Showing 1–36 of 36 results for author: Mironov, A

Bulk superinsulation and polar nematic order in nanopatterned NbTiN

Authors: A. Yu. Mironov, C. A. Trugenberger, M. C. Diamantini, D. A. Nasimov, V. M. Vinokur

Abstract: We present an experimental evidence of 3D superinsulation in a nanopatterned slab of NbTiN, given by the Vogel-Fulcher-Tamman (VFT) scaling of the conductance when approaching the critical temperature from above and by the vanishing of the conductance below the transition. In the electric Meissner state, we find polar nematic order arising from ferroelectric alignement of short electric strings ex… ▽ More We present an experimental evidence of 3D superinsulation in a nanopatterned slab of NbTiN, given by the Vogel-Fulcher-Tamman (VFT) scaling of the conductance when approaching the critical temperature from above and by the vanishing of the conductance below the transition. In the electric Meissner state, we find polar nematic order arising from ferroelectric alignement of short electric strings excited by external electromagnetic fields. Our results prove that superinsulation appears also in ordered structures provided that these are large enough, thereby confirming the origin of superinsulation as electric confinement, independent of disorder. △ Less

Submitted 14 May, 2025; originally announced May 2025.

Journal ref: Nature Communications 16:4395 (2025)

Relaxation electrodynamics of superinsulators

Authors: A. Mironov, M. C. Diamantini, C. A. Trugenberger, V. M. Vinokur

Abstract: Superinsulators offer a unique laboratory realizing strong interaction phenomena like confinement and asymptotic freedom in quantum materials. Recent experiments evidenced that superinsulators are the mirror-twins of superconductors with reversed electric and magnetic field effects. Cooper pairs and Cooper holes in the superinsulator are confined into neutral electric pions by electric strings, wi… ▽ More Superinsulators offer a unique laboratory realizing strong interaction phenomena like confinement and asymptotic freedom in quantum materials. Recent experiments evidenced that superinsulators are the mirror-twins of superconductors with reversed electric and magnetic field effects. Cooper pairs and Cooper holes in the superinsulator are confined into neutral electric pions by electric strings, with the Cooper pairs playing the role of quarks. Here we report the non-equilibrium relaxation of the electric pions in superinsulating films. We find that the time delay $t_{\mathrm{sh}}$ of the current passage in the superinsulator is related to the applied voltage $V$ via the power law, $t_{\mathrm{sh}}\propto (V-V_{\mathrm p})^{-μ}$, where $V_{\mathrm p}$ is the effective threshold voltage. Two distinct critical exponents, $μ=1/2$ and $μ=3/4$, correspond to jumps from the electric Meissner state to the mixed state and to the superinsulating resistive state with broken charge confinement, respectively. The $μ=1/2$ value establishes a direct experimental evidence for the electric strings' linear potential confining the charges of opposite signs in the electric Meissner state and effectively rules out disorder-induced localization as a mechanism for superinsulation. We further report the memory effects and their corresponding dynamic critical exponents arising upon the sudden reversal of the applied voltage. Our observations open routes for exploring fundamental strong interaction charge confinement via desktop experiments. △ Less

Submitted 19 November, 2022; v1 submitted 2 July, 2022; originally announced July 2022.

Journal ref: Scientific Reports 12:19918 (2022)

New spin-polarized electron source based on alkali-antimonide photocathode

Authors: V. S. Rusetsky, V. A. Golyashov, S. V. Eremeev, D. A. Kustov, I. P. Rusinov, T. S. Shamirzaev, A. V. Mironov, A. Yu. Demin, O. E. Tereshchenko

Abstract: New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution.… ▽ More New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution. In the Na$_2$KSb/Cs$_3$Sb photocathode, spin-dependent photoemission properties were established through detection of high degree of photoluminescence polarization and high polarization of the photoemitted electrons. It was found that the multi-alkali photocathode can provide electron beams with emittance very close to the limits imposed by the electron thermal energy. The vacuum tablet-type sources of spin-polarized electrons have been proposed for accelerators, that can exclude the construction of the photocathode growth chambers for photoinjectors. △ Less

Submitted 7 May, 2022; originally announced May 2022.

Comments: 9 pages, 7 figures

Magnetic field inside the metal induced by anisotropic electronic pressure

Authors: I. V. Oladyshkin, D. A. Fadeev, V. A. Mironov

Abstract: We show theoretically that anisotropy of electronic distribution function inside the laser-irradiated metal leads to the formation of edge currents at the timescale of distribution isotropization. When the electronic pressure in the skin-layer is anisotropic, pressure gradient appears to be non-potential force effectively producing low-frequency magnetic field. In typical experiments with femtosec… ▽ More We show theoretically that anisotropy of electronic distribution function inside the laser-irradiated metal leads to the formation of edge currents at the timescale of distribution isotropization. When the electronic pressure in the skin-layer is anisotropic, pressure gradient appears to be non-potential force effectively producing low-frequency magnetic field. In typical experiments with femtosecond laser pumping generated internal magnetic field can rich magnitude up to ~1 Tesla in non-damaging interaction regime. We demonstrate that this field is localized inside the metal, while just a minor part of its energy can be radiated into free space as a sub-terahertz signal. △ Less

Submitted 10 May, 2020; originally announced May 2020.

