Showing 1–2 of 2 results for author: Mikhailova, G N

Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots

Authors: E. S. Zhukova, B. P. Gorshunov, V. A. Yuryev, L. V. Arapkina, K. V. Chizh, V. A. Chapnin, V. P. Kalinushkin, A. S. Prokhorov, G. N. Mikhailova

Abstract: The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due… ▽ More The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed. △ Less

Submitted 18 February, 2011; v1 submitted 18 January, 2011; originally announced January 2011.

Comments: 9 pages, 4 figures; typos corrected

Journal ref: JETP Letters, 2010, Vol. 92, No. 12, pp. 793-798

Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots

Authors: E. S. Zhukova, B. P. Gorshunov, A. S. Prokhorov, I. E. Spektor, Yu. G. Goncharov, L. V. Arapkina, V. A. Chapnin, V. P. Kalinushkin, G. N. Mikhailova, V. A. Yuryev

Abstract: With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic… ▽ More With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K. △ Less

Submitted 16 March, 2010; originally announced March 2010.

Comments: Proc. 33rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2008), September 15-19, 2008, California Institute of Technology, Pasadena, California, USA.

Journal ref: 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 15-19 Sept. 2008, Pasadena, CA, p. 1-2