentration depth profiles have maximum value at less than 50 nm from the Si surface. Then, the formation of the deep levels and absence of defects were experimentally examined. By using the conditions to introduce deep impurities into Si wafer obtained from the experiments, single-electron transport at room temperature, high-temperature operation of qubit, and room-temperature quantum magnetic sensors are promising.
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Submitted 21 December, 2022; v1 submitted 28 October, 2022;
originally announced October 2022.
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Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields
Authors:
Takuya Iwasaki,
Motoi Kimata,
Yoshifumi Morita,
Shu Nakaharai,
Yutaka Wakayama,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi,
Satoshi Moriyama
Abstract:
Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth…
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Employing graphene as a template, we fabricate moiré superlattices by stacking bilayer or folded bilayer-bilayer graphene (BLG or fBBLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN or hBN/fBBLG/hBN stacks, with a small twist angle between the graphene and one of the two hBN layers. Because of the modulation due to the hBN, higher-generation Dirac points can emerge with a narrow bandwidth and van Hove singularities. In the moiré superlattice devices, we can therefore access the higher-generation Dirac points by in-situ gate tuning. This study is based on our previous paper (Appl. Phys. Express 13, 035003 (2020)). Here we show more extended data by applying high magnetic fields up to ~24 T. We also comment on the temperature dependence of the resistivity and magnetoresistance with reference to the 'plain' BLG data for a comparative study.
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Submitted 1 October, 2021;
originally announced October 2021.
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Direct growth of germanene at interfaces between van der Waals materials and Ag(111)
Authors:
Seiya Suzuki,
Takuya Iwasaki,
K. Kanishka H. De Silva,
Shigeru Suehara,
Kenji Watanabe,
Takashi Taniguchi,
Satoshi Moriyama,
Masamichi Yoshimura,
Takashi Aizawa,
Tomonobu Nakayama
Abstract:
Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire…
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Germanene, a two-dimensional honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h-BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N2 or H2/Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh-vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al2O3 cap layer resulted in no germanene formation. The present study also proved that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first-principles density functional theory calculations. The direct growth of h-BN-capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene-based electronic devices.
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Submitted 16 November, 2020;
originally announced November 2020.
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Analog of a quantum heat engine using a single-spin qubit
Authors:
K. Ono,
S. N. Shevchenko,
T. Mori,
S. Moriyama,
Franco Nori
Abstract:
A quantum two-level system with periodically modulated energy splitting could provide a minimal universal quantum heat machine. We present the experimental realization and the theoretical description of such a two-level system as an impurity electron spin in a silicon tunnel field-effect transistor. In the incoherent regime, the system can behave analogously to either an Otto heat engine or a refr…
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A quantum two-level system with periodically modulated energy splitting could provide a minimal universal quantum heat machine. We present the experimental realization and the theoretical description of such a two-level system as an impurity electron spin in a silicon tunnel field-effect transistor. In the incoherent regime, the system can behave analogously to either an Otto heat engine or a refrigerator. The coherent regime could be described as a superposition of those two regimes, producing specific interference fringes in the observed source-drain current.
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Submitted 14 September, 2020; v1 submitted 23 August, 2020;
originally announced August 2020.
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Single-Carrier Transport in Graphene/hBN Superlattices
Authors:
Takuya Iwasaki,
Shu Nakaharai,
Yutaka Wakayama,
Kenji Watanabe,
Takashi Taniguchi,
Yoshifumi Morita,
Satoshi Moriyama
Abstract:
Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices wou…
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Graphene/hexagonal boron nitride (hBN) moiré superlattices have attracted interest for use in the study of many-body effects and fractal physics in Dirac fermion systems. Many exotic transport properties have been intensively examined in such superlattices, but previous studies have not focused on single-carrier transport. The investigation of the single-carrier behavior in these superlattices would lead to an understanding of the transition of single-particle/correlated phenomena. Here, we show the single-carrier transport in a high-quality bilayer graphene/hBN superlattice-based quantum dot device. We demonstrate remarkable device controllability in the energy range near the charge neutrality point (CNP) and the hole-side satellite point. Under a perpendicular magnetic field, Coulomb oscillations disappear near the CNP, which could be a signature of the crossover between Coulomb blockade and quantum Hall regimes. Our results pave the way for exploring the relationship of single-electron transport and fractal quantum Hall effects with correlated phenomena in two-dimensional quantum materials.