Comments: 9 pages, 5 figures

Superconductivity in a disordered metal with Coulomb interactions

Authors: Svetlana V. Postolova, Alexey Yu. Mironov, Víctor Barrena, Jose Benito-Llorens, Jose Gabriel Rodrigo, Hermann Suderow, Mikhail R. Baklanov, Tatyana I. Baturina, Valerii M. Vinokur

Abstract: We study the electronic densities of states (DOS) of strongly disordered superconducting thin films of TiN. We find, using Scanning Tunneling Microscopy (STM) that the DOS decreases towards the Fermi level in the normal phase obtained by applying magnetic fields. The DOS shows spatial fluctuations whose length scale is related to the energy dependent DOS and is similar in normal and superconductin… ▽ More We study the electronic densities of states (DOS) of strongly disordered superconducting thin films of TiN. We find, using Scanning Tunneling Microscopy (STM) that the DOS decreases towards the Fermi level in the normal phase obtained by applying magnetic fields. The DOS shows spatial fluctuations whose length scale is related to the energy dependent DOS and is similar in normal and superconducting phases. This suggests that Coulomb interactions lead to a spatially varying DOS in the normal phase of a disordered superconductor. △ Less

Submitted 3 June, 2020; v1 submitted 3 March, 2020; originally announced March 2020.

Journal ref: Phys. Rev. Research 2, 033307 (2020)

Low-temperature formation of platinum silicides on polycrystalline silicon

Authors: Kirill V. Chizh, Vladimir P. Dubkov, Vyacheslav M. Senkov, Igor V. Pirshin, Larisa V. Arapkina, Sergey A. Mironov, Andrey S. Orekhov, Vladimir A. Yuryev

Abstract: Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperat… ▽ More Phase formation and transitions in platinum silicide films on polycrystalline Si in the process of Pt magnetron sputtering and heat treatments at different temperatures are studied using X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and X-ray diffractometry. Phases of amorphous and polycrystalline Pt$_3$Si and Pt$_2$Si are shown to form during the room-temperature Pt deposition on poly-Si beneath the Pt layer. The relaxation of the interfacial film and partial transformation of Pt$_3$Si into Pt$_2$Si occurs as a result of the thermal treatment for 30 minutes in the temperature range from 125 to 300$^{\circ}$C. The Pt$_3$Si and Pt$_2$Si phases crystallize to PtSi due to annealing at the temperatures from 320 to 480$^{\circ}$C for the same time period. △ Less

Submitted 28 February, 2020; v1 submitted 25 February, 2020; originally announced February 2020.

Comments: 34 pages, 8 figures, 3 tables

Journal ref: Journal of Alloys and Compounds 843 (2020) 155908

Superconducting phase transitions in disordered NbTiN films

Authors: M. V. Burdastyh, S. V. Postolova, T. Proslier, S. S. Ustavshikov, A. V. Antonov, V. M. Vinokur, A. Yu. Mironov

Abstract: The suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate the superconducting niobium-titanium-nitride (Nb_{1-x}Ti_{x}N) thin films grown by atomic layer deposition (ALD) where disorder is controlled by the slight tuning of the ALD process parameters. We observe the smooth crossover from the disorder-driven superconductor-n… ▽ More The suppression of superconductivity in disordered systems is a fundamental problem of condensed matter physics. Here we investigate the superconducting niobium-titanium-nitride (Nb_{1-x}Ti_{x}N) thin films grown by atomic layer deposition (ALD) where disorder is controlled by the slight tuning of the ALD process parameters. We observe the smooth crossover from the disorder-driven superconductor-normal metal transition (often reffered to as fermionic mechanism) to the case where bosonic mechanism dominates and increasing disorder leads to formation of metal with Cooper pairing. We show that, in moderately disordered films, the transition to zero-resistance state occurs in a full agreement with the conventional theories of superconducting fluctuations and Berezinskii-Kosterlitz-Thouless transition. However, the critically disordered films violate this accord showing low-temperature features possibly indicating the Bose metal phase. We show that it is the interrelation between film's sheet resistance in the maximum, R_{max}, of the resistive curve R(T) and R_q = h/4e^2 that distinguishes between these two behaviors. We reveal the characteristic features in magnetoresistance of the critically disordered films with R_{max} > R_q △ Less

Submitted 1 December, 2019; v1 submitted 30 August, 2019; originally announced September 2019.

Comments: 8 pages, 3 figures

Direct probe of the interior of an electric pion in a Cooper pair superinsulator

Authors: M. C. Diamantini, S. V. Postolova, A. Yu. Mironov, L. Gammaitoni, C. Strunk, C. A. Trugenberger, V. M. Vinokur

Abstract: The nature of hadrons is one of the most fundamental mysteries of physics. It is generally agreed that they are made of "colored" quarks, which move nearly free at short scales but are confined inside hadrons by strong interactions at large distances. Because of confinement, quarks are never directly observable and, experimentally, their properties can be tested only indirectly, via high energy co… ▽ More The nature of hadrons is one of the most fundamental mysteries of physics. It is generally agreed that they are made of "colored" quarks, which move nearly free at short scales but are confined inside hadrons by strong interactions at large distances. Because of confinement, quarks are never directly observable and, experimentally, their properties can be tested only indirectly, via high energy collisions. Here we show that superinsulating films realize a complete, one-color model system of hadron physics with Cooper pairs playing the role of quarks. We report measurements on highly controlled NbTiN films that provide a window into the interior of "Cooper pair mesons" and present the first direct evidence of asymptotic freedom, `t Hooft's dual superconductivity confinement mechanism, and magnetic monopoles. △ Less

Submitted 27 August, 2020; v1 submitted 28 June, 2019; originally announced June 2019.

