Showing 1–50 of 205 results for author: Molenkamp, L

Phase-dependent supercurrent and microwave dissipation of HgTe quantum well Josephson junctions

Authors: Wei Liu, Stanislau U. Piatrusha, Lena Fürst, Lukas Lunczer, Tatiana Borzenko, Martin P. Stehno, Laurens W. Molenkamp

Abstract: We measured the microwave response of a HgTe quantum well Josephson junction embedded into an RF SQUID loop which is inductively coupled to a superconducting resonator. The side-contacted devices studied here operate in bulk transport mode, with a separation between the superconducting contacts smaller than both the estimated carrier mean free path and superconducting coherence length. We extract… ▽ More We measured the microwave response of a HgTe quantum well Josephson junction embedded into an RF SQUID loop which is inductively coupled to a superconducting resonator. The side-contacted devices studied here operate in bulk transport mode, with a separation between the superconducting contacts smaller than both the estimated carrier mean free path and superconducting coherence length. We extract the current-phase relation and the phase-dependent microwave dissipation, that, at low temperature, primarily is related to photon-induced transitions between the Andreev bound states. We study the effects of gate voltage and temperature on our devices and compare the measurements with a tight-binding model based on the Bogoliubov-de Gennes equations. A combined analysis of both microwave admittance components allows us to confirm the presence of a small gap in the Andreev bound state spectrum at phase $π$, indicating high interface transparency, matching our observations in DC measurements of a similar device. Our work demonstrates the versatility of microwave measurements as a tool for Josephson junction characterization and highlights the importance of the interface properties for side-contacted Josephson devices. △ Less

Submitted 23 December, 2024; originally announced December 2024.

Comments: Main text: 16 pages, 11 figures, Supplemental Material: 15 pages, 13 figures

Journal ref: Phys. Rev. B 111 (2025) 104503

Zero external magnetic field quantum standard of resistance at the 10-9 level

Authors: D. K. Patel, K. M. Fijalkowski, M. Kruskopf, N. Liu, M. Götz, E. Pesel, M. Jaime, M. Klement, S. Schreyeck, K. Brunner, C. Gould, L. W. Molenkamp, H. Scherer

Abstract: The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We… ▽ More The quantum anomalous Hall effect holds promise as a disruptive innovation in condensed matter physics and metrology, as it gives access to Hall resistance quantization in terms of the von-Klitzing constant RK = h/e2 at zero external magnetic field. In this work, we study the accuracy of Hall resistance quantization in a device based on the magnetic topological insulator material (V,Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 +/- 8.7) nohm/ohm when extrapolated to zero measurement current, and (8.6 +/- 6.7) nohm/ohm when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1), which sets a new benchmark for the quantization accuracy in topological matter. This precision and accuracy at the nohm/ohm level (or 10-9 of relative uncertainty) achieve the thresholds for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance - an important step towards the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference. △ Less

Submitted 22 January, 2025; v1 submitted 17 October, 2024; originally announced October 2024.

Comments: 12 pages (incl. 8 pages main text and 4 pages supplementary information), with 6 figures and 2 tables

Journal ref: Nature Electronics 7, 1111-1116 (2024)

Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction

Authors: Wei Liu, Stanislau U. Piatrusha, Xianhu Liang, Sandeep Upadhyay, Lena Fürst, Charles Gould, Johannes Kleinlein, Hartmut Buhmann, Martin P. Stehno, Laurens W. Molenkamp

Abstract: The fractional AC Josephson effect is a discerning property of topological superconductivity in hybrid Josephson junctions. Recent experimental observations of missing odd Shapiro steps and half Josephson frequency emission in various materials have sparked significant debate regarding their potential origin in the effect. In this study, we present microwave emission measurements on a resistively… ▽ More The fractional AC Josephson effect is a discerning property of topological superconductivity in hybrid Josephson junctions. Recent experimental observations of missing odd Shapiro steps and half Josephson frequency emission in various materials have sparked significant debate regarding their potential origin in the effect. In this study, we present microwave emission measurements on a resistively shunted Josephson junction based on a HgTe quantum well. We demonstrate that, with significant spurious inductance in the shunt wiring, the experiment operates in a nonlinear dynamic regime characterized by period-doubling. This leads to additional microwave emission peaks at half of the Josephson frequency, $f_J/2$, which can mimic the $4π$-periodicity of topological Andreev states. The observed current-voltage characteristics and emission spectra are well-described by a simple RCLSJ model. Furthermore, we show that the nonlinear dynamics of the junction can be controlled using gate voltage, magnetic field, and temperature, with our model accurately reproducing these effects without incorporating any topological attributes. Our observations urge caution in interpreting emission at $f_J/2$ as evidence for gapless Andreev bound states in topological junctions and suggest the appropriate parameter range for future experiments. △ Less

Submitted 12 August, 2024; originally announced August 2024.

Comments: 13 pages, 8 figures

Journal ref: Nat Commun 16, 3068 (2025)

kdotpy: $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice for simulating semiconductor band structures

Authors: Wouter Beugeling, Florian Bayer, Christian Berger, Jan Böttcher, Leonid Bovkun, Christopher Fuchs, Maximilian Hofer, Saquib Shamim, Moritz Siebert, Li-Xian Wang, Ewelina M. Hankiewicz, Tobias Kießling, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice. The application implements the widely used Kane model, capable of reliable predictions of transport and optical properties for a large variety of topological and non-topological materials with a zincblende crystal structu… ▽ More The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with $\mathbf{k}\cdot\mathbf{p}$ theory on a lattice. The application implements the widely used Kane model, capable of reliable predictions of transport and optical properties for a large variety of topological and non-topological materials with a zincblende crystal structure. The application automates the tedious steps of simulating band structures. The user inputs the relevant physical parameters on the command line, for example materials and dimensions of the device, magnetic field, and temperature. The program constructs the appropriate matrix Hamiltonian on a discretized lattice of spatial coordinates and diagonalizes it. The physical observables are extracted from the eigenvalues and eigenvectors and saved as output. The program is highly customizable with a large set of configuration options and material parameters. △ Less

Submitted 17 July, 2024; originally announced July 2024.

Comments: 143 pages, submission to SciPost Physics Codebases

Journal ref: SciPost Phys. Codebases 47 (2025)

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Coexistence of Antiferromagnetic Cubic and Ferromagnetic Tetragonal Polymorphs in Epitaxial CuMnSb

Authors: Anna Ciechan, Piotr Dluzewski, Slawomir Kret, Katarzyna Gas, Lukas Scheffler, Charles Gould, Johannes Kleinlein, Maciej Sawicki, Laurens Molenkamp, Piotr Boguslawski

