Showing 1–50 of 55 results for author: Miwa, J A

Multi Moire Networks in Engineered Lateral Hetero-Bilayers: Programmable Phononic Reconfiguration and Second Harmonic Generation

Authors: Suman Kumar Chakraborty, Frederico B. Sousa, Chakradhar Sahoo, Indrajeet Dhananjay Prasad, Shneha Biswas, Purbasha Ray, Biswajeet Nayak, Rafael Rojas, Baisali Kundu, Alfred J. H. Jones, Jill A. Miwa, Søren Ulstrup, Sudipta Dutta, Santosh Kumar, Leandro M. Malard, Gopal K. Pradhan, Prasana Kumar Sahoo

Abstract: Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable mul… ▽ More Moire engineering in two-dimensional transition metal dichalcogenides enables access to correlated quantum phenomena. Realizing such effects demands simultaneous control over twist angle and material composition to modulate phonons, excitons, and their interactions. However, most studies rely on exfoliated flakes, limiting scalability and systematic exploration. Here, we demonstrate a scalable multi-moire network by vertically stacking CVD-grown monolayer lateral heterostructures. Signatures of moire non-rigidity, including phonon frequency softening, linewidth broadening, and strain localization, are attributed to two lattice relaxation modes; rotational reconstruction and volumetric dilation. Micro-angle-resolved photoemission spectroscopy reveals that interfacial orbital interactions modulate interlayer coupling. At aligned angles, molybdenum diselenides exhibit reduced valley polarization and Davydov splitting, indicating strain-induced symmetry breaking and chiral phonon effects. Notably, SHG modulation was obderved with variation in twist angle due to lower coherence and band-offset-driven phase delay. First-principles calculations support these findings. This work provides a route to programmable, scalable multi-moire platforms for opto-straintronics, quantum sensing, and on-chip photonics. △ Less

Submitted 2 May, 2025; originally announced May 2025.

Quasiparticle gap renormalization driven by internal and external screening in WS$_2$ device

Authors: Chakradhar Sahoo, Yann in 't Veld, Alfred J. H. Jones, Zhihao Jiang, Greta Lupi, Paulina E. Majchrzak, Kimberly Hsieh, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Jill A. Miwa, Yong P. Chen, Malte Rösner, Søren Ulstrup

Abstract: The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in s… ▽ More The electronic band gap of a two-dimensional semiconductor within a device architecture is sensitive to variations in screening properties of adjacent materials in the device and to gate-controlled doping. Here, we employ micro-focused angle resolved photoemission spectroscopy to separate band gap renormalization effects stemming from environmental screening and electron-doping during \textit{in situ} gating of a single-layer WS$_{2}$ device. The WS$_{2}$ is supported on hBN and contains a section that is exposed to vacuum and another section that is encapsulated by a graphene contact. We directly observe the doping-induced semiconductor-metal transition and band gap renormalization in the two sections of WS$_2$. Surprisingly, a larger band gap renormalization is observed in the vacuum-exposed section than in the graphene-encapsulated - and thus ostensibly better screened - section of the WS$_2$. Using $GW$ calculations, we determine that intrinsic screening due to stronger doping in vacuum exposed WS$_2$ exceeds the external environmental screening in graphene-encapsulated WS$_2$. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: 29 pages, 12 figures (4 figures in main text and 8 figures in supporting information)

Optical switching in a layered altermagnet

Authors: Alessandro De Vita, Chiara Bigi, Davide Romanin, Matthew D. Watson, Vincent Polewczyk, Marta Zonno, François Bertran, My Bang Petersen, Federico Motti, Giovanni Vinai, Manuel Tuniz, Federico Cilento, Mario Cuoco, Brian M. Andersen, Andreas Kreisel, Luciano Jacopo D'Onofrio, Oliver J. Clark, Mark T. Edmonds, Christopher Candelora, Muxian Xu, Siyu Cheng, Alexander LaFleur, Tommaso Antonelli, Giorgio Sangiovanni, Lorenzo Del Re , et al. (13 additional authors not shown)

Abstract: Altermagnetism defies conventional classifications of collinear magnetic phases, standing apart from ferromagnetism and antiferromagnetism with its unique combination of spin-dependent symmetries, net-zero magnetization, and anomalous Hall transport. Although altermagnetic states have been realized experimentally, their integration into functional devices has been hindered by the structural rigidi… ▽ More Altermagnetism defies conventional classifications of collinear magnetic phases, standing apart from ferromagnetism and antiferromagnetism with its unique combination of spin-dependent symmetries, net-zero magnetization, and anomalous Hall transport. Although altermagnetic states have been realized experimentally, their integration into functional devices has been hindered by the structural rigidity and poor tunability of existing materials. First, through cobalt intercalation of the superconducting 2H-NbSe$_2$ polymorph, we induce and stabilize a robust altermagnetic phase and using both theory and experiment, we directly observe the lifting of Kramers degeneracy. Then, using ultrafast laser pulses, we demonstrate how the low temperature phase of this system can be quenched, realizing the first example of an optical altermagnetic switch. While shedding light on overlooked aspects of altermagnetism, our findings open pathways to spin-based technologies and lay a foundation for advancing the emerging field of altertronics. △ Less

Submitted 27 February, 2025; originally announced February 2025.

Anomalous spin-optical helical effect in Ti-based kagome metal

Authors: Federico Mazzola, Wojciech Brzezicki, Chiara Bigi, Armando Consiglio, Luciano Jacopo D' Onofrio, Maria Teresa Mercaldo, Adam Kłosiński, François Bertran, Patrick Le Fèvre, Oliver J. Clark, Mark T. Edmonds, Manuel Tuniz, Alessandro De Vita, Vincent Polewczyk, Jeppe B. Jacobsen, Henrik Jacobsen, Jill A. Miwa, Justin W. Wells, Anupam Jana, Ivana Vobornik, Jun Fujii, Niccolò Mignani, Narges Samani Tarakameh, Alberto Crepaldi, Giorgio Sangiovanni , et al. (10 additional authors not shown)

Abstract: The kagome lattice stands as a rich platform for hosting a wide array of correlated quantum phenomena, ranging from charge density waves and superconductivity to electron nematicity and loop current states. Direct detection of loop currents in kagome systems has remained a formidable challenge due to their intricate spatial arrangements and the weak magnetic field signatures they produce. This has… ▽ More The kagome lattice stands as a rich platform for hosting a wide array of correlated quantum phenomena, ranging from charge density waves and superconductivity to electron nematicity and loop current states. Direct detection of loop currents in kagome systems has remained a formidable challenge due to their intricate spatial arrangements and the weak magnetic field signatures they produce. This has left their existence and underlying mechanisms a topic of intense debate. In this work, we uncover a hallmark reconcilable with loop currents: spin handedness-selective signals that surpass conventional dichroic, spin, and spin-dichroic responses. We observe this phenomenon in the kagome metal CsTi$_3$Bi$_5$ and we call it the anomalous spin-optical helical effect. This effect arises from the coupling of light' s helicity with spin-orbital electron correlations, providing a groundbreaking method to visualize loop currents in quantum materials. Our discovery not only enriches the debate surrounding loop currents but also paves the way for new strategies to exploit the electronic phases of quantum materials via light-matter interaction. △ Less

Submitted 26 February, 2025; originally announced February 2025.