Journal ref: Nature Comm. Phys. 3:142 (2020)

Bosonic topological insulator intermediate state in the superconductor-insulator transition

Authors: M. C. Diamantini, A. Yu. Mironov, S. V. Postolova, X. Liu, Z. Hao, D. M. Silevitch, Ya. Kopelevich, P. Kim, C. A. Trugenberger, V. M. Vinokur

Abstract: A low-temperature intervening metallic regime arising in the two-dimensional superconductor-insulator transition challenges our understanding of electronic fluids. Here we develop a gauge theory revealing that this emergent anomalous metal is a bosonic topological insulator where bulk transport is suppressed by mutual statistics interactions between out-of-condensate Cooper pairs and vortices and… ▽ More A low-temperature intervening metallic regime arising in the two-dimensional superconductor-insulator transition challenges our understanding of electronic fluids. Here we develop a gauge theory revealing that this emergent anomalous metal is a bosonic topological insulator where bulk transport is suppressed by mutual statistics interactions between out-of-condensate Cooper pairs and vortices and the longitudinal conductivity is mediated by symmetry-protected gapless edge modes. We explore the magnetic-field-driven superconductor-insulator transition in a niobium titanium nitride device and find marked signatures of a bosonic topological insulator behavior of the intervening regime with the saturating resistance. The observed superconductor-anomalous metal and insulator-anomalous metal dual phase transitions exhibit quantum Berezinskii-Kosterlitz-Thouless criticality in accord with the gauge theory. △ Less

Submitted 31 August, 2019; v1 submitted 19 June, 2019; originally announced June 2019.

Comments: 10 pages, 5 figures

Journal ref: Phys. Lett. A 384 (2020) 126570

Charge Berezinskii-Kosterlitz-Thouless transition in superconducting NbTiN films

Authors: Alexey Yu. Mironov, Daniel M. Silevitch, Thomas Proslier, SvetlanaV. Postolova, Maria V. Burdastyh, Anton K. Gutakovskii, Thomas F. Rosenbaum, Valerii M. Vinokur, Tatyana I. Baturina

Abstract: A half-century after the discovery of the superconductor-insulator transition (SIT), one of the fundamental predictions of the theory, the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that is expected to occur at the insulating side of the SIT, has remained unobserved. The charge BKT transition is a phenomenon dual to the vortex BKT transition, which is at the heart of the very existenc… ▽ More A half-century after the discovery of the superconductor-insulator transition (SIT), one of the fundamental predictions of the theory, the charge Berezinskii-Kosterlitz-Thouless (BKT) transition that is expected to occur at the insulating side of the SIT, has remained unobserved. The charge BKT transition is a phenomenon dual to the vortex BKT transition, which is at the heart of the very existence of two-dimensional superconductivity as a zero-resistance state appearing at finite temperatures. The dual picture points to the possibility of the existence of a superinsulating state endowed with zero conductance at finite temperature. Here, we report the observation of the charge BKT transition on the insulating side of the SIT, identified by the critical behavior of the resistance. We find that the critical temperature of the charge BKT transition depends on the magnetic field exhibiting first the fast growth and then passing through the maximum at fields much less than the upper critical field. Finally, we ascertain the effects of the finite electrostatic screening length and its divergence at the magnetic field-tuned approach to the superconductor-insulator transition. △ Less

Submitted 30 July, 2017; originally announced July 2017.

Comments: 9 pages, 6 figures

Point-contact studies of semiconductor $PbTe-PbS$ superconducting superlattice as a model of HTS

Authors: N. L. Bobrov, L. F. Rybal'chenko, V. V. Fisun, I. K. Yanson, O. A. Mironov, S. V. Chistyakov, V. V. Zorchenko, A. Yu. Sipatov, A. I. Fedorenko

Abstract: Superconducting (SC) superlattices (SL) of the epitaxial semiconductor $PbTe-PbS$/(001) $KCl$ with two-dimensional ordered misfit dislocation (MD) networks across heteroboundaries (HB) are studied, and the obtained results are compared with the corresponding data for $YBaCuO$. An analysis of the fluctuational region showed that the pairing of electrons in SL takes place at the sites of dislocation… ▽ More Superconducting (SC) superlattices (SL) of the epitaxial semiconductor $PbTe-PbS$/(001) $KCl$ with two-dimensional ordered misfit dislocation (MD) networks across heteroboundaries (HB) are studied, and the obtained results are compared with the corresponding data for $YBaCuO$. An analysis of the fluctuational region showed that the pairing of electrons in SL takes place at the sites of dislocation networks. In the region of SC fluctuations, the IVC derivatives of point-contacts (PC) based on SL and HTS display a metal-insulator transition associated with delocalization of carriers from the vicinity of the structural elements responsible for the emergence of SC. The critical current density in a superlattice is determined, and a mechanism is proposed for formation of excess current on the IVC of PC based on SL and HTS. The values of the energy gap $Δ_0$ at low temperatures in units of $kT_c$ are found to be anomalously large for SL and HTS. For anisotropic three-dimensional SL with a strong bond between two-dimensional SC planes, two gaps emerge from the MD. For quasi-two-dimensional SL with a weak bond between two-dimensional SC planes, the $Δ(T)$ dependence is nonmonotonic, and the fluctuation region for these SL and for HTS reveals a gap that is practically independent of temperature. The IVC derivatives of a $Cu$-SL PC reveal an oscillating structure which is restricted to an energy of $90\ meV$ and is apparently associated with the electron-phonon interaction. It is assumed that there is a similarity between the SC mechanisms in SL and HTS. pacs 73.40.Jn, 74.25.Kc, 74.45.+c, 74.50.+r., 73.40.-c, 74.78.-w, 74.78.Fk, 74.20.Mn, 74.40.+k.-n, 74.45.+c, 74.62.Dn, 74.70.Ad △ Less

Submitted 9 January, 2017; v1 submitted 20 November, 2016; originally announced November 2016.

