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First-Principles Insights into Excitonic and Electron-Phonon Effects in van der Waals Heterostructures
Authors:
Mohammad Ali Mohebpour,
Carmine Autieri,
Meysam Bagheri Tagani
Abstract:
Motivated by the successful synthesis of isolated ZrS2 and HfS2 transition metal dichalcogenide (TMD) monolayers and inspired by their nearly identical lattice constants, we construct and investigate a vertical ZrS2/HfS2 van der Waals (vdW) heterostructure. Using first-principles calculations based on density functional theory (DFT) and many-body perturbation theory (MBPT), we explore its electron…
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Motivated by the successful synthesis of isolated ZrS2 and HfS2 transition metal dichalcogenide (TMD) monolayers and inspired by their nearly identical lattice constants, we construct and investigate a vertical ZrS2/HfS2 van der Waals (vdW) heterostructure. Using first-principles calculations based on density functional theory (DFT) and many-body perturbation theory (MBPT), we explore its electronic, optical, and excitonic properties, with particular emphasis on excitonic effects and their temperature dependence. Based on the GW method, the ZrS2/HfS2 vdW heterostructure exhibits an indirect band gap of 2.60 eV with a Type-I band alignment. The optical gap of the heterostructure is found to be 2.64 eV, with an exciton binding energy of 0.71 eV, both reduced compared to those in the isolated monolayers. Moreover, we investigate the temperature-dependent optoelectronic behavior of the heterostructure, considering electron-phonon coupling. A zero-point renormalization of 0.04 eV in the direct band gap is observed. While the direct band gap decreases monotonically with temperature from 0 K to 400 K, the indirect band gap displays a non-monotonic trend. As a result, the absorption spectrum undergoes a meaningful redshift with increasing temperature. At room temperature, the optical gap of the heterostructure is reduced to 2.51 eV and the exciton binding energy to 0.63 eV. Our findings highlight the important role of electron-phonon interaction in the optoelectronic response of ZrS2/HfS2 vdW heterostructure, supporting its use in high-performance optoelectronic devices.
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Submitted 30 June, 2025;
originally announced June 2025.
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Origin and properties of the flat band in NbOCl2 monolayer
Authors:
Mohammad Ali Mohebpour,
Sahar Izadi Vishkayi,
Valerio Vitale,
Nicola Seriani,
Meysam Bagheri Tagani
Abstract:
The existence of a flat band near the Fermi level can be a suitable platform for the emergence of interesting phenomena in condensed matter physics. Recently, NbOCl2 monolayer has been experimentally synthesized [Nature 613 (2023) 53], which has a flat and isolated valence band. We show that monolayers based on other elements of group 5 of the periodic table, including the V and Ta atoms, also hav…
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The existence of a flat band near the Fermi level can be a suitable platform for the emergence of interesting phenomena in condensed matter physics. Recently, NbOCl2 monolayer has been experimentally synthesized [Nature 613 (2023) 53], which has a flat and isolated valence band. We show that monolayers based on other elements of group 5 of the periodic table, including the V and Ta atoms, also have a flat band. Motivated by the recent experiment, we investigate the origin of the flat band as well as the electronic, optical, photocatalytic, and magnetic properties of the monolayer by combining density functional theory and many-body quantum perturbation theory. Our results show that the flat and isolated band of this monolayer is caused by the interplay between the Peierls distortion and the electronic configuration of Nb atoms. The investigation of the bandwidth of the monolayer under the biaxial and uniaxial strains reveals that this material can be grown on substrates with a larger lattice constant by maintaining the flat band.
Examining the material's response to the linearly polarized light not only reveals the presence of weak optical anisotropy, but also shows the existence of a bright exciton with a binding energy of about 0.94 eV. Hole doping can result in a flat band-induced phase transition from semiconductor to ferromagnet. By adjusting the amount of doping, a bipolar magnetic semiconductor or a half-metal can be created. The interaction between the nearest Nb atoms is ferromagnetic, while an antiferromagnetic interaction appears between the second neighbors, which grows significantly with increasing doping. Our results demonstrate that NbOCl2 monolayer has suitable potential for spintronic applications in addition to electronic and optoelectronic applications.
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Submitted 12 July, 2024;
originally announced July 2024.
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Optoelectronic properties of the CuI, AgI and Janus Cu2BrI, and Ag2BrI monolayers by many-body perturbation theory
Authors:
Mohammad Ali Mohebpour,
Bohayra Mortazavi,
Xiaoying Zhuang,
Meysam Bagheri Tagani
Abstract:
In an outstanding experimental advance in the field of two-dimensional nanomaterials, cuprous iodide (CuI) and silver iodide (AgI) monolayers have been grown via a novel graphene encapsulation synthesis approach [Adv.Mater.2022, 34, 2106922]. Inspired by this accomplishment, we conduct first-principles calculations to investigate the elastic, phononic thermal transport, electronic, and optical pro…
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In an outstanding experimental advance in the field of two-dimensional nanomaterials, cuprous iodide (CuI) and silver iodide (AgI) monolayers have been grown via a novel graphene encapsulation synthesis approach [Adv.Mater.2022, 34, 2106922]. Inspired by this accomplishment, we conduct first-principles calculations to investigate the elastic, phononic thermal transport, electronic, and optical properties of the native CuI and AgI and Janus Cu2BrI and Ag2BrI monolayers. Electronic and excitonic optical properties are elaborately studied using the many-body perturbation theory on the basis of GW approximation. Our results indicate that these novel systems are stable but with soft elastic modulus and ultralow lattice thermal conductivity. It is also shown that the studied monolayers are wide-gap semiconductors with exciton binding energies close to 1 eV. The effects of mechanical straining and electric field on the resulting electronic and optical properties are also analyzed. The presented first-principles results provide a deep understanding of the stability, phononic transport, and tunable optoelectronic properties of the native CuI and AgI and Janus Cu2BrI and Ag2BrI monolayers, which can serve as a guide for the oncoming studies.
