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Temperature dependence study of water dynamics in Fluorohectorite clays using Molecular dynamics simulations
Authors:
H. O. Mohammed,
K. N. Nigussa
Abstract:
In this work, we have carried out molecular dynamics (MD) simulation techniques to study the diffusion coefficient of interlayer molecules at different temperature. Within the wider context of water dynamics in soils, and with a particular emphasis on clays, we present here the translational dynamics of water in clays, in a bi-hydrated states. We focus on temperatures between 293 K and 350 K, i.e.…
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In this work, we have carried out molecular dynamics (MD) simulation techniques to study the diffusion coefficient of interlayer molecules at different temperature. Within the wider context of water dynamics in soils, and with a particular emphasis on clays, we present here the translational dynamics of water in clays, in a bi-hydrated states. We focus on temperatures between 293 K and 350 K, i.e., the range relevant to the environmental waste packages. A natural hectorite clay of interest is modified as a synthetic clay, which allows us to understand the determinantal parameters from MD simulations through a comparison with the experimental values. The activation energy E a determined by our simulation is [8.50 - 16.62] KJ/mol. The calculated diffusive constants are in the order of 10^{-5} {cm^{2}}/s. The simulation results are in good agreement with experiments for the relevant set of conditions, and they give more insight into the origin of the observed dynamics.
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Submitted 22 March, 2023; v1 submitted 15 March, 2023;
originally announced March 2023.
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Domain Wall Propagation and Pinning Induced by Current Pulses in Cylindrical Modulated Nanowires
Authors:
C. Bran,
J. A. Fernandez-Roldan,
J. A. Moreno,
A. Fraile Rodríguez,
R. P. del Real,
A. Asenjo,
E. Saugar,
J. Marqués-Marchán,
H. Mohammed,
M. Foerster,
L. Aballe,
J. Kosel,
M. Vazquez,
O. Chubykalo-Fesenko
Abstract:
The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnet…
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The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports exist in cylindrical geometry, where Bloch point domain walls are expected to have intriguing properties. Here we report this investigation in cylindrical magnetic Ni nanowires with geometrical notches. Experimental work based on synchrotron X-ray magnetic circular dichroism (XMCD) combined with photoemission electron microscopy (PEEM) indicates that large current densities induce domain wall nucleation while smaller currents move domain walls preferably against the current direction. In the region where no pinning centers are present we found domain wall velocity of about 1 km/s. The domain wall motion along current was also detected in the vicinity of the notch region. Pinning of domain walls has been observed not only at geometrical constrictions but also outside of them. Thermal modelling indicates that large current densities temporarily raise the temperature in the nanowire above the Curie temperature leading to nucleation of domain walls during the system cooling. Micromagnetic modelling with spin-torque effect shows that for intermediate current densities Bloch point domain walls with chirality parallel to the Oersted field propagate antiparallel to the current direction. In other cases, domain walls can be bounced from the notches and/or get pinned outside their positions. We thus find that current is not only responsible for the domain wall propagation but is also a source of pinning due to the Oersted field action.
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Submitted 4 October, 2022;
originally announced October 2022.
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Polymer Modelling Predicts Chromosome Reorganisation in Senescence
Authors:
Michael Chiang,
Davide Michieletto,
Chris A. Brackley,
Nattaphon Rattanavirotkul,
Hisham Mohammed,
Davide Marenduzzo,
Tamir Chandra
Abstract:
Lamina-associated domains (LADs) cover a large part of the human genome and are thought to play a major role in shaping the nuclear architectural landscape. Here, we perform polymer simulations, microscopy and mass spectrometry to dissect the roles played by heterochromatin- and lamina-mediated interactions in nuclear organisation. Our model explains the conventional organisation of heterochromati…
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Lamina-associated domains (LADs) cover a large part of the human genome and are thought to play a major role in shaping the nuclear architectural landscape. Here, we perform polymer simulations, microscopy and mass spectrometry to dissect the roles played by heterochromatin- and lamina-mediated interactions in nuclear organisation. Our model explains the conventional organisation of heterochromatin and euchromatin in growing cells and the pathological organisation found in oncogene-induced senescence and progeria. We show that the experimentally observed changes in the locality of contacts in senescent and progeroid cells can be explained as arising due to phase transitions in the system. Within our simulations LADs are highly stochastic, as in experiments. Our model suggests that, once established, the senescent phenotype should be metastable even if lamina-mediated interactions were reinstated. Overall, our simulations uncover a generic physical mechanism that can regulate heterochromatin segregation and LAD formation in a wide range of mammalian nuclei.
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Submitted 19 October, 2020;
originally announced October 2020.
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Controlled spin-torque driven domain wall motion using staggered magnetic nanowires
Authors:
H. Mohammed,
S. Al Risi,
T. L. Jin3 J. Kosel,
S. N. Piramanayagam,
R. Sbiaa
Abstract:
The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using sp…
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The growing demand for storage, due to big data applications, cannot be met by hard disk drives. Domain wall (DW) memory devices such as racetrack memory offer an alternative route to achieve high capacity storage. In DW memory, control of domain wall positions and their motion using spin-transfer torque are important challenges. In this paper, we demonstrate controlled domain wall motion using spin-transfer torque in staggered magnetic nanowires. The devices, fabricated using electron-beam lithography, were tested using a magneto-optical Kerr microscopy and electrical transport measurements. The depinning current, pinning potential and thermal stability were found to depend on the device dimensions of the staggering nanowires. Thus, the proposed staggering configuration helps to fine-tune the properties of domain wall devices for memory applications.
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Submitted 25 August, 2019;
originally announced August 2019.
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Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications
Authors:
Hanan Mohammed,
Hector Corte-León,
Yurii P. Ivanov,
Sergei Lopatin,
Julian A. Moreno,
Andrey Chuvilin,
Akshaykumar Salimath,
Aurelien Manchon,
Olga Kazakova,
Jurgen Kosel
Abstract:
A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domai…
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A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.
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Submitted 18 April, 2018;
originally announced April 2018.
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High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments
Authors:
Selma. Amara,
Gallo. A. Torres Sevilla,
Mayyada. Hawsawi,
Yousof. Mashraei,
Hanan . Mohammed,
Melvin E. Cruz,
Yurii. P. Ivanov,
Samridh. Jaiswal,
Gerhard. Jakob,
Mathias. Kläui,
Muhammad. Hussain,
Jurgen. Kosel
Abstract:
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this prog…
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Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first choice, due to their high sensitivity, low power consumption etc. MTJs are also promising candidates for non-volatile next-generation data storage media and, hence, could become central components of wearable electronic devices. In this work, a generic low-cost regenerative batch fabrication process is utilized to transform rigid MTJs on a 500 μm silicon wafer substrate into 5 μm thin, mechanically flexible silicon devices, and ensuring optimal utilization of the whole substrate. This method maintains the outstanding magnetic properties, which are only obtained by deposition of the MTJ on smooth high-quality silicon wafers. The flexible MTJs are highly reliable and resistive to mechanical stress. Bending of the MTJ stacks with a diameter as small as 500 μm is possible without compromising their performance and an endurance of over 1000 cycles without fatigue has been demonstrated. The flexible MTJs were mounted onto the tip of a cardiac catheter with 2 mm in diameter without compromising their performance. This enables the detection of magnetic fields and the angle which they are applied at with a high sensitivity of 4.93 %/Oe and a low power consumption of 0.15 μW, while adding only 8 μg and 15 μm to the weight and diameter of the catheter, respectively.
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Submitted 4 April, 2018;
originally announced April 2018.