Comments: 21 pages, 14 figures

Journal ref: Fiz. Nizk. Temp., 16, 1531 (1990); Sov. J. Low Temp. Phys., 16, 862 (1990)

Point-contact measurements of the energy gap of lead-chalcogenide-based superconducting superlattices

Authors: I. K. Yanson, N. L. Bobrov, L. F. Rybal'chenko, V. V. Fisun, O. A. Mironov, S. V. Chistyakov, A. Yu. Sipatov, A. I. Fedorenko

Abstract: The energy gap of superconducting $PbTe-PbS$ semiconductor superlattices has been analyzed with the help of point contacts for the first time below the critical temperature, $T_{c}=3.9~K$, and in the fluctuation region $T>T_{c}$. The size of the gap and its dependence on the temperature and field are determined by the position of the point contact inside the superlattice. \pacs{73.40.Jn, 74.25.Kc,… ▽ More The energy gap of superconducting $PbTe-PbS$ semiconductor superlattices has been analyzed with the help of point contacts for the first time below the critical temperature, $T_{c}=3.9~K$, and in the fluctuation region $T>T_{c}$. The size of the gap and its dependence on the temperature and field are determined by the position of the point contact inside the superlattice. \pacs{73.40.Jn, 74.25.Kc, 74.45.+c, 74.50.+r., 73.40.-c, 74.78.-w, 74.78.Fk, 74.20.Mn, 74.40.+k.-n, 74.45.+c, 74.62.Dn, 74.70.Ad △ Less

Submitted 9 January, 2017; v1 submitted 20 November, 2016; originally announced November 2016.

Comments: 4 pages, 3 figures

Journal ref: Pis'ma Zh.Eksp.Teor.Fiz., 49, No.5, 293 (1989); JETP Letters, 49, No.5, 335 (1989)

Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

Authors: V. P. Dubkov, S. A. Mironov, K. V. Chizh, V. A. Yuryev

Abstract: We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt an… ▽ More We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching. △ Less

Submitted 18 July, 2016; originally announced July 2016.

Comments: 3 pages, 3 figures

Journal ref: Journal of Physics: Conference Series 816(1), 012011 (2017)

Fractional Quantum Hall States in a Ge Quantum Well

Authors: O. A. Mironov, N. d'Ambrumenil, A. Dobbie, A. V. Suslov, E. Green, D. R. Leadley

Abstract: Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across sad… ▽ More Measurements of the Hall and dissipative conductivity of a strained Ge quantum well on a SiGe/(001)Si substrate in the quantum Hall regime are reported. We find quantum Hall states in the Composite Fermion family and a precursor signal at filling fraction $ν=5/2$. We analyse the results in terms of thermally activated quantum tunneling of carriers from one internal edge state to another across saddle points in the long range impurity potential. This shows that the gaps for different filling fractions closely follow the dependence predicted by theory. We also find that the estimates of the separation of the edge states at the saddle are in line with the expectations of an electrostatic model in the lowest spin-polarised Landau level (LL), but not in the spin-reversed LL where the density of quasiparticle states is not high enough to accommodate the carriers required. △ Less

Submitted 20 May, 2016; v1 submitted 22 December, 2015; originally announced December 2015.

Comments: 5 pages, 4 figures, supplemental material 2 pages, 1 figure

Journal ref: Phys. Rev. Lett. 116, 176802 (2016)

Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers

Authors: V. A. Yuryev, K. V. Chizh, V. A. Chapnin, S. A. Mironov, V. P. Dubkov, O. V. Uvarov, V. P. Kalinushkin, V. M. Senkov, O. Y. Nalivaiko, A. G. Novikau, P. I. Gaiduk

Abstract: Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. L… ▽ More Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si$_3$N$_4$/SiO$_2$/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about $-$2%/$^{\circ}$C in the temperature interval from 25 to 50$^{\circ}$C. △ Less

Submitted 13 May, 2015; v1 submitted 19 March, 2015; originally announced March 2015.

Comments: 10 pages, 11 figures, 2 tables; version accepted for publication in J. Appl. Phys

Journal ref: J. Appl. Phys. 117, 204502 (2015)

In-plane magnetic field effect on hole cyclotron mass and $g_z$ factor in high-mobility SiGe/Ge/SiGe structures

Authors: I. L. Drichko, V. A. Malysh, I. Yu. Smirnov, L. E. Golub, S. A. Tarasenko, A. V. Suslov, O. A. Mironov, M. Kummer, H. von Känel

Abstract: The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt… ▽ More The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of 30 and 85~MHz and magnetic fields $B$ of up to 18 T in the temperature range of 0.3 -- 5.8 K. The acoustic effects were also measured as a function of the tilt angle of the magnetic field with respect to the normal of the two-dimensional channel at $T$=0.3 K. It is shown, that at the minima of the conductivity oscillations, holes are localized on the Fermi level, and that there is a temperature domain in which the high-frequency conductivity in the bulk of the quantum well is of the activation nature. The analysis of the temperature dependence of the conductivity at odd filling factors enables us to determine the effective $g_z$ factor. It is shown that the in-plane component of the magnetic field leads to an increase of the cyclotron mass and to a reduction of the $g_z$ factor. We developed a microscopic theory of these effects for the heavy-hole states of the complex valence band in quantum wells which describes well the experimental findings. △ Less

Submitted 13 November, 2014; originally announced November 2014.

Comments: 9 pages, 10 figures

Journal ref: Phys. Rev. B 90, 125436 (2014)

Hall field-induced resistance oscillations in Ge/SiGe quantum wells

Authors: Q. Shi, M. A. Zudov, O. A. Mironov, D. R. Leadley

Abstract: We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hal… ▽ More We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^\star \approx 0.09\,m_0$, obtained from microwave photoresistance in the same sample. △ Less

Submitted 5 May, 2014; originally announced May 2014.

Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells

Authors: M. A. Zudov, O. A. Mironov, Q. A. Ebner, P. D. Martin, Q. Shi, D. R. Leadley

Abstract: Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized t… ▽ More Microwave-induced resistance oscillations (MIRO) have been extensively studied for more than a decade but, until now, have remained unique to GaAs/AlGaAs-based 2D electron systems. Here, we report on the first observation of MIRO in a 2D hole gas hosted in Ge/SiGe quantum well. Our findings confirm that MIRO is a universal phenomenon and demonstrate that microwave photoresistance can be utilized to probe the energy spectrum and the correlation effects of 2D holes in Ge/SiGe quantum wells. △ Less

Submitted 5 May, 2014; originally announced May 2014.

Journal ref: Physical Review B 89, 125401 (2014)

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields

Authors: I. L. Drichko, V. A. Malysh, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, M. Kummer, H. von Känel

Abstract: The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at tempera… ▽ More The contactless Surface Acoustic Wave (SAW) technique was implemented to probe the high-frequency (ac) conductivity in a high-mobility $p$-SiGe/Ge/SiGe structure in the integer quantum Hall (IQHE) regime. The structure was grown by low-energy plasma-enhanced chemical vapor deposition and comprised a two-dimensional channel formed in a compressively strained Ge layer. It was investigated at temperatures of 0.3 - 5.8 K and magnetic fields up to 18 T at various SAW intensities. In the IQHE regime, in minima of the conductivity oscillations with small filling factors, holes are localized. The ac conductivity is of the hopping nature and can be described within the "two-site" model. Furthermore, the dependence of the ac conductivity on the electric field of the SAW was determined. The manifestation of non-linear effects is interpreted in terms of nonlinear percolation-based conductivity. △ Less

Submitted 11 December, 2013; originally announced December 2013.

Comments: 6 pages, 10 figures

Journal ref: JAP 114, 074302 (2013)

Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II

Authors: I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, D. R. Leadley

Abstract: The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This tran… ▽ More The magnetoresistance components $ρ_{xx}$ and $ρ_{xy}$ were measured in two p-Si/SiGe/Si quantum wells that have an anisotropic g-factor in a tilted magnetic field as a function of temperature, field and tilt angle. Activation energy measurements demonstrate the existence of a ferromagnetic-paramagnetic (F-P) transition for a sample with a hole density of $p$=2$\times10^{11}$\,cm$^{-2}$. This transition is due to crossing of the 0$\uparrow$ and 1$\downarrow$ Landau levels. However, in another sample, with $p$=7.2$\times10^{10}$\,cm$^{-2}$, the 0$\uparrow$ and 1$\downarrow$ Landau levels coincide for angles $Θ$=0-70$^{\text{o}}$. Only for $Θ$ > 70$^{\text{o}}$ do the levels start to diverge which, in turn, results in the energy gap opening. △ Less

Submitted 5 April, 2012; originally announced April 2012.

Comments: 5 pages, 6 figures

Superconducting phase transitions in ultrathin TiN films

Authors: T. I. Baturina, S. V. Postolova, A. Yu. Mironov, A. Glatz, M. R. Baklanov, V. M. Vinokur

Abstract: We investigate transition to the superconducting state in the ultrathin titanium nitride films on approach to superconductor-insulator transition. Building on the complete account of quantum contributions to conductivity, we demonstrate that the resistance of thin superconducting films exhibits a non-monotonic temperature behaviour due to the competition between weak localization, electron-electro… ▽ More We investigate transition to the superconducting state in the ultrathin titanium nitride films on approach to superconductor-insulator transition. Building on the complete account of quantum contributions to conductivity, we demonstrate that the resistance of thin superconducting films exhibits a non-monotonic temperature behaviour due to the competition between weak localization, electron-electron interaction, and superconducting fluctuations. We show that superconducting fluctuations give rise to an appreciable decrease in the resistance even at temperatures well exceeding the superconducting transition temperature, T_c, with this decrease being dominated by the Maki-Thompson process.The transition to a global phase-coherent superconducting state occurs via the Berezinskii-Kosterlitz-Thouless (BKT) transition, which we observe both by power-law behaviour in current-voltage characteristics and by flux flow transport in the magnetic field. The ratio T_{BKT}/T_c follows the universal Beasley-Mooij-Orlando relation. Our results call for revisiting the past data on superconducting transition in thin disordered films. △ Less

Submitted 24 September, 2011; originally announced September 2011.

Comments: 6 pages, 4 figures

Journal ref: EPL 97, 17012 (2012)

Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor

Authors: I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, D. R. Leadley

Abstract: Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si cha… ▽ More Magnetoresistivity $ρ_{xx}$ and $ρ_{xy}$ and the acoustoelectronic effects are measured in $p$-Si/SiGe/Si with an impurity concentration $p$ = 2 $\times $ 10$^{11}$ cm$^{-2}$ in the temperature range 0.3-2.0 K and an tilted magnetic field up to 18 T. The dependence of the effective $g$-factor on the angle of magnetic field tilt $θ$ to the normal to the plane of a two dimensional $p$-Si/SiGe/Si channel is determined. A first order ferromagnet-paramagnet phase transition is observed in the magnetic fields corresponding to a filling factor $ν$ = 2 at $θ\approx $ 59$^\textrm{o}$-60$^\textrm{o}$. △ Less

Submitted 24 November, 2010; originally announced November 2010.