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Submitted 11 March, 2020;
originally announced March 2020.
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Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
Authors:
Yosuke Sasama,
Taisuke Kageura,
Katsuyoshi Komatsu,
Satoshi Moriyama,
Jun-ichi Inoue,
Masataka Imura,
Kenji Watanabe,
Takashi Taniguchi,
Takashi Uchihashi,
Yamaguchi Takahide
Abstract:
Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In…
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Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed operation. We have recently fabricated diamond FETs with a hexagonal-boron-nitride gate dielectric and observed a high mobility above 300 cm$^{2}$V$^{-1}$s$^{-1}$. In this study, we examine which scattering mechanism limits the mobility of our FETs through theoretical calculations. Our calculations reveal that the dominant carrier scattering is caused by surface charged impurities with the density of $\approx$1$\times10^{12}$ cm$^{-2}$, and suggest a possible increase in mobility over 1000 cm$^{2}$V$^{-1}$s$^{-1}$ by reducing the impurities.
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Submitted 17 May, 2020; v1 submitted 31 January, 2020;
originally announced January 2020.
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Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
Authors:
Yosuke Sasama,
Katsuyoshi Komatsu,
Satoshi Moriyama,
Masataka Imura,
Shiori Sugiura,
Taichi Terashima,
Shinya Uji,
Kenji Watanabe,
Takashi Taniguchi,
Takashi Uchihashi,
Yamaguchi Takahide
Abstract:
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to…
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Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility of charge carriers allows us to observe quantum oscillations in both the longitudinal and Hall resistivities. The oscillations provide important information on the fundamental properties of the charge carriers, such as effective mass, lifetime, and dimensionality. Our results indicate the presence of a high-quality two-dimensional hole gas at the diamond surface and thus pave the way for studies of quantum transport in diamond and the development of low-loss and high-speed devices.
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Submitted 2 December, 2019; v1 submitted 31 July, 2019;
originally announced July 2019.
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Topological Valley Currents in Bilayer Graphene/Hexagonal Boron Nitride Superlattices
Authors:
Kosuke Endo,
Katsuyoshi Komatsu,
Takuya Iwasaki,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi,
Yutaka Noguchi,
Yutaka Wakayama,
Yoshifumi Morita,
Satoshi Moriyama
Abstract:
Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neut…
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Graphene superlattices have recently been attracting growing interest as an emergent class of quantum metamaterials. In this paper, we report the observation of nonlocal transport in bilayer graphene (BLG) superlattices encapsulated between two hexagonal boron nitride (hBN) layers, which formed hBN/BLG/hBN moiré superlattices. We then employed these superlattices to detect a long-range charge-neutral valley current using an all-electrical method. The moiré superlattice with broken inversion symmetry leads to a hot spot with Berry curvature accumulating at the charge neutral point (CNP), and it harbors satellites of the CNP. We observed nonlocal resistance on the order of 1 $\text{k}Ω$, which obeys a scaling relation. This nonlocal resistance evolves from the quantum Hall effect but without magnetic field/time-reversal symmetry breaking, which is associated with a hot-spot-induced topological valley current. This study should pave the way to developing a Berry-phase-sensitive probe to detect hot spots in gapped Dirac materials with inversion-symmetry breaking.
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Submitted 23 June, 2019; v1 submitted 2 March, 2019;
originally announced March 2019.