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Submitted 21 April, 2022;
originally announced April 2022.
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Mechanical, optical, and thermoelectric properties of semiconducting ZnIn2X4 (X= S, Se, Te) monolayers
Authors:
Mohammad Ali Mohebpour,
Bohayra Mortazavi,
Timon Rabczuk,
Xiaoying Zhuang,
Alexander V. Shapeev,
Meysam Bagheri Tagani
Abstract:
Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical properties achieved from the solution of the Bethe-Salpeter equation predict the exciton binding energy of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers to be 0.…
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Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical properties achieved from the solution of the Bethe-Salpeter equation predict the exciton binding energy of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers to be 0.51, 0.41, and 0.34 eV, respectively, suggesting the high stability of the excitonic states against thermal dissociation. Using the iterative solutions of the Boltzmann transport equation accelerated by machine learning interatomic potentials, the room-temperature lattice thermal conductivity of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers is predicted to be remarkably low as 5.8, 2.0, and 0.4 W/mK, respectively. Due to the low lattice thermal conductivity, high thermopower, and large figure of merit, we propose the ZnIn2Se4 and ZnIn2Te4 monolayers as promising candidates for thermoelectric energy conversion systems. This study provides an extensive vision concerning the intrinsic physical properties of the ZnIn2X4 nanosheets and highlights their characteristics for energy conversion and optoelectronics applications.
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Submitted 26 February, 2022;
originally announced February 2022.
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Electronic and Excitonic Properties of Semi-Hydrogenated Borophene Sheets
Authors:
Mohammad Ali Mohebpour,
Shobair Mohammadi Mozvashi,
Sahar Izadi Vishkayi,
Meysam Bagheri Tagani
Abstract:
Borophene has triggered a surge of interest due to its outstanding properties including mechanical flexibility, polymorphism, and opto-electrical anisotropy. Very recently, a novel semi-hydrogenated borophene, called $α'$-4H, was synthesized in large-scale freestanding samples, which exhibits excellent air-stability and semiconducting nature. Herein, using the density functional theory (DFT) and m…
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Borophene has triggered a surge of interest due to its outstanding properties including mechanical flexibility, polymorphism, and opto-electrical anisotropy. Very recently, a novel semi-hydrogenated borophene, called $α'$-4H, was synthesized in large-scale freestanding samples, which exhibits excellent air-stability and semiconducting nature. Herein, using the density functional theory (DFT) and many-body perturbation theory (MBPT), we investigate the electronic and excitonic optical properties of $α'$-4H borophene. The DFT results reveal that by breaking the mirror symmetry and increasing the buckling height of pure $α'$-borophene, hydrogenation causes an orbital hybridization and opens an indirect band gap of 1.49 eV in $α'$-4H borophene. This value is corrected to be 1.98, 2.23, and 2.52 eV under the G0W0, GW0, and GW levels of theory, respectively. The optical spectrum achieved from solving the Bethe-Salpeter equation shows an optical band gap of 2.40 eV, which corresponds to a strongly bound and stable bright exciton with a binding energy of 1.18 eV. More importantly, the excitonic states are robust against tension up to 10%, where the monolayer is dynamically stable. We also design and study the bilayer $α'$-4H borophene with different stackings. For the weak van der Waals interactions between the layers, the bilayer can preserve most of the structural and electronic properties of the monolayer. Our study exposes the underlying physics behind the structural, electronic, and optical properties of $α'$-4H borophene and suggests it as a very promising candidate for flexible optoelectronic applications.
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Submitted 3 July, 2021;
originally announced July 2021.