Bilayer orthogonal ferromagnetism in CrTe$_2$-based van der Waals system

Authors: Chiara Bigi, Cyriack Jego, Vincent Polewczyk, Alessandro De Vita, Thomas Jaouen, Hulerich C. Tchouekem, François Bertran, Patrick Le Fèvre, Pascal Turban, Jean-François Jacquot, Jill A. Miwa, Oliver J. Clark, Anupam Jana, Sandeep Kumar Chaluvadi, Pasquale Orgiani, Mario Cuoco, Mats Leandersson, Thiagarajan Balasubramanian, Thomas Olsen, Younghun Hwang, Matthieu Jamet, Federico Mazzola

Abstract: Systems with pronounced spin anisotropy play a pivotal role in advancing magnetization switching and spin-wave generation mechanisms, which are fundamental for spintronic technologies. Quasi-van der Waals ferromagnets, particularly Cr$_{1+δ}$Te$_2$ compounds, represent seminal materials in this field, renowned for their delicate balance between frustrated layered geometries and magnetism. Despite… ▽ More Systems with pronounced spin anisotropy play a pivotal role in advancing magnetization switching and spin-wave generation mechanisms, which are fundamental for spintronic technologies. Quasi-van der Waals ferromagnets, particularly Cr$_{1+δ}$Te$_2$ compounds, represent seminal materials in this field, renowned for their delicate balance between frustrated layered geometries and magnetism. Despite extensive investigation, the precise nature of their magnetic ground state, typically described as a canted ferromagnet, remains contested, as does the mechanism governing spin reorientation under external magnetic fields and varying temperatures. In this work, we leverage a multimodal approach, integrating complementary techniques, to reveal that Cr$_{1+δ}$Te$_2$ ($δ= 0.25 - 0.50$) hosts a previously overlooked magnetic phase, which we term orthogonal-ferromagnetism. This single phase consists of alternating atomically sharp single layers of in-plane and out-of-plane ferromagnetic blocks, coupled via exchange interactions and as such, it differs significantly from crossed magnetism, which can be achieved exclusively by stacking multiple heterostructural elements together. Contrary to earlier reports suggesting a gradual spin reorientation in CrTe$_2$-based systems, we present definitive evidence of abrupt spin-flop-like transitions. This discovery, likely due to the improved crystallinity and lower defect density in our samples, repositions Cr$_{1+δ}$Te$_2$ compounds as promising candidates for spintronic and orbitronic applications, opening new pathways for device engineering. △ Less

Submitted 13 December, 2024; originally announced December 2024.

Journal ref: Nat Commun 16, 4495 (2025)

Pomeranchuk instability from electronic correlations in CsTi$_3$Bi$_5$ kagome metal

Authors: Chiara Bigi, Matteo Dürrnagel, Lennart Klebl, Armando Consiglio, Ganesh Pokharel, Francois Bertran, Patrick Le Févre, Thomas Jaouen, Hulerich C. Tchouekem, Pascal Turban, Alessandro De Vita, Jill A. Miwa, Justin W. Wells, Dongjin Oh, Riccardo Comin, Ronny Thomale, Ilija Zeljkovic, Brenden R. Ortiz, Stephen D. Wilson, Giorgio Sangiovanni, Federico Mazzola, Domenico Di Sante

Abstract: Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Recently, this behavior has been identified in CsTi$_3$Bi$_5$, a member of the AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome family, recognized for its intricate and unconven… ▽ More Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Recently, this behavior has been identified in CsTi$_3$Bi$_5$, a member of the AV$_3$Sb$_5$ (A = K, Rb, Cs) kagome family, recognized for its intricate and unconventional quantum phases. Despite accumulating indirect evidence, the fundamental mechanisms driving nematicity in CsTi$_3$Bi$_5$ remain inadequately understood, sparking ongoing debates. In this study, we employ polarization-dependent angle-resolved photoemission spectroscopy to reveal definitive signatures of an orbital-selective nematic deformation in the electronic structure of CsTi$_3$Bi$_5$. This direct experimental evidence underscores the pivotal role of orbital degrees of freedom in symmetry breaking, providing new insights into the complex electronic environment. By applying the functional renormalization group technique to a fully interacting ab initio model, we demonstrate the emergence of a finite angular momentum ($d$-wave) Pomeranchuk instability in CsTi$_3$Bi$_5$, driven by the concomitant action of electronic correlations within specific orbital channels and chemical potential detuning away from Van Hove singularities. By elucidating the connection between orbital correlations and symmetry-breaking instabilities, this work lays a crucial foundation for future investigations into the broader role of orbital selectivity in quantum materials, with far-reaching implications for the design and manipulation of novel electronic phases. △ Less

Submitted 30 October, 2024; originally announced October 2024.

Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers

Authors: Frode S. Strand, Simon P. Cooil, Quinn T. Campbell, John J. Flounders, Håkon I. Røst, Anna Cecilie Åsland, Alv Johan Skarpeid, Marte P. Stalsberg, Jinbang Hu, Johannes Bakkelund, Victoria Bjelland, Alexei B. Preobrajenski, Zheshen Li, Marco Bianchi, Jill A. Miwa, Justin W. Wells

Abstract: We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle… ▽ More We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications. △ Less

Submitted 22 October, 2024; originally announced October 2024.

A Metastable Pentagonal 2D Material Synthesized by Symmetry-Driven Epitaxy

Authors: Lina Liu, Yujin Ji, Marco Bianchi, Saban M. Hus, Zheshen Li, Richard Balog, Jill A. Miwa, Philip Hofmann, An-ping Li, Dmitry Y. Zemlyanov, Youyong Li, Yong P. Chen

Abstract: Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe2, are lower in energy in pentagonal phases and exhibit pentagons as building blocks. While theory has predicted a large number of pentagonal 2D materials, many of them are metastable and their experimental realization is difficult. Here we report the success… ▽ More Most two-dimensional (2D) materials experimentally studied so far have hexagons as their building blocks. Only a few exceptions, such as PdSe2, are lower in energy in pentagonal phases and exhibit pentagons as building blocks. While theory has predicted a large number of pentagonal 2D materials, many of them are metastable and their experimental realization is difficult. Here we report the successful synthesis of a metastable pentagonal 2D material, the monolayer pentagonal PdTe2, by symmetry-driven epitaxy. Scanning tunneling microscopy and complementary spectroscopy measurements are used to characterize the monolayer pentagonal PdTe2, which demonstrates well-ordered low-symmetry atomic arrangements and is stabilized by lattice matching with the underlying Pd(100) substrate. Theoretical calculations, along with angle-resolved photoemission spectroscopy, reveal monolayer pentagonal PdTe2 is a semiconductor with an indirect bandgap of 1.05 eV. Our work opens an avenue for the synthesis of pentagon-based 2D materials and gives opportunities to explore their applications such as multifunctional nanoelectronics. △ Less

Submitted 7 August, 2024; originally announced August 2024.

Direct view of gate-tunable miniband dispersion in graphene superlattices near the magic twist angle

Authors: Zhihao Jiang, Dongkyu Lee, Alfred J. H. Jones, Youngju Park, Kimberly Hsieh, Paulina Majchrzak, Chakradhar Sahoo, Thomas S. Nielsen, Kenji Watanabe, Takashi Taniguchi, Philip Hofmann, Jill A. Miwa, Yong P. Chen, Jeil Jung, Søren Ulstrup

Abstract: Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when the electron filling is varied. He… ▽ More Superlattices from twisted graphene mono- and bi-layer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when the electron filling is varied. Here, we gain direct access to the filling-dependent low energy bands of twisted bilayer graphene (TBG) and twisted double bilayer graphene (TDBG) by applying micro-focused angle-resolved photoemission spectroscopy to in situ gated devices. Our findings for the two systems are in stark contrast: The doping dependent dispersion for TBG can be described in a simple model, combining a filling-dependent rigid band shift with a many-body related bandwidth change. In TDBG, on the other hand, we find a complex behaviour of the low-energy bands, combining non-monotonous bandwidth changes and tuneable gap openings. Our work establishes the extent of electric field tunability of the low energy electronic states in twisted graphene superlattices and can serve to underpin the theoretical understanding of the resulting phenomena. △ Less

Submitted 19 September, 2024; v1 submitted 27 May, 2024; originally announced May 2024.

