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Polarization Switching Ability Dependent on Multidomain Topology in a Uniaxial Organic Ferroelectric
Authors:
F. Kagawa,
S. Horiuchi,
N. Minami,
S. Ishibashi,
K. Kobayashi,
R. Kumai,
Y. Murakami,
Y. Tokura
Abstract:
The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions. Therefore, understanding domain-walls dynamics is of essential importance for advancing ferroelectric applications. In this Letter, we show that the topology of the m…
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The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions. Therefore, understanding domain-walls dynamics is of essential importance for advancing ferroelectric applications. In this Letter, we show that the topology of the multidomain structure can have an intrinsic impact on the degree of switchable polarization. Using a combination of polarization hysteresis measurements and piezoresponse force microscopy on a uniaxial organic ferroelectric, alpha-6,6'-dimethyl-2,2'-bipyridinium chloranilate, we found that the head-to-head (or tail-to-tail) charged domain walls are strongly pinned and thus impede the switching process; in contrast, if the charged domain walls are replaced with electrically neutral antiparallel domain walls, bulk polarization switching is achieved. Our findings suggest that manipulation of the multidomain topology can potentially control the switchable polarization.
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Submitted 9 January, 2014;
originally announced January 2014.
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Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
Authors:
Nicolas Izard,
Saïd Kazaoui,
Kenji Hata,
Toshiya Okazaki,
Takeshi Saito,
Sumio Iijima,
Nobutsugu Minami
Abstract:
Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracent…
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Substantial progress on field effect transistors "FETs" consisting of semiconducting single wall carbon nanotubes "s-SWNTs" without detectable traces of metallic nanotubes and impurities is reported. Nearly perfect removal of metallic nanotubes is confirmed by optical absorption, Raman measurements, and electrical measurements. This outstanding result was made possible in particular by ultracentrifugation (150 000 g) of solutions prepared from SWNT powders using polyfluorene as an extracting agent in toluene. Such s-SWNTs processable solutions were applied to realize FET, embodying randomly or preferentially oriented nanotube networks prepared by spin coating or dielectrophoresis. Devices exhibit stable p-type semiconductor behavior in air with very promising characteristics. The on-off current ratio is 10^5, the on-current level is around 10 $μ$A, and the estimated hole mobility is larger than 2 cm2 / V s.
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Submitted 6 January, 2010;
originally announced January 2010.
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Photoluminescence sidebands of carbon nanotubes below the bright singlet excitonic levels: Coupling between dark excitons and K-point phonons
Authors:
Yoichi Murakami,
Benjamin Lu,
Said Kazaoui,
Nobutsugu Minami,
Tatsuya Okubo,
Shigeo Maruyama
Abstract:
We performed detailed photoluminescence (PL) spectroscopy studies of three different types of single-walled carbon nanotubes (SWNTs) by using samples that contain essentially only one chiral type of SWNT, (6,5), (7,5), or (10,5). The observed PL spectra unambiguously show the existence of an emission sideband at ~ 145 meV below the lowest singlet excitonic (E11) level, whose identity and origin…
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We performed detailed photoluminescence (PL) spectroscopy studies of three different types of single-walled carbon nanotubes (SWNTs) by using samples that contain essentially only one chiral type of SWNT, (6,5), (7,5), or (10,5). The observed PL spectra unambiguously show the existence of an emission sideband at ~ 145 meV below the lowest singlet excitonic (E11) level, whose identity and origin are now under debate. We find that the energy separation between the E11 level and the sideband is almost independent of the SWNT diameter. Based on this, we ascribe the origin of the observed sideband to coupling between K-point LO phonons and dipole-forbidden dark excitons, as recently suggested based on the measurement of (6,5) SWNTs.
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Submitted 28 October, 2008;
originally announced October 2008.
