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Reconstructing the wavefunction of magnetic topological insulators MnBi2Te4 and MnBi4Te7 using spin-resolved photoemission
Authors:
Xue Han,
Jason Qu,
Hengxin Tan,
Zicheng Tao,
Noah M. Meyer,
Patrick S. Kirchmann,
Yanfeng Guo,
Binghai Yan,
Zhi-Xun Shen,
Jonathan A. Sobota
Abstract:
Despite their importance for exotic quantum effects, the surface electronic structure of magnetic topological insulators MnBi2Te4 and MnBi4Te7 remains poorly understood. Using high-efficiency spin- and angle-resolved photoemission spectroscopy, we directly image the spin-polarization and orbital character of the surface states in both compounds and map our observations onto a model wavefunction to…
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Despite their importance for exotic quantum effects, the surface electronic structure of magnetic topological insulators MnBi2Te4 and MnBi4Te7 remains poorly understood. Using high-efficiency spin- and angle-resolved photoemission spectroscopy, we directly image the spin-polarization and orbital character of the surface states in both compounds and map our observations onto a model wavefunction to describe the complex spin-orbital texture, which solidifies our understanding of the surface band structure by establishing the single-band nature of the most prominent states. Most importantly, our analysis reveals a new mechanism for reducing the magnetic gap of the topological surface states based on the orbital composition of the wavefunction.
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Submitted 3 June, 2025;
originally announced June 2025.
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Modeling of High-Sensitivity SAW Magnetic Field Sensors with Au-SiO2 Phononic Crystals
Authors:
Mohsen Samadi,
Jana Marie Meyer,
Elizaveta Spetzler,
Benjamin Spetzler,
Jeffrey McCord,
Fabian Lofink,
Martina Gerken
Abstract:
The development of magnetic field sensors with high sensitivity is crucial for accurate detection of magnetic fields. In this context, we present a theoretical model of a highly sensitive surface acoustic wave (SAW) magnetic field sensor that utilizes phononic crystal (PnC) structures composed of Au pillars embedded within a SiO2 guiding layer. We study rectangular and triangular PnCs and assess t…
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The development of magnetic field sensors with high sensitivity is crucial for accurate detection of magnetic fields. In this context, we present a theoretical model of a highly sensitive surface acoustic wave (SAW) magnetic field sensor that utilizes phononic crystal (PnC) structures composed of Au pillars embedded within a SiO2 guiding layer. We study rectangular and triangular PnCs and assess their potential for application in thin-film magnetic field sensors. In our design, the PnC is integrated into the SiO2 guiding layer, preserving the continuous magnetostrictive layer and maximizing its interaction with the SAW. The sensor achieves nearly two orders of magnitude higher sensitivity compared to a continuous delay line of similar dimensions and an eight-fold improvement over the previous sensor design with PnCs composed of FeCoSiB pillars. The enhanced sensitivity is attributed to resonance effects within the PnC leading to an increased interaction between the SAW and the continuous FeCoSiB layer covering the PnC. Our results highlight the significant potential of incorporating PnCs into the guiding layer of SAWs for future high performance magnetic field sensors.
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Submitted 10 February, 2025;
originally announced February 2025.
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Operating semiconductor qubits without individual barrier gates
Authors:
A. S. Ivlev,
D. R. Crielaard,
M. Meyer,
W. I. L. Lawrie,
N. W. Hendrickx,
A. Sammak,
Y. Matsumoto,
L. M. K. Vandersypen,
G. Scappucci,
C. Déprez,
M. Veldhorst
Abstract:
Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the fabrication of small features and complex fanouts. A particular challenge has been formed by the need for individual barrier gates to control the exchange interacti…
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Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the fabrication of small features and complex fanouts. A particular challenge has been formed by the need for individual barrier gates to control the exchange interaction between adjacent spin qubits. Here, we propose a method to vary two-qubit interactions without applying pulses on individual barrier gates while also remaining insensitive to detuning noise in first order. Experimentally we find that changing plunger gate voltages over 300 mV can tune the exchange energy $J$ from 100 kHz to 60 MHz. This allows us to perform two-qubit operations without changing the barrier gate voltage. Based on these findings we conceptualize a spin qubit architecture without individual barrier gates, simplifying the fabrication while maintaining the control necessary for universal quantum computation.
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Submitted 9 July, 2025; v1 submitted 6 January, 2025;
originally announced January 2025.
