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Quantum Analogies in Ionic Transport Through Nanopores
Authors:
Andrew Meyertholen,
Massimiliano Di Ventra
Abstract:
Ionic transport in nanopores or nanochannels is key to many cellular processes and is now being explored as a method for DNA/polymer sequencing and detection. Although apparently simple in its scope, the study of ionic dynamics in confined geometries has revealed interesting new phenomena that have an almost one-to-one correspondence with the quantum regime. The picture that emerges is that ions c…
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Ionic transport in nanopores or nanochannels is key to many cellular processes and is now being explored as a method for DNA/polymer sequencing and detection. Although apparently simple in its scope, the study of ionic dynamics in confined geometries has revealed interesting new phenomena that have an almost one-to-one correspondence with the quantum regime. The picture that emerges is that ions can form two `quasi-particle' states, one in which they surround themselves with other ions of opposite charge - ionic atmosphere - and one in which semi-bound water molecules form layers at different distances from the ions - hydration layers. The second state gives rise to two additional effects. In the first, which is a single quasi-particle effect, the ionic conductance through a nanopore is predicted to be `quantized' as a function of pore radius, with the corresponding `quantization units' not related to universal constants - like the Plank constant and the elementary charge - but rather to the radii of the hydration layers. The second effect instead involves the many-body interaction among ionic quasi-particles of the same sign, and occurs when the pore has a finite capacitance to accommodate ions so that there is a threshold concentration beyond which ions of the same sign are not energetically allowed to enter the pore. Similar to the electron transport case, the ionic counterpart appears only in the `quantum' regime, when the hydration layers forming the ionic quasi-particles need to break in order to pass through the pore. Here, we review all these phenomena, and discuss the conditions under which they may be detected making the analogy with the electronic transport case. Since nanopores are being considered for a host of technological applications in DNA sequencing and detection, we expect these phenomena will become very relevant and their understanding paramount to progress.
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Submitted 31 May, 2013;
originally announced May 2013.
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Collection of indirect excitons in a diamond-shaped electrostatic trap
Authors:
A. A. High,
A. K. Thomas,
G. Grosso,
M. Remeika,
A. T. Hammack,
A. D. Meyertholen,
M. M. Fogler,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening o…
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We report on the principle and realization of a new trap for excitons -- the diamond electrostatic trap -- which uses a single electrode to create a confining potential for excitons. We also create elevated diamond traps which permit evaporative cooling of the exciton gas. We observe collection of excitons towards the trap center with increasing exciton density. This effect is due to screening of disorder in the trap by the excitons. As a result, the diamond trap behaves as a smooth parabolic potential which realizes a cold and dense exciton gas at the trap center.
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Submitted 3 June, 2009;
originally announced June 2009.
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Localization-Delocalization Transition of Indirect Excitons in Lateral Electrostatic Lattices
Authors:
M. Remeika,
J. C. Graves,
A. T. Hammack,
A. D. Meyertholen,
M. M. Fogler,
L. V. Butov,
M. Hanson,
A. C. Gossard
Abstract:
We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results a…
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We study transport of indirect excitons in GaAs/AlGaAs coupled quantum wells in linear lattices created by laterally modulated gate voltage. The localization-delocalization transition (LDT) for transport across the lattice was observed with reducing lattice amplitude or increasing exciton density. The exciton interaction energy at the transition is close to the lattice amplitude. These results are consistent with the model, which attributes the LDT to the interaction-induced percolation of the exciton gas through the external potential. We also discuss applications of the lattice potentials for estimating the strength of disorder and exciton interaction.
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Submitted 9 January, 2009;
originally announced January 2009.
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Biexcitons in two-dimensional systems with spatially separated electrons and holes
Authors:
A. D. Meyertholen,
M. M. Fogler
Abstract:
The binding energy and wavefunctions of two-dimensional indirect biexcitons are studied analytically and numerically. It is proven that stable biexcitons exist only when the distance between electron and hole layers is smaller than a certain critical threshold. Numerical results for the biexciton binding energies are obtained using the stochastic variational method and compared with the analytic…
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The binding energy and wavefunctions of two-dimensional indirect biexcitons are studied analytically and numerically. It is proven that stable biexcitons exist only when the distance between electron and hole layers is smaller than a certain critical threshold. Numerical results for the biexciton binding energies are obtained using the stochastic variational method and compared with the analytical asymptotics. The threshold interlayer separation and its uncertainty are estimated. The results are compared with those obtained by other techniques, in particular, the diffusion Monte-Carlo method and the Born-Oppenheimer approximation.
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Submitted 14 August, 2008;
originally announced August 2008.
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Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile
Authors:
A. D. Meyertholen,
Z. Q. Li,
D. N. Basov,
M. M. Fogler,
M. C. Martin,
G. M. Wang,
A. S. Dhoot,
D. Moses,
A. J. Heeger
Abstract:
We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resista…
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We show that infrared imaging of the charge density profile in organic field-effect transistors (FETs) can probe transport characteristics which are difficult to access by conventional contact-based measurements. Specifically, we carry out experiments and modeling of infrared spectromicroscopy of poly(3-hexylthiophene) (P3HT) FETs in which charge injection is affected by a relatively low resistance of the gate insulators. We conclude that the mobility of P3HT has a power-law density dependence, which is consistent with the activated transport in disorder-induced tails of the density of states.
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Submitted 19 March, 2007;
originally announced March 2007.
