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Molecular collapse in monolayer graphene
Authors:
Robbe Van Pottelberge,
Dean Moldovan,
S. P. Milovanovic,
Francois M. Peeters
Abstract:
Atomic collapse is a phenomenon inherent to relativistic quantum mechanics where electron states dive in the positron continuum for highly charged nuclei. This phenomenon was recently observed in graphene. Here we investigate a novel collapse phenomenon when multiple sub- and supercritical charges of equal strength are put close together as in a molecule. We construct a phase diagram which consist…
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Atomic collapse is a phenomenon inherent to relativistic quantum mechanics where electron states dive in the positron continuum for highly charged nuclei. This phenomenon was recently observed in graphene. Here we investigate a novel collapse phenomenon when multiple sub- and supercritical charges of equal strength are put close together as in a molecule. We construct a phase diagram which consists of three distinct regions: 1) subcritical, 2) frustrated atomic collapse, and 3) molecular collapse. We show that the single impurity atomic collapse resonances rearrange themselves to form molecular collapse resonances which exhibit a distinct quasi-bonding, anti-bonding and non-bonding character. Here we limit ourselves to a systems consisting of two and three charges. We show that by tuning the distance between the charges and their strength a high degree of control over the molecular collapse resonances can be achieved.
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Submitted 2 September, 2019;
originally announced September 2019.
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Magnetic field dependence of the atomic collapse state in graphene
Authors:
Dean Moldovan,
Massoud Ramezani Masir,
Francois M. Peeters
Abstract:
Quantum electrodynamics predicts that heavy atoms ($Z > Z_c \approx 170$) will undergo the process of atomic collapse where electrons sink into the positron continuum and a new family of so-called collapsing states emerges. The relativistic electrons in graphene exhibit the same physics but at a much lower critical charge ($Z_c \approx 1$) which has made it possible to confirm this phenomenon expe…
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Quantum electrodynamics predicts that heavy atoms ($Z > Z_c \approx 170$) will undergo the process of atomic collapse where electrons sink into the positron continuum and a new family of so-called collapsing states emerges. The relativistic electrons in graphene exhibit the same physics but at a much lower critical charge ($Z_c \approx 1$) which has made it possible to confirm this phenomenon experimentally. However, there exist conflicting predictions on the effect of a magnetic field on atomic collapse. These theoretical predictions are based on the continuum Dirac-Weyl equation, which does not have an exact analytical solution for the interplay of a supercritical Coulomb potential and the magnetic field. Approximative solutions have been proposed, but because the two effects compete on similar energy scales, the theoretical treatment varies depending on the regime which is being considered. These limitations are overcome here by starting from a tight-binding approach and computing exact numerical results. By avoiding special limit cases, we found a smooth evolution between the different regimes. We predict that the atomic collapse effect persists even after the magnetic field is activated and that the critical charge remains unchanged. We show that the atomic collapse regime is characterized: 1) by a series of Landau level anticrossings and 2) by the absence of $\sqrt{B}$ scaling of the Landau levels with regard to magnetic field strength.
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Submitted 5 November, 2017;
originally announced November 2017.
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Electronic properties of bilayer phosphorene quantum dots in the presence of perpendicular electric and magnetic fields
Authors:
L. L. Li,
D. Moldovan,
W. Xu,
F. M. Peeters
Abstract:
Using the tight-binding approach, we investigate the electronic properties of bilayer phosphorene (BLP) quantum dots (QDs) in the presence of perpendicular electric and magnetic fields. Since BLP consists of two coupled phosphorene layers, it is of interest to examine the layer-dependent electronic properties of BLP QDs, such as the electronic distributions over the two layers and the so-produced…
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Using the tight-binding approach, we investigate the electronic properties of bilayer phosphorene (BLP) quantum dots (QDs) in the presence of perpendicular electric and magnetic fields. Since BLP consists of two coupled phosphorene layers, it is of interest to examine the layer-dependent electronic properties of BLP QDs, such as the electronic distributions over the two layers and the so-produced layer-polarization features, and to see how these properties are affected by the magnetic field and the bias potential. We find that in the absence of a bias potential only edge states are layer-polarized while the bulk states are not, and the layer-polarization degree (LPD) of the unbiased edge states increases with increasing magnetic field. However, in the presence of a bias potential both the edge and bulk states are layer-polarized, and the LPD of the bulk (edge) states depends strongly (weakly) on the interplay of the bias potential and the interlayer coupling. At high magnetic fields, applying a bias potential renders the bulk electrons in a BLP QD to be mainly distributed over the top or bottom layer, resulting in layer-polarized bulk Landau levels (LLs). In the presence of a large bias potential that can drive a semiconductor-to-semimetal transition in BLP, these bulk LLs exhibit different magnetic-field dependences, i.e., the zeroth LLs exhibit a linear-like dependence on the magnetic field while the other LLs exhibit a square-root-like dependence.