Comments: 8 pages, 13 figures

Journal ref: JETP, 2010, Vol. 111, No. 3, pp. 495-502

Nanopattern-stimulated superconductor-insulator transition in thin TiN films

Authors: T. I. Baturina, V. M. Vinokur, A. Yu. Mironov, N. M. Chtchelkatchev, D. A. Nasimov, A. V. Latyshev

Abstract: We present the results of the comparative study of the influence of disorder on transport properties in continuous and nanoperforated TiN films. We show that nanopatterning turns a thin TiN film into an array of superconducting weak links and stimulates both, the disorder- and magnetic field-driven superconductor-to-insulator transitions, pushing them to lower degree of disorder. We find that nano… ▽ More We present the results of the comparative study of the influence of disorder on transport properties in continuous and nanoperforated TiN films. We show that nanopatterning turns a thin TiN film into an array of superconducting weak links and stimulates both, the disorder- and magnetic field-driven superconductor-to-insulator transitions, pushing them to lower degree of disorder. We find that nanopatterning enhances the role of the two-dimensional Coulomb interaction in the system transforming the originally insulating film into a more pronounced insulator. We observe magnetoresistance oscillations reflecting collective behaviour of the multiconnected nanopatterned superconducting film in the wide range of temperatures and uncover the physical mechanism of these oscillations as phase slips in superconducting weak link network. △ Less

Submitted 6 November, 2010; originally announced November 2010.

Comments: 6 pages, 4 figures

Journal ref: EPL, 93 (2011) 47002

Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields

Authors: I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, D. R. Leadley

Abstract: We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel… ▽ More We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ and $ρ_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measurements of $ρ_{xx}$ and $ρ_{xy}$ in the tilted magnetic field showed that the anomaly in $ρ_{xx}$, observed at filling factor $ν$=3/2 is practically nonexistent in the conductivity $σ_{xx}$. The anomaly in $σ_{xx}$ at $ν$=2 might be explained by overlapping of the levels with different spins 0$\uparrow$ and 1$\downarrow$ when the tilt angle of the applied magnetic field is changed. The dependence of g-factor $g^*(Θ)/g^*(0^0)$ on the tilt angle $Θ$ was determined. △ Less

Submitted 15 October, 2009; originally announced October 2009.

Comments: 4 pages, 6 figs, to appear in Annalen der Physik

Acoustoelectric effects in very high-mobility $p$-SiGe/Ge/SiGe heterostructure

Authors: I. L. Drichko, A. M. Diakonov, E. V. Lebedeva, I. Yu. Smirnov, O. A. Mironov, M. Kummer, H. von Känel

Abstract: Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW inte… ▽ More Measurement results of the acoustoelectric effects (surface acoustic waves (SAW) attenuation and velocity) in a high-mobility $p$-SiGe/Ge/SiGe structure are presented. The structure was LEPECVD grown with a two dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5 - 4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time $τ_{\varepsilon}$ and the deformation potential constant determined. △ Less

Submitted 15 June, 2009; originally announced June 2009.

Comments: 5 pages, 7 figures, 1 table

Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition

Authors: T. I. Baturina, A. Yu. Mironov, V. M. Vinokur, M. R. Baklanov, C. Strunk

Abstract: We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence of distinct regimes upon decreasing temperature crossing over from logarithmic to activated behavior with the variable-range hopping squeezing in between. In… ▽ More We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence of distinct regimes upon decreasing temperature crossing over from logarithmic to activated behavior with the variable-range hopping squeezing in between. In perpendicular magnetic fields below 2 T, the thermally activated regime retains at intermediate temperatures, whereas at ultralow temperatures, the resistance increases faster than that of the thermally activated type. This indicates a change of the mechanism of the conductivity. We find that at higher magnetic fields the thermally activated behavior disappears and the magnetoresistive isotherms saturate towards the value close to quantum resistance h/e^2. △ Less

Submitted 2 February, 2009; v1 submitted 24 October, 2008; originally announced October 2008.

Comments: revtex4 file, 6 pages, 4 figures (published)

Journal ref: Pis'ma v ZhETF 88, 867 (2008) [JETP Lett. 88, 752 (2008)]

Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field

Authors: I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, O. A. Mironov, D. R. Leadley

Abstract: We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-p… ▽ More We report the results of an experimental study of the magnetoresistance $ρ_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional (2D) channel plane at two orientations of the in-plane magnetic field $B_{\parallel}$ against the current $I$: $B_{\parallel} \perp I$ and $B_{\parallel} \parallel I$. In the sample with the lowest density in the magnetic field range of 0-7.2 T the temperature dependence of $ρ_{xx}$ demonstrates the metallic characteristics ($d ρ_{xx}/dT>$0). However, at $B_{\parallel}$ =7.2 T the derivative $d ρ_{xx}/dT$ reverses the sign. Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. At $B_{\parallel} \cong$ 13 T there is a transition from the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}^2$ to the dependence $\ln(Δρ_{xx} / ρ_{0})\propto B_{\parallel}$. The observed effects can be explained by the influence of the in-plane magnetic field on the orbital motion of the charge carriers in the quasi-2D system. △ Less

Submitted 27 April, 2009; v1 submitted 17 July, 2008; originally announced July 2008.

Comments: revised: included AC conductivity experiments to study the role of localized state in transport; total 6 pages, 7 figures. Accepted PRB; to appear vol.79, Issue 20

Magnetotransport in low-density $p$-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass

Authors: I. L. Drichko, A. M. Dyakonov, I. Yu. Smirnov, A. V. Suslov, Y. M. Galperin, V. Vinokur, M. Myronov, O. A. Mironov, D. R. Leadley

Abstract: We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolutio… ▽ More We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor $ν$=1) to formation of the Wigner glass in the extreme quantum limit ($B\gtrsim 14$, $T \lesssim 0.8$ K). △ Less

Submitted 5 December, 2007; originally announced December 2007.

