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Gate-tunable polarity inversions and three-fold rotation symmetry of the superconducting diode effect
Authors:
William F. Schiela,
Melissa Mikalsen,
Daniel Crawford,
Stefan Ilić,
William M. Strickland,
F. Sebastian Bergeret,
Javad Shabani
Abstract:
The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms.
Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an i…
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The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms.
Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an in-plane magnetic field.
We observe two gate-driven inversions of the diode polarity in the vicinity of zero field, as well as a third-harmonic component in the dependence of the diode efficiency on the in-plane field angle.
We analyze the Lifshitz invariant for an arbitrary spin--orbit coupling and show that multiple polarity inversions are possible in the presence of both linear and cubic Dresselhaus terms, where the Rashba parameter varies monotonically with gate voltage.
Numerical calculations of the diode efficiency further reveal the presence of higher harmonics in its field-angle dependence in the presence of spin--orbit coupling.
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Submitted 30 April, 2025;
originally announced April 2025.
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Geometric dependence of critical current magnitude and nonreciprocity in planar Josephson junctions
Authors:
William F. Schiela,
Melissa Mikalsen,
William M. Strickland,
Javad Shabani
Abstract:
Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied cur…
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Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied current bias. In particular, we vary the longitudinal width (i.e.\ parallel to the current) of the superconducting contacts and the voltage of an electrostatic gate. We observe an increase in both critical current and diode efficiency with increasing contact width and relate the critical current behavior to the induced coherence length of the Andreev bound states that mediate the supercurrent flow through the junction. We further observe a linear trend, with respect to inverse contact width, of the field at which the diode efficiency is maximized, which saturates as the contact width becomes large compared to the coherence length. The smaller field at which the critical current is maximized additionally exhibits a strong gate dependence. We interpret these observations in the context of multiple underlying mechanisms, including spin--orbit coupling and orbital effects.
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Submitted 17 February, 2025;
originally announced February 2025.
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Machine learning analysis of structural data to predict electronic properties in near-surface InAs quantum wells
Authors:
Patrick J. Strohbeen,
Abtin Abbaspour,
Amara Keita,
Tarek Nabih,
Aliona Lejuste,
Alisa Danilenko,
Ido Levy,
Jacob Issokson,
Tyler Cowan,
William M. Strickland,
Mehdi Hatefipour,
Ashley Argueta,
Lukas Baker,
Melissa Mikalsen,
Javad Shabani
Abstract:
Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint no…
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Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint not only describes the residual strain state of a near-surface quantum well, but also could provide an indicator of the quality of electron transport through the material. Here, we present a method utilizing computer vision and machine learning to analyze AFM crosshatch patterns that exhibits this correlation. Our analysis reveals optimized electron transport for moderate values of $λ$ (crosshatch wavelength) and $ε$ (crosshatch height), roughly 1 $μ$m and 4 nm, respectively, that define the average waveform of the pattern. Simulated 2D AFM crosshatch patterns are used to train a machine learning model to correlate the crosshatch patterns to dislocation density. Furthermore, this model is used to evaluate the experimental AFM images and predict a dislocation density based on the crosshatch waveform. Predicted dislocation density, experimental AFM crosshatch data, and experimental transport characterization are used to train a final model to predict 2D electron gas mean free path. This model shows electron scattering is strongly correlated with elastic effects (e.g. dislocation scattering) below 200 nm $λ_{MFP}$.
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Submitted 12 October, 2024; v1 submitted 25 September, 2024;
originally announced September 2024.
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Microwave radiation at criticality in a hybrid Josephson array
Authors:
Kristen W. Léonard,
Anton V. Bubis,
Melissa Mikalsen,
William F. Schiela,
Bassel H. Elfeky,
William M. Strickland,
Duc Phan,
Javad Shabani,
Andrew P. Higginbotham
Abstract:
Anomalous metallic behavior is often observed near superconductor-insulator quantum critical points and, if persistent to zero temperature, poses a challenge to current theories of metals. One explanation for this behavior could be incomplete thermal equilibrium between the sample and the cryostat. However, despite decades of study, the temperature of an anomalous metal has not yet been measured.…
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Anomalous metallic behavior is often observed near superconductor-insulator quantum critical points and, if persistent to zero temperature, poses a challenge to current theories of metals. One explanation for this behavior could be incomplete thermal equilibrium between the sample and the cryostat. However, despite decades of study, the temperature of an anomalous metal has not yet been measured. We introduce a new experimental probe by capturing microwave radiation emitted from the anomalous metal, using a two-dimensional array of superconductor-semiconductor hybrid Josephson junctions as a model system. The total emitted radiation exceeds the limits of thermodynamic equilibrium, and is well described by an elevated sample temperature. The extracted sample temperature matches the onset of anomalous metallic behavior. Additionally, we discover scaling behavior of radiative noise in the presence of an applied bias. Elements of our noise-scaling observations were predicted based on nonlinear critical field theories and gauge-gravity duality between current noise and Hawking radiation from a black hole. This work shows that, in a prominent model system, anomalous metallic behavior is a non-equilibrium effect, and opens a new frontier in the study of universal, non-equilibrium phenomena near quantum criticality.
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Submitted 15 October, 2024; v1 submitted 15 September, 2024;
originally announced September 2024.
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Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction
Authors:
Bassel Heiba Elfeky,
Krishna Dindial,
David S. Brandão,
Barış Pekerten,
Jaewoo Lee,
William M. Strickland,
Patrick J. Strohbeen,
Alisa Danilenko,
Lukas Baker,
Melissa Mikalsen,
William Schiela,
Zixuan Liang,
Jacob Issokson,
Ido Levy,
Igor Zutic,
Javad Shabani
Abstract:
By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isola…
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By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 μ$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms.
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Submitted 15 August, 2024;
originally announced August 2024.
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Molecular beam epitaxy growth of superconducting tantalum germanide
Authors:
Patrick J. Strohbeen,
Tathagata Banerjee,
Aurelia M. Brook,
Ido Levy,
Wendy L. Sarney,
Jechiel van Dijk,
Hayden Orth,
Melissa Mikalsen,
Valla Fatemi,
Javad Shabani
Abstract:
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is…
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Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.
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Submitted 1 December, 2024; v1 submitted 2 December, 2023;
originally announced December 2023.
