Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K
Authors:
V. Reboud,
A. Gassenq,
N. Pauc,
J. Aubin,
L. Milord,
Q. M. Thai,
M. Bertrand,
K. Guilloy,
D. Rouchon,
J. Rothman,
T. Zabel,
F. Armand Pilon,
H. Sigg,
A. Chelnokov,
J. M. Hartmann,
V. Calvo
Abstract:
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu…
▽ More
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
△ Less
Submitted 21 April, 2017;
originally announced April 2017.
Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents
Authors:
A. Gassenq,
L. Milord,
J. Aubin,
N. Pauc,
K. Guilloy,
J. Rothman,
D. Rouchon,
A. Chelnokov,
J. M. Hartmann,
V. Reboud,
V. Calvo
Abstract:
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be…
▽ More
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the control of strain becomes an important challenge to improve GeSn devices. Strain micro-measurements are usually performed by Raman spectroscopy. However, different relationships linking the Raman spectral shifts to the built-in strain can be found in the literature. They were deduced from studies on low Sn content GeSn layers (i.e. xSn<8%) or on GeSiSn layers. In this work, we have calibrated the GeSn Raman relationship for really high Sn content GeSn binaries (6<xSn<15%). We have used fully strained GeSn layers and fully relaxed GeSn under-etched microstructures to clearly differentiate the contributions of strain and chemical composition on the Ge-Ge Raman spectral shift. We have shown that the GeSn Raman-strain coefficient for high Sn contents is higher compared to that for pure Ge.
△ Less
Submitted 13 January, 2017;
originally announced January 2017.