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Baseband control of single-electron silicon spin qubits in two dimensions
Authors:
Florian K. Unseld,
Brennan Undseth,
Eline Raymenants,
Yuta Matsumoto,
Saurabh Karwal,
Oriol Pietx-Casas,
Alexander S. Ivlev,
Marcel Meyer,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci,
Lieven M. K. Vandersypen
Abstract:
Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method of high-fidelity single-spin control in silicon. However, the resulting architectural limitations have restrained silicon quantum processors to one-dimensional arrays, and heating effects from the associated microwave dissipation exacerbates crosstalk during multi-qubit operations. In contrast, qubit control based o…
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Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method of high-fidelity single-spin control in silicon. However, the resulting architectural limitations have restrained silicon quantum processors to one-dimensional arrays, and heating effects from the associated microwave dissipation exacerbates crosstalk during multi-qubit operations. In contrast, qubit control based on hopping spins has recently emerged as a compelling primitive for high-fidelity baseband control in sparse two-dimensional hole arrays in germanium. In this work, we commission a $^{28}$Si/SiGe 2x2 quantum dot array both as a four-qubit device with pairwise exchange interactions using established EDSR techniques and as a two-qubit device using baseband hopping control. In this manner, we can evaluate the two modes of operation in terms of fidelity, coherence, and crosstalk. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate of 99.54(4)%. Lowering the external field to reach the hopping regime nearly doubles the measured $T_2^{\mathrm{H}}$, suggesting a reduced coupling to charge noise. Finally, the hopping gate circumvents the transient pulse-induced resonance shift. To further motivate the hopping gate approach as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.
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Submitted 6 December, 2024;
originally announced December 2024.
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Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
Authors:
S. Benlenqwanssa,
S. S. Krishtopenko,
M. Meyer,
B. Benhamou-Bui,
L. Bonnet,
A. Wolf,
C. Bray,
C. Consejo,
S. Ruffenach,
S. Nanot,
J. -B. Rodriguez,
E. Tournié,
F. Hartmann,
S. Höfling,
F. Teppe,
B. Jouault
Abstract:
We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topolog…
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We present a multi-probe transport analysis that effectively separates bulk and edge currents in large Hall bar devices with standard geometries. Applied to transport measurements on all possible four-probe configurations of six-probe Hall bar devices made of inverted three-layer InAs/GaInSb quantum wells (QWs), our analysis not only reveals the presence of dissipative edge currents in the topological gap, but also allows the temperature dependence of bulk and edge conductivity to be evaluated separately. The temperature dependence of the edge conductivity for Hall bar channels from 10 $μ$m to 70~$μ$m in the range of 1.5 K to 45 K is consistent with the theoretical expectation of weakly interacting helical edge electrons with backscattering due to localized magnetic moments of charge impurities. We argue that these charge impurities are naturally associated with intrinsic Ga-antisite defects, which act as double acceptors in InAs/Ga(In)Sb-based QWs.
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Submitted 29 October, 2024;
originally announced October 2024.
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SPRING: an effective and reliable framework for image reconstruction in single-particle Coherent Diffraction Imaging
Authors:
Alessandro Colombo,
Mario Sauppe,
Andre Al Haddad,
Kartik Ayyer,
Morsal Babayan,
Rebecca Boll,
Ritika Dagar,
Simon Dold,
Thomas Fennel,
Linos Hecht,
Gregor Knopp,
Katharina Kolatzki,
Bruno Langbehn,
Filipe R. N. C. Maia,
Abhishek Mall,
Parichita Mazumder,
Tommaso Mazza,
Yevheniy Ovcharenko,
Ihsan Caner Polat,
Dirk Raiser,
Julian C. Schäfer-Zimmermann,
Kirsten Schnorr,
Marie Louise Schubert,
Arezu Sehati,
Jonas A. Sellberg
, et al. (18 additional authors not shown)
Abstract:
Coherent Diffraction Imaging (CDI) is an experimental technique to gain images of isolated structures by recording the light scattered off the sample. In principle, the sample density can be recovered from the scattered light field through a straightforward Fourier Transform operation. However, only the amplitude of the field is recorded, while the phase is lost during the measurement process and…
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Coherent Diffraction Imaging (CDI) is an experimental technique to gain images of isolated structures by recording the light scattered off the sample. In principle, the sample density can be recovered from the scattered light field through a straightforward Fourier Transform operation. However, only the amplitude of the field is recorded, while the phase is lost during the measurement process and has to be retrieved by means of suitable, well-established phase retrieval algorithms. In this work, we present SPRING, an analysis framework tailored to X-ray Free Electron Laser (XFEL) single-shot single-particle diffraction data that implements the Memetic Phase Retrieval method to mitigate the shortcomings of conventional algorithms. We benchmark the approach on experimental data acquired in two experimental campaigns at SwissFEL and European XFEL. Imaging results on isolated nanostructures reveal unprecedented stability and resilience of the algorithm's behavior on the input parameters, as well as the capability of identifying the solution in conditions hardly treatable so far with conventional methods. A user-friendly implementation of SPRING is released as open-source software, aiming at being a reference tool for the coherent diffraction imaging community at XFEL and synchrotron facilities.