Abstract: High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its… ▽ More High-resolution transmission electron microscopy and superconducting quantum interference device magnetometry shows that epitaxial CuMnSb films exhibit a coexistence of two magnetic phases, coherently intertwined in nanometric scales. The dominant $α$~phase is half-Heusler cubic antiferromagnet with the Néel temperature of 62~K, the equilibrium structure of bulk CuMnSb. The secondary phase is its ferromagnetic tetragonal $β$ polymorph with the Curie temperature of about 100~K. First principles calculations provide a consistent interpretation of experiment, since (i) total energy of $β$--CuMnSb is higher than that of $α$--CuMnSb only by 0.12~eV per formula unit, which allows for epitaxial stabilization of this phase, (ii) the metallic character of $β$--CuMnSb favors the Ruderman-Kittel-Kasuya-Yoshida ferromagnetic coupling, and (iii) the calculated effective Curie-Weiss magnetic moment of Mn ions in both phases is about $5.5~μ_\mathrm{B}$, favorably close to the measured value. Calculated properties of all point native defects indicate that the most likely to occur are $\mathrm{Mn}_\mathrm{Cu}$ antisites. They affect magnetic properties of epilayers, but they cannot induce the ferromagnetic order in CuMnSb. Combined, the findings highlight a practical route towards fabrication of functional materials in which coexisting polymorphs provide complementing functionalities in one host. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 14 pages, 8 figures, 5 tables

Journal ref: Phys. Rev. B 110, 014436 (2024)

Overlapping Top Gate Electrodes based on Low Temperature Atomic Layer Deposition for Nanoscale Ambipolar Lateral Junctions

Authors: Christopher Fuchs, Lena Fürst, Hartmut Buhmann, Johannes Kleinlein, Laurens W. Molenkamp

Abstract: We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlapping top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric… ▽ More We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlapping top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric and as a robust insulating layer between two overlapping gate electrodes exhibiting a large dielectric breakdown field of > 1E9 V/m. The advantage of overlapping gates over the split gate approach is confirmed in model calculations of the electrostatics of the gate stack. The overlapping gate process is applied to Hall bar devices of mercury telluride in order to study the interaction of different quantum Hall states in the nn', np, pn and pp' regime. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: 7 pages, 3 figures

Spectral asymmetry induces a re-entrant quantum Hall effect in a topological insulator

Authors: Li-Xian Wang, Wouter Beugeling, Fabian Schmitt, Lukas Lunczer, Julian-Benedikt Mayer, Hartmut Buhmann, Ewelina M. Hankiewicz, Laurens W. Molenkamp

Abstract: The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we re… ▽ More The band inversion of topological materials in three spatial dimensions is intimately connected to the parity anomaly of two-dimensional massless Dirac fermions. At finite magnetic fields, the parity anomaly reveals itself as a non-zero spectral asymmetry, i.e., a non-zero difference between the number of conduction and valence band Landau levels, due to the unpaired zero Landau level. Here, we realize this two-dimensional Dirac physics at a single surface of the three-dimensional topological insulator (Hg,Mn)Te. We observe an unconventional re-entrant quantum Hall effect that can be directly related to the occurrence of spectral asymmetry in a single topological surface state. The effect should be observable in any topological insulator where the transport is dominated by a single Dirac surface state. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Comments: 13 pages, 10 figures, originally submitted version, includes supplementary material

Journal ref: Adv. Sci. 11, 2307447 (2024)

Balanced Quantum Hall Resistor

Authors: Kajetan M. Fijalkowski, Nan Liu, Martin Klement, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the z… ▽ More The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect. △ Less

Submitted 6 February, 2024; originally announced February 2024.

Journal ref: Nature Electronics (2024)

Nonlinear planar magnetotransport due to tilted Dirac cones in topological materials

Authors: Arya Thenapparambil, Graciely Elias dos Santos, Chang-An Li, Mohamed Abdelghany, Wouter Beugeling, Hartmut Buhmann, Charles Gould, Song-Bo Zhang, Björn Trauzettel, Laurens W. Molenkamp

Abstract: Nonlinear planar magnetotransport is ubiquitous in topological HgTe structures, both in tensile (topological insulator) or compressively strained layers (Weyl semimetal phase). We show that the common reason for the nonlinear planar magnetotransport is the presence of tilted Dirac cones combined with the formation of charge puddles. The origin of the tilted Dirac cones is the mix of the Zeeman ter… ▽ More Nonlinear planar magnetotransport is ubiquitous in topological HgTe structures, both in tensile (topological insulator) or compressively strained layers (Weyl semimetal phase). We show that the common reason for the nonlinear planar magnetotransport is the presence of tilted Dirac cones combined with the formation of charge puddles. The origin of the tilted Dirac cones is the mix of the Zeeman term due to the in-plane magnetic field and quadratic contributions to the dispersion relation. We develop a network model that mimics transport of tilted Dirac fermions in the landscape of charge puddles. The model captures the essential features of the experimental data. It should be relevant for nonlinear planar magnetotransport in a variety of topological and small band gap materials. △ Less

Submitted 17 July, 2023; originally announced July 2023.

Comments: 12 pages, 11 figures, 1 table

Journal ref: Nano Letters 2023, 23, 15, 6914-6919

Majorana-mediated thermoelectric transport in multiterminal junctions

Authors: Raffael L. Klees, Daniel Gresta, Jonathan Sturm, Laurens W. Molenkamp, Ewelina M. Hankiewicz

Abstract: The unambiguous identification of Majorana zero modes (MZMs) is one of the most outstanding problems of condensed matter physics. Thermal transport provides a detection tool that is sensitive to these chargeless quasiparticles. We study thermoelectric transport between metallic leads transverse to a Josephson junction. The central double quantum dot hosts conventional or topological Andreev states… ▽ More The unambiguous identification of Majorana zero modes (MZMs) is one of the most outstanding problems of condensed matter physics. Thermal transport provides a detection tool that is sensitive to these chargeless quasiparticles. We study thermoelectric transport between metallic leads transverse to a Josephson junction. The central double quantum dot hosts conventional or topological Andreev states that depend on the phase difference $φ$. We show that the presence of MZMs can be identified by a significant amplification of both the electrical and thermal conductance at $φ\approx π$ as well as the Seebeck coefficient at $φ\approx 0$. In addition, we show that the Wiedemann-Franz law is strongly violated in the presence of MZMs around $φ\approx π$ when compared to the conventional case. We further investigate the robustness of our results against Cooper pair splitting processes. △ Less

Submitted 27 August, 2024; v1 submitted 30 June, 2023; originally announced June 2023.

Comments: 13 pages, 8 figures, content corresponds to the published version

Journal ref: Phys. Rev. B 110, 064517 (2024)

Velocity and confinement of edge plasmons in HgTe-based 2D topological insulators

Authors: Alexandre Gourmelon, Elric Frigerio, Hiroshi Kamata, Lukas Lunczer, Anne Denis, Pascal Morfin, Michael Rosticher, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We obs… ▽ More High-frequency transport in the edge states of the quantum spin Hall (QSH) effect has to date rarely been explored, though it could cast light on the scattering mechanisms taking place therein. We here report on the measurement of the plasmon velocity in topological HgTe quantum wells both in the QSH and quantum Hall (QH) regimes, using harmonic GHz excitations and phase-resolved detection. We observe low plasmon velocities corresponding to large transverse widths, which we ascribe to the prominent influence of charge puddles forming in the vicinity of edge channels. Together with other recent works, it suggests that puddles play an essential role in the edge state physics and probably constitute a main hurdle on the way to clean and robust edge transport. △ Less

Submitted 22 February, 2023; originally announced February 2023.