Comments: 26 pages, 4 main figures and 7 supplementary figures

Signatures of a surface spin-orbital chiral metal

Authors: Federico Mazzola, Wojciech Brzezicki, Maria Teresa Mercaldo, Anita Guarino, Chiara Bigi, Jill A. Miwa, Domenico De Fazio, Alberto Crepaldi, Jun Fujii, Giorgio Rossi, Pasquale Orgiani, Sandeep Kumar Chaluvadi, Shyni Punathum Chalil, Giancarlo Panaccione, Anupam Jana, Vincent Polewczyk, Ivana Vobornik, Changyoung Kim, Fabio Miletto Granozio, Rosalba Fittipaldi, Carmine Ortix, Mario Cuoco, Antonio Vecchione

Abstract: The relation between crystal symmetries, electron correlations, and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. Detection of such hidden orders is a major goal in condensed matter physics. However, to date, nonstandard forms of magnetism with chiral electronic ordering have been experi… ▽ More The relation between crystal symmetries, electron correlations, and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism. Detection of such hidden orders is a major goal in condensed matter physics. However, to date, nonstandard forms of magnetism with chiral electronic ordering have been experimentally elusive. Here, we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized spin-selective angular-resolved photoelectron spectroscopy to probe them. We exploit the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures which, even though subtle, may be reconciled with the formation of spin-orbital chiral currents at the material surface. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism. △ Less

Submitted 13 February, 2024; originally announced February 2024.

Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES

Authors: Zhihao Jiang, Kimberly Hsieh, Alfred J. H. Jones, Paulina Majchrzak, Chakradhar Sahoo, Kenji Watanabe, Takashi Taniguchi, Jill A. Miwa, Yong P. Chen, Søren Ulstrup

Abstract: Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic… ▽ More Controlling the electronic structure of two-dimensional materials using the combination of twist angle and electrostatic doping is an effective means to induce emergent phenomena. In bilayer graphene with an interlayer twist angle near the magic angle, the electronic dispersion is strongly modified by a manifold of hybridizing moiré Dirac cones leading to flat band segments with strong electronic correlations. Numerous technical challenges arising from spatial inhomogeneity of interlayer interactions, twist angle and device functionality have so far limited momentum-resolved electronic structure measurements of these systems to static conditions. Here, we present a detailed characterization of the electronic structure exhibiting miniband dispersions for twisted bilayer graphene, near the magic angle, integrated in a functional device architecture using micro-focused angle-resolved photoemission spectroscopy. The optimum conditions for visualizing the miniband dispersion are determined by exploiting the spatial resolution and photon energy tunability of the light source and applied to extract a hybridization gap size of $(0.14 \pm 0.03)$~eV and flat band segments extending across a moiré mini Brillouin zone. \textit{In situ} electrostatic gating of the sample enables significant electron-doping, causing the conduction band states to shift below the Fermi energy. Our work emphasizes key challenges in probing the electronic structure of magic angle bilayer graphene devices and outlines conditions for exploring the doping-dependent evolution of the dispersion that underpins the ability to control many-body interactions in the material. △ Less

Submitted 4 February, 2024; originally announced February 2024.

Comments: 21 pages, 5 figures

Journal ref: 2D Mater. 10, 045027 (2023)

Discovery of interlayer plasmon polaron in graphene/WS$_2$ heterostructures

Authors: Søren Ulstrup, Yann in 't Veld, Jill A. Miwa, Alfred J. H. Jones, Kathleen M. McCreary, Jeremy T. Robinson, Berend T. Jonker, Simranjeet Singh, Roland J. Koch, Eli Rotenberg, Aaron Bostwick, Chris Jozwiak, Malte Rösner, Jyoti Katoch

Abstract: Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge tran… ▽ More Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ doping of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15]. △ Less

Submitted 31 August, 2023; originally announced August 2023.

Comments: 25 pages, 9 figures including Supporting Information

Visualizing band structure hybridization and superlattice effects in twisted MoS$_2$/WS$_2$ heterobilayers

Authors: Alfred J. H. Jones, Ryan Muzzio, Sahar Pakdel, Deepnarayan Biswas, Davide Curcio, Nicola Lanatà, Philip Hofmann, Kathleen M. McCreary, Berend T. Jonker, Kenji Watanabe, Takashi Taniguchi, Simranjeet Singh, Roland J. Koch, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup

Abstract: A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band… ▽ More A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moiré superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm 0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences in their electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrmΓ}$-point of the Brillouin zone, leading to a transition from a direct bandgap in the single-layer to an indirect gap in the heterostructure. Replicas of the hybridized states are observed at the centre of twist angle-dependent moiré mini Brillouin zones. We confirm that these replica features arise from the inherent moiré potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Comments: 31 pages, 6 figures in the main text and 5 figures in the supporting information

Journal ref: 2D Mater. 9 015032 (2022)

Ultrafast electronic line width broadening in the C 1s core level of graphene

Authors: Davide Curcio, Sahar Pakdel, Klara Volckaert, Jill A. Miwa, Søren Ulstrup, Nicola Lanatà, Marco Bianchi, Dmytro Kutnyakhov, Federico Pressacco, Günter Brenner, Siarhei Dziarzhytski, Harald Redlin, Steinn Agustsson, Katerina Medjanik, Dmitry Vasilyev, Hans-Joachim Elmers, Gerd Schönhense, Christian Tusche, Ying-Jiun Chen, Florian Speck, Thomas Seyller, Kevin Bühlmann, Rafael Gort, Florian Diekmann, Kai Rossnagel , et al. (9 additional authors not shown)

Abstract: Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the… ▽ More Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the detailed energy distribution of the photoelectrons. Ultrafast pump-probe techniques add a new dimension to such studies, introducing the ability to probe a transient state of the many-body system. Here we use a free electron laser to investigate the effect of a transiently excited electron gas on the core level spectrum of graphene, showing that it leads to a large broadening of the C 1s peak. Confirming a decade-old prediction, the broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron system, rather than by vibrational excitations. This interpretation is supported by a line shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in agreement with electronic temperature values obtained from valence band data. Furthermore, making use of time- and momentum-resolved C 1s spectra, we illustrate how the momentum change of the outgoing core electrons leads to a small but detectable change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the narrow $σ$-band in the C 1s state. The results demonstrate that the XPS line shape can be used as an element-specific and local probe of the excited electron system and that X-ray photoelectron diffraction investigations remain feasible at very high electronic temperatures. △ Less

Submitted 21 May, 2021; originally announced May 2021.