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Submitted 5 March, 2025; v1 submitted 11 September, 2024;
originally announced September 2024.
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Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
Authors:
Manuel Meyer,
Tobias Fähndrich,
Sebastian Schmid,
Adriana Wolf,
Sergey Krishtopenko,
Benoit Jouault,
Gerald Bastard,
Frederic Teppe,
Fabian Hartmann,
Sven Höfling
Abstract:
We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The emergence of topological and normal insulating phases is assessed based on the evolution of the charge carrier densities, the resistivity dependence of the gap via in-plane magnetic fields and the thermal activa…
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We report on the coexistence of both normal and topological insulating phases in InAs/GaSb bilayer quantum well induced by the built-in electric field tuned optically and electrically. The emergence of topological and normal insulating phases is assessed based on the evolution of the charge carrier densities, the resistivity dependence of the gap via in-plane magnetic fields and the thermal activation of carriers. For the Hall bar device tuned optically, we observe the fingerprints associated with the presence of only the topological insulating phase. For another Hall bar processed identically but with an additional top gate, the coexistence of normal and topological insulating phases is found by electrical tuning. Our finding paves the way for utilizing a new electro-optical tuning scheme to manipulate InAs/GaSb bilayer quantum wells to obtain trivial-topological insulating interfaces in the bulk rather than at the physical edge of the device.
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Submitted 22 January, 2024;
originally announced January 2024.
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Single-electron occupation in quantum dot arrays at selectable plunger gate voltage
Authors:
Marcel Meyer,
Corentin Déprez,
Ilja N. Meijer,
Florian K. Unseld,
Saurabh Karwal,
Amir Sammak,
Giordano Scappucci,
Lieven M. K. Vandersypen,
Menno Veldhorst
Abstract:
The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the…
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The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware.
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Submitted 7 September, 2023;
originally announced September 2023.
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Low disorder and high valley splitting in silicon
Authors:
Davide Degli Esposti,
Lucas E. A. Stehouwer,
Önder Gül,
Nodar Samkharadze,
Corentin Déprez,
Marcel Meyer,
Ilja N. Meijer,
Larysa Tryputen,
Saurabh Karwal,
Marc Botifoll,
Jordi Arbiol,
Sergey V. Amitonov,
Lieven M. K. Vandersypen,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci
Abstract:
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio…
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The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.
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Submitted 2 February, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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A 2D quantum dot array in planar $^{28}$Si/SiGe
Authors:
Florian K. Unseld,
Marcel Meyer,
Mateusz T. Mądzik,
Francesco Borsoi,
Sander L. de Snoo,
Sergey V. Amitonov,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst,
Lieven M. K. Vandersypen
Abstract:
Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking…
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Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions.
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Submitted 6 June, 2023; v1 submitted 31 May, 2023;
originally announced May 2023.
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Generation of Large Vortex-Free Superfluid Helium Nanodroplets
Authors:
Anatoli Ulmer,
Andrea Heilrath,
Björn Senfftleben,
Sean M. O. O'Connell-Lopez,
Björn Kruse,
Lennart Seiffert,
Katharina Kolatzki,
Bruno Langbehn,
Andreas Hoffmann,
Thomas M. Baumann,
Rebecca Boll,
Adam S. Chatterley,
Alberto De Fanis,
Benjamin Erk,
Swetha Erukala,
Alexandra J. Feinberg,
Thomas Fennel,
Patrik Grychtol,
Robert Hartmann,
Markus Ilchen,
Manuel Izquierdo,
Bennet Krebs,
Markus Kuster,
Tommaso Mazza,
Jacobo Montaño
, et al. (16 additional authors not shown)
Abstract:
Superfluid helium nanodroplets are an ideal environment for the formation of metastable, self-organized dopant nanostructures. However, the presence of vortices often hinders their formation. Here, we demonstrate the generation of vortex-free helium nanodroplets and explore the size range in which they can be produced. From x-ray diffraction images of xenon-doped droplets, we identify that single…
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Superfluid helium nanodroplets are an ideal environment for the formation of metastable, self-organized dopant nanostructures. However, the presence of vortices often hinders their formation. Here, we demonstrate the generation of vortex-free helium nanodroplets and explore the size range in which they can be produced. From x-ray diffraction images of xenon-doped droplets, we identify that single compact structures, assigned to vortex-free aggregation, prevail up to $10^8$ atoms per droplet. This finding builds the basis for exploring the assembly of far-from-equilibrium nanostructures at low temperatures.
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Submitted 20 June, 2023; v1 submitted 14 February, 2023;
originally announced February 2023.