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Observation of superconductivity in bilayer graphene/hexagonal boron nitride superlattices
Authors:
Satoshi Moriyama,
Yoshifumi Morita,
Katsuyoshi Komatsu,
Kosuke Endo,
Takuya Iwasaki,
Shu Nakaharai,
Yutaka Noguchi,
Yutaka Wakayama,
Eiichiro Watanabe,
Daiju Tsuya,
Kenji Watanabe,
Takashi Taniguchi
Abstract:
A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in some recent SC discoveries at heterogeneous interfaces, SC was buried in bulk solids and ex situ. Genuine atomic-layer SC is difficult to access. Here we report a novel route to atomic-layer SC in graphene superlattices…
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A class of low-dimensional superconductivity (SC), such as most of "atomic-layer" SCs, has survived only under certain circumstances, implying a role of the substrate. Moreover, in some recent SC discoveries at heterogeneous interfaces, SC was buried in bulk solids and ex situ. Genuine atomic-layer SC is difficult to access. Here we report a novel route to atomic-layer SC in graphene superlattices. Our device comprises stacked non-twisted bilayer graphene (BLG) and hexagonal boron nitride (hBN), i.e., hBN/BLG/hBN Moiré superlattices. Upon in situ electrostatic doping, we observe an SC dome with a critical temperature up to $T_{\rm{BKT}} = 14 \rm{K}$, corresponding to the confinement of vortices. We believe that SC via doping Dirac materials is ubiquitous in condensed matter and that this study paves a way toward the design of a new SC family.
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Submitted 2 September, 2019; v1 submitted 27 January, 2019;
originally announced January 2019.
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Fabry-Pérot resonances and a crossover to the quantum Hall regime in ballistic graphene quantum point contacts
Authors:
Nurul Fariha Ahmad,
Katsuyoshi Komatsu,
Takuya Iwasaki,
Kenji Watanabe,
Takashi Taniguchi,
Hiroshi Mizuta,
Yutaka Wakayama,
Abdul Manaf Hashim,
Yoshifumi Morita,
Satoshi Moriyama,
Shu Nakaharai
Abstract:
We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the resistance exhibited Fabry-Pérot (FP) resonances due to np'n (pn'p) cavities formed by the top gate. In the quantum Hall (QH) regime with a high magnetic field, the…
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We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the resistance exhibited Fabry-Pérot (FP) resonances due to np'n (pn'p) cavities formed by the top gate. In the quantum Hall (QH) regime with a high magnetic field, the edge states governed the phenomena, presenting a unique condition where the edge channels of electrons and holes along a p-n junction acted as a solid-state analogue of a monochromatic light beam. We observed a crossover from the FP to QH regimes in ballistic graphene QPC under a magnetic field with varying temperatures. In particular, the collapse of the QH effect was elucidated as the magnetic field was decreased. Our high-mobility graphene device enabled observation of such quantum coherence effects up to several tens of kelvins. The presented device could serve as one of the key elements in future electronic quantum optic devices.
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Submitted 18 January, 2019;
originally announced January 2019.
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Quantum interferometry with a g-factor-tunable spin qubit
Authors:
K. Ono,
S. N. Shevchenko,
T. Mori,
S. Moriyama,
Franco Nori
Abstract:
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g-factors, with either rectangular, sinusoidal, or ramp radio-frequenc…
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We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g-factors, with either rectangular, sinusoidal, or ramp radio-frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry implemented in a silicon device and operated at a relatively high temperature.
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Submitted 22 April, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Observation of the quantum valley Hall state in ballistic graphene superlattices
Authors:
K. Komatsu,
Y. Morita,
E. Watanabe,
D. Tsuya,
K. Watanabe,
T. Taniguchi,
S. Moriyama
Abstract:
In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena has never been explored. Here, we report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant non-local resistances with a large valley Hall angle without a magnetic field. I…
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In graphene superlattices, bulk topological currents can lead to long-range charge-neutral flow and non-local resistance near Dirac points. A ballistic version of these phenomena has never been explored. Here, we report transport properties of ballistic graphene superlattices. This allows us to study and exploit giant non-local resistances with a large valley Hall angle without a magnetic field. In the low-temperature regime, a crossover occurs toward a new state of matter, referred to as a quantum valley Hall state (qVHS), which is an analog of the quantum Hall state without a magnetic field. Furthermore, a non-local resistance plateau, implying rigidity of the qVHS, emerges as a function of magnetic field, and the collapse of this plateau is observed, which is considered as a manifestation of valley/pseudospin magnetism.
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Submitted 29 May, 2018;
originally announced May 2018.