Comments: 16 pages, 12 figures

Journal ref: Phys. Rev. B 104, 161104 (2021)

Spectroscopic view of ultrafast charge carrier dynamics in single- and bilayer transition metal dichalcogenide semiconductors

Authors: P. Majchrzak, K. Volckaert, A. G. Cabo, D. Biswas, M. Bianchi, S. K. Mahatha, M. Dendzik, F. Andreatta, S. S. Grønborg, I. Marković, J. M. Riley, J. C. Johannsen, D. Lizzit, L. Bignardi, S. Lizzit, C. Cacho, O. Alexander, D. Matselyukh, A. S. Wyatt, R. T. Chapman, E. Springate, J. V. Lauritsen, P. D. C. King, C. E. Sanders, J. A. Miwa , et al. (2 additional authors not shown)

Abstract: The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the sing… ▽ More The quasiparticle spectra of atomically thin semiconducting transition metal dichalcogenides (TMDCs) and their response to an ultrafast optical excitation critically depend on interactions with the underlying substrate. Here, we present a comparative time- and angle-resolved photoemission spectroscopy (TR-ARPES) study of the transient electronic structure and ultrafast carrier dynamics in the single- and bilayer TMDCs MoS$_2$ and WS$_2$ on three different substrates: Au(111), Ag(111) and graphene/SiC. The photoexcited quasiparticle bandgaps are observed to vary over the range of 1.9-2.3 eV between our systems. The transient conduction band signals decay on a sub-100 fs timescale on the metals, signifying an efficient removal of photoinduced carriers into the bulk metallic states. On graphene, we instead observe two timescales on the order of 200 fs and 50 ps, respectively, for the conduction band decay in MoS$_2$. These multiple timescales are explained by Auger recombination involving MoS$_2$ and in-gap defect states. In bilayer TMDCs on metals we observe a complex redistribution of excited holes along the valence band that is substantially affected by interactions with the continuum of bulk metallic states. △ Less

Submitted 31 March, 2021; originally announced March 2021.

Comments: 10 pages, 4 figures

Hot carrier-assisted switching of the electron-phonon interaction in 1$T$-VSe$_2$

Authors: Paulina Majchrzak, Sahar Pakdel, Deepnarayan Biswas, Alfred J. H. Jones, Klara Volckaert, Igor Marković, Federico Andreatta, Raman Sankar, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Nicola Lanata, Young Jun Chang, Søren Ulstrup

Abstract: We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent… ▽ More We apply an intense infrared laser pulse in order to perturb the electronic and vibrational states in the three-dimensional charge density wave material 1$T$-VSe$_2$. Ultrafast snapshots of the light-induced hot carrier dynamics and non-equilibrium quasiparticle spectral function are collected using time- and angle-resolved photoemission spectroscopy. The hot carrier temperature and time-dependent electronic self-energy are extracted from the time-dependent spectral function, revealing that incoherent electron-phonon interactions heat the lattice above the charge density wave critical temperature on a timescale of $(200 \pm 40)$~fs. Density functional perturbation theory calculations establish that the presence of hot carriers alters the overall phonon dispersion and quenches efficient low-energy acoustic phonon scattering channels, which results in a new quasi-equilibrium state that is experimentally observed. △ Less

Submitted 12 November, 2020; originally announced November 2020.

Comments: 24 pages including supplemental material, 4 figures in the main text and 4 figures in the supplemental material

Journal ref: Phys. Rev. B 103, 241108 (2021)

Ultrafast triggering of insulator-metal transition in two-dimensional VSe$_2$

Authors: Deepnarayan Biswas, Alfred J. H. Jones, Paulina Majchrzak, Byoung Ki Choi, Tsung-Han Lee, Klara Volckaert, Jiagui Feng, Igor Marković, Federico Andreatta, Chang-Jong Kang, Hyuk Jin Kim, In Hak Lee, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Charlotte E. Sanders, Yu Zhang, Gabriel Karras, Richard T. Chapman, Adam S. Wyatt, Emma Springate, Jill A. Miwa, Philip Hofmann, Phil D. C. King, Young Jun Chang , et al. (2 additional authors not shown)

Abstract: Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulatin… ▽ More Assembling transition metal dichalcogenides (TMDCs) at the two-dimensional (2D) limit is a promising approach for tailoring emerging states of matter such as superconductivity or charge density waves (CDWs). Single-layer (SL) VSe$_2$ stands out in this regard because it exhibits a strongly enhanced CDW transition with a higher transition temperature compared to the bulk in addition to an insulating phase with an anisotropic gap at the Fermi level, causing a suppression of anticipated 2D ferromagnetism in the material. Here, we investigate the interplay of electronic and lattice degrees of freedom that underpin these electronic phases in SL VSe$_2$ using ultrafast pump-probe photoemission spectroscopy. In the insulating state, we observe a light-induced closure of the energy gap on a timescale of 480 fs, which we disentangle from the ensuing hot carrier dynamics. Our work thereby reveals that the phase transition in SL VSe$_2$ is driven by electron-lattice coupling and demonstrates the potential for controlling electronic phases in 2D materials with light. △ Less

Submitted 27 July, 2020; originally announced July 2020.

Comments: 23 pages including supplementary information, 3 figures in the main text and 6 figures in the supplemental text

Journal ref: Nano Lett. 21, 1968-1975 (2021)

Moiré induced electronic structure modifications in monolayer V$_{2}$S$_{3}$ on Au(111)

Authors: Umut Kamber, Sahar Pakdel, Raluca-Maria Stan, Anand Kamlapure, Brian Kiraly, Fabian Arnold, Andreas Eich, Arlette S. Ngankeu, Marco Bianchi, Jill A. Miwa, Charlotte E. Sanders, Nicola Lanatà, Philip Hofmann, Alexander A. Khajetoorians

Abstract: There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moiré induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of sta… ▽ More There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moiré induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of states (LDOS), and quantify this modulation with respect to the moiré superstructure for multiple orientations of the monolayer with respect to the substrate. Scanning tunneling spectroscopy reveals a prominent peak in the LDOS, which is shifted in energy at different points of the moiré superstructure. Comparing ab initio calculations with angle-resolved photoemission, we are able to attribute this peak to bands that exhibit a large out-of-plane d-orbital character. This suggests that the moiré driven variations in the measured density of states is driven by a periodic modulation of the monolayer-substrate hybridization. △ Less

Submitted 5 January, 2021; v1 submitted 23 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 103, 115414 (2021)

Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES

Authors: Alfred J. H. Jones, Ryan Muzzio, Paulina Majchrzak, Sahar Pakdel, Davide Curcio, Klara Volckaert, Deepnarayan Biswas, Jacob Gobbo, Simranjeet Singh, Jeremy T. Robinson, Kenji Watanabe, Takashi Taniguchi, Timur K. Kim, Cephise Cacho, Nicola Lanata, Jill A. Miwa, Philip Hofmann, Jyoti Katoch, Søren Ulstrup

Abstract: The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi ener… ▽ More The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 16 pages, 4 figures. A revised version of the manuscript has been accepted for publication in Advanced Materials

Journal ref: Adv. Mater. 32, 2001656 (2020)

Pnictogens Allotropy and Phase Transformation during van der Waals Growth

Authors: Matthieu Fortin-Deschênes, Hannes Zschiesche, Tevfik O. Menteş, Andrea Locatelli, Robert M. Jacobberger, Francesca Genuzio, Maureen J. Lagos, Deepnarayan Biswas, Chris Jozwiak, Jill A. Miwa, Søren Ulstrup, Aaron Bostwick, Eli Rotenberg, Michael S. Arnold, Gianluigi A. Botton, Oussama Moutanabbir

Abstract: Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light group VA elements are found in the layered orthorhombic A17 phase such as black phosphorus, and can transition to the layered rhombohedral A7 phase at high… ▽ More Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light group VA elements are found in the layered orthorhombic A17 phase such as black phosphorus, and can transition to the layered rhombohedral A7 phase at high pressure. On the other hand, bulk heavier elements are only stable in the A7 phase. Herein, we demonstrate that these two phases not only co-exist during the vdW growth of antimony on weakly interacting surfaces, but also undertake a spontaneous transformation from the A17 phase to the thermodynamically stable A7 phase. This metastability of the A17 phase is revealed by real-time studies unraveling its thickness-driven transition to the A7 phase and the concomitant evolution of its electronic properties. At a critical thickness of ~4 nm, A17 antimony undergoes a diffusionless shuffle transition from AB to AA stacked alpha-antimonene followed by a gradual relaxation to the A7 bulk-like phase. Furthermore, the electronic structure of this intermediate phase is found to be determined by surface self-passivation and the associated competition between A7- and A17-like bonding in the bulk. These results highlight the critical role of the atomic structure and interfacial interactions in shaping the stability and electronic characteristics of vdW layered materials, thus enabling a new degree of freedom to engineer their properties using scalable processes. △ Less

Submitted 28 May, 2020; originally announced May 2020.