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Electrical control of uniformity in quantum dot devices
Authors:
Marcel Meyer,
Corentin Déprez,
Timo R. van Abswoude,
Dingshan Liu,
Chien-An Wang,
Saurabh Karwal,
Stefan Oosterhout,
Franscesco Borsoi,
Amir Sammak,
Nico W. Hendrickx,
Giordano Scappucci,
Menno Veldhorst
Abstract:
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the int…
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Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots reducing the spread in pinch-off voltage by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.
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Submitted 24 November, 2022;
originally announced November 2022.
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Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Authors:
Alessandro R. Mazza,
Jason Lapano,
Harry M. Meyer III,
Christopher T. Nelson,
Tyler Smith,
Yun-Yi Pai,
Kyle Noordhoek,
Benjamin J. Lawrie,
Timothy R. Charlton,
Robert G. Moore,
T. Zac Ward,
Mao-Hua Du,
Gyula Eres,
Matthew Brahlek
Abstract:
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox…
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Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.
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Submitted 22 May, 2022;
originally announced May 2022.
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Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
Authors:
M. Meyer,
S. Schmid,
F. Jabeen,
G. Bastard,
F. Hartmann,
S. Höfling
Abstract:
We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the…
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We study the evolution of the quantum scattering time by gate voltage training in the topological insulator based on InAs/GaSb/InAs trilayer quantum wells. Depending on the minimal gate voltage applied during a gate voltage sweep cycle, the quantum scattering time can be improved by 50 % from 0.08 ps to 0.12 ps albeit the transport scattering time is rather constant around 1.0 ps. The ratio of the quantum scattering time versus transport scattering time scales linearly with the charge carrier density and varies from 10 to 30, indicating Coulombic scattering as the dominant scattering mechanism. Our findings may enable to improve the residual bulk conductivity issue and help in observing helical edge channels in topological insulators based on InAs/GaSb quantum well heterostructures even for macroscopic devices.
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Submitted 10 May, 2022;
originally announced May 2022.
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Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene
Authors:
Vincent Strenzke,
Jana M. Meyer,
Isabell Grandt-Ionita,
Marta Prada,
Hyun-Seok Kim,
Martin Heilmann,
Joao Marcelo J. Lopes,
Lars Tiemann,
Robert H. Blick
Abstract:
The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to s…
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The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.
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Submitted 11 February, 2022;
originally announced February 2022.
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Controlling Hot Electron Spatial and Momentum Distributions in Nanoplasmonic Systems: Volume versus Surface Effects
Authors:
Jacob Pettine,
Sean M. Meyer,
Fabio Medeghini,
Catherine J. Murphy,
David J. Nesbitt
Abstract:
Hot carrier spatial and momentum distributions in nanoplasmonic systems depend sensitively on the optical excitation parameters and nanoscale geometry, which therefore determine the efficiency and functionality of plasmon-enhanced catalysts, photovoltaics, and nanocathodes. A growing appreciation over the past decade for the distinction between volume- and surface-mediated photoexcitation and elec…
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Hot carrier spatial and momentum distributions in nanoplasmonic systems depend sensitively on the optical excitation parameters and nanoscale geometry, which therefore determine the efficiency and functionality of plasmon-enhanced catalysts, photovoltaics, and nanocathodes. A growing appreciation over the past decade for the distinction between volume- and surface-mediated photoexcitation and electron emission from such systems has underscored the need for direct mechanistic insight and quantification of these two processes. Toward this end, we use angle-resolved photoelectron velocity mapping to directly distinguish volume and surface contributions to nanoplasmonic hot electron emission from gold nanorods as a function of aspect ratio, down to the spherical limit. Nanorods excited along their longitudinal surface plasmon axis exhibit surprising transverse photoemission distributions due to the dominant volume excitation mechanisms, as reproduced via ballistic Monte Carlo modelling. We further demonstrate a screening-induced transition from volume (transverse) to surface (longitudinal) photoemission with red detuning of the excitation laser and determine the relative cross-sections of the two mechanisms via combined volume and surface multiphoton photoemission modelling. Based on these results, we are able to identify geometry- and material-specific contributions to the photoemission cross-sections and offer general principles for designing nanoplasmonic systems to control hot electron excitation and emission distributions.
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Submitted 14 July, 2020;
originally announced July 2020.