Comments: 8 pages, 6 figures, + supplementary material

Topological band inversion in HgTe(001): surface and bulk signatures from photoemission

Authors: Raphael C. Vidal, Giovanni Marini, Lukas Lunczer, Simon Moser, Lena Fürst, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Charles Gould, Hartmut Buhmann, Wouter Beugeling, Giorgio Sangiovanni, Domenico Di Sante, Gianni Profeta, Laurens W. Molenkamp, Hendrik Bentmann, Friedrich Reinert

Abstract: HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow bindi… ▽ More HgTe is a versatile topological material and has enabled the realization of a variety of topological states, including two- and three-dimensional (3D) topological insulators and topological semimetals. Nevertheless, a quantitative understanding of its electronic structure remains challenging, in particular due to coupling of the Te 5p-derived valence electrons to Hg 5d core states at shallow binding energy. We present a joint experimental and theoretical study of the electronic structure in strained HgTe(001) films in the 3D topological-insulator regime, based on angle-resolved photoelectron spectroscopy and density functional theory. The results establish detailed agreement in terms of (i) electronic band dispersions and orbital symmetries, (ii) surface and bulk contributions to the electronic structure, and (iii) the importance of Hg 5d states in the valence-band formation. Supported by theory, our experiments directly image the paradigmatic band inversion in HgTe, underlying its non-trivial band topology. △ Less

Submitted 11 December, 2022; originally announced December 2022.

The topological Faraday effect cannot be observed in a realistic sample

Authors: Christian Berger, Florian Bayer, Laurens W. Molenkamp, Tobias Kiessling

Abstract: A striking feature of 3 dimensional (3D) topological insulators (TIs) is the theoretically expected topological magneto-electric (TME) effect, which gives rise to additional terms in Maxwell's laws of electromagnetism with an universal quantized coefficient proportional to half-integer multiples of the fine structure constant $α$. In an ideal scenario one therefore expects also quantized contribut… ▽ More A striking feature of 3 dimensional (3D) topological insulators (TIs) is the theoretically expected topological magneto-electric (TME) effect, which gives rise to additional terms in Maxwell's laws of electromagnetism with an universal quantized coefficient proportional to half-integer multiples of the fine structure constant $α$. In an ideal scenario one therefore expects also quantized contributions in the magneto-optical response of TIs. We review this premise by taking into account the trivial dielectric background of the TI bulk and potential host substrates, and the often present contribution of itinerant bulk carriers. We show that (i) one obtains a non-universal magneto-optical response whenever there is impedance mismatch between different layers and (ii) that the detectable signals due to the TME rapidly approach vanishingly small values as the impedance mismatch is detuned from zero. We demonstrate that it is methodologically impossible to deduce the existence of a TME exclusively from an optical experiment in the thin film limit of 3D TIs at high magnetic fields. △ Less

Submitted 9 December, 2022; originally announced December 2022.

Molecular Beam Epitaxy of a Half-Heusler Topological Superconductor Candidate YPtBi

Authors: Jiwoong Kim, Kajetan M. Fijalkowski, Johannes Kleinlein, Claus Schumacher, Anastasios Markou, Charles Gould, Steffen Schreyeck, Claudia Felser, Laurens W. Molenkamp

Abstract: The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topol… ▽ More The search for topological superconductivity has motivated investigations into materials that combine topological and superconducting properties. The half-Heusler compound YPtBi appears to be such a material, however experiments have thus far been limited to bulk single crystals, drastically limiting the scope of available experiments. This has made it impossible to investigate the potential topological nature of the superconductivity in this material. Experiments to access details about the superconducting state require sophisticated lithographic structures, typically based on thin films. Here we report on the establishment of high crystalline quality epitaxial thin films of YPtBi(111), grown using molecular beam epitaxy on Al2O3(0001) substrates. A robust superconducting state is observed, with both critical temperature and critical field consistent with that previously reported for bulk crystals. Moreover we find that AlOx capping sufficiently protects the sample surface from degradation to allow for proper lithography. Our results pave a path towards the development of advanced lithographic structures, that will allow the exploration of the potentially topological nature of superconductivity in YPtBi. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Comments: 5 pages, 4 figures

Milliwatt terahertz harmonic generation from topological insulator metamaterials

Authors: Klaas-Jan Tielrooij, Alessandro Principi, David Saleta Reig, Alexander Block, Sebin Varghese, Steffen Schreyeck, Karl Brunner, Grzegorz Karczewski, Igor Ilyakov, Oleksiy Ponomaryov, Thales V. A. G. de Oliveira, Min Chen, Jan-Christoph Deinert, Carmen Gomez Carbonell, Sergio O. Valenzuela, Laurens W. Molenkamp, Tobias Kiessling, Georgy V. Astakhov, Sergey Kovalev

Abstract: Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at… ▽ More Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Journal ref: Light Sci Appl 11, 315 (2022)

Quantum transport and mobility spectrum of topological carriers in (001) SnTe/PbTe heterojunctions

Authors: D. Śnieżek, Jarosław Wróbel, M. Kojdecki, C. Śliwa, S. Schreyeck, K. Brunner, L. W. Molenkamp, G. Karczewski, Jerzy Wróbel

Abstract: Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually… ▽ More Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually gapped. However, the phase coherence effects in 10 nm and 20 nm SnTe/PbTe samples are fully explained assuming existence of gapless Dirac cones. Magnetotransport at higher magnetic fields is described in the framework of mobility spectrum analysis (MSA). We demonstrate that the electron- and hole-like peaks observed simultaneously for all SnTe/PbTe heterojunctions may originate from the concave and convex parts of the energy isosurface for topological states -- and not from the existence of quasiparticles both carrying negative and positive charges. This interpretation is supported by numerical calculations of conductivity tensor components for gapless (100) Dirac cones, performed within a classical model and based on the solutions of Boltzmann transport equation. Our approach shows the feasibility of MSA in application to magnetotransport measurements on topological matter. △ Less

Submitted 20 January, 2023; v1 submitted 10 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. B 107, 045103 (2023)

Bulk-like magnetic properties in MBE-grown unstrained, antiferromagnetic CuMnSb

Authors: L. Scheffler, J. Werther, K. Gas, C. Schumacher, C. Gould, M. Sawicki, J. Kleinlein, L. W. Molenkamp

Abstract: A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $Φ_{\text{Mn}}$/… ▽ More A detailed study of the influence of molecular beam epitaxial growth conditions on the structural and magnetic characteristics of CuMnSb films on lattice matched GaSb is presented. For a set of nine 40~nm thick layers, the Mn and Sb fluxes are varied to produce material with different elemental compositions. It is found that the layers grown under a relative Mn to Sb flux ratio of $Φ_{\text{Mn}}$/$Φ_{\text{Sb}}=1.24\pm0.02$ are closest to the stoichiometric composition, for which the Néel temperature ($T_\text{N}$) attains its maximum values. Mn-related structural defects are believed to be the driving contribution to changes in the vertical lattice parameter. Having established the optimum growth conditions, a second set of samples with CuMnSb layer thickness varied from 5 to 510 nm is fabricated. We show that for sufficiently large thicknesses, the magnetic characteristics ($T_\text{N}\simeq62$ K, Curie-Weiss temperature $Θ_\text{CW} = -100$ K) of the stoichiometric layers do correspond to the parameters reported for bulk samples. On the other hand, we observe a reduction of $T_\text{N}$ as a function of the CuMnSb thickness for our thinnest layers. All findings reported here are of particular relevance for studies aiming at the demonstration of Néel vector switching and detection in this noncentrosymmetric antiferromagnet, which have been recently proposed. △ Less

Submitted 27 June, 2022; originally announced June 2022.

