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Anisotropic van der Waals Crystal with High Refractive Index and Transparency for UV-Visible Range Applications
Authors:
Aleksandr Slavich,
Georgy Ermolaev,
Ilya Zavidovskiy,
Dmitriy Grudinin,
Konstantin Kravtsov,
Mikhail Tatmyshevskiy,
Mikhail Mironov,
Adilet Toksumakov,
Gleb Tselikov,
Ilia Fradkin,
Kirill Voronin,
Maksim Povolotskiy,
Olga Matveeva,
Alexander Syuy,
Dmitry Yakubovsky,
Dmitry Tsymbarenko,
Ivan Kruglov,
Davit Ghazaryan,
Sergey Novikov,
Andrey Vyshnevyy,
Aleksey Arsenin,
Valentyn Volkov,
Kostya Novoselov
Abstract:
Thanks to their record high refractive index and giant optical anisotropy, van der Waals (vdW) materials have accelerated the development of nanophotonics. However, traditional high refractive index materials, such as titanium dioxide (TiO2), still dominate in the most important visible range. This is due to the current lack of transparent vdW materials across the entire visible spectrum. In this…
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Thanks to their record high refractive index and giant optical anisotropy, van der Waals (vdW) materials have accelerated the development of nanophotonics. However, traditional high refractive index materials, such as titanium dioxide (TiO2), still dominate in the most important visible range. This is due to the current lack of transparent vdW materials across the entire visible spectrum. In this context, we propose that germanium disulfide (GeS2) could offer a significant breakthrough. With its high refractive index, negligible losses, and biaxial optical anisotropy across the whole visible range, GeS2 has the potential to complement TiO2 and close the application gap of vdW materials in the visible spectrum. The addition of GeS2 could have a profound impact on the design of van der Waals nanophotonic circuits for any operation wavelength from ultraviolet to infrared, emphasizing the significance of the potential impact of GeS2 on the field of nanophotonics.
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Submitted 11 October, 2024;
originally announced October 2024.
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Exploring van der Waals materials with high anisotropy: geometrical and optical approaches
Authors:
Aleksandr S. Slavich,
Georgy A. Ermolaev,
Mikhail K. Tatmyshevskiy,
Adilet N. Toksumakov,
Olga G. Matveeva,
Dmitriy V. Grudinin,
Arslan Mazitov,
Konstantin V. Kravtsov,
Alexander V. Syuy,
Dmitry M. Tsymbarenko,
Mikhail S. Mironov,
Sergey M. Novikov,
Ivan Kruglov,
Davit A. Ghazaryan,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Kostya S. Novoselov
Abstract:
The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family…
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The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Submitted 5 September, 2023;
originally announced September 2023.
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Ultrathin and ultrasmooth gold films on monolayer MoS2
Authors:
Dmitry I. Yakubovsky,
Yury V. Stebunov,
Roman V. Kirtaev,
Georgy A. Ermolaev,
Mikhail S. Mironov,
Sergey M. Novikov,
Aleksey V. Arsenin,
Valentyn S. Volkov
Abstract:
Sub-10 nm continuous metal films are promising candidates for flexible and transparent nanophotonics and optoelectronics applications. In this Letter, we demonstrate that monolayer MoS2 is a perspective adhesion layer for the deposition of continuous conductive gold films with a thickness of only 3-4 nm. Optical properties of continuous ultrathin gold films deposited on two-dimensional MoS2 grown…
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Sub-10 nm continuous metal films are promising candidates for flexible and transparent nanophotonics and optoelectronics applications. In this Letter, we demonstrate that monolayer MoS2 is a perspective adhesion layer for the deposition of continuous conductive gold films with a thickness of only 3-4 nm. Optical properties of continuous ultrathin gold films deposited on two-dimensional MoS2 grown by chemical vapor deposition are investigated by spectroscopic ellipsometry over a wide wavelength range (300-3300 nm). Results show that optical losses in ultrathin films increase with decreasing thickness due to the fine-grained structure and the presence of a small number of voids, however, they exhibit metallic properties down to a thickness of 3-4 nm. The atomic-scale MoS2 interfaces can be transferred to any substrate and thus open up new opportunities for the creation of metasurfaces and a new type of van der Waals heterostructures with atomically thin metal layers.
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Submitted 29 December, 2018;
originally announced December 2018.
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Mechanisms of arsenic clustering in silicon
Authors:
F. F. Komarov,
O. I. Velichko,
V. A. Dobrushkin,
A. M. Mironov
Abstract:
A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number…
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A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number of the negatively charged clusters incorporating a point defect and one or more arsenic atoms are investigated. It is shown that for the doubly negatively charged clusters or for clusters incorporating more than one arsenic atom the electron density reaches a maximum value and then monotonically and slowly decreases as total arsenic concentration increases. In the case of doubly negatively charged cluster incorporating two arsenic atoms, the calculated electron density agrees well with the experimental data. Agreement with the experiment confirms the conclusion that two arsenic atoms participate in the cluster formation. Among all present models, the proposed model of clustering by formation of doubly negatively charged cluster incorporating two arsenic atoms gives the best fit to the experimental data and can be used in simulation of high concentration arsenic diffusion.
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Submitted 21 November, 2006; v1 submitted 26 December, 2005;
originally announced December 2005.
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Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation
Authors:
O. I. Velichko,
A. M. Mironov,
V. A. Tsurko,
G. M. Zayats
Abstract:
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a re…
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The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data.
Keywords: diffusion; clusters; ion implantation; arsenic; silicon
PACS: 66.30.Jt
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Submitted 9 November, 2006; v1 submitted 30 September, 2005;
originally announced September 2005.