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A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells
Authors:
J. Scharnetzky,
J. M. Meyer,
M. Berl,
C. Reichl,
L. Tiemann,
W. Dietsche,
W. Wegscheider
Abstract:
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts…
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The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the traditional design like the poor 2DEG mobility and leakage currents between the gate and the quantum well. Both bilayers with and without separate contacts have been prepared and tested. Tuning the electron density in one layer while keeping the second 2DEG at fixed density, one observes a dramatic increase of the carrier concentration. This tunneling resonance, which occurs at equal densities of both layers, demonstrates the separated contacts to each individual layer. In another sample with a smaller tunneling barrier and parallel contacted 2DEGs, the transition from a single 2DEG to a bilayer system is investigated at 50 mK in magnetic fields up to 12 T, showing the gate stability in high magnetic fields and very low temperatures. Transitions into an insulating (Wigner crystal) phase are observed in the individual layers in high fields at filling factors below 1/3. The absence of a fractional quantum Hall liquid at filling factor 1/5 in our structure seems to be a consequence of confining the electrons in quantum wells rather than at interfaces. The observed metal-insulator transitions appear to be nearly unaffected by the presence of the second layer separated by a barrier which is only 3 nm thick. We believe that this planar back-gate design holds great promise to produce controllable bilayers suitable to investigate the exotic (non-abelian) properties of correlated states.
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Submitted 13 February, 2020;
originally announced February 2020.
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Discrete Interactions between a few Interlayer Excitons Trapped at a MoSe$_2$-WSe$_2$ Heterointerface
Authors:
Malte Kremser,
Mauro Brotons-Gisbert,
Johannes Knörzer,
Janine Gückelhorn,
Moritz Meyer,
Matteo Barbone,
Andreas V. Stier,
Brian D. Gerardot,
Kai Müller,
Jonathan J. Finley
Abstract:
Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation eff…
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Interlayer excitons (IXs) in hetero-bilayers of transition metal dichalcogenides (TMDs) represent an exciting emergent class of long-lived dipolar composite bosons in an atomically thin, near-ideal two-dimensional (2D) system. The long-range interactions that arise from the spatial separation of electrons and holes can give rise to novel quantum, as well as classical multi-particle correlation effects. In order to acquire a detailed understanding of the possible many-body effects, the fundamental interactions between individual IXs have to be studied. Here, we trap a tunable number of dipolar within a nanoscale confinement potential induced by placing a MoSe$_2$-WSe$_2$ hetero-bilayer (HBL) onto an array of SiO$_2$ nanopillars. We control the mean occupation of the IX trap via the optical excitation level and observe discrete sharp-line emission from different configurations of interacting IXs. We identify these features as different multiparticle states with $N_{IX}\sim1-5$ via their power dependencies and directly measure the hierarchy of dipolar and exchange interactions as $N_{IX}$ increases. The interlayer biexciton ($N_{IX}=2$) is found to be an emission doublet that is blue-shifted from the single exciton by $ΔE=(8.4\pm0.6)$ meV and split by $2J=(1.2\pm0.5)$ meV. The blueshift is even more pronounced for triexcitons ($(12.4\pm0.4)$ meV), quadexcitons ($(15.5\pm0.6)$ meV) and quintexcitons ($(18.2\pm0.8)$ meV). These values are shown to be mutually consistent with numerical modelling of dipolar excitons confined to a harmonic trapping potential having a confinement lengthscale in the range $\ell\approx 3$ nm. Our results contribute to the understanding of interactions between IXs in TMD HBLs at the discrete limit of only a few excitations and represent a key step towards exploring quantum correlations between them.
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Submitted 24 June, 2020; v1 submitted 20 July, 2019;
originally announced July 2019.
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In Quest of a Ferromagnetic Insulator -- Structure Controlled Magnetism in Mg-Ti-O Thin Films
Authors:
Johannes Frantti,
Yukari Fujioka,
Christopher Rouleau,
Alexandra Steffen,
Alexander Puretzky,
Nickolay Lavrik,
Ilia N. Ivanov,
Harry M. Meyer
Abstract:
Ferromagnetic insulator thin films can convey information by spin waves, avoiding charge displacement and Eddy current losses. The sparsity of high-temperature insulating ferromagnetic materials hinders the development of spin wave based devices. Stoichiometric magnesium titanate, MgTiO$_3$, has an electronic-energy-band structure in which all bands are either full or empty, being a paramagnetic i…
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Ferromagnetic insulator thin films can convey information by spin waves, avoiding charge displacement and Eddy current losses. The sparsity of high-temperature insulating ferromagnetic materials hinders the development of spin wave based devices. Stoichiometric magnesium titanate, MgTiO$_3$, has an electronic-energy-band structure in which all bands are either full or empty, being a paramagnetic insulator. The MgTiO$_3$ ilmenite consists of ordered octahedra and cation network in which one third of the octahedra are vacant, one third host magnesium and one third titanium. By giving up these characteristics, a rich variety of different magnetic structures can be formed. Our experiments and electronic-energy-band-structure computations show that the magnetic and electric properties of Mg-Ti-O films can drastically be changed and controlled by Mg- and Ti-cation arrangement and abundancy in the octahedra. Insulating titanium- and semiconducting magnesium-rich films were ferromagnetic up to elevated temperatures. The presence and origin of ferromagnetic insulating phase in the films is not apparent - the expectation, based on the well-established rules set by Goodenough and Kanamori, is paramagnetic or antiferromagnetic ordering. We show that ferro- and paramagnetic phases, possessing the same stoichiometry, can be obtained by merely rearranging the cations, thus allowing defect-free interfaces in multilayer structures.