Accessing the spectral function in a current-carrying device

Authors: Davide Curcio, Alfred J. H. Jones, Ryan Muzzio, Klara Volckaert, Deepnarayan Biswas, Charlotte E. Sanders, Pavel Dudin, Cephise Cacho, Simranjeet Singh, Kenji Watanabe, Takashi Taniguchi, Jill A. Miwa, Jyoti Katoch, Søren Ulstrup, Philip Hofmann

Abstract: The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known abou… ▽ More The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Comments: 9 pages, 8 figures

Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device

Authors: Ryan Muzzio, Alfred J. H. Jones, Davide Curcio, Deepnarayan Biswas, Jill A. Miwa, Philip Hofmann, Kenji Watanabe, Takashi Taniguchi, Simranjeet Singh, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Roland J. Koch, Søren Ulstrup, Jyoti Katoch

Abstract: Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supporte… ▽ More Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations. △ Less

Submitted 28 May, 2020; v1 submitted 10 January, 2020; originally announced January 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 101, 201409(R) (2020)

Observation and origin of the $Δ$-manifold in Si:P $δ$-layers

Authors: Ann Julie Holt, Sanjoy K. Mahatha, Raluca-Maria Stan, Frode S. Strand, Thomas Nyborg, Davide Curcio, Alex Schenk, Simon P. Cooil, Marco Bianchi, Justin W. Wells, Philip Hofmann, Jill A. Miwa

Abstract: By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experi… ▽ More By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $Δ$-manifold is revealed. Moreover, the number of carriers hosted within the $Δ$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Comments: 5 pages, 2 figures, 1 table

Journal ref: Phys. Rev. B 101, 121402 (2020)

Layer and orbital interference effects in photoemission from transition metal dichalcogenides

Authors: Habib Rostami, Klara Volckaert, Nicola Lanata, Sanjoy K. Mahatha, Charlotte E. Sanders, Marco Bianchi, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Jill A. Miwa, Alexander V. Balatsky, Philip Hofmann, Søren Ulstrup

Abstract: In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the… ▽ More In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a $\vec{k} \cdot \vec{p}$ Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the $\bar{K}$-valley of MoS$_2$. In SL MoS$_2$ we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo $d$ orbitals. In BL MoS$_2$ an additional inter-layer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS$_2$. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 100, 235423 (2019)

Momentum-resolved linear dichroism in bilayer MoS$_2$

Authors: Klara Volckaert, Habib Rostami, Deepnarayan Biswas, Igor Marković, Federico Andreatta, Charlotte E. Sanders, Paulina Majchrzak, Cephise Cacho, Richard T. Chapman, Adam Wyatt, Emma Springate, Daniel Lizzit, Luca Bignardi, Silvano Lizzit, Sanjoy K. Mahatha, Marco Bianchi, Nicola Lanata, Phil D. C. King, Jill A. Miwa, Alexander V. Balatsky, Philip Hofmann, Søren Ulstrup

Abstract: Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemissio… ▽ More Inversion-symmetric crystals are optically isotropic and thus naively not expected to show dichroism effects in optical absorption and photoemission processes. Here, we find a strong linear dichroism effect (up to 42.4%) in the conduction band of inversion-symmetric bilayer MoS$_2$, when measuring energy- and momentum-resolved snapshots of excited electrons by time- and angle-resolved photoemission spectroscopy. We model the polarization-dependent photoemission intensity in the transiently-populated conduction band using the semiconductor Bloch equations and show that the observed dichroism emerges from intralayer single-particle effects within the isotropic part of the dispersion. This leads to optical excitations with an anisotropic momentum-dependence in an otherwise inversion symmetric material. △ Less

Submitted 4 October, 2019; originally announced October 2019.

Comments: 10 pages including supporting information, 3 figures in the main paper and 4 figures in the supporting information

Journal ref: Phys. Rev. B 100, 241406 (2019)

The occupied electronic structure of ultrathin boron doped diamond

Authors: A. K. Schenk, A. C. Pakpour-Tabrizi, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J. A. Miwa, Ph. Hofmann, S. P. Cooil, J. W. Wells, F. Mazzola

Abstract: Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their ph… ▽ More Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement. △ Less

Submitted 1 July, 2019; originally announced July 2019.

Comments: 7 pages, 4 figures. please contact the corresponding author to access the supplementary material

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Authors: Dmytro Kutnyakhov, Rui Patrick Xian, Maciej Dendzik, Michael Heber, Federico Pressacco, Steinn Ymir Agustsson, Lukas Wenthaus, Holger Meyer, Sven Gieschen, Giuseppe Mercurio, Adrian Benz, Kevin Bühlman, Simon Däster, Rafael Gort, Davide Curcio, Klara Volckaert, Marco Bianchi, Charlotte Sanders, Jill Atsuko Miwa, Søren Ulstrup, Andreas Oelsner, Christian Tusche, Ying-Jiun Chen, Dmitrii Vasilyev, Katerina Medjanik , et al. (16 additional authors not shown)

Abstract: Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectro… ▽ More Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in ($k_x$, $k_y$, $E$) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å $^{-1}$ diameter in a binding-energy range of several eV, resolving about $2.5\times10^5$ data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe$_2$. △ Less

Submitted 18 September, 2019; v1 submitted 28 June, 2019; originally announced June 2019.

Journal ref: Review of Scientific Instruments 91, 013109 (2020)

The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon

Authors: Federico Mazzola, Chin-Yi Chen, Rajib Rahman, Xie-Gang Zhu, Craig M. Polley, Thiagarajan Balasubramanian, Phil D. C. King, Philip Hofmann, Jill A. Miwa, Justin W. Wells

Abstract: The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alte… ▽ More The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, phosphorus dopants in silicon have drawn the most interest, and it is on this platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the SiP delta-layer platform. In this work, we use high resolution angle-resolved photoemission spectroscopy (ARPES) to reveal the structure of the electronic states which exist because of the high dopant density of the SiP delta-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the bandstructure has important implications for quantum proto-devices which are built on the SiP delta-layer platform. △ Less

Submitted 24 April, 2019; originally announced April 2019.

Comments: 6 pages, 3 figures

Direct observation of minibands in twisted heterobilayers

Authors: Søren Ulstrup, Roland J. Koch, Simranjeet Singh, Kathleen M. McCreary, Berend T. Jonker, Jeremy T. Robinson, Chris Jozwiak, Eli Rotenberg, Aaron Bostwick, Jyoti Katoch, Jill A. Miwa

Abstract: Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed… ▽ More Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12]. △ Less

Submitted 14 April, 2019; originally announced April 2019.