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Prediction of group IV-V hexagonal binary monolayers
Authors:
Mohammad Ali Mohebpour,
Shobair Mohammadi Mozvashi,
Sahar Izadi Vishkayi,
Meysam Bagheri Tagani
Abstract:
Group IV and V monolayers are very crucial 2D materials for their high carrier mobilities, tunable band gaps, and optical linear dichroism. Very recently, a novel group IV-V binary compound, Sn2Bi, has been synthesized on silicon substrate, and has shown very interesting electronic properties. Further investigations have revealed that the monolayer would be stable in freestanding form by hydrogena…
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Group IV and V monolayers are very crucial 2D materials for their high carrier mobilities, tunable band gaps, and optical linear dichroism. Very recently, a novel group IV-V binary compound, Sn2Bi, has been synthesized on silicon substrate, and has shown very interesting electronic properties. Further investigations have revealed that the monolayer would be stable in freestanding form by hydrogenation. Inspired by this, by means of first-principles calculations, we systematically predict and investigate eight counterparts of Sn2Bi, namely Si2P, Si2As, Si2Sb, Si2Bi, Ge2P, Ge2As, Ge2Sb, and Ge2Bi. The cohesive energies, phonon dispersions, and AIMD calculations show that, similar to Sn2Bi, all of these freestanding monolayers are stable in hydrogenated form. These hydrogenated monolayers are semiconductors with wide band gaps, which are favorable for opto-electronic purposes. The Si2YH2 and Ge2YH2 structures possess indirect and direct band gaps, respectively. They represent very interesting optical characteristics, such as good absorption in the visible region and linear dichroism, which are crucial for solar cell and beam-splitting devices, respectively. Finally, the Si2SbH2 and Si2BiH2 monolayers have suitable band gaps and band edge positions for photocatalytic water splitting. Summarily, our investigations offer very interesting and promising properties for this family of binary compounds. We hope that our predictions open ways to new experimental studies and fabrication of suitable 2D materials for next generation opto-electronic and photocatalytic devices.
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Submitted 22 November, 2020; v1 submitted 21 March, 2020;
originally announced March 2020.
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Tuning electronic and optical properties of free-standing Sn2Bi monolayer stabilized by hydrogenation
Authors:
Mohammad Ali Mohebpour,
Sahar Izadi Vishkayi,
Meysam Bagheri Tagani
Abstract:
In this study, we systematically investigated the structural, mechanical, electronic and optical properties of Sn2Bi monolayer, a sheet experimentally synthesized recently [PRL, 121, 126801 (2018)] which has been hydrogenated (Sn2BiH2) to stabilize free-standing form using density functional theory (DFT). For tuning the band structure and electronic properties, the mechanical strain and electric f…
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In this study, we systematically investigated the structural, mechanical, electronic and optical properties of Sn2Bi monolayer, a sheet experimentally synthesized recently [PRL, 121, 126801 (2018)] which has been hydrogenated (Sn2BiH2) to stabilize free-standing form using density functional theory (DFT). For tuning the band structure and electronic properties, the mechanical strain and electric field are used. Our investigations show that in this free-standing sample, there are electron flat bands and free hole bands like the recently synthesized sample on silicon wafer, which provide the possibility of having strongly localized electrons and free holes with high mobility. Also, the band gap of Sn2BiH2 monolayer has experienced a growth of 80% compared with the experimental sample. The relevant results to strain suggest that the band gap can be properly manipulated by biaxial strain (-13% to +21%) within a range from 0.2 to 1.6 eV. It should be mentioned that the stability and flexibility of the corresponding monolayer under tensile and compressive strain are due to the strong σ bonds between atoms. We also realized the strain can cause indirect-direct transition in the band gap. Furthermore, our optical findings indicate that the Sn2BiH2 monolayer has almost metallic properties in a specific range of UV spectrum and it is transparent in the IR and visible spectrum of electromagnetic radiation. All these tunable properties and nontrivial features portend that Sn2BiH2 monolayer has great potentials in applications as near-infrared detectors, thermoelectric devices, field-effect transistors, sensors, photocatalysis, energy harvesting, and optoelectronics.
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Submitted 11 August, 2019;
originally announced August 2019.
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DFT analysis and FDTD simulation of CH3NH3PbI3-xClx mixed halide perovskite solar cells: role of halide mixing and light trapping technique
Authors:
Mohaddeseh Saffari,
Mohammad Ali Mohebpour,
Hamid Rahimpour Soleimani,
Meysam Bagheri Tagani
Abstract:
Since perovskite solar cells have attracted a lot of attentions over the past years, the enhancement of their optical absorption and current density are among the basic coming challenges. For this reason, first, we have studied structural and optical properties of organic-inorganic hybrid halide perovskite CH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in the cubic phase by…
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Since perovskite solar cells have attracted a lot of attentions over the past years, the enhancement of their optical absorption and current density are among the basic coming challenges. For this reason, first, we have studied structural and optical properties of organic-inorganic hybrid halide perovskite CH3NH3PbI3 and the compounds doped by chlorine halogen CH3NH3PbI3-xClx in the cubic phase by using density functional theory (DFT). Then, we investigate the light absorption efficiency and optical current density of the single-junction perovskite solar cell CH3NH3PbI3-xClx for the values (x=0,1,2,3) by utilizing optical constants (n,k) resulted from these calculations. The results suggest that increasing the amount of chlorine in the CH3NH3PbI3-xClx compound leads an increase in bandgap energy, as well as a decrease in lattice constants and optical properties like refractive index and extinction coefficient of the structure. Also, the results obtained by simulation express that by taking advantage of light trapping techniques of SiO2, a remarkable increase of light absorption will be achieved to the magnitude of 83.13%, which is noticeable.
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Submitted 21 April, 2017;
originally announced April 2017.