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Submitted 26 June, 2019;
originally announced June 2019.
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Room-temperature insulating ferromagnetic (Ni,Co)1+2xTi1-xO3 thin films
Authors:
Yukari Fujioka,
Johannes Frantti,
Christopher Rouleau,
Alexander Puretzky,
Zheng Gai,
Nickolay Lavrik,
Andreas Herklotz,
Ilia N. Ivanov,
Harry M. Meyer
Abstract:
Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial $A^{1+2x}$Ti$^{4+}$$_{1-x}$O$_3$ (ATO), $A=$Ni$^{2+}$,Co$^{2+}$ and $0.6<x \leq 1$, thin films are electrically insulating ferromagnets already at room-temperat…
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Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial $A^{1+2x}$Ti$^{4+}$$_{1-x}$O$_3$ (ATO), $A=$Ni$^{2+}$,Co$^{2+}$ and $0.6<x \leq 1$, thin films are electrically insulating ferromagnets already at room-temperature. The octahedra network of the ATO and ilmenite structures are similar yet different octahedra-filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to $x=1$, or vacated $(-0.24<x<0)$ in the ATO structure. TiO-layers, which separate the ferromagnetic (Ni,Co)O-layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO$_3$ and CoTiO$_3$ ilmenites, can continuously be replaced by (Ni,Co)O-layers to convert the ATO-films to ferromagnetic insulator with abundant direct cation interactions.
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Submitted 7 July, 2019; v1 submitted 26 June, 2019;
originally announced June 2019.
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A compact ultrahigh vacuum scanning tunneling microscope with dilution refrigeration
Authors:
Timofey Balashov,
Michael Meyer,
Wulf Wulfhekel
Abstract:
We have designed and built a scanning tunneling microscope (STM) setup for operation at millikelvin temperatures in ultra high vacuum. A compact cryostat with an integrated dilution refrigerator has been built, that allows measurements at a base temperature of 25 mK in magnetic field up to 7.5 T with low mechanical and electronic noise. The cryostat is not larger than conventional helium bath cryo…
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We have designed and built a scanning tunneling microscope (STM) setup for operation at millikelvin temperatures in ultra high vacuum. A compact cryostat with an integrated dilution refrigerator has been built, that allows measurements at a base temperature of 25 mK in magnetic field up to 7.5 T with low mechanical and electronic noise. The cryostat is not larger than conventional helium bath cryostats (23 and 13 liters of nitrogen and helium respectively), so that the setup does not require a large experimental hall and fits easily into a standard lab space. Mechanical vibrations with running dilution circulation were kept below 300 fm/$\sqrt{\mathrm{Hz}}$ by mechanically decoupling the STM from the cryostat and the pumping system. All electronic input lines were low-pass filtered, reducing the electronic temperature to below 100 mK, as deduced from the quasiparticle peaks of superconducting aluminium. The microscope is optically accessible in the parked position, making sample and tip exchange fast and user-friendly. For measurement the STM is lowered 60 mm down so that the sample ends in the middle of a wet superconducting magnetic coil.
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Submitted 11 June, 2018; v1 submitted 8 June, 2018;
originally announced June 2018.
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A new family of field-stable and highly sensitive SQUID current sensors based on sub-micrometer cross-type Josephson junctions
Authors:
M. Schmelz,
V. Zakosarenko,
T. Schönau,
S. Anders,
J. Kunert,
M. Meyer,
H. -G. Meyer,
R. Stolz
Abstract:
We report on the development of a new family of SQUID current sensors based on sub-micron cross-type Josephson tunnel junctions. Their low total junction capacitance permit high usable voltage swings of more than 100 μV and exceptional low noise of the SQUIDs at 4.2 K. Integrated rf-filter as well as high tolerable background fields during cool-down of up to 9.6 mT enable their highly reliable and…
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We report on the development of a new family of SQUID current sensors based on sub-micron cross-type Josephson tunnel junctions. Their low total junction capacitance permit high usable voltage swings of more than 100 μV and exceptional low noise of the SQUIDs at 4.2 K. Integrated rf-filter as well as high tolerable background fields during cool-down of up to 9.6 mT enable their highly reliable and easy use. With input coil inductances ranging from 10 nH to 2.8 μH and current sensitivities and coupled energy resolution down to 65 fA/Hz^{1/2} and below 10 h, respectively, they are a versatile tool for numerous applications.