Comments: 11 pages, 14 figures

Localized Superconductivity in the Quantum-Critical Region of the Disorder-Driven Superconductor-Insulator Transition in TiN Thin Films

Authors: T. I. Baturina, A. Yu. Mironov, V. M. Vinokur, M. R. Baklanov, C. Strunk

Abstract: We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in… ▽ More We investigate low-temperature transport properties of thin TiN superconducting films in the vicinity of the disorder-driven superconductor-insulator transition. In a zero magnetic field, we find an extremely sharp separation between superconducting and insulating phases, evidencing a direct superconductor-insulator transition without an intermediate metallic phase. At moderate temperatures, in the insulating films we reveal thermally activated conductivity with the magnetic field-dependent activation energy. At very low temperatures, we observe a zero-conductivity state, which is destroyed at some depinning threshold voltage V_T. These findings indicate formation of a distinct collective state of the localized Cooper pairs in the critical region at both sides of the transition. △ Less

Submitted 2 January, 2008; v1 submitted 11 May, 2007; originally announced May 2007.

Comments: 4 pages, 4 figures, published version

Journal ref: Physical Review Letters 99, 257003 (2007)

Mechanisms of arsenic clustering in silicon

Authors: F. F. Komarov, O. I. Velichko, V. A. Dobrushkin, A. M. Mironov

Abstract: A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number… ▽ More A model of arsenic clustering in silicon is proposed and analyzed. The main feature of the proposed model is the assumption that negatively charged arsenic complexes play a dominant role in the clustering process. To confirm this assumption, electron density and concentration of impurity atoms incorporated into the clusters are calculated as functions of the total arsenic concentration. A number of the negatively charged clusters incorporating a point defect and one or more arsenic atoms are investigated. It is shown that for the doubly negatively charged clusters or for clusters incorporating more than one arsenic atom the electron density reaches a maximum value and then monotonically and slowly decreases as total arsenic concentration increases. In the case of doubly negatively charged cluster incorporating two arsenic atoms, the calculated electron density agrees well with the experimental data. Agreement with the experiment confirms the conclusion that two arsenic atoms participate in the cluster formation. Among all present models, the proposed model of clustering by formation of doubly negatively charged cluster incorporating two arsenic atoms gives the best fit to the experimental data and can be used in simulation of high concentration arsenic diffusion. △ Less

Submitted 21 November, 2006; v1 submitted 26 December, 2005; originally announced December 2005.

Comments: 13 pages, 4 figures. Revised and shortened version of the paper has been published in Phys. Rev. B, Vol.74 (3), art. no. 035205 (2006)

Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation

Authors: O. I. Velichko, A. M. Mironov, V. A. Tsurko, G. M. Zayats

Abstract: The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a re… ▽ More The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt △ Less

Submitted 9 November, 2006; v1 submitted 30 September, 2005; originally announced September 2005.

Comments: 3 pages, 1 figure, 7 references Submitted to the Internatiolal conference "Interaction of Radiation with Solids IRS-2005", Minsk, Belarus, September 28-30, 2005

High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime

Authors: I. L. Drichko, A. M. Diakonov, I. Yu. Smirnov, G. O. Andrianov, O. A. Mironov, M. Myronov, D. R. Leadley, T. E. Whall

Abstract: The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the… ▽ More The interaction of surface acoustic waves (SAW) with $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7$<T<$1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient $Γ$ and velocity change $ΔV /V$ were found to oscillate with filling factor. Both the real $σ_1$ and imaginary $σ_2$ components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of $σ_1$ to $σ_2$, carrier localization can be followed as a function of temperature and magnetic field. At $T$=0.7 K, the variations of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and can be explained by heating of the two dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening. △ Less

Submitted 19 November, 2004; originally announced November 2004.

Comments: Accepted for publication in PRB

Carbon substitution in MgB2 single crystals: structural and superconducting properties

Authors: S. M. Kazakov, R. Puzniak, K. Rogacki, A. V. Mironov, N. D. Zhigadlo, J. Jun, Ch. Soltmann, B. Batlogg, J. Karpinski

Abstract: Growth of carbon substituted magnesium diboride Mg(B1-xCx)2 single crystals with 0<x<0.15 is reported and the structural, transport, and magnetization data are presented. The superconducting transition temperature decreases monotonically with increasing carbon content in the full investigated range of substitution. By adjusting the nominal composition, Tc of substituted crystals can be tuned in… ▽ More Growth of carbon substituted magnesium diboride Mg(B1-xCx)2 single crystals with 0<x<0.15 is reported and the structural, transport, and magnetization data are presented. The superconducting transition temperature decreases monotonically with increasing carbon content in the full investigated range of substitution. By adjusting the nominal composition, Tc of substituted crystals can be tuned in a wide temperature range between 10 and 39 K. Simultaneous introduction of disorder by carbon substitution and significant increase of the upper critical field Hc2 is observed. Comparing with the non-substituted compound, Hc2 at 15K for x=0.05 is enhanced by more then a factor of 2 for H oriented both perpendicular and parallel to the ab-plane. This enhancement is accompanied by a reduction of the Hc2-anisotropy coefficient gamma from 4.5 (for non-substituted compound) to 3.4 and 2.8 for the crystals with x = 0.05 and 0.095, respectively. At temperatures below 10 K, the single crystal with larger carbon content shows Hc2 (defined at zero resistance) higher than 7 and 24 T for H oriented perpendicular and parallel to the ab-plane, respectively. Observed increase of Hc2 cannot be explained by the change in the coherence length due to disorder-induced decrease of the mean free path only. △ Less

Submitted 4 May, 2004; originally announced May 2004.

