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Small gap semiconducting organic charge-transfer interfaces
Authors:
M. Nakano,
H. Alves,
A. S. Molinari,
S. Ono,
N. Minder,
A. F. Morpurgo
Abstract:
We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have un-measurably high resistance, the interface exhibits a resistivity of few tens of MegaOhm with a temperature dependence characteristic of a small…
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We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene (TMTSF) and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have un-measurably high resistance, the interface exhibits a resistivity of few tens of MegaOhm with a temperature dependence characteristic of a small gap semiconductor. We analyze the transport properties based on a simple band-diagram that naturally accounts for our observations in terms of charge transfer between two crystals. Together with the recently discovered tetrathiafulvalene (TTF)-TCNQ interfaces, these results indicate that single-crystal organic heterostructures create new electronic systems with properties relevant to both fundamental and applied fields.
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Submitted 22 April, 2010;
originally announced April 2010.
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High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors
Authors:
Anna S. Molinari,
Helena Alves,
Zhihua Chen,
Antonio Facchetti,
Alberto F. Morpurgo
Abstract:
We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO$_{2}$), to reduce the possibility of electron trapping by hydroxyl groups present…
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We have investigated the electron mobility on field-effect transistors based on PDIF-CN$_{2}$ single crystals. The family of the small molecules PDI8-CN$_{2}$ has been chosen for the promising results obtained for vapour-deposited thin film FETs. We used as gate dielectric a layer of PMMA (spinned on top of the SiO$_{2}$), to reduce the possibility of electron trapping by hydroxyl groups present at surface of the oxide. For these devices we obtained a room temperature mobility of 6 cm$^{2}$/Vs in vacuum and 3 cm$^{2}$/Vs in air. Our measurements demonstrate the possibility to obtain n-type OFETs with performances comparable to those of p-type devices.
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Submitted 5 February, 2009;
originally announced February 2009.
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Metallic conduction at organic charge-transfer interfaces
Authors:
H. Dias Alves,
A. S. Molinari,
H. Xie,
A. F. Morpurgo
Abstract:
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces formed by insulating transition metal oxides. Here we investigate interfaces between crystals of conjugated organic molecules, which are large gap undoped se…
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The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces formed by insulating transition metal oxides. Here we investigate interfaces between crystals of conjugated organic molecules, which are large gap undoped semiconductors, i.e. essentially insulators. We find that highly conducting interfaces can be realized with resistivity ranging from 1 to 30 kOhm square, and that, for the best samples, the temperature dependence of the conductivity is metallic. The observed electrical conduction originates from a large transfer of charge between the two crystals that takes place at the interface, on a molecular scale. As the interface assembly process is simple and can be applied to crystals of virtually any conjugated molecule, the conducting interfaces described here represent the first examples of a new class of electronic systems.
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Submitted 2 October, 2008;
originally announced October 2008.
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Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces
Authors:
A. S. Molinari,
I. Gutierrez Lezama,
P. Parisse,
T. Takenobu,
Y. Iwasa,
A. F. Morpurgo
Abstract:
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emph…
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Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.
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Submitted 15 February, 2008;
originally announced February 2008.