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Submitted 16 September, 2017;
originally announced September 2017.
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Tuning a Circular p-n Junction in Graphene from Quantum Confinement to Optical Guiding
Authors:
Yuhang Jiang,
Jinhai Mao,
Dean Moldovan,
Massoud Ramezani Masir,
Guohong Li,
Kenji Watanabe,
Takashi Taniguchi,
Francois M. Peeters,
Eva Y. Andrei
Abstract:
The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene electron-optics platform. An open question arising from the possibility of reducing the component-size to the nanometer-scale is how to access and understand the transitio…
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The motion of massless Dirac-electrons in graphene mimics the propagation of photons. This makes it possible to control the charge-carriers with components based on geometrical-optics and has led to proposals for an all-graphene electron-optics platform. An open question arising from the possibility of reducing the component-size to the nanometer-scale is how to access and understand the transition from optical-transport to quantum-confinement. Here we report on the realization of a circular p-n junction that can be continuously tuned from the nanometer-scale, where quantum effects are dominant, to the micrometer scale where optical-guiding takes over. We find that in the nanometer-scale junction electrons are trapped in states that resemble atomic-collapse at a supercritical charge. As the junction-size increases, the transition to optical-guiding is signaled by the emergence of whispering-gallery modes and Fabry-Perot interference. The creation of tunable junctions that straddle the crossover between quantum-confinement and optical-guiding, paves the way to novel design-architectures for controlling electronic transport.
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Submitted 20 May, 2017;
originally announced May 2017.
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Electric- and magnetic-field dependence of the electronic and optical properties of phosphorene quantum dots
Authors:
L. L. Li,
D. Moldovan,
W. Xu,
F. M. Peeters
Abstract:
Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectangular phosphorene quantum dots (RPQDs) in the presence of an in-plane electric field and a perpendicular magnetic field. The energy spectra and wave functions of RPQDs are obtained numerically using the tight-binding (TB…
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Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectangular phosphorene quantum dots (RPQDs) in the presence of an in-plane electric field and a perpendicular magnetic field. The energy spectra and wave functions of RPQDs are obtained numerically using the tight-binding (TB) approach. We find edge states within the band gap of the RPQD which are well separated from the bulk states. In an undoped RPQD and for in-plane polarized light, due to the presence of well-defined edge states, we find three types of optical transitions which are between the bulk states, between the edge and bulk states, and between the edge states. The electric and magnetic fields influence the bulk-to-bulk, edge-to-bulk, and edge-to-edge transitions differently due to the different responses of bulk and edge states to these fields.
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Submitted 23 December, 2016;
originally announced December 2016.
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Veselago lensing in graphene with a p-n junction: classical versus quantum effects
Authors:
S. P. Milovanovic,
D. Moldovan,
F. M. Peeters
Abstract:
The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations…
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The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface and different gate potential profiles. Furthermore, the influence of scattering by both short- and long-range impurities is considered.
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Submitted 8 September, 2015;
originally announced September 2015.