Comments: The following article has been accepted by Applied Physics Letters. After it is published, it will be found at https://doi.org/10.1063/5.0092828

Observation of cnoidal wave localization in non-linear topolectric circuits

Authors: Hendrik Hohmann, Tobias Hofmann, Tobias Helbig, Stefan Imhof, Hauke Brand, Lavi K. Upreti, Alexander Stegmaier, Alexander Fritzsche, Tobias Müller, Udo Schwingenschlögl, Ching Hua Lee, Martin Greiter, Laurens W. Molenkamp, Tobias Kießling, Ronny Thomale

Abstract: We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response… ▽ More We observe a localized cnoidal (LCn) state in an electric circuit network. Its formation derives from the interplay of non-linearity and the topology inherent to a Su-Schrieffer-Heeger (SSH) chain of inductors. Varicap diodes act as voltage-dependent capacitors, and create a non-linear on-site potential. For a sinusoidal voltage excitation around midgap frequency, we show that the voltage response in the non-linear SSH circuit follows the Korteweg-de Vries equation. The topological SSH boundary state which relates to a midgap impedance peak in the linearized limit is distorted into the LCn state in the non-linear regime, where the cnoidal eccentricity decreases from edge to bulk. △ Less

Submitted 20 June, 2022; originally announced June 2022.

Journal ref: Phys. Rev. Research 5, L012041 (2023)

Macroscopic Quantum Tunneling of a Topological Ferromagnet

Authors: Kajetan M. Fijalkowski, Nan Liu, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies… ▽ More The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies on a (V,Bi,Sb)2Te3 ferromagnetic topological insulator nanostructure in the quantum anomalous Hall regime. This allows us access to the dynamics of an individual ferromagnetic domain. The volume of the domain is estimated to be about 85 000 nm3, containing some 50 000 vanadium atoms, spread over a macroscopic distance of 115 nm. Telegraph noise resulting from the magnetization fluctuations of this domain is observed in the Hall signal. Careful analysis of the influence of temperature and external magnetic field on the domain switching statistics provides evidence for quantum tunneling of magnetization[15-22] in a macrospin state. This ferromagnetic macrospin is not only the largest magnetic object in which quantum tunneling has been observed, but also the first observation of the effect in a topological state of matter. △ Less

Submitted 8 June, 2022; originally announced June 2022.

Journal ref: Advanced Science 10, 2303165 (2023)

Finite field transport response of a dilute magnetic topological insulator based Josephson junction

Authors: Pankaj Mandal, Nicolai Taufertshöfer, Lukas Lunczer, Martin P. Stehno, Charles Gould, Laurens W. Molenkamp

Abstract: Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system, based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limit, to the best of our knowledge, the device shows, for the first time,… ▽ More Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction of such a system, based on the dilute magnetic topological insulator (Hg,Mn)Te and the type II superconductor MoRe. In the zero and very low field limit, to the best of our knowledge, the device shows, for the first time, induced supercurrent through a magnetically doped semiconductor, in this case a topological insulator. At higher fields, a rich and hysteretic magnetoresistance is revealed. Careful analysis shows that the explanation of this behaviour can be found in magnetic flux focusing stemming from the Meissner effect in the superconductor, without invoking any role of proximity induced superconductivity. The phenomena is important, as it will ubiquitously co-exist with any exotic new physics that may be present in this class of devices. △ Less

Submitted 26 April, 2022; originally announced April 2022.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright \c{opyright} 2022 American Chemical Society after peer review. To access the final edited and published work see doi.org/10.1021/acs.nanolett.1c04903

Journal ref: Nano Letters (2022)

Counterpropagating topological and quantum Hall edge channels

Authors: Saquib Shamim, Pragya Shekhar, Wouter Beugeling, Jan Böttcher, Andreas Budewitz, Julian-Benedikt Mayer, Lukas Lunczer, Ewelina M. Hankiewicz, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transp… ▽ More The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is destroyed at a critical magnetic field, and a trivial insulating gap appears in the spectrum for stronger fields. In this work, we report the absence of this transport gap in disordered two dimensional topological insulators in perpendicular magnetic fields of up to 16 T. Instead, we observe that a topological edge channel (from band inversion) coexists with a counterpropagating quantum Hall edge channel for magnetic fields at which the transition to the insulating regime is expected. For larger fields, we observe only the quantum Hall edge channel with transverse resistance close to $h/e^2$. By tuning the disorder using different fabrication processes, we find evidence that this unexpected $ν=1$ plateau originates from extended quantum Hall edge channels along a continuous network of charge puddles at the edges of the device. △ Less

Submitted 13 May, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Comments: 8+3 pages, 5+2 figures

Journal ref: Nature Communications volume 13, Article number: 2682 (2022)

Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy

Authors: N. Liu, S. Schreyeck, K. M. Fijalkowski, M. Kamp, K. Brunner, C. Gould, L. W. Molenkamp

Abstract: MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about… ▽ More MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE. △ Less

Submitted 27 November, 2021; originally announced November 2021.

Massive and topological surface states in tensile strained HgTe

Authors: David M. Mahler, Valentin L. Müller, Cornelius Thienel, Jonas Wiedenmann, Wouter Beugeling, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calcul… ▽ More Magneto-transport measurements on gated high mobility heterostructures containing a 60 nm layer of tensile strained HgTe, a three-dimensional topological insulator, show well-developed Hall quantization from surface states both in the n- as well as in the p-type regime. While the n-type behavior is due to transport in the topological surface state of the material, we find from 8-orbital k.p calculations that the p-type transport results from massive Volkov-Pankratov states. Their formation prevents the Dirac point and thus the p-conducting topological surface state from being accessible in transport experiments. This interpretation is supported by low-field magneto-transport experiments demonstrating the coexistence of n-conducting topological surface states and p-conducting Volkov-Pankratov states at the relevant gate voltages. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 15+5 pages, 5 figures; initially submitted version

Quantum anomalous Hall edge channels survive up to the Curie temperature

Authors: Kajetan M. Fijalkowski, Nan Liu, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a car… ▽ More Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Journal ref: Nature Communications 12, 5599 (2021)

Electron-hole scattering limited transport of Dirac fermions in a topological insulator

Authors: Valentin L. Müller, Yuan Yan, Oleksiy Kashuba, Björn Trauzettel, Mohamed Abdelghany, Johannes Kleinlein, Wouter Beugeling, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the ob… ▽ More We experimentally investigate the effect of electron temperature on transport in the two-dimensional Dirac surface states of the three-dimensional topological insulator HgTe. We find that around the minimal conductivity point, where both electrons and holes are present, heating the carriers with a DC current results in a non-monotonic differential resistance of narrow channels. We show that the observed initial increase in resistance can be attributed to electron-hole scattering, while the decrease follows naturally from the change in Fermi energy of the charge carriers. Both effects are governed dominantly by a van Hove singularity in the bulk valence band. The results demonstrate the importance of interband electron-hole scattering in the transport properties of topological insulators. △ Less

Submitted 7 June, 2021; originally announced June 2021.

Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator

Authors: K. M. Fijalkowski, N. Liu, M. Hartl, M. Winnerlein, P. Mandal, A. Coschizza, A. Fothergill, S. Grauer, S. Schreyeck, K. Brunner, M. Greiter, R. Thomale, C. Gould, L. W. Molenkamp

Abstract: In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial… ▽ More In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 103, 235111 (2021)

Super-resonant transport of topological surface states subjected to in-plane magnetic fields

Authors: Song-Bo Zhang, Chang-An Li, Francisco Peña-Benitez, Piotr Surówka, Roderich Moessner, Laurens W. Molenkamp, Björn Trauzettel

Abstract: Magnetic oscillations of Dirac surface states of topological insulators are expected to be associated with the formation of Landau levels or the Aharonov-Bohm effect. We instead study the conductance of Dirac surface states subjected to an in-plane magnetic field in presence of a barrier potential. Strikingly, we find that, in the case of large barrier potentials, the surface states exhibit pronou… ▽ More Magnetic oscillations of Dirac surface states of topological insulators are expected to be associated with the formation of Landau levels or the Aharonov-Bohm effect. We instead study the conductance of Dirac surface states subjected to an in-plane magnetic field in presence of a barrier potential. Strikingly, we find that, in the case of large barrier potentials, the surface states exhibit pronounced oscillations in the conductance when varying the magnetic field, in the \textit{absence} of Landau levels or the Aharonov-Bohm effect. These novel magnetic oscillations are attributed to the emergence of \textit{super-resonant regimes} by tuning the magnetic field, in which almost all propagating electrons cross the barrier with perfect transmission. In the case of small and moderate barrier potentials, we also identify a positive magnetoconductance which is due to the increase of the Fermi surface by tilting the surface Dirac cone. Moreover, we show that for weak magnetic fields, the conductance displays a shifted sinusoidal dependence on the field direction with period $π$ and phase shift determined by the tilting direction with respect to the field direction. Our predictions can be applied to many topological insulators, such as HgTe and Bi$_{2}$Se$_{3}$, and provide important insights into exploring and understanding exotic magnetotransport properties of topological surface states. △ Less

Submitted 27 April, 2021; v1 submitted 26 February, 2021; originally announced February 2021.

Comments: 5+2 pages, 4 figures

Journal ref: Phys. Rev. Lett. 127, 076601 (2021)

Unidirectional magnetoresistance and spin-orbit torque in NiMnSb

Authors: J. Železný, Z. Fang, K. Olejník, J. Patchett, F. Gerhard, C. Gould, L. W. Molenkamp, C. Gomez-Olivella, J. Zemen, T. Tichý, T. Jungwirth, C. Ciccarelli

Abstract: Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry… ▽ More Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 29 pages, 13 figures

Journal ref: Phys. Rev. B 104, 054429 (2021)

Dirac quantum kinetic equation: minimal conductivity revisited

Authors: Oleksiy Kashuba, Björn Trauzettel, Laurens W. Molenkamp

Abstract: The kinetic equation used for the description of Dirac systems does not fully take into account two features that play an important role in the vicinity of the Dirac point: (i) the spin degree of freedom, in particular if the spin-flip energy $2 vp$ is not large anymore; and (ii) the failure of the semiclassical approximation due to the large Fermi wavelength. In our work, we propose a novel quant… ▽ More The kinetic equation used for the description of Dirac systems does not fully take into account two features that play an important role in the vicinity of the Dirac point: (i) the spin degree of freedom, in particular if the spin-flip energy $2 vp$ is not large anymore; and (ii) the failure of the semiclassical approximation due to the large Fermi wavelength. In our work, we propose a novel quantum kinetic equation, which does not have these two drawbacks. Exploiting it in the presence of short range disorder, we demonstrate how it predicts the correct minimal conductivity in 2D Dirac system, a result that has so far been obtained only by other methods like the Kubo formula. The nature of the presented kinetic equation opens up the possibility for the kinetic description of deeply quantum and even strongly correlated Dirac systems. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 5 pages

Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb

Authors: Lukas Scheffler, Katarzyna Gas, Sanjib Banik, Martin Kamp, Jonas Knobel, Haicheng Lin, Claus Schumacher, Charles Gould, Maciej Sawicki, Johannes Kleinlein, Laurens W. Molenkamp

Abstract: We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electric… ▽ More We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Comments: 6 pages, 5 figures, accepted in PRM

Emergent quantum Hall effects below $50$ mT in a two-dimensional topological insulator

Authors: Saquib Shamim, Wouter Beugeling, Jan Böttcher, Pragya Shekhar, Andreas Budewitz, Philipp Leubner, Lukas Lunczer, Ewelina M. Hankiewicz, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two… ▽ More The realization of the quantum spin Hall effect in HgTe quantum wells has led to the development of topological materials which, in combination with magnetism and superconductivity, are predicted to host chiral Majorana fermions. However, the large magnetization ($\sim$ a few tesla) in conventional quantum anomalous Hall system, makes it challenging to induce superconductivity. Here, we report two different emergent quantum Hall effects in HgTe quantum wells dilutely alloyed with Mn. Firstly, a novel quantum Hall state emerges from the quantum spin Hall state at an exceptionally low magnetic field of $\sim 50$ mT. Secondly, tuning towards the bulk $p$-regime, we resolve multiple quantum Hall plateaus at fields as low as $20 - 30$ mT, where transport is dominated by a van Hove singularity in the valence band. These emergent quantum Hall phenomena rely critically on the topological band structure of HgTe and their occurrence at very low fields make them an ideal candidate for interfacing with superconductors to realize chiral Majorana fermions. △ Less

Submitted 31 March, 2020; originally announced April 2020.

Journal ref: Sci. Adv. 6, eaba4625 (2020)

Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators

Authors: Thiago R. F. Peixoto, Hendrik Bentmann, Philipp Rüßmann, Abdul-Vakhab Tcakaev, Martin Winnerlein, Steffen Schreyeck, Sonja Schatz, Raphael Crespo Vidal, Fabian Stier, Volodymyr Zabolotnyy, Robert J. Green, Chul Hee Min, Celso I. Fornari, Henriette Maaß, Hari Babu Vasili, Pierluigi Gargiani, Manuel Valvidares, Alessandro Barla, Jens Buck, Moritz Hoesch, Florian Diekmann, Sebastian Rohlf, Matthias Kalläne, Kai Rossnagel, Charles Gould , et al. (5 additional authors not shown)

Abstract: Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and mul… ▽ More Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI. △ Less

Submitted 15 January, 2020; originally announced January 2020.

Journal ref: Npj Quantum Materials 5, 87 (2020)

Coexistence of surface and bulk ferromagnetism mimics skyrmion Hall effect in a topological insulator

Authors: Kajetan M. Fijalkowski, Matthias Hartl, Martin Winnerlein, Pankaj Mandal, Steffen Schreyeck, Karl Brunner, Charles Gould, Laurens W. Molenkamp

Abstract: Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different… ▽ More Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases. △ Less

Submitted 5 December, 2019; originally announced December 2019.