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Submitted 16 June, 2017;
originally announced June 2017.
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Composite fermion basis for two-component Bose gases
Authors:
Ola Liabøtrø,
Marius Ladegård Meyer
Abstract:
Despite its success, the composite fermion (CF) construction possesses some mathematical features that have, until recently, not been fully understood. In particular, it is known to produce wave functions that are not necessarily orthogonal, or even linearly independent, after projection to the lowest Landau level. While this is usually not a problem in practice in the quantum Hall regime, we have…
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Despite its success, the composite fermion (CF) construction possesses some mathematical features that have, until recently, not been fully understood. In particular, it is known to produce wave functions that are not necessarily orthogonal, or even linearly independent, after projection to the lowest Landau level. While this is usually not a problem in practice in the quantum Hall regime, we have previously shown that it presents a technical challenge for rotating Bose gases with low angular momentum. These are systems where the CF approach yields surprisingly good approximations to the exact eigenstates of weak short-range interactions, and so solving the problem of linearly dependent wave functions is of interest. It can also be useful for studying higher bands of fermionic quantum Hall states. Here we present several ways of constructing a basis for the space of so-called "simple" CF states for two-component rotating Bose gases in the lowest Landau level, and prove that they all give sets of linearly independent wave functions that span the space. Using this basis, we study the structure of the lowest-lying state using so-called restricted wave functions. We also examine the scaling of the overlap between the exact and CF wave functions at the maximal possible angular momentum for simple states.
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Submitted 16 January, 2017;
originally announced January 2017.
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Monolayer graphene as dissipative membrane in an optical resonator
Authors:
Hendrik M. Meyer,
Moritz Breyer,
Michael Köhl
Abstract:
We experimentally demonstrate coupling of an atomically thin, free-standing graphene membrane to an optical cavity. By changing the position of the membrane along the standing-wave field of the cavity we tailor the dissipative coupling between the membrane and the cavity, and we show that the dissipative coupling can outweigh the dispersive coupling. Such a system, for which controlled dissipation…
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We experimentally demonstrate coupling of an atomically thin, free-standing graphene membrane to an optical cavity. By changing the position of the membrane along the standing-wave field of the cavity we tailor the dissipative coupling between the membrane and the cavity, and we show that the dissipative coupling can outweigh the dispersive coupling. Such a system, for which controlled dissipation prevails dispersion, will prove useful for novel laser-cooling schemes in optomechanics. In addition, we have determined the continuous-wave optical damage threshold of free-standing monolayer graphene of 1.8(4)~MW/cm$^2$ at 780nm.
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Submitted 25 June, 2016;
originally announced June 2016.
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Nickel-cobalt-titanate thin films - new sustainable magnetic oxides
Authors:
Yukari Fujioka,
Johannes Frantti,
Christopher Rouleau,
Alexander Puretzky,
Harry M. Meyer
Abstract:
Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25<x<1, were grown by pulsed laser deposition on sapphire substrates. There is a large window in which both Ni/Co ratio and x can be chosen independently. In the prototype ilmenite and corundum structures one third of the octahedra are vacant. The reported structure is obtained by filling vacant…
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Single phase nickel-cobalt-titanate thin films with a formula A1+2xTi1-xO3, where A is Ni2+,Co2+ and -0.25<x<1, were grown by pulsed laser deposition on sapphire substrates. There is a large window in which both Ni/Co ratio and x can be chosen independently. In the prototype ilmenite and corundum structures one third of the octahedra are vacant. The reported structure is obtained by filling vacant (x>0) or emptying filled (x<0) octahedra. When x = 1 all octahedra are filled. Two factors controlling the magnetism and crystal distortion are identified. First is a direct overlap between the adjacent cation d-orbitals resulting in a bond formation and magnetic interactions between the cations. This is most clearly revealed as a crystal distortion in the x approximately 0 compositions with approximately equal amounts of Ni and Co: the distortion of the x approximately 0 compound is a function of Ni/Co ratio. The second factor is x, which controls the cation shift towards a vacant octahedron. The displacement decreases and the symmetry increases with decreasing Ti content as was revealed by x-ray diffraction and Raman spectroscopy. When all octahedra are filled the cations prefer octahedron center positions. Also the number density of cations has increased by a factor of 50 percent when compared to the ilmenite structure. The number density ratios of Ni/Co cations between x=1 and x=0 compounds is 3. The Raman and x-ray diffraction data collected on samples with x = 1 or close to 1 are interpreted in terms of P63/mmc space group.