Comments: 22 pages, 9 figures, 4 tables

Journal ref: Phys. Rev. B 71, 024533 (2005)

Surface Acoustic Waves probe of the p-type Si/SiGe heterostructures

Authors: G. O. Andrianov, I. L. Drichko, A. M. Diakonov, I. Yu. Smirnov, O. A. Mironov, M. Myronov, T. E. Whall, D. R. Leadley

Abstract: The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real… ▽ More The surface acoustic wave (SAWs) attenuation coefficient $Γ$ and the velocity change $ΔV /V$ were measured for $p$-type Si/SiGe heterostructures in the temperature range 0.7 - 1.6 K as a function of external magnetic field $H$ up to 7 T and in the frequency range 30-300 MHz in the hole Si/SiGe heterostructures. Oscillations of $Γ$ (H) and $ΔV /V$ (H) in a magnetic field were observed. Both real $σ_1$ (H) and imaginary $σ_2$ (H) components of the high-frequency conductivity have been determined. Analysis of the $σ_1$ to $σ_2$ ratio allows the carrier localization to be followed as a function of temperature and magnetic field. At T=0.7 K the variation of $Γ$, $ΔV /V$ and $σ_1$ with SAW intensity have been studied and could be attributed to 2DHG heating by the SAW electric field. The energy relaxation time is found to be dominated by scattering at the deformation potential of the acoustic phonons with weak screening. △ Less

Submitted 30 January, 2004; originally announced January 2004.

Comments: RevTeX4; 4 figs

Single crystal growth and properties of MgB2 and Mg(B1-xCx)2

Authors: S. M. Kazakov, J. Karpinski, J. Jun, P. Geiser, N. D. Zhigadlo, R. Puzniak, A. V. Mironov

Abstract: Single crystals of MgB2 and Mg(B1-xCx)2 have been grown using cubic anvil technique. Tc values vary in a wide range (39-9 K) with carbon content varying from 0 up to 16%. Using SiC as the precursor leads to C and not to Si substituted crystals. Micro-hardness measurements performed on MgB2 single crystals give average value of 1100 kg/mm2. Single crystals of MgB2 and Mg(B1-xCx)2 have been grown using cubic anvil technique. Tc values vary in a wide range (39-9 K) with carbon content varying from 0 up to 16%. Using SiC as the precursor leads to C and not to Si substituted crystals. Micro-hardness measurements performed on MgB2 single crystals give average value of 1100 kg/mm2. △ Less

Submitted 29 April, 2003; originally announced April 2003.

Comments: 6 pages, 3 figures. submitted to Physica C (M2S-Rio proceedings)

Journal ref: Physica C 408-410, 123 (2004)

MgB2 single crystals: high pressure growth and anisotropic properties

Authors: J. Karpinski, M. Angst, J. Jun, S. M. Kazakov, R. Puzniak, A. Wisniewski, J. Roos, H. Keller, A. Perucchi, L. Degiorgi, M. Eskildsen, P. Bordet, L. Vinnikov, A. Mironov

Abstract: Single crystals of MgB2 with a size up to 1.5x0.9x0.2 mm3 have been grown with a high pressure cubic anvil technique. The crystal growth process is very peculiar and involves an intermediate nitride, namely MgNB9. Single crystals of BN and MgB2 grow simultaneously by a peritectic decomposition of MgNB9. Magnetic measurements in fields of 1-5 Oe show sharp transitions to the superconducting state… ▽ More Single crystals of MgB2 with a size up to 1.5x0.9x0.2 mm3 have been grown with a high pressure cubic anvil technique. The crystal growth process is very peculiar and involves an intermediate nitride, namely MgNB9. Single crystals of BN and MgB2 grow simultaneously by a peritectic decomposition of MgNB9. Magnetic measurements in fields of 1-5 Oe show sharp transitions to the superconducting state at 37-38.6 K with width of ~0.5 K. The high quality of the crystals allowed the accurate determination of magnetic, transport and optical properties as well as scanning tunnelling spectroscopy (STS) and decoration studies. Investigations of crystals with torque magnetometry show that Hc2//c is very low (24 kOe at 15 K), while Hc2//ab increases up to 140 kOe at 15 K. The upper critical field anisotropy gamma = Hc2//ab/ Hc2//c was found to be temperature dependent (decreasing from 6 at 15 K to 2.8 at 35 K). The effective anisotropy gamma_eff, as calculated from reversible torque data near Tc, is field dependent (increasing roughly linearly from 2 in zero field to 3.7 in 10 kOe). The temperature and field dependence of the anisotropy can be related to the double gap structure of MgB2 with a large two-dimensional gap and small three-dimensional gap, the latter being rapidly suppressed in a magnetic field. Torque magnetometry investigations show a pronounced peak effect, indicating an order-disorder transition of vortex matter. Decoration experiments and STS visualise a hexagonal vortex lattice. STS spectra evidence two gaps (3 meV/6 meV) with direction dependent weight. Magneto-optic investigations with H//c show a clear signature of the smaller of the two gaps, disappearing in fields higher than Hc2//c. △ Less

Submitted 10 July, 2002; originally announced July 2002.

Comments: 17 pages pdf only, 15 figures integrated (higher resolution photographs available on request); submitted to Supercond. Sci. Technol. (Proceedings of Boromag conference)

Journal ref: Supercond. Sci. Technol. 16, 221 (2003)