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Showing 1–5 of 5 results for author: Morioka, N

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  1. arXiv:2411.10978  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Emergence of giant spin-orbit torque in a two-dimensional hole gas on the hydrogen-terminated diamond surface

    Authors: Fujio Sako, Ryo Ohshima, Yuichiro Ando, Naoya Morioka, Hiroyuki Kawashima, Riku Kawase, Norikazu Mizuochi, Hans Huebl, Masashi Shiraishi

    Abstract: Two-dimensional (2D) carrier systems exhibit various significant physical phenomena for electronics and spintronics, where one of the most promising traits is efficient spin-to-charge conversion stemming from their Rashba-type spin-orbit interaction. Meanwhile, a nuisance in quests of promising materials for spintronics application is that vast majority of the investigated platforms consists of ra… ▽ More

    Submitted 17 November, 2024; originally announced November 2024.

    Comments: 19pages, 4figures

    Journal ref: Physical Review B (Letter) 2024

  2. arXiv:2001.02459  [pdf, ps, other

    quant-ph cond-mat.mtrl-sci physics.atom-ph

    Vibronic states and their effect on the temperature and strain dependence of silicon-vacancy qubits in 4H silicon carbide

    Authors: Péter Udvarhelyi, Gergő Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, Adam Gali

    Abstract: Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H SiC. We apply density functional theory beyond the Born-Oppenheimer approximation to describe the t… ▽ More

    Submitted 18 April, 2020; v1 submitted 8 January, 2020; originally announced January 2020.

    Comments: 8 pages, 5 figures

    Journal ref: Phys. Rev. Applied 13, 054017 (2020)

  3. arXiv:1906.05964  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

    Electrical charge state manipulation of single silicon vacancies in a silicon carbide quantum optoelectronic device

    Authors: Matthias Widmann, Matthias Niethammer, Dmitry Yu. Fedyanin, Igor A. Khramtsov, Torsten Rendler, Ian D. Booker, Jawad Ul Hassan, Naoya Morioka, Yu-Chen Chen, Ivan G. Ivanov, Nguyen Tien Son, Takeshi Ohshima, Michel Bockstedte, Adam Gali, Cristian Bonato, Sang-Yun Lee, Jörg Wrachtrup

    Abstract: Colour centres with long-lived spins are established platforms for quantum sensing and quantum information applications. Colour centres exist in different charge states, each of them with distinct optical and spin properties. Application to quantum technology requires the capability to access and stabilize charge states for each specific task. Here, we investigate charge state manipulation of indi… ▽ More

    Submitted 23 June, 2019; v1 submitted 13 June, 2019; originally announced June 2019.

  4. arXiv:1903.12236  [pdf, other

    cond-mat.mes-hall physics.app-ph quant-ph

    Coherent electrical readout of defect spins in 4H-SiC by photo-ionization at ambient conditions

    Authors: Matthias Niethammer, Matthias Widmann, Torsten Rendler, Naoya Morioka, Yu-Chen Chen, Rainer Stöhr, Jawad Ul Hassan, Shinobu Onoda, Takeshi Ohshima, Sang-Yun Lee, Amlan Mukherjee, Junichi Isoya, Nguyen Tien Son, Jörg Wrachtrup

    Abstract: Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for such defect spins rely on fluorescence detection and are limite… ▽ More

    Submitted 28 March, 2019; originally announced March 2019.

    Journal ref: Nature Communications vol 10, 5569 (2019)

  5. arXiv:1812.04284  [pdf

    cond-mat.mes-hall physics.app-ph quant-ph

    Laser writing of scalable single colour centre in silicon carbide

    Authors: Yu-Chen Chen, Patrick S. Salter, Matthias Niethammer, Matthias Widmann, Florian Kaiser, Roland Nagy, Naoya Morioka, Charles Babin, J ürgen Erlekampf, Patrick Berwian, Martin Booth, J örg Wrachtrup

    Abstract: Single photon emitters in silicon carbide (SiC) are attracting attention as quantum photonic systems. However, to achieve scalable devices it is essential to generate single photon emitters at desired locations on demand. Here we report the controlled creation of single silicon vacancy ($V_{Si}$) centres in 4H-SiC using laser writing without any post-annealing process. Due to the aberration correc… ▽ More

    Submitted 11 December, 2018; originally announced December 2018.