Polarization induced water molecule dissociation below the first-order electronic-phase transition temperature
Authors:
Andrew Das Arulsamy,
Zlatko Kregar,
Kristina Elersic,
Martina Modic,
Uma Shankar Subramani
Abstract:
Hydrogen produced from the photocatalytic splitting of water is one of the reliable alternatives to replace the polluting fossil and the radioactive nuclear fuels. Here, we provide unequivocal evidence for the existence of blue- and red-shifting O$-$H covalent bonds within a single water molecule adsorbed on MgO surface as a result of asymmetric displacement polarizabilities. The adsorbed H-O-H on…
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Hydrogen produced from the photocatalytic splitting of water is one of the reliable alternatives to replace the polluting fossil and the radioactive nuclear fuels. Here, we provide unequivocal evidence for the existence of blue- and red-shifting O$-$H covalent bonds within a single water molecule adsorbed on MgO surface as a result of asymmetric displacement polarizabilities. The adsorbed H-O-H on MgO gives rise to one weaker H-O bond, while the other O-H covalent bond from the same adsorbed water molecule compensates this effect with a stronger bond. The weaker bond (nearest to the surface), the interlayer tunneling electrons and the silver substrate are shown to be the causes for the smallest dissociative activation energy on MgO monolayer. The origin that is responsible to initiate the splitting mechanism is proven to be due to the changes in the polarizability of an adsorbed water molecule, which are further supported by the temperature-dependent static dielectric constant measurements for water below the first-order electronic-phase transition temperature.
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Submitted 25 June, 2011; v1 submitted 6 January, 2011;
originally announced January 2011.
Reversible carrier-type transition in gas-sensing oxides and nanostructures
Authors:
Andrew Das Arulsamy,
Kristina Elersic,
Martina Modic,
Uros Cvelbar,
Miran Mozetic
Abstract:
Despite many important applications of a-Fe2O3 and Fe doped SnO2 in semiconductors, catalysis, sensors, clinical diagnosis and treatments, one fundamental issue that is crucial to these applications remains theoretically equivocal- the reversible carrier-type transition between n- and p-type conductivities during gas-sensing operations. Here, we give unambiguous and rigorous theoretical analysis i…
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Despite many important applications of a-Fe2O3 and Fe doped SnO2 in semiconductors, catalysis, sensors, clinical diagnosis and treatments, one fundamental issue that is crucial to these applications remains theoretically equivocal- the reversible carrier-type transition between n- and p-type conductivities during gas-sensing operations. Here, we give unambiguous and rigorous theoretical analysis in order to explain why and how the oxygen vacancies affect the n-type semiconductors, a-Fe2O3 and Fe doped SnO2 in which they are both electronically and chemically transformed into a p-type semiconductor. Furthermore, this reversible transition also occurs on the oxide surfaces during gas-sensing operation due to physisorbed gas molecules (without any chemical reaction). We make use of the ionization energy theory and its renormalized ionic displacement polarizability functional to reclassify, generalize and to explain the concept of carrier-type transition in solids, and during gas-sensing operation. The origin of such a transition is associated to the change in ionic polarizability and the valence states of cations in the presence of (a) oxygen vacancies and (b) physisorped gas molecules.
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Submitted 30 August, 2010; v1 submitted 28 June, 2010;
originally announced June 2010.