Comments: Main manuscript: 14 pages, 4 figures. Supporting information: 8 pages, 5 figures

Journal ref: Science Advances 03 Apr 2020: Vol. 6, no. 14, eaay6104

Nanoscale patterning of quasiparticle band alignment

Authors: Søren Ulstrup, Cristina E. Giusca, Jill A. Miwa, Charlotte E. Sanders, Alex Browning, Pavel Dudin, Cephise Cacho, Olga Kazakova, D. Kurt Gaskill, Rachael L. Myers-Ward, Tianyi Zhang, Mauricio Terrones, Philip Hofmann

Abstract: Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale elec… ▽ More Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-dimensional (2D) materials, disparate electronic structures can be realized even within a single uniform sheet, merely by locally applying different vertical bias voltages. Indeed, it has been suggested that nanoscale electronic patterning in a single sheet can be achieved by placing the 2D material on a suitably pre-patterned substrate, exploiting the sensitivity of 2D materials to their environment via band alignment, screening or hybridization. Here, we utilize the inherently nano-structured single layer (SL) and bilayer (BL) graphene on silicon carbide to laterally tune the electrostatic gating of adjacent SL tungsten disulphide (WS$_2$) in a van der Waals heterostructure. The electronic band alignments are mapped in energy and momentum space using angle-resolved photoemission with a spatial resolution on the order of 500~nm (nanoARPES). We find that the SL WS$_2$ band offsets track the work function of the underlying SL and BL graphene, and we relate such changes to observed lateral patterns of exciton and trion luminescence from SL WS$_2$, demonstrating ultimate control of optoelectronic properties at the nanoscale. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Comments: 13 pages, 3 figures

Transient Hot Electron Dynamics in Single-Layer TaS$_2$

Authors: Federico Andreatta, Habib Rostami, Antonija Grubišić Čabo, Marco Bianchi, Charlotte E. Sanders, Deepnarayan Biswas, Cephise Cacho, Alfred J. H. Jones, Richard T. Chapman, Emma Springate, Phil D. C. King, Jill A. Miwa, Alexander Balatsky, Søren Ulstrup, Philip Hofmann

Abstract: Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (ener… ▽ More Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS$_2$ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and $k$-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to 150 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant. △ Less

Submitted 23 January, 2019; originally announced January 2019.

Comments: 10 pages, 7 figures

Journal ref: Phys. Rev. B 99, 165421 (2019)

Epitaxial single layer NbS$_{2}$ on Au(111): synthesis, structure, and electronic properties

Authors: Raluca-Maria Stan, Sanjoy K. Mahatha, Marco Bianchi, Charlotte E. Sanders, Davide Curcio, Philip Hofmann, Jill A. Miwa

Abstract: We report on the epitaxial growth of single layer NbS$_2$ on Au(111) and determine both its crystalline and electronic structure by a combination of low-energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. The layer is found to grow in the 1H structural phase with a lattice constant of (3.29$\pm$0.03)~Å, a value comparable to the bulk 2H NbS… ▽ More We report on the epitaxial growth of single layer NbS$_2$ on Au(111) and determine both its crystalline and electronic structure by a combination of low-energy electron diffraction, scanning tunnelling microscopy and angle-resolved photoemission spectroscopy. The layer is found to grow in the 1H structural phase with a lattice constant of (3.29$\pm$0.03)~Å, a value comparable to the bulk 2H NbS$_2$ lattice constant. The photoemission data reveals a metallic band structure down to a temperature of 30~K. The observed bands are rather broad and consistent with either a strong NbS$_2$-substrate interaction or with the recently reported interplay of strong many-body effects in single layer NbS$_2$ \cite{Loon:2018aa}. No indications of a charge density wave are observed. △ Less

Submitted 11 January, 2019; originally announced January 2019.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Materials 3, 044003 (2019)

Electron-phonon coupling in single-layer MoS2

Authors: Sanjoy K. Mahatha, Arlette S. Ngankeu, Nicki Frank Hinsche, Ingrid Mertig, Kevin Guilloy, Peter L. Matzen, Marco Bianchi, Charlotte E. Sanders, Jill A. Miwa, Harsh Bana, Elisabetta Travaglia, Paolo Lacovig, Luca Bignardi, Daniel Lizzit, Rosanna Larciprete, Alessandro Baraldi, Silvano Lizzit, Philip Hofmann

Abstract: The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo… ▽ More The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material. △ Less

Submitted 18 November, 2018; originally announced November 2018.

Quasi-free-standing single-layer WS2 achieved by intercalation

Authors: Sanjoy K. Mahatha, Maciej Dendzik, Charlotte E. Sanders, Matteo Michiardi, Marco Bianchi, Jill A. Miwa, Philip Hofmann

Abstract: Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effec… ▽ More Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approach is that the interaction between the single-layer and the substrate can be strong enough to enforce a single crystalline orientation of the layer. On the other hand, the same interaction can lead to hybridization effects, resulting in the deterioration of the single-layer's native properties. This dilemma can potentially be solved by decoupling the single-layer from the substrate surface after the growth via intercalation of atoms or molecules. Here we show that such a decoupling can indeed be achieved for single-layer WS2 epitaxially grown on Ag(111) by intercalation of Bi atoms. This process leads to a suppression of the single-layer WS2-Ag substrate interaction, yielding an electronic band structure reminiscent of free-standing single-layer WS2. △ Less

Submitted 14 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. Materials 2, 124001 (2018)

Novel single-layer vanadium sulphide phases

Authors: Fabian Arnold, Raluca-Maria Stan, Sanjoy K. Mahatha, H. E. Lund, Davide Curcio, Maciej Dendzik, Harsh Bana, Elisabetta Travaglia, Luca Bignardi, Paolo Lacovig, Daniel Lizzit, Zheshen Li, Marco Bianchi, Jill A. Miwa, Martin Bremholm, Silvano Lizzit, Philip Hofmann, C. E. Sanders

Abstract: VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new… ▽ More VS2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS2, which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS2 lattice of S by annealing in vacuum so as to create an entirely new two-dimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H2S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments. △ Less

Submitted 21 March, 2018; originally announced March 2018.

Comments: 18 pages, 6 figures

Simultaneous conduction and valence band quantisation in ultra-shallow, high density doping profiles in semiconductors

Authors: F. Mazzola, J. W. Wells, A. C. Pakpour-Tabrizi, R. B. Jackman, B. Thiagarajan, Ph. Hofmann, J. A. Miwa

Abstract: We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $δ$-layers). We show that, in addition to the well known quantisation of CB states within the dopant plane, the confinement of VB-derived states between the sub-surface P dopant layer and the Si surface gives rise to… ▽ More We demonstrate simultaneous quantisation of conduction band (CB) and valence band (VB) states in silicon using ultra-shallow, high density, phosphorus doping profiles (so-called Si:P $δ$-layers). We show that, in addition to the well known quantisation of CB states within the dopant plane, the confinement of VB-derived states between the sub-surface P dopant layer and the Si surface gives rise to a simultaneous quantisation of VB states in this narrow region. We also show that the VB quantisation can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantised VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantised CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantised CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter. △ Less

Submitted 31 December, 2017; originally announced January 2018.

Comments: 5 pages, 2 figures and supplementary material

Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS$_2$

Authors: Maciej Dendzik, Albert Bruix, Matteo Michiardi, Arlette S. Ngankeu, Marco Bianchi, Jill A. Miwa, Bjørk Hammer, Philip Hofmann, Charlotte E. Sanders

Abstract: Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, si… ▽ More Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semiconductor and a metallic contact can lead to a semiconductor-to-metal transition in the two-dimensional material--a finding which points the way to a possible method of achieving low-resistance junctions. Specifically, single-layer WS$_2$ undergoes a semiconductor-to-metal transition when epitaxially grown on Ag(111), while it remains a direct band gap semiconductor on Au(111). The metallicity of the single layer on Ag(111) is established by lineshape analysis of core level photoemission spectra. Angle-resolved photoemission spectroscopy locates the metallic states near the Q point of the WS$_2$ Brillouin zone. Density functional theory calculations show that the metallic states arise from hybridization between Ag bulk bands and the local conduction band minimum of WS$_2$ near the Q point. △ Less

Submitted 9 August, 2017; originally announced August 2017.