Journal ref: Phys. Rev. X 10, 011012 (2020)

Observation of bulk boundary correspondence breakdown in topolectrical circuits

Authors: Tobias Helbig, Tobias Hofmann, Stefan Imhof, Mohamed Abdelghany, Tobias Kiessling, Laurens W. Molenkamp, Ching Hua Lee, Alexander Szameit, Martin Greiter, Ronny Thomale

Abstract: The study of the laws of nature has traditionally been pursued in the limit of isolated systems, where energy is conserved. This is not always a valid approximation, however, as the inclusion of features like gain and loss, or periodic driving, qualitatively amends these laws. A contemporary frontier of meta-material research is the challenge open systems pose to the established characterization o… ▽ More The study of the laws of nature has traditionally been pursued in the limit of isolated systems, where energy is conserved. This is not always a valid approximation, however, as the inclusion of features like gain and loss, or periodic driving, qualitatively amends these laws. A contemporary frontier of meta-material research is the challenge open systems pose to the established characterization of topological matter. There, one of the most relied upon principles is the bulk-boundary correspondence (BBC), which intimately relates the properties of the surface states to the topological classification of the bulk. The presence of gain and loss, in combination with the violation of reciprocity, has recently been predicted to affect this principle dramatically. Here, we report the experimental observation of BBC violation in a non-reciprocal topolectric circuit. The circuit admittance spectrum exhibits an unprecedented sensitivity to the presence of a boundary, displaying an extensive admittance mode localization despite a translationally invariant bulk. Intriguingly, we measure a non-local voltage response due to broken BBC. Depending on the AC current feed frequency, the voltage signal accumulates at the left or right boundary, and increases as a function of nodal distance to the current feed. △ Less

Submitted 26 July, 2019; originally announced July 2019.

Comments: 36 pages, 9 figures

Interplay of Dirac nodes and Volkov-Pankratov surface states in compressively strained HgTe

Authors: David M. Mahler, Julian-Benedikt Mayer, Philipp Leubner, Lukas Lunczer, Domenico Di Sante, Giorgio Sangiovanni, Ronny Thomale, Ewelina M. Hankiewicz, Hartmut Buhmann, Charles Gould, Laurens W. Molenkamp

Abstract: Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detai… ▽ More Preceded by the discovery of topological insulators, Dirac and Weyl semimetals have become a pivotal direction of research in contemporary condensed matter physics. While easily accessible from a theoretical viewpoint, these topological semimetals pose a serious challenge in terms of experimental synthesis and analysis to allow for their unambiguous identification. In this work, we report on detailed transport experiments on compressively strained HgTe. Due to the superior sample quality in comparison to other topological semimetallic materials, this enables us to resolve the interplay of topological surface states and semimetallic bulk states to an unprecedented degree of precision and complexity. As our gate design allows us to precisely tune the Fermi level at the Weyl and Dirac points, we identify a magnetotransport regime dominated by Weyl/Dirac bulk state conduction for small carrier densities and by topological surface state conduction for larger carrier densities. As such, similar to topological insulators, HgTe provides the archetypical reference for the experimental investigation of topological semimetals. △ Less

Submitted 4 May, 2020; v1 submitted 25 July, 2019; originally announced July 2019.

Comments: 8 pages, 7 figures, accepted in PRX, added kp calculation and supplementary

Journal ref: Phys. Rev. X 9, 031034 (2019)

Proximity Induced Superconductivity in CdTe-HgTe Core-Shell Nanowires

Authors: Jan Hajer, Maximilian Kessel, Christoph Brüne, Martin P. Stehno, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable $I_c R_n$ product, a positive excess current and multiple Andreev reflections up to fourth order fu… ▽ More In this letter we report on proximity superconductivity induced in CdTe-HgTe core-shell nanowires, a quasi-one-dimensional heterostructure of the topological insulator HgTe. We demonstrate a Josephson supercurrent in our nanowires contacted with superconducting Al leads. The observation of a sizable $I_c R_n$ product, a positive excess current and multiple Andreev reflections up to fourth order further indicate a high interface quality of the junctions. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Comments: Accepted for publication in Nano Letters

Interacting topological edge channels

Authors: Jonas Strunz, Jonas Wiedenmann, Christoph Fleckenstein, Lukas Lunczer, Wouter Beugeling, Valentin L. Müller, Pragya Shekhar, Niccoló Traverso Ziani, Saquib Shamim, Johannes Kleinlein, Hartmut Buhmann, Björn Trauzettel, Laurens W. Molenkamp

Abstract: Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brough… ▽ More Electrical currents in a quantum spin Hall insulator are confined to the boundary of the system. The charge carriers can be described as massless relativistic particles, whose spin and momentum are coupled to each other. While the helical character of those states is by now well established experimentally, it is a fundamental open question how those edge states interact with each other when brought in spatial proximity. We employ a topological quantum point contact to guide edge channels from opposite sides into a quasi-one-dimensional constriction, based on inverted HgTe quantum wells. Apart from the expected quantization in integer steps of $2 e^2/h$, we find a surprising additional plateau at $e^2/h$. We explain our observation by combining band structure calculations and repulsive electron-electron interaction effects captured within the Tomonaga-Luttinger liquid model. The present results may have direct implications for the study of one-dimensional helical electron quantum optics, Majorana- and potentially para-fermions. △ Less

Submitted 20 May, 2019; originally announced May 2019.

Journal ref: Nat. Phys. 16, 83-88 (2020)

How to measure the entropy of a mesoscopic system via thermoelectric transport

Authors: Yaakov Kleeorin, Holger Thierschmann, Hartmut Buhmann, Antoine Georges, Laurens W. Molenkamp, Yigal Meir

Abstract: Entropy is a fundamental thermodynamic quantity indicative of the accessible degrees of freedom in a system. While it has been suggested that the entropy of a mesoscopic system can yield nontrivial information on emergence of exotic states, its measurement in such small electron-number system is a daunting task. Here we propose a method to extract the entropy of a Coulomb-blockaded mesoscopic syst… ▽ More Entropy is a fundamental thermodynamic quantity indicative of the accessible degrees of freedom in a system. While it has been suggested that the entropy of a mesoscopic system can yield nontrivial information on emergence of exotic states, its measurement in such small electron-number system is a daunting task. Here we propose a method to extract the entropy of a Coulomb-blockaded mesoscopic system from transport measurements. We prove analytically and demonstrate numerically the applicability of the method to such a mesoscopic system of arbitrary spectrum and degeneracies. We then apply our procedure to measurements of thermoelectric response of a single quantum dot, and demonstrate how it can be used to deduce the entropy change across Coulomb-blockade valleys, resolving, along the way, a long-standing puzzle of the experimentally observed finite thermoelectric response at the apparent particle-hole symmetric point. △ Less

Submitted 21 January, 2020; v1 submitted 18 April, 2019; originally announced April 2019.