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Realization of a Tunable Artificial Atom at a Supercritically Charged Vacancy in Graphene
Authors:
Jinhai Mao,
Yuhang Jiang,
Dean Moldovan,
Guohong Li,
Kenji Watanabe,
Takashi Taniguchi,
Massoud Ramezani Masir,
Francois M. Peeters,
Eva Y. Andrei
Abstract:
The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic properties and to control its charge carriers. Here we show that a single atom vacancy in graphene can stably host a local charge and that this charge can be grad…
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The remarkable electronic properties of graphene have fueled the vision of a graphene-based platform for lighter, faster and smarter electronics and computing applications. One of the challenges is to devise ways to tailor its electronic properties and to control its charge carriers. Here we show that a single atom vacancy in graphene can stably host a local charge and that this charge can be gradually built up by applying voltage pulses with the tip of a scanning tunneling microscope (STM). The response of the conduction electrons in graphene to the local charge is monitored with scanning tunneling and Landau level spectroscopy, and compared to numerical simulations. As the charge is increased, its interaction with the conduction electrons undergoes a transition into a supercritical regime 6-11 where itinerant electrons are trapped in a sequence of quasi-bound states which resemble an artificial atom. The quasi-bound electron states are detected by a strong enhancement of the density of states (DOS) within a disc centered on the vacancy site which is surrounded by halo of hole states. We further show that the quasi-bound states at the vacancy site are gate tunable and that the trapping mechanism can be turned on and off, providing a new mechanism to control and guide electrons in graphene
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Submitted 13 April, 2016; v1 submitted 30 August, 2015;
originally announced August 2015.
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Electronic states in a graphene flake strained by a Gaussian bump
Authors:
D. Moldovan,
M. Ramezani Masir,
F. M. Peeters
Abstract:
The effect of strain in graphene is usually modeled by a pseudo-magnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance, which can be up to 25%. Here we investigate the pseudo-magnetic field generated by a Gaussian bump and we show that it exhibits significant differences with num…
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The effect of strain in graphene is usually modeled by a pseudo-magnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance, which can be up to 25%. Here we investigate the pseudo-magnetic field generated by a Gaussian bump and we show that it exhibits significant differences with numerical tight-binding results. Furthermore, we calculate the electronic states in the strained region for a hexagon shaped flake with armchair edges. We find that the six-fold symmetry of the wave functions inside the Gaussian bump is directly related to the different effect of strain along the fundamental directions of graphene: zigzag and armchair. Low energy electrons are strongly confined in the armchair directions and are localized on the carbon atoms of a single sublattice.
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Submitted 19 July, 2013;
originally announced July 2013.
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Resonant valley filtering of massive Dirac electrons
Authors:
D. Moldovan,
M. Ramezani Masir,
L. Covaci,
F. M. Peeters
Abstract:
Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses electron spin. We show how a double barrier structure consisting of electric and vector potentials can be used to filter massive Dirac electrons based on their vall…
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Electrons in graphene, in addition to their spin, have two pseudospin degrees of freedom: sublattice and valley pseudospin. Valleytronics uses the valley degree of freedom as a carrier of information similar to the way spintronics uses electron spin. We show how a double barrier structure consisting of electric and vector potentials can be used to filter massive Dirac electrons based on their valley index. We study the resonant transmission through a finite number of barriers and we obtain the energy spectrum of a superlattice consisting of electric and vector potentials. When a mass term is included the energy bands and energy gaps at the K and K' points are different and they can be tuned by changing the potential.
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Submitted 2 April, 2013;
originally announced April 2013.
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Pseudo magnetic field in strained graphene: revisited
Authors:
M. Ramezani Masir,
D. Moldovan,
F. M. Peeters
Abstract:
We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight-binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. T…
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We revisit the theory of the pseudo magnetic field as induced by strain in graphene using the tight-binding approach. A systematic expansion of the hopping parameter and the deformation of the lattice vectors is presented from which we obtain an expression for the pseudo magnetic field for low energy electrons. We generalize and discuss previous results and propose a novel effective Hamiltonian. The contributions of the different terms to the pseudo magnetic field expression is investigated for a model triaxial strain profile and are compared with the full solution. Our work suggests that the previous proposed pseudo magnetic field expression is valid up to reasonably high strain 15 % and there is no K-dependent pseudo-magnetic field.
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Submitted 26 April, 2013; v1 submitted 2 April, 2013;
originally announced April 2013.
