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Engineering a Spin-Orbit Bandgap in Graphene-Tellurium Heterostructures
Authors:
B. Muñiz Cano,
D. Pacilè,
M. G. Cuxart,
A. Amiri,
F. Calleja,
M. Pisarra,
A. Sindona,
F. Martín,
E. Salagre,
P. Segovia,
E. G. Michel,
A. L. Vázquez de Parga,
R. Miranda,
J. Camarero,
M. Garnica,
M. A. Valbuena
Abstract:
Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagn…
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Intensive research has focused on harnessing the potential of graphene for electronic, optoelectronic, and spintronic devices by generating a bandgap at the Dirac point and enhancing the spin-orbit interaction in the graphene layer. Proximity to heavy p elements is a promising approach; however, their interaction in graphene heterostructures has not been as intensively studied as that of ferromagnetic, noble, or heavy d metals, neither as interlayers nor as substrates. In this study, the effective intercalation of Te atoms in a graphene on Ir(111) heterostructure is achieved. Combining techniques such as low energy electron diffraction and scanning tunneling microscopy, the structural evolution of the system as a function of the Te coverage is elucidated, uncovering up to two distinct phases. The presented angle-resolved photoemission spectroscopy analysis reveals the emergence of a bandgap of about 240 meV in the Dirac cone at room temperature, which preserves its characteristic linear dispersion. Furthermore, a pronounced n-doping effect induced by Te in the heterostructure is also observed, and remarkably the possibility of tuning the Dirac point energy towards the Fermi level by reducing the Te coverage while maintaining the open bandgap is demonstrated. Spin-resolved measurements unveil a non-planar chiral spin texture with significant splitting values for both in-plane and out-of-plane spin components. These experimental findings are consistent with the development of a quantum spin Hall phase, where a Te-enhanced intrinsic spin orbit coupling in graphene surpasses the Rashba one and promotes the opening of the spin-orbit bandgap.
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Submitted 28 November, 2023;
originally announced November 2023.
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CDW signatures in the electronic structure of LaSb2 at 13 K and metal-insulator transition
Authors:
I. Palacio,
J. Obando-Guevara,
L. Chen,
M. N. Nair,
M. A. González Barrio,
E. Papalazarou,
P. Le Fèvre,
R. F. Luccas,
H. Suderow,
P. Canfield,
A. Taleb-Ibrahimi,
E. G. Michel,
A. Mascaraque,
A. Tejeda
Abstract:
Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functiona…
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Light rare-earth antimonide LaSb2 is a material susceptible to nesting and exhibits a Charge Density Wave (CDW) at 355 K as well as superconductivity below 1.2 K. In the seek for additional CDW transitions, we have studied the temperature-dependent of LaSb2 at 200 and 13 K and infer CDW manifestations by combining angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations. ARPES measurements at 200 K show a metallic system while it appears to be semiconducting at 13 K, at odds with existing resistivity measurements. At 13 K, ARPES shows the band folding of the inner Fermi surface pockets, with considerable spectral weight on the folded band. We find a nesting vector at q = 0.25$\pm$0.02 Å -1. In addition, we observe Umklapps of other bands due to the onset of the new periodicity, together with a semiconducting behavior in the whole reciprocal space. Calculations demonstrate that the folded band is associated with the La-Sb layer and that in-plane distortion is the most probable structural modification in the system, probably affecting the whole unit cell.
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Submitted 9 March, 2022; v1 submitted 7 February, 2022;
originally announced February 2022.
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A multi-technique approach to understanding delithiation damage in LiCoO2 thin films
Authors:
E. Salagre,
S. Quilez,
R. de Benito,
M. Jaafar,
H. P. van der Meulen,
E. Vasco,
R. Cid,
E. J. Fuller,
A. A. Talin,
P. Segovia,
E. G. Michel,
C. Polop
Abstract:
We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force mic…
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We report on the delithiation of LiCoO2 thin films using oxalic acid (C2H2O4) with the goal of understanding the structural degradation of an insertion oxide associated with Li chemical extraction. Using a multi-technique approach that includes synchrotron radiation x-ray diffraction, scanning electron microscopy, micro Raman spectroscopy, photoelectron spectroscopy and conductive atomic force microscopy we reveal the balance between selective Li extraction and structural damage. We identify three different delithiation regimes, related to surface processes, bulk delithiation and damage generation. We find that only a fraction of the grains is affected by the delithiation process, which may create local inhomogeneities. The chemical route to Li extraction provides additional opportunities to investigate delithiation while avoiding the complications associated with electrolyte breakdown and could simplify in situ measurements.
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Submitted 23 February, 2021; v1 submitted 27 October, 2020;
originally announced October 2020.
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Understanding the intrinsic compression in polycrystalline films through a mean-field atomistic model
Authors:
Enrique Vasco,
María J. Ramírez-Peral,
Enrique G. Michel,
Celia Polop
Abstract:
Mullins' theory predicts the buildup of adatoms during surface diffusion at the edges of grooves where grain boundaries emerge to the surface of a polycrystalline film. However, the mesoscopic nature of this theory prevents the identification of the atomic scale physical mechanisms involved in this phenomenon. Here, we interpret the buildup of adatoms in atomistic terms through a mean-field rate-e…
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Mullins' theory predicts the buildup of adatoms during surface diffusion at the edges of grooves where grain boundaries emerge to the surface of a polycrystalline film. However, the mesoscopic nature of this theory prevents the identification of the atomic scale physical mechanisms involved in this phenomenon. Here, we interpret the buildup of adatoms in atomistic terms through a mean-field rate-equation model and demonstrate both its kinetic nature and its impact on the intrinsic stress in these systems. Furthermore, the model provides estimates of the surface profile of intrinsic stress, of its typical mean values, and of the dependence of stress on temperature and deposition flux for different growth stages. These estimates agree well with reported experimental results obtained from recent advances in nanoscale mapping of mechanical stresses on the surface of polycrystalline films.