Comments: Final Version, merged

Journal ref: Nature Communications 10, 5801 (2019)

Non-Majorana Origin of the Half-Quantized Conductance Plateau in Quantum Anomalous Hall Insulator and Superconductor Hybrid Structures

Authors: Morteza Kayyalha, Di Xiao, Ruoxi Zhang, Jaeho Shin, Jue Jiang, Fei Wang, Yi-Fan Zhao, Ling Zhang, Kajetan M. Fijalkowski, Pankaj Mandal, Martin Winnerlein, Charles Gould, Qi Li, Laurens W. Molenkamp, Moses H. W. Chan, Nitin Samarth, Cui-Zu Chang

Abstract: A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions… ▽ More A quantum anomalous Hall (QAH) insulator coupled to an s-wave superconductor is predicted to harbor a topological superconducting phase, the elementary excitations of which (i.e. Majorana fermions) can form topological qubits upon non-Abelian braiding operations. A recent transport experiment interprets the half-quantized two-terminal conductance plateau as the presence of chiral Majorana fermions in a millimeter-size QAH-Nb hybrid structure. However, there are concerns about this interpretation because non-Majorana mechanisms can also generate similar signatures, especially in a disordered QAH system. Here, we fabricated QAH-Nb hybrid structures and studied the QAH-Nb contact transparency and its effect on the corresponding two-terminal conductance. When the QAH film is tuned to the metallic regime by electric gating, we observed a sharp zero-bias enhancement in the differential conductance, up to 80% at zero magnetic field. This large enhancement suggests high probability of Andreev reflection and transparent interface between the magnetic topological insulator (TI) and Nb layers. When the magnetic TI film is in the QAH state with well-aligned magnetization, we found that the two-terminal conductance is always half-quantized. Our experiment provides a comprehensive understanding of the superconducting proximity effect observed in QAH-superconductor hybrid structures and shows that the half-quantized conductance plateau is unlikely to be induced by chiral Majorana fermions. △ Less

Submitted 12 April, 2019; originally announced April 2019.

Comments: 17 pages, 4 figures. Comments are welcome. Supplementary materials will be provided upon request

Journal ref: Science 367, 64-67(2020)

Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators

Authors: Matthieu C. Dartiailh, Simon Hartinger, Alexandre Gourmelon, Kalle Bendias, Hugo Bartolomei, Hiroshi Kamata, Jean-Marc Berroir, Gwendal Fève, Bernard Plaçais, Lukas Lunczer, Raimund Schlereth, Hartmut Buhmann, Laurens W. Molenkamp, Erwann Bocquillon

Abstract: Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carrier… ▽ More Topological effects in edge states are clearly visible on short lengths only, thus largely impeding their studies. On larger distances, one may be able to dynamically enhance topological signatures by exploiting the high mobility of edge states with respect to bulk carriers. Our work on microwave spectroscopy highlights the responses of the edges which host very mobile carriers, while bulk carriers are drastically slowed down in the gap. Though the edges are denser than expected, we establish that charge relaxation occurs on short timescales, and suggests that edge states can be addressed selectively on timescales over which bulk carriers are frozen. △ Less

Submitted 8 July, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: Main text (5 pages, 4 figures) + Supplementary Material

Journal ref: Phys. Rev. Lett. 124, 076802 (2020)

Survival of the quantum anomalous Hall effect in orbital magnetic fields as a consequence of the parity anomaly

Authors: J. Böttcher, C. Tutschku, L. W. Molenkamp, E. M. Hankiewicz

Abstract: Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demon… ▽ More Recent experimental progress in condensed matter physics enables the observation of signatures of the parity anomaly in two-dimensional Dirac-like materials. Using effective field theories and analyzing band structures in external out-of-plane magnetic fields (orbital fields), we show that topological properties of quantum anomalous Hall (QAH) insulators are related to the parity anomaly. We demonstrate that the QAH phase survives in orbital fields, violates the Onsager relation, and can be therefore distinguished from a quantum Hall (QH) phase. As a fingerprint of the QAH phase in increasing orbital fields, we predict a transition from a quantized Hall plateau with $σ_\mathrm{xy}= -\mathrm{e}^2/\mathrm{h}$ to a not perfectly quantized plateau, caused by scattering processes between counterpropagating QH and QAH edge states. This transition can be especially important in paramagnetic QAH insulators, such as (Hg,Mn)Te/CdTe quantum wells, in which exchange interaction and orbital fields compete. △ Less

Submitted 12 August, 2020; v1 submitted 16 January, 2019; originally announced January 2019.

Comments: 15 pages and 10 figures A few minor typos have been corrected, e.g., units in Eq. (4) have been corrected

Journal ref: Phys. Rev. Lett. 123, 226602 (2019)

Residual strain in free-standing CdTe nanowires overgrown with HgTe

Authors: M. Kessel, L. Lunczer, N. V. Tarakina, C. Brüne, H. Buhmann, L. W. Molenkamp

Abstract: We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small l… ▽ More We investigate the crystal properties of CdTe nanowires overgrown with HgTe. Scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) confirm, that the growth results in a high ensemble uniformity and that the individual heterostructures are single-crystalline, respectively. We use high-resolution X-ray diffraction (HRXRD) to investigate strain, caused by the small lattice mismatch between the two materials. We find that both CdTe and HgTe show changes in lattice constant compared to the respective bulk lattice constants. The measurements reveal a complex strain pattern with signatures of both uniaxial and shear strains present in the overgrown nanowires. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Breaking crystalline symmetry of epitaxial SnTe films by strain

Authors: Steffen Schreyeck, Karl Brunner, Laurens W. Molenkamp, Grzegorz Karczewski, Martin Schmitt, Paolo Sessi, Matthias Vogt, Stefan Wilfert, Artem B. Odobesko, Matthias Bode

Abstract: SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} refl… ▽ More SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space mapping, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31\% breaking the translational crystal symmetry. △ Less

Submitted 30 November, 2018; originally announced November 2018.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. Materials 3, 024203 (2019)

Phase-tunable thermal rectification in the topological SQUIPT

Authors: Lennart Bours, Björn Sothmann, Matteo Carrega, Elia Strambini, Alessandro Braggio, Ewelina M. Hankiewicz, Laurens W. Molenkamp, Francesco Giazotto

Abstract: We theoretically explore the behavior of thermal transport in the topological SQUIPT, in the linear and nonlinear regime. The device consists of a topological Josephson junction based on a two-dimensional topological insulator in contact with two superconducting leads, and a probe tunnel coupled to the topological edge states of the junction. We compare the performance of a normal metal and a grap… ▽ More We theoretically explore the behavior of thermal transport in the topological SQUIPT, in the linear and nonlinear regime. The device consists of a topological Josephson junction based on a two-dimensional topological insulator in contact with two superconducting leads, and a probe tunnel coupled to the topological edge states of the junction. We compare the performance of a normal metal and a graphene probe, showing that the topological SQUIPT behaves as a passive thermal rectifier and that it can reach a rectification coefficient of up to $~ 145\%$ with the normal metal probe. Moreover, the interplay between the superconducting leads and the helical edge states leads to a unique behaviour due to a Doppler shift like effect, that allows one to influence quasi-particle transport through the edge channels via the magnetic flux that penetrates the junction. Exploiting this effect, we can greatly enhance the rectification coefficient for temperatures below the critical temperature $T_\text{C}$ in an active rectification scheme. △ Less

Submitted 7 November, 2018; originally announced November 2018.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. Applied 11, 044073 (2019)

Microwave studies of the fractional Josephson effect in HgTe-based Josephson junctions

Authors: Erwann Bocquillon, Jonas Wiedenmann, Russell S. Deacon, Teunis M. Klapwijk, Hartmut Buhmann, Laurens W. Molenkamp

