-
Van der Waals Materials for Applications in Nanophotonics
Authors:
Panaiot G. Zotev,
Yue Wang,
Daniel Andres-Penares,
Toby Severs Millard,
Sam Randerson,
Xuerong Hu,
Luca Sortino,
Charalambos Louca,
Mauro Brotons-Gisbert,
Tahiyat Huq,
Stefano Vezzoli,
Riccardo Sapienza,
Thomas F. Krauss,
Brian Gerardot,
Alexander I. Tartakovskii
Abstract:
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called v…
▽ More
Numerous optical phenomena and applications have been enabled by nanophotonic structures. Their current fabrication from high refractive index dielectrics, such as silicon or gallium phosphide, pose restricting fabrication challenges, while metals, relying on plasmons and thus exhibiting high ohmic losses, limit the achievable applications. Here, we present an emerging class of layered so-called van der Waals (vdW) crystals as a viable nanophotonics platform. We extract the dielectric response of 11 mechanically exfoliated thin-film (20-200 nm) van der Waals crystals, revealing high refractive indices up to n = 5, pronounced birefringence up to $Δ$n = 3, sharp absorption resonances, and a range of transparency windows from ultraviolet to near-infrared. We then fabricate nanoantennas on SiO$_2$ and gold utilizing the compatibility of vdW thin films with a variety of substrates. We observe pronounced Mie resonances due to the high refractive index contrast on SiO$_2$ leading to a strong exciton-photon coupling regime as well as largely unexplored high-quality-factor, hybrid Mie-plasmon modes on gold. We demonstrate further vdW-material-specific degrees of freedom in fabrication by realizing nanoantennas from stacked twisted crystalline thin-films, enabling control of nonlinear optical properties, and post-fabrication nanostructure transfer, important for nano-optics with sensitive materials.
△ Less
Submitted 31 October, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
-
Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps
Authors:
Panaiot G. Zotev,
Yue Wang,
Luca Sortino,
Toby Severs Millard,
Nic Mullin,
Donato Conteduca,
Mostafa Shagar,
Armando Genco,
Jamie K. Hobbs,
Thomas F. Krauss,
Alexander I. Tartakovskii
Abstract:
Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structu…
▽ More
Transition metal dichalcogenides have emerged as promising materials for nano-photonic resonators due to their large refractive index, low absorption within a large portion of the visible spectrum and compatibility with a wide range of substrates. Here we use these properties to fabricate WS$_2$ double-pillar nano-antennas in a variety of geometries enabled by the anisotropy in the crystal structure. Using dark field spectroscopy, we reveal multiple Mie resonances, to which we couple WSe$_2$ monolayer photoluminescence and achieve Purcell enhancement and an increased fluorescence by factors up to 240. We introduce post-fabrication atomic force microscope repositioning and rotation of dimer nano-antennas, achieving gaps as small as 10$\pm$5 nm, opening the possibility to a host of potential applications including strong Purcell enhancement of single photon emitters and optical trapping, which we study in simulations. Our findings highlight the advantages of using transition metal dichalcogenides for nano-photonics by exploring new applications enabled by their unique properties.
△ Less
Submitted 2 December, 2021; v1 submitted 19 May, 2021;
originally announced May 2021.
-
Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging
Authors:
T. Severs Millard,
A. Genco,
E. M. Alexeev,
S. Randerson,
S. Ahn,
A. Jang,
H. S. Shin,
A. I. Tartakovskii
Abstract:
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to…
▽ More
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.
△ Less
Submitted 9 November, 2019;
originally announced November 2019.