Comments: Main text: 21 pages, 4 figures. Supplement: 7 pages, 4 figures, 1 table

Journal ref: Phys. Rev. B 96, 235440 (2017)

Electron-phonon coupling in the spin-split valence band of single layer WS$_2$

Authors: Nicki Frank Hinsche, Arlette S. Ngankeu, Kevin Guilloy, Sanjoy K. Mahatha, Antonija Grubišić Čabo, Marco Bianchi, Maciej Dendzik, Charlotte E. Sanders, Jill A. Miwa, Harsh Bana, Elisabetta Travaglia, Paolo Lacovig, Luca Bignardi, Rosanna Larciprete, Alessandro Baraldi, Silvano Lizzit, Kristian Sommer Thygesen, Philip Hofmann

Abstract: The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud… ▽ More The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength. △ Less

Submitted 17 June, 2017; originally announced June 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 96, 121402 (2017)

Quasi one-dimensional metallic band dispersion in the commensurate charge density wave of $1T$-TaS$_2$

Authors: Arlette S. Ngankeu, Kevin Guilloy, Sanjoy K. Mahatha, Marco Bianchi, Charlotte E. Sanders, Kai Rossnagel, Jill A. Miwa, Philip Hofmann

Abstract: The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we… ▽ More The commensurate charge density wave (CDW) in the layered compound $1T$-TaS$_2$ has hitherto mostly been treated as a quasi two-dimensional phenomenon. Recent band structure calculations have, however, predicted that the CDW coexists with a nearly one-dimensional metallic dispersion perpendicular to the crystal planes. Using synchrotron radiation based angle-resolved photoemission spectroscopy, we show that this metallic band does in fact exist. Its occupied band width is in excellent agreement with predictions for a simple $τ_c$ stacking order of the CDW between adjacent layers and its periodicity in the $c$ direction is $2 π/ c$. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 96, 195147 (2017)

Spin and Valley Control of Free Carriers in Single-Layer WS$_2$

Authors: Søren Ulstrup, Antonija Grubišić Čabo, Deepnarayan Biswas, Jonathon M. Riley, Maciej Dendzik, Charlotte E. Sanders, Marco Bianchi, Cephise Cacho, Dan Matselyukh, Richard T. Chapman, Emma Springate, Phil D. C. King, Jill A. Miwa, Philip Hofmann

Abstract: The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high q… ▽ More The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer of WS$_2$. We observe that the optically generated free hole density in a single valley can be increased by a factor of 2 using a circularly polarized optical excitation. Moreover, we find that by varying the photon energy of the excitation we can tune the free carrier density in a given spin-split state around the valence band maximum of the material. The control of the photon energy and polarization of the excitation thus permits us to selectively excite free electron-hole pairs with a given spin and within a single valley. △ Less

Submitted 21 August, 2016; originally announced August 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 95, 041405 (2017)

Crystalline and electronic structure of single-layer TaS$_2$

Authors: Charlotte E. Sanders, Maciej Dendzik, Arlette S. Ngankeu, Andreas Eich, Albert Bruix, Marco Bianchi, Jill A. Miwa, Bjørk Hammer, Alexander A. Khajetoorians, Philip Hofmann

Abstract: Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra e… ▽ More Single-layer TaS$_2$ is epitaxially grown on Au(111) substrates. The resulting two-dimensional crystals adopt the 1H polymorph. The electronic structure is determined by angle-resolved photoemission spectroscopy and found to be in excellent agreement with density functional theory calculations. The single layer TaS$_2$ is found to be strongly n-doped, with a carrier concentration of 0.3(1) extra electrons per unit cell. No superconducting or charge density wave state is observed by scanning tunneling microscopy at temperatures down to 4.7 K. △ Less

Submitted 19 June, 2016; originally announced June 2016.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 94, 081404 (2016)

Ultrafast Band Structure Control of a Two-Dimensional Heterostructure

Authors: Søren Ulstrup, Antonija Grubišić Čabo, Jill A. Miwa, Jonathon M. Riley, Signe S. Grønborg, Jens C. Johannsen, Cephise Cacho, Oliver Alexander, Richard T. Chapman, Emma Springate, Marco Bianchi, Maciej Dendzik, Jeppe V. Lauritsen, Phil D. C. King, Philip Hofmann

Abstract: The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-l… ▽ More The electronic structure of two-dimensional (2D) semiconductors can be significantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS$_2$ on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS$_2$ layer. Following optical excitation, the band gap is reduced by up to $\sim\!$400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the $n$-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Comments: 22 pages, 5 figures, Published in ACS Nano 2016

Tunable Carrier Multiplication and Cooling in Graphene

Authors: Jens C. Johannsen, Søren Ulstrup, Alberto Crepaldi, Federico Cilento, Michele Zacchigna, Jill A. Miwa, Cephise Cacho, Richard T. Chapman, Emma Springate, Felix Fromm, Christian Raidel, Thomas Seyller, Phil D. C. King, Fulvio Parmigiani, Marco Grioni, Philip Hofmann

Abstract: Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium c… ▽ More Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly ($n$-)doped graphene, we observe larger carrier multiplication factors ($>$ 3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less ($p$-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation. △ Less

Submitted 4 January, 2016; originally announced January 2016.

Comments: 17 pages, 3 figures

Journal ref: Nano Lett. 15, 326-331 (2015)

Single-layer MoS$_2$ on Au(111): band gap renormalization and substrate interaction

Authors: Albert Bruix, Jill A. Miwa, Nadine Hauptmann, Daniel Wegner, Søren Ulstrup, Signe S. Grønborg, Charlotte E. Sanders, Maciej Dendzik, Antonija Grubišić Čabo, Marco Bianchi, Jeppe V. Lauritsen, Alexander A. Khajetoorians, Bjørk Hammer, Philip Hofmann

Abstract: The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is… ▽ More The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy, scanning tunnelling spectroscopy, and first principles calculations. While the band dispersion of the supported single-layer is close to a free-standing layer in the vicinity of the valence band maximum at $\bar{K}$ and the calculated electronic band gap on Au(111) is similar to that calculated for the free-standing layer, significant modifications to the band structure are observed at other points of the two-dimensional Brillouin zone: At $\barΓ$, the valence band maximum has a significantly higher binding energy than in the free MoS$_2$ layer and the expected spin-degeneracy of the uppermost valence band at the $\bar{M}$ point cannot be observed. These band structure changes are reproduced by the calculations and can be explained by the detailed interaction of the out-of-plane MoS$_2$ orbitals with the substrate. △ Less

Submitted 1 January, 2016; originally announced January 2016.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 93, 165422 (2016)

Synthesis of Epitaxial Single-Layer MoS$_2$ on Au(111)

Authors: Signe S. Grønborg, Søren Ulstrup, Marco Bianchi, Maciej Dendzik, Charlotte E. Sanders, Jeppe V. Lauritsen, Philip Hofmann, Jill A. Miwa

Abstract: We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach b… ▽ More We present a method for synthesizing large area epitaxial single-layer MoS$_2$ on the Au(111) surface in ultrahigh vacuum. Using scanning tunneling microscopy and low energy electron diffraction, the evolution of the growth is followed from nanoscale single-layer MoS$_2$ islands to a continuous MoS$_2$ layer. An exceptionally good control over the MoS$_2$ coverage is maintained using an approach based on cycles of Mo evaporation and sulfurization to first nucleate the MoS$_2$ nano-islands and then gradually increase their size. During this growth process the native herringbone reconstruction of Au(111) is lifted as shown by low energy electron diffraction measurements. Within these MoS$_2$ islands, we identify domains rotated by 60$^{\circ}$ that lead to atomically sharp line defects at domain boundaries. As the MoS$_2$ coverage approaches the limit of a complete single-layer, the formation of bilayer MoS$_2$ islands is initiated. Angle-resolved photoemission spectroscopy measurements of both single and bilayer MoS$_2$ samples show a dramatic change in their band structure around the center of the Brillouin zone. Brief exposure to air after removing the MoS$_2$ layer from vacuum is not found to affect its quality. △ Less

Submitted 23 September, 2015; originally announced September 2015.