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Submitted 14 October, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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In-plane Néel wall chirality and orientation of interfacial Dzyaloshinskii-Moriya vector in magnetic films
Authors:
MacCallum Robertson,
Christopher J. Agostino,
Gong Chen,
Sang Pyo Kang,
Arantzazu Mascaraque,
Enrique Garcia Michel,
Changyeon Won,
Yizheng Wu,
Andreas K. Schmid,
Kai Liu
Abstract:
The interfacial Dzyaloshinskii-Moriya interaction (DMI) is of great interest as it can stabilize chiral spin structures in thin films. Experiments verifying the orientation of the interfacial DMI vector remain rare, in part due to the difficulty of separating vector components of DMI. In this study, Fe/Ni bilayers and Co/Ni multilayers were deposited epitaxially onto Cu(001) and Pt(111) substrates…
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The interfacial Dzyaloshinskii-Moriya interaction (DMI) is of great interest as it can stabilize chiral spin structures in thin films. Experiments verifying the orientation of the interfacial DMI vector remain rare, in part due to the difficulty of separating vector components of DMI. In this study, Fe/Ni bilayers and Co/Ni multilayers were deposited epitaxially onto Cu(001) and Pt(111) substrates, respectively. By tailoring the effective anisotropy, spin reorientation transitions (SRTs) are employed to probe the orientation of the DMI vector by measuring the spin structure of domain walls on both sides of the SRTs. The interfacial DMI is found to be sufficiently strong to stabilize chiral Néel walls in the out-of-plane magnetized regimes, while achiral Néel walls are observed in the in-plane magnetized regimes. These findings experimentally confirm that the out-of-plane component of the DMI vector is insignificant in these fcc(001) and fcc(111) oriented interfaces, even in the presence of atomic steps.
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Submitted 14 July, 2020; v1 submitted 25 June, 2020;
originally announced June 2020.
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Tunable Graphene Electronics with Local Ultrahigh Pressure
Authors:
Pablo Ares,
Michele Pisarra,
Pilar Segovia,
Cristina Diaz,
Fernando Martin,
Enrique G. Michel,
Felix Zamora,
Cristina Gomez-Navarro,
Julio Gomez-Herrero
Abstract:
We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work represents the first demonstration of local creation of very stable effective p-doped graphene regions with nanometer precision, as unambiguously verified by a…
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We achieve fine tuning of graphene effective doping by applying ultrahigh pressures (> 10 GPa) using Atomic Force Microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO2 substrate. Our work represents the first demonstration of local creation of very stable effective p-doped graphene regions with nanometer precision, as unambiguously verified by a battery of techniques. Importantly, the doping strength depends monotonically on the applied pressure, allowing a controlled tuning of graphene electronics. Through this doping effect, ultrahigh pressure modifications include the possibility of selectively modifying graphene areas to improve their electrical contact with metal electrodes, as shown by Conductive AFM. Density Functional Theory calculations and experimental data suggest that this pressure level induces the onset of covalent bonding between graphene and the underlying SiO2 substrate. Our work opens a convenient avenue to tuning the electronics of 2D materials and van der Waals heterostructures through pressure with nanometer resolution.
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Submitted 24 September, 2019;
originally announced September 2019.
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Effect of a skin-deep surface zone on formation of two-dimensional electron gas at a semiconductor surface
Authors:
Natalia Olszowska,
Jakub Lis,
Piotr Ciochon,
Lukasz Walczak,
Enrique G. Michel,
Jacek J. Kolodziej
Abstract:
Two dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a 1D self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. E…
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Two dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a 1D self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while keeping a high-quality interface, free of defects and with a constant doping density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG bands energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wavefunctions.
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Submitted 2 June, 2016;
originally announced June 2016.
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Observation of a Mott insulating ground state for Sn/Ge(111) at low temperature
Authors:
R. Cortes,
A. Tejeda,
J. Lobo,
C. Didiot,
B. Kierren,
D. Malterre,
E. G. Michel,
A. Mascaraque
Abstract:
We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experimen…
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We report an investigation on the properties of 0.33 ML of Sn on Ge(111) at temperatures down to 5 K. Low-energy electron diffraction and scanning tunneling microscopy show that the (3x3) phase formed at 200 K, reverts to a new (root-3xroot-3)R30 phase below 30 K. The vertical distortion characteristic of the (3x3) phase is lost across the phase transition. Angle-resolved photoemission experiments show that concomitantly with the structural phase transition, a metal-insulator phase transition takes place. In agreement with theoretical predictions, the (root-3xroot-3)R30 ground state is interpreted as the experimental realization of a Mott insulator for a narrow half-filled band in a two-dimensional triangular lattice.
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Submitted 2 January, 2006;
originally announced January 2006.
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Order-disorder transition driven by dynamical effects between the Sn/Ge(111)-($3\times3$) and $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ phases
Authors:
J. Avila,
A. Mascaraque,
G. Le Lay,
E. G. Michel,
M. Gothelid,
H. Ascolani,
J. Alvarez,
S. Ferrer,
M. C. Asensio
Abstract:
This paper was withdrawn by the authors.
This paper was withdrawn by the authors.
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Submitted 4 December, 2003; v1 submitted 13 April, 2001;
originally announced April 2001.
