Showing 1–7 of 7 results for author: Mishra, K K

Multilayer Ferromagnetic Spintronic Devices for Neuromorphic Computing Applications

Authors: Aijaz H. Lone, Xuecui Zou, Kishan K. Mishra, Venkatesh Singaravelu, Hossein Fariborzi, Gianluca Setti

Abstract: Spintronics has gone through substantial progress due to its applications in energy-efficient memory, logic and unconventional computing paradigms. Multilayer ferromagnetic thin films are extensively studied for understanding the domain wall and skyrmion dynamics. However, most of these studies are confined to the materials and domain wall/skyrmion physics. In this paper, we present the experiment… ▽ More Spintronics has gone through substantial progress due to its applications in energy-efficient memory, logic and unconventional computing paradigms. Multilayer ferromagnetic thin films are extensively studied for understanding the domain wall and skyrmion dynamics. However, most of these studies are confined to the materials and domain wall/skyrmion physics. In this paper, we present the experimental and micromagnetic realization of a multilayer ferromagnetic spintronic device for neuromorphic computing applications. The device exhibits multilevel resistance states and the number of resistance states increases with lowering temperature. This is supported by the multilevel magnetization behavior observed in the micromagnetic simulations. Furthermore, the evolution of resistance states with spin-orbit torque is also explored in experiments and simulations. Using the multi-level resistance states of the device, we propose its applications as a synaptic device in hardware neural networks and study the linearity performance of the synaptic devices. The neural network based on these devices is trained and tested on the MNIST dataset using a supervised learning algorithm. The devices at the chip level achieve 90\% accuracy. Thus, proving its applications in neuromorphic computing. Furthermore, we lastly discuss the possible application of the device in cryogenic memory electronics for quantum computers. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Magnetic Skyrmion: From Fundamental Physics to Pioneering Applications

Authors: Kishan K. Mishra, Aijaz H. Lone, Srikant Srinivasan, Hossein Fariborzi, Gianluca Setti

Abstract: Skyrmionic devices exhibit energy-efficient and high-integration data storage and computing capabilities due to their small size, topological protection, and low drive current requirements. So, to realize these devices, an extensive study, from fundamental physics to practical applications, becomes essential. In this article, we present an exhaustive review of the advancements in understanding the… ▽ More Skyrmionic devices exhibit energy-efficient and high-integration data storage and computing capabilities due to their small size, topological protection, and low drive current requirements. So, to realize these devices, an extensive study, from fundamental physics to practical applications, becomes essential. In this article, we present an exhaustive review of the advancements in understanding the fundamental physics behind magnetic skyrmions and the novel data storage and computing technologies based on them. We begin with an in-depth discussion of fundamental concepts such as topological protection, stability, statics and dynamics essential for understanding skyrmions, henceforth the foundation of skyrmion technologies. For the realization of CMOS-compatible skyrmion functional devices, the writing and reading of the skyrmions are crucial. We discuss the developments in different writing schemes such as STT, SOT, and VCMA. The reading of skyrmions is predominantly achieved via two mechanisms: the Magnetoresistive Tunnel Junction (MTJ) TMR effect and topological resistivity (THE). So, a thorough investigation into the Skyrmion Hall Effect, topological properties, and emergent fields is also provided, concluding the discussion on skyrmion reading developments. Based on the writing and reading schemes, we discuss the applications of the skyrmions in conventional logic, unconventional logic, memory applications, and neuromorphic computing in particular. Subsequently, we present an overview of the potential of skyrmion-hosting Majorana Zero Modes (MZMs) in the emerging Topological Quantum Computation and helicity-dependent skyrmion qubits. △ Less

Submitted 7 September, 2023; v1 submitted 22 August, 2023; originally announced August 2023.

Comments: arXiv admin note: text overlap with arXiv:1907.00957 by other authors

High Entropy Oxide Relaxor Ferroelectrics

Authors: Yogesh Sharma, Min-Cheol Lee, Krishna C. Pitike, Karuna K. Mishra, Qiang Zheng, Xiang Gao, Brianna L. Musico, Alessandro R. Mazza, Ram S. Katiyar, Veerle Keppens, Matthew Brahlek, Dmitry A. Yarotski, Rohit P. Prasankumar, Aiping Chen, Valentino R. Cooper, T. Zac Ward

Abstract: Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantl… ▽ More Relaxor ferrolectrics are important in technological applications due to a strong electromechanical response, energy storage capacity, electrocaloric effect, and pyroelectric energy conversion properties. Current efforts to discover and design new materials in this class generally rely on substitutional doping of known ferroelectrics, as slight changes to local compositional order can significantly affect the Curie temperature, morphotropic phase boundary, and electromechanical responses. In this work, we demonstrate that moving to the strong limit of compositional complexity in an ABO3 perovskite allows stabilization of novel relaxor responses that do not rely on a single narrow phase transition region. Entropy-assisted synthesis approaches are used to create single crystal Ba(Ti0.2Sn0.2Zr0.2Hf0.2Nb0.2)O3 [Ba(5B)O] films. The high levels of configurational disorder present in this system is found to influence dielectric relaxation, phase transitions, nano-polar domain formation, and Curie temperature. Temperature-dependent dielectric, Raman spectroscopy and second-harmonic generation measurements reveal multiple phase transitions, a high Curie temperature of 570 K, and the relaxor ferroelectric nature of Ba(5B)O films. The first principles theory calculations are used to predict possible combinations of cations to quantify the relative feasibility of formation of highly disordered single-phase perovskite systems. The ability to stabilize single-phase perovskites with such a large number of different cations on the B-sites offers new possibilities for designing high-performance materials for piezoelectric, pyroelectric and tunable dielectric applications. △ Less

Submitted 1 June, 2021; originally announced June 2021.

Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Authors: K. K. Mishra, T. R. Ravindran, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Herre S. J. van der Zant, Amit Pawbake, R. Kanawade, Andres Castellanos-Gomez, Dattatray J. Late

Abstract: Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method… ▽ More Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient.Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent Ag Raman bands; a band at 557 cm-1 softens under compression, and others at 175, 300, and 370 cm-1 show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line-width of the soft phonon about ~ 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from Ag soft mode frequency (557 cm-1) versus pressure extrapolation curve, consistent with recent reported theoretical predictions. Using the experimental mode Grüneisen parameters i of Raman modes, the cross-plane thermal expansion coefficient Cv of the TiS3 nanoribbons at ambient phase is estimated to be1.32110-6K-1. The observed results are expected to be useful in calibration and performance of next generation nano-electronics and optical devices under extreme stress conditions. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Plasmon Soft Mode in an Organic-Inorganic Hybrid Perovskite

Authors: Jiyu Tian, Karuna Kara Mishra, Eli Zysman-Colman, Finlay D. Morrison, Ram S. Katiyar, James F. Scott

Abstract: We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon fre… ▽ More We report inelastic light scattering from underdamped plasmons in azetidinium lead bromide (AzPbBr3). The plasmons are very strongly temperature dependent and serve as a soft mode for the semiconductor-insulator phase transition near TC » 150 K, demonstrating a continuous decrease in hole concentration np(T) by at least a factor of four and implying a nearly tricritical transition. The plasmon frequency and linewidth agree with independent measurements, and the impedance analysis reveals a frequency dependence (modelled by a constant phase element, CPE) that can be identified as due to electron-phonon coupling. The dependence of plasmon frequency upon (TC-T) is analogous to that for magnons in magnetic insulators or soft transverse optical phonons in ferroelectrics and ferroelastics, or for phasons in incommensurately modulated insulators. △ Less

Submitted 16 April, 2019; originally announced April 2019.

Comments: 11 pages, 3 figures

In-situ high-pressure Raman scattering studies in PbWO4 up to 48 GPa

Authors: D. Errandonea, R. Lacomba-Perales, K. K. Mishra, A. Polian

Abstract: The effect of pressure on the Raman spectrum of PbWO4 has been investigated up to 48 GPa in a diamond-anvil cell using neon as pressure-transmitting medium. Changes are detected in the Raman spectrum at 6.8 GPa as a consequence of a structural phase transition from the tetragonal scheelite structure to the monoclinic PbWO4-III structure. Two additional phase transitions are detected at 15.5 and 21… ▽ More The effect of pressure on the Raman spectrum of PbWO4 has been investigated up to 48 GPa in a diamond-anvil cell using neon as pressure-transmitting medium. Changes are detected in the Raman spectrum at 6.8 GPa as a consequence of a structural phase transition from the tetragonal scheelite structure to the monoclinic PbWO4-III structure. Two additional phase transitions are detected at 15.5 and 21.2 GPa to the previously unknown crystalline phases IV and V. The last one remains stable up to 43.3 GPa. At 47.7 GPa all Raman modes disappear, which could be caused by a pressure-induced amorphization. All structural changes are reversible, being the scheelite phase recovered at ambient pressure. However, the two most intense modes of the PbWO4-III phase are still present after full decompression, indicating that this phase coexists as a minority metastable phase with the scheelite phase after pressure release. The wavenumber of the Raman modes and their pressure dependencies are reported for the four crystalline phases. The present reported results are compared with previous studies. △ Less

Submitted 23 October, 2015; originally announced October 2015.

Comments: 24 pages, 4 figures, 4 tables

Journal ref: Journal of Alloys and Compounds 667 (2016) 36 - 43

Anomalous behavior of acoustic phonon mode and central peak in Pb(Zn1/3Nb2/3)0.85Ti0.15O3 single crystal studied using Brillouin scattering

Authors: K. K. Mishra, V. Sivasubramanian, A. K. Arora, Dillip Pradhan

Abstract: Brillouin spectroscopic measurements have been carried out on relaxor ferroelectric Pb(Zn1/3Nb2/3)0.85Ti0.15O3 (PZN-PT) single crystal over the temperature range 300-585 K. The longitudinal acoustic phonon begins to soften below 650 K, which is attributed to the Burns temperature (TB). On the other hand, the line width of the longitudinal acoustic (LA) phonon mode exhibits a sharp Landau-Khalatnik… ▽ More Brillouin spectroscopic measurements have been carried out on relaxor ferroelectric Pb(Zn1/3Nb2/3)0.85Ti0.15O3 (PZN-PT) single crystal over the temperature range 300-585 K. The longitudinal acoustic phonon begins to soften below 650 K, which is attributed to the Burns temperature (TB). On the other hand, the line width of the longitudinal acoustic (LA) phonon mode exhibits a sharp Landau-Khalatnikov-like maximum and an accompanying anomaly in the LA mode frequency around 463 K, the tetragonal-cubic phase transition temperature (Ttc). In addition, a broad central peak, found below the characteristic intermediate temperature T* ~ 525 K, exhibits critical slowing down upon approaching Ttc indicating an order-disorder nature of the phase transition. The relaxation time of polar nano regions estimated from the broad central peak is found to be same as that obtained for LA phonon mode suggesting an electrostrictive coupling between strain and polarization fluctuations. The activation energy for the PNRs relaxation-dynamics is found to be ~236 meV. Polarized nature of the central peak suggests that the polar nano regions have the tendency to form long-range polar ordering. △ Less

Submitted 29 June, 2012; originally announced June 2012.