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High-temperature operation of a silicon qubit
Authors:
Keiji Ono,
Takahiro Mori,
Satoshi Moriyama
Abstract:
This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of S…
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This study alleviates the low operating temperature constraint of Si qubits. A qubit is a key element for quantum sensors, memories, and computers. Electron spin in Si is a promising qubit, as it allows both long coherence times and potential compatibility with current silicon technology. Si qubits have been implemented using gate-defined quantum dots or shallow impurities. However, operation of Si qubits has been restricted to milli-Kelvin temperatures, thus limiting the application of the quantum technology. In this study, we addressed a single deep impurity, having strong electron confinement of up to 0.3 eV, using single-electron tunnelling transport. We also achieved qubit operation at 5-10 K through a spin-blockade effect based on the tunnelling transport via two impurities. The deep impurity was implemented by tunnel field-effect transistors (TFETs) instead of conventional FETs. With further improvement in fabrication and controllability, this work presents the possibility of operating silicon spin qubits at elevated temperatures.
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Submitted 8 November, 2018; v1 submitted 10 April, 2018;
originally announced April 2018.
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Field-induced Confined States in Graphene
Authors:
S. Moriyama,
Y. Morita,
E. Watanabe,
D. Tsuya
Abstract:
We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement tra…
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We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement transition is switched by the magnetic field.
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Submitted 12 November, 2013; v1 submitted 21 June, 2012;
originally announced June 2012.
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Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
Authors:
Hikari Tomori,
Akinobu Kanda,
Hidenori Goto,
Youiti Ootuka,
Kazuhito Tsukagoshi,
Satoshi Moriyama,
Eiichiro Watanabe,
Daiju Tsuya
Abstract:
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman…
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A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.
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Submitted 8 June, 2011;
originally announced June 2011.
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Spin effects in single-electron transport through carbon nanotube quantum dots
Authors:
Satoshi Moriyama,
Tomoko Fuse,
Tomohiro Yamaguchi,
Koji Ishibashi
Abstract:
We investigate the total spin in an individual single-wall carbon nanotube quantum dot with various numbers of electrons in a shell by using the ratio of the saturation currents of the first steps of Coulomb staircases for positive and negative biases. The current ratio reflects the total-spin transition that is increased or decreased when the dot is connected to strongly asymmetric tunnel barri…
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We investigate the total spin in an individual single-wall carbon nanotube quantum dot with various numbers of electrons in a shell by using the ratio of the saturation currents of the first steps of Coulomb staircases for positive and negative biases. The current ratio reflects the total-spin transition that is increased or decreased when the dot is connected to strongly asymmetric tunnel barriers. Our results indicate that total spin states with and without magnetic fields can be traced by this method.
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Submitted 3 July, 2007; v1 submitted 26 April, 2007;
originally announced April 2007.
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Four-electron shell structures and an interacting two-electron system in carbon nanotube quantum dots
Authors:
S. Moriyama,
T. Fuse,
M. Suzuki,
Y. Aoyagi,
K. Ishibashi
Abstract:
Low-temperature transport measurements have been carried out on single-wall carbon nanotube quantum dots in a weakly coupled regime in magnetic fields up to 8 Tesla. Four-electron shell filling was observed, and the magnetic field evolution of each Coulomb peak was investigated, in which magnetic field induced spin flip and resulting spin polarization were observed. Excitation spectroscopy measu…
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Low-temperature transport measurements have been carried out on single-wall carbon nanotube quantum dots in a weakly coupled regime in magnetic fields up to 8 Tesla. Four-electron shell filling was observed, and the magnetic field evolution of each Coulomb peak was investigated, in which magnetic field induced spin flip and resulting spin polarization were observed. Excitation spectroscopy measurements have revealed Zeeman splitting of single particle states for one electron in the shell, and demonstrated singlet and triplet states with direct observation of the exchange splitting at zero-magnetic field for two electrons in the shell, the simplest example of the Hund's rule. The latter indicates the direct analogy to an artificial He atom.
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Submitted 7 February, 2005; v1 submitted 10 November, 2004;
originally announced November 2004.