Abstract: The rise of topological phases of matter is strongly connected to their potential to host Majorana bound states, a powerful ingredient in the search for a robust, topologically protected, quantum information processing. In order to produce such states, a method of choice is to induce superconductivity in topological insulators. The engineering of the interplay between superconductivity and the ele… ▽ More The rise of topological phases of matter is strongly connected to their potential to host Majorana bound states, a powerful ingredient in the search for a robust, topologically protected, quantum information processing. In order to produce such states, a method of choice is to induce superconductivity in topological insulators. The engineering of the interplay between superconductivity and the electronic properties of a topological insulator is a challenging task and it is consequently very important to understand the physics of simple superconducting devices such as Josephson junctions, in which new topological properties are expected to emerge. In this article, we review recent experiments investigating topological superconductivity in topological insulators, using microwave excitation and detection techniques. More precisely, we have fabricated and studied topological Josephson junctions made of HgTe weak links in contact with two Al or Nb contacts. In such devices, we have observed two signatures of the fractional Josephson effect, which is expected to emerge from topologically-protected gapless Andreev bound states. We first recall the theoretical background on topological Josephson junctions, then move to the experimental observations. Then, we assess the topological origin of the observed features and conclude with an outlook towards more advanced microwave spectroscopy experiments, currently under development. △ Less

Submitted 9 October, 2018; originally announced October 2018.

Comments: Lectures given at the San Sebastian Topological Matter School 2017, published in "Topological Matter. Springer Series in Solid-State Sciences, vol 190. Springer"

Topological Superconductivity in a Phase-Controlled Josephson Junction

Authors: Hechen Ren, Falko Pientka, Sean Hart, Andrew Pierce, Michael Kosowsky, Lukas Lunczer, Raimund Schlereth, Benedikt Scharf, Ewelina M. Hankiewicz, Laurens W. Molenkamp, Bertrand I. Halperin, Amir Yacoby

Abstract: Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations have non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner. While signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do… ▽ More Topological superconductors can support localized Majorana states at their boundaries. These quasi-particle excitations have non-Abelian statistics that can be used to encode and manipulate quantum information in a topologically protected manner. While signatures of Majorana bound states have been observed in one-dimensional systems, there is an ongoing effort to find alternative platforms that do not require fine-tuning of parameters and can be easily scalable to large numbers of states. Here we present a novel experimental approach towards a two-dimensional architecture. Using a Josephson junction made of HgTe quantum well coupled to thin-film aluminum, we are able to tune between a trivial and a topological superconducting state by controlling the phase difference $φ$ across the junction and applying an in-plane magnetic field. We determine the topological state of the induced superconductor by measuring the tunneling conductance at the edge of the junction. At low magnetic fields, we observe a minimum in the tunneling spectra near zero bias, consistent with a trivial superconductor. However, as the magnetic field increases, the tunneling conductance develops a zero-bias peak which persists over a range of $φ$ that expands systematically with increasing magnetic fields. Our observations are consistent with theoretical predictions for this system and with full quantum mechanical numerical simulations performed on model systems with similar dimensions and parameters. Our work establishes this system as a promising platform for realizing topological superconductivity and for creating and manipulating Majorana modes and will therefore open new avenues for probing topological superconducting phases in two-dimensional systems. △ Less

Submitted 9 September, 2018; originally announced September 2018.

Comments: Supplementary contains resized figures. Original files are available upon request

Journal ref: Nature 569 (2019) 93-98

Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells

Authors: T. Khouri, S. Pezzini, M. Bendias, P. Leubner, U. Zeitler, N. E. Hussey, H. Buhmann, L. W. Molenkamp, M. Titov, S. Wiedmann

Abstract: In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by… ▽ More In this study we have measured the magnetoresistance response of inverted HgTe quantum wells in the presence of a large parallel magnetic field up to 33 T is applied. We show that in quantum wells with inverted band structure a monotonically decreasing magnetoresistance is observed when a magnetic field up to order 10 T is applied parallel to the quantum well plane. This feature is accompanied by a vanishing of non-locality and is consistent with a predicted modification of the energy spectrum that becomes gapless at a critical in-plane field $B_{c}$. Magnetic fields in excess of $B_c$ allow us to investigate the evolution of the magnetoresistance in this field-induced semi-metallic region beyond the known regime. After an initial saturation phase in the presumably gapless phase, we observe a strong upturn of the longitudinal resistance. A small residual Hall signal picked up in non-local measurements suggests that this feature is likely a bulk phenomenon and caused by the semi-metallicity of the sample. Theoretical calculations indeed support that the origin of these features is classical and a power law upturn of the resistance can be expected due to the specifics of two-carrier transport in thin (semi-)metallic samples subjected to large magnetic fields. △ Less

Submitted 7 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. B 99, 075303 (2019)

Band structure engineering and reconstruction in electric circuit networks

Authors: Tobias Helbig, Tobias Hofmann, Ching Hua Lee, Ronny Thomale, Stefan Imhof, Laurens W. Molenkamp, Tobias Kiessling

Abstract: We develop an approach to design, engineer, and measure band structures in a synthetic crystal composed of electric circuit elements. Starting from the nodal analysis of a circuit lattice in terms of currents and voltages, our Laplacian formalism for synthetic matter allows us to investigate arbitrary tight-binding models in terms of wave number resolved Laplacian eigenmodes, yielding an admittanc… ▽ More We develop an approach to design, engineer, and measure band structures in a synthetic crystal composed of electric circuit elements. Starting from the nodal analysis of a circuit lattice in terms of currents and voltages, our Laplacian formalism for synthetic matter allows us to investigate arbitrary tight-binding models in terms of wave number resolved Laplacian eigenmodes, yielding an admittance band structure of the circuit. For illustration, we model and measure a honeycomb circuit featuring a Dirac cone admittance bulk dispersion as well as flat band admittance edge modes at its bearded and zigzag terminations. We further employ our circuit band analysis to measure a topological phase transition in the topolectrical Su-Schrieffer-Heeger circuit. △ Less

Submitted 25 July, 2018; originally announced July 2018.

Comments: 4+e pages, 4 pages supplement, 5 figures

Journal ref: Phys. Rev. B 99, 161114 (2019)

Relativistic Gurzhi effect in channels of Dirac materials

Authors: Oleksiy Kashuba, Björn Trauzettel, Laurens W. Molenkamp

Abstract: Charge transport in channel-shaped 2D Dirac systems is studied employing the Boltzmann equation. The dependence of the resistivity on temperature and chemical potential is investigated. An accurate understanding of the influence of electron-electron interaction and material disorder allows us to identify a parameter regime, where the system reveals hydrodynamic transport behavior. We point out the… ▽ More Charge transport in channel-shaped 2D Dirac systems is studied employing the Boltzmann equation. The dependence of the resistivity on temperature and chemical potential is investigated. An accurate understanding of the influence of electron-electron interaction and material disorder allows us to identify a parameter regime, where the system reveals hydrodynamic transport behavior. We point out the conditions for three Dirac fermion specific features: heat flow hydrodynamics, pseudo\-diffusive transport, and the electron-hole scattering dominated regime. It is demonstrated that for clean samples the relativistic Gurzhi effect, a definite indicator of hydrodynamic transport, can be observed. △ Less

Submitted 24 May, 2018; v1 submitted 8 May, 2018; originally announced May 2018.

Comments: 15 pages, 6 figures, 2 tables

Journal ref: Phys. Rev. B 97, 205129 (2018)