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Spatially-Controlled Planar Czochralski Growth of Low-Loss Phase Change Materials for Programmable Photonics
Authors:
Fouad Bentata,
Arnaud Taute,
Capucine Laprais,
Régis Orobtchouk,
Eva Kempf,
Alban Gassenq,
Yves Pipon,
Michele Calvo,
Stéphane Monfray,
Guillaume Saint-Girons,
Nicolas Baboux,
Hai Son Nguyen,
Xavier Letartre,
Lotfi Berguiga,
Patrice Genevet,
Sébastien Cueff
Abstract:
Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, we propose the concept o…
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Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase-change materials (PCMs) for non-volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, we propose the concept of spatially-controlled planar Czochralski growth, a novel method for programming the quasi-monocrystalline growth of low-loss Sb2S3 PCM, leveraging the seeded directional and progressive crystallization within confined channels. This guided crystallization method is experimentally shown to circumvent the current limitations of conventional PCM-based nanophotonic devices, including a multilevel non-volatile optical phase-shifter exploiting a silicon nitride-based Mach-Zehnder interferometer, and a programmable metasurface with spectrally reconfigurable bound state in the continuum. Precisely controlling the growth of PCMs to ensure uniform crystalline properties across large areas is the cornerstone for the industrial development of non-volatile reconfigurable photonic integrated circuits.
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Submitted 23 April, 2025;
originally announced April 2025.
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Single-Crystal Silicon Thermoelectrics by Phonon Engineering
Authors:
Thierno-Moussa Bah,
Stanislav Didenko,
Di Zhou,
Tianqi Zhu,
Hafsa Ikzibane,
Stephane Monfray,
Thomas Skotnicki,
Emmanuel Dubois,
Jean-François Robillard
Abstract:
Herein, we report the use of nanostructured crystalline Si as a thermoelectric material and its integration into thermoelectric harvesters. The proof-of-concept relies on the partial suppression of lattice thermal transport by introducing pores with dimensions scaling between the electron mean free path and the phonon mean free path. In other words, we artificially aimed at the electron crystal ph…
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Herein, we report the use of nanostructured crystalline Si as a thermoelectric material and its integration into thermoelectric harvesters. The proof-of-concept relies on the partial suppression of lattice thermal transport by introducing pores with dimensions scaling between the electron mean free path and the phonon mean free path. In other words, we artificially aimed at the electron crystal phonon glass tradeoff targeted for thermoelectric efficiency. The devices were fabricated using CMOS compatible processes and exhibited power generation from a few microWatts per cm^2 to a few milliWatts per cm^2 under temperature differences from a few K to 200 K across the thermopiles. These numbers demonstrate the capability to power autonomous devices with environmental or body heat using silicon chips with areas below cm^2. This paper also reports the possibility of using the developed demonstrators for integrated thermoelectric cooling.
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Submitted 1 July, 2022;
originally announced July 2022.
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Low work function thin film growth for high efficiency thermionic energy converter: Coupled Kelvin probe and photoemission study of potassium oxide
Authors:
François Morini,
Emmanuel Dubois,
Jean-François Robillard,
Stéphane Monfray,
Thomas Skotnicki
Abstract:
Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function electrodes. From room temperature and above, this kind of converter could supply low power devices such as autonomous sensor networks. In this type of thermoelectric converters, current injection is mainly governed by a mechanism of thermionic emi…
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Recent researches in thermal energy harvesting have revealed the remarkable efficiency of thermionic energy converters comprising very low work function electrodes. From room temperature and above, this kind of converter could supply low power devices such as autonomous sensor networks. In this type of thermoelectric converters, current injection is mainly governed by a mechanism of thermionic emission at the hot electrode which explains the interest for low work function coating materials. In particular, alkali metal oxides have been identified as excellent candidates for coating converter electrodes. This paper is devoted to the synthesis and characterization of potassium peroxide K2O2 onto silicon surfaces. To determine optimal synthesis conditions of K2O2, we present diagrams showing the different oxides as a function of temperature and oxygen pressure from which phase stability characteristics can be determined. From the experimental standpoint, we present results on the synthesis of potassium oxide under ultra high vacuum and controlled temperature. The resulting surface is characterized in situ by means of photoemission spectroscopy (PES) and contact potential difference (CPD) measurements. A work function of 1.35 eV is measured which and the expected efficiency of the corresponding converter is discussed. It is generally assumed that the decrease of the work function in the alkali/oxygen/ silicon system, is attributed to the creation of a surface dipole resulting from a charge transfer between the alkali metal and oxygen.
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Submitted 11 October, 2019;
originally announced October 2019.
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Thermoelectric Energy Conversion: How Good Can Silicon Be?
Authors:
M. Haras,
V. Lacatena,
F. Morini,
J. -F. Robillard,
S. Monfray,
T. Skotnicki,
E. Dubois
Abstract:
Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7W/cm2 at deltaT=30K is modeled based on a thin-film lateral architecture of thermo-conv…
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Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested power density of 7W/cm2 at deltaT=30K is modeled based on a thin-film lateral architecture of thermo-converter that takes advantage of confinement effects to reduce the thermal conductivity. The simulation leads to the conclusion that 10nm thick Silicon has 10 times higher efficiency than bulk.
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Submitted 20 May, 2016;
originally announced May 2016.