Comments: 8 pages, 6 figures

Journal ref: Langmuir 31, 9700 (2015)

Growth and electronic structure of epitaxial single-layer WS$_2$ on Au(111)

Authors: Maciej Dendzik, Matteo Michiardi, Charlotte Sanders, Marco Bianchi, Jill A. Miwa, Signe S. Grønborg, Jeppe Vang Lauritsen, Philip Hofmann

Abstract: Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be sign… ▽ More Large-area single-layer WS$_2$ is grown epitaxially on Au(111) using evaporation of W atoms in a low pressure H$_2$S atmosphere. It is characterized by means of scanning tunneling microscopy, low-energy electron diffraction and core-level spectroscopy. Its electronic band structure is determined by angle-resolved photoemission spectroscopy. The valence band maximum at $\bar{K}$ is found to be significantly higher than at $\barΓ$. The observed dispersion around $\bar{K}$ is in good agreement with density functional theory calculations for a free-standing monolayer, whereas the bands at $\barΓ$ are found to be hybridized with states originating from the Au substrate. Strong spin-orbit coupling leads to a large spin-splitting of the bands in the neighborhood of the $\bar{K}$ points, with a maximum splitting of 419(11)~meV. The valence band dispersion around $\bar{K}$ is found to be highly anisotropic with spin-branch dependent effective hole masses of $0.40(02)m_e$ and $0.57(09)m_e$ for the upper and lower split valence band, respectively. The large size of the spin-splitting and the low effective mass of the valence band maximum make single-layer WS$_2$ a promising alternative to the widely studied MoS$_2$ for applications in electronics, spintronics and valleytronics. △ Less

Submitted 17 September, 2015; originally announced September 2015.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. B 92, 245442 (2015)

Observation of Ultrafast Free Carrier Dynamics in Single Layer MoS$_2$

Authors: Antonija Grubišić Čabo, Jill A. Miwa, Signe S. Grønborg, Jonathon M. Riley, Jens C. Johannsen, Cephise Cacho, Oliver Alexander, Richard T. Chapman, Emma Springate, Marco Grioni, Jeppe V. Lauritsen, Phil D. C. King, Philip Hofmann, Søren Ulstrup

Abstract: The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band ga… ▽ More The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission spectroscopy for a SL of MoS$_2$ on a metallic substrate to directly measure the excited free carriers. This allows us to ascertain a direct quasiparticle band gap of 1.95 eV and determine an ultrafast (50 fs) extraction of excited free carriers via the metal in contact with the SL MoS$_2$. This process is of key importance for optoelectronic applications that rely on separated free carriers rather than excitons. △ Less

Submitted 28 August, 2015; originally announced August 2015.

Comments: 15 pages, 4 Figures. To appear in Nano Letters, 2015

One-dimensional spin texture of Bi(441); Quantum Spin Hall properties without a topological insulator

Authors: M. Bianchi, F. Song, S. Cooil, A. F. Monsen, E. Wahlstrom, J. A. Miwa, E. D. L. Rienks, D. A. Evans, A. Strozecka, J. I. Pascual, M. Leandersson, T. Balasubramanian, Ph. Hofmann, J. W. Wells

Abstract: The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in t… ▽ More The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in the orthogonal in-plane direction ($k_y$), and both of which have a Dirac-like crossing at $k_x$=0. Spin ARPES reveals a strong in-plane polarisation, consistent with Rashba-like spin-orbit coupling. One state has a strong out-of-plane spin component, which matches with the miscut angle, suggesting its {possible} origin as an edge-state. The electronic structure of Bi(441) has significant similarities with topological insulator surface states and is expected to support one dimensional Quantum Spin Hall-like coupled spin-charge transport properties with inhibited backscattering, without requiring a topological insulator bulk. △ Less

Submitted 26 June, 2015; originally announced June 2015.

Journal ref: Physical Review B 91 (16), 165307, 2015

Ramifications of Optical Pumping on the Interpretation of Time-Resolved Photoemission Experiments on Graphene

Authors: Søren Ulstrup, Jens Christian Johannsen, Federico Cilento, Alberto Crepaldi, Jill A. Miwa, Michele Zacchigna, Cephise Cacho, Richard T. Chapman, Emma Springate, Felix Fromm, Christian Raidel, Thomas Seyller, Phil D. C. King, Fulvio Parmigiani, Marco Grioni, Philip Hofmann

Abstract: In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system… ▽ More In pump-probe time and angle-resolved photoemission spectroscopy (TR-ARPES) experiments the presence of the pump pulse adds a new level of complexity to the photoemission process in comparison to conventional ARPES. This is evidenced by pump-induced vacuum space-charge effects and surface photovoltages, as well as multiple pump excitations due to internal reflections in the sample-substrate system. These processes can severely affect a correct interpretation of the data by masking the out-of-equilibrium electron dynamics intrinsic to the sample. In this study, we show that such effects indeed influence TR-ARPES data of graphene on a silicon carbide (SiC) substrate. In particular, we find a time- and laser fluence-dependent spectral shift and broadening of the acquired spectra, and unambiguously show the presence of a double pump excitation. The dynamics of these effects is slower than the electron dynamics in the graphene sample, thereby permitting us to deconvolve the signals in the time domain. Our results demonstrate that complex pump-related processes should always be considered in the experimental setup and data analysis. △ Less

Submitted 5 February, 2015; originally announced February 2015.

Comments: 9 pages, 4 figures

Interface-induced heavy-hole/light-hole splitting of acceptors in silicon

Authors: J. A. Mol, J. Salfi, R. Rahman, Y. Hsueh, J. A. Miwa, G. Klimeck, M. Y. Simmons, S. Rogge

Abstract: The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous… ▽ More The energy spectrum of spin-orbit coupled states of individual sub-surface boron acceptor dopants in silicon have been investigated using scanning tunneling spectroscopy (STS) at cryogenic temperatures. The spatially resolved tunnel spectra show two resonances which we ascribe to the heavy- and light-hole Kramers doublets. This type of broken degeneracy has recently been argued to be advantageous for the lifetime of acceptor-based qubits [Phys. Rev. B 88 064308 (2013)]. The depth dependent energy splitting between the heavy- and light-hole Kramers doublets is consistent with tight binding calculations, and is in excess of 1 meV for all acceptors within the experimentally accessible depth range (< 2 nm from the surface). These results will aid the development of tunable acceptor-based qubits in silicon with long coherence times and the possibility for electrical manipulation. △ Less

Submitted 22 January, 2015; originally announced January 2015.