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The interface structure of epitaxial graphene grown on 4H-SiC(0001)
Authors:
J. Hass,
J. E. Millan-Otoya,
P. N. First,
E. H. Conrad
Abstract:
We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to…
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We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer (~1.7A compared to 0.63A). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000-1) surface, as predicted previously by ab intio calculations.
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Submitted 10 August, 2008;
originally announced August 2008.
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Rotational stacking and its electronic effects on graphene films grown on 4H-SiC$(000\bar{1})$
Authors:
J. Hass,
F. Varchon,
J. E. Millan-Otoya,
M. Sprinkle,
W. A. de Heer,
C. Berger,
P. N. First,
L. Magaud,
E. H. Conrad
Abstract:
We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they cor…
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We examine the stacking order of multilayer graphene grown on the SiC$(000\bar{1})$ surface using low-energy electron diffraction and surface X-ray diffraction. We show that the films contain a high density of rotational stacking faults caused by three types of rotated graphene: sheets rotated $30^\circ$ and $\pm 2.20^\circ$ relative to the SiC substrate. These angles are unique because they correspond to commensurate phases of layered graphene, both with itself and with the SiC substrate. {\it Ab intio} calculations show that these rotational phases electronically decouple adjacent graphene layers. The band structure from graphene at fault boundaries displays linear energy dispersion at the $K$-point (Dirac cones), nearly identical to that of a single graphene sheet.
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Submitted 14 June, 2007;
originally announced June 2007.
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The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
Authors:
J. Hass,
R. Feng,
J. E. Millan-Otoya,
X. Li,
M. Sprinkle,
P. N. First,
C. Berger,
W. A. de Heer,
E. H. Conrad
Abstract:
We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond betwee…
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We present a structural analysis of the multi-layer graphene-4HSiC(000-1}) system using Surface X-Ray Reflectivity. We show for the first time that graphene films grown on the C-terminated (000-1}) surface have a graphene-substrate bond length that is very short (0.162nm). The measured distance rules out a weak Van der Waals interaction to the substrate and instead indicates a strong bond between the first graphene layer and the bulk as predicted by ab-initio calculations. The measurements also indicate that multi-layer graphene grows in a near turbostratic mode on this surface. This result may explain the lack of a broken graphene symmetry inferred from conduction measurements on this system [C. Berger et al., Science 312, 1191 (2006)].
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Submitted 23 February, 2007;
originally announced February 2007.
