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Graphene whisperitronics: transducing whispering gallery modes into electronic transport
Authors:
Boris Brun,
Viet-Hung Nguyen,
Nicolas Moreau,
Sowmya Somanchi,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of t…
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When confined in circular cavities, graphene relativistic charge carriers occupy whispering gallery modes (WGM) in analogy to classical acoustic and optical fields. The rich geometrical patterns of the WGM decorating the local density of states offer promising perspectives to devise new disruptive quantum devices. However, exploiting these highly sensitive resonances requires the transduction of the WGMs to the outside world through source and drain electrodes, a yet unreported configuration. Here we create a circular p-n island in a graphene device using a polarized scanning gate microscope tip, and probe the resulting WGMs signatures in in-plane electronic transport through the p-n island. Combining tight-binding simulations and exact solution of the Dirac equation, we assign the measured device conductance features to WGMs, and demonstrate mode selectivity by displacing the p-n island with respect to a constriction. This work therefore constitutes a proof of concept for graphene whisperitronics devices.
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Submitted 14 December, 2021;
originally announced December 2021.
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Quantum Hall nano-interferometer in graphene
Authors:
N. Moreau,
B. Brun,
S. Somanchi,
K. Watanabe,
T. Taniguchi,
C. Stampfer,
B. Hackens
Abstract:
Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graph…
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Quantum Hall edge states offer avenues for quasiparticle interferometry, provided that the ratio between phase coherence length and quantum Hall interferometer (QHI) size is large enough. Maximizing this ratio by shrinking the QHI area favors Coulomb interactions, impairing clear interferences observation. Here, we use scanning gate spectroscopy to probe interference regime in antidots-based graphene nano-QHIs, free of localized states (LS). A simple Fabry-Perot model, without Coulomb interaction, reproduces the QHI phenomenology, even in the smallest QHI, highlighting the LS detrimental role.
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Submitted 15 October, 2021;
originally announced October 2021.
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Revisiting Coulomb diamond signatures in quantum Hall interferometers
Authors:
N. Moreau,
S. Faniel,
F. Martins,
L. Desplanque,
X. Wallart,
S. Melinte,
V. Bayot,
B. Hackens
Abstract:
Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning…
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Coulomb diamonds are the archetypal signatures of Coulomb blockade, a well-known charging effect mainly observed in nanometer-sized "electronic islands" tunnel-coupled with charge reservoirs. Here, we identify apparent Coulomb diamond features in the scanning gate spectroscopy of a quantum point contact carved out of a semiconductor heterostructure, in the quantum Hall regime. Varying the scanning gate parameters and the magnetic field, the diamonds are found to smoothly evolve to checkerboard patterns. To explain this surprising behavior, we put forward a model which relies on the presence of a nanometer-sized Fabry-Pérot quantum Hall interferometer at the center of the constriction with tunable tunneling paths coupling the central part of the interferometer to the quantum Hall channels running along the device edges. Both types of signatures, diamonds and checkerboards, and the observed transition, are reproduced by simply varying the interferometer size and the transmission probabilities at the tunneling paths. The new proposed interpretation of diamond phenomenology will likely lead to revisit previous data, and opens the way towards engineering more complex interferometric devices with nanoscale dimensions.
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Submitted 15 October, 2021;
originally announced October 2021.
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Contacts and upstream modes explain the electron-hole asymmetry in the graphene quantum Hall regime
Authors:
Nicolas Moreau,
Boris Brun,
Sowmya Somanchi,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Benoît Hackens
Abstract:
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity…
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Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.
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Submitted 18 March, 2021;
originally announced March 2021.
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Upstream modes and antidots poison graphene quantum Hall effect
Authors:
Nicolas Moreau,
Boris Brun,
Sowmya Somanchi,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Benoit Hackens
Abstract:
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regretta…
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The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antidots along the graphene edges, mediating backscattering towards upstream edge channels, hence triggering topological breakdown. Combined with simulations, our experimental results provide further insights into graphene quantum Hall channels vulnerability. In turn, this may ease future developments towards precise manipulation of topologically protected edge channels hosted in various types of two-dimensional crystals.
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Submitted 19 April, 2021; v1 submitted 23 October, 2020;
originally announced October 2020.
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Optimizing Dirac fermions quasi-confinement by potential smoothness engineering
Authors:
Boris Brun,
Nicolas Moreau,
Sowmya Somanchi,
Viet-Hung Nguyen,
Alina Mreńca-Kolasińska,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junct…
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With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p-n junction smoothness, a parameter difficult to tune in conventional devices. Here we create p-n junctions in graphene, using the polarized tip of a scanning gate microscope, yielding Fabry-Pérot interference fringes in the device resistance. We control the p-n junctions smoothness using the tip-to-graphene distance, and show increased interference contrast using smoother potential barriers. Extensive tight-binding simulation reveal that smooth potential barriers induce a pronounced quasi-confinement of Dirac fermions below the tip, yielding enhanced interference contrast. On the opposite, sharp barriers are excellent Dirac fermions transmitters and lead to poorly contrasted interferences. Our work emphasizes the importance of junction smoothness for relativistic electron optics devices engineering.
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Submitted 27 November, 2019;
originally announced November 2019.
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Imaging Dirac fermions flow through a circular Veselago lens
Authors:
Boris Brun,
Nicolas Moreau,
Sowmya Somanchi,
Viet-Hung Nguyen,
Kenji Watanabe,
Takashi Taniguchi,
Jean-Christophe Charlier,
Christoph Stampfer,
Benoit Hackens
Abstract:
Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Her…
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Graphene charge carriers behave as relativistic massless fermions, thereby exhibiting a variety of counter-intuitive behaviors. In particular, at p-n junctions, they behave as photons encountering a negative index media, therefore experiencing a peculiar refraction known as Veselago lensing. However, the way Dirac fermions flow through a Veselago lens remains largely unexplored experimentally. Here, a novel approach to create a movable and tunable circular p-n junction in graphene is proposed, using the polarized tip of a scanning gate microscope. Scanning the tip in the vicinity of a graphene constriction while recording the device conductance yields images related to the electron flow through a circular Veselago lens, revealing a high current density in the lens core, as well as two low current density zones along transport axis. Tight-binding simulations reveal the crucial role of the p-n junction smoothness on these phenomena. The present research adds new dimensions in the control and understanding of Dirac fermions optical elements, a prerequisite to engineer relativistic electron optics devices.
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Submitted 19 June, 2019; v1 submitted 7 November, 2018;
originally announced November 2018.