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Submitted 14 October, 2016; v1 submitted 14 June, 2016;
originally announced June 2016.
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Linear dependencies between Composite Fermion states
Authors:
M. L. Meyer,
O. Liabøtrø,
S. Viefers
Abstract:
It has been observed that the composite fermion (CF) approach tends to overcount the number of linearly independent candidate states for fixed sets of quantum numbers [number of particles, total angular momentum, and (pseudo)spin if applicable]. That is, CF Slater determinants that are orthogonal before projection, may lead to wave functions that are identical, or possess linear dependencies, afte…
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It has been observed that the composite fermion (CF) approach tends to overcount the number of linearly independent candidate states for fixed sets of quantum numbers [number of particles, total angular momentum, and (pseudo)spin if applicable]. That is, CF Slater determinants that are orthogonal before projection, may lead to wave functions that are identical, or possess linear dependencies, after projection. This has been pointed out both in the context of rotating bosons in the lowest Landau level, and for excited bands of the (fermionic) fractional quantum Hall effect. We present a systematic approach that enables us to reveal all linear dependencies between bosonic compact states in the lowest CF "cyclotron energy" sub-band, and almost all dependencies in higher sub-bands, at the level of the CF Slater determinants, i.e. before projection, which implies a major computational simplification. Our approach is introduced for so-called simple states of two-species rotating bosons, and then generalised to generic compact bosonic states, both one- and two-species. Some perspectives also apply to fermionic systems. The identities and linear dependencies we find, are analytically exact for "brute force" projection in the disk geometry.
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Submitted 15 July, 2015;
originally announced July 2015.
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Local Aspects of Hydrogen-Induced Metallization of the ZnO(10$\mathbf{\overline{1}}$0) Surface
Authors:
J. -C. Deinert,
O. T. Hofmann,
M. Meyer,
P. Rinke,
J. Stähler
Abstract:
This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable…
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This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable and H acting as an electron donor leads to the formation of a charge accumulation layer and to surface metallization. The increase of the number of O--H bonds leads to a reversal in adsorption energies such that Zn--H bonds become favored at sites close to existing O--H bonds, which results in a gradual extenuation of the metallization. The corresponding surface potential changes are localized within a few nanometers both laterally and normal to the surface. This localized character is experimentally corroborated by using sub-surface bound excitons at the ZnO(10${\overline{1}}$0) surface as a local probe. The pronounced and comparably localized effect of small amounts of hydrogen at this surface strongly suggests metallic character of ZnO surfaces under technologically relevant conditions and may, thus, be of high importance for energy level alignment at ZnO-based junctions in general.
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Submitted 22 June, 2015; v1 submitted 17 February, 2015;
originally announced February 2015.
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Deviation From the Landau-Lifshitz-Gilbert equation in the Inertial regime of the Magnetization
Authors:
E. Olive,
Y. Lansac,
M. Meyer,
M. Hayoun,
J. -E. Wegrowe
Abstract:
We investigate in details the inertial dynamics of a uniform magnetization in the ferromagnetic resonance (FMR) context. Analytical predictions and numerical simulations of the complete equations within the Inertial Landau-Lifshitz-Gilbert (ILLG) model are presented. In addition to the usual precession resonance, the inertial model gives a second resonance peak associated to the nutation dynamics…
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We investigate in details the inertial dynamics of a uniform magnetization in the ferromagnetic resonance (FMR) context. Analytical predictions and numerical simulations of the complete equations within the Inertial Landau-Lifshitz-Gilbert (ILLG) model are presented. In addition to the usual precession resonance, the inertial model gives a second resonance peak associated to the nutation dynamics provided that the damping is not too large. The analytical resolution of the equations of motion yields both the precession and nutation angular frequencies. They are function of the inertial dynamics characteristic time $τ$, the dimensionless damping $α$ and the static magnetic field $H$. A scaling function with respect to $ατγH$ is found for the nutation angular frequency, also valid for the precession angular frequency when $ατγH\gg 1$. Beyond the direct measurement of the nutation resonance peak, we show that the inertial dynamics of the magnetization has measurable effects on both the width and the angular frequency of the precession resonance peak when varying the applied static field. These predictions could be used to experimentally identify the inertial dynamics of the magnetization proposed in the ILLG model.
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Submitted 11 December, 2014;
originally announced December 2014.
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Direct photonic coupling of a semiconductor quantum dot and a trapped ion
Authors:
H. M. Meyer,
R. Stockill,
M. Steiner,
C. Le Gall,
C. Matthiesen,
E. Clarke,
A. Ludwig,
J. Reichel,
M. Atatüre,
M. Köhl
Abstract:
Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of an $\textrm{Yb}^+$ ion. We ameliorate the effect of the sixty-fold mismatch of the radiative l…
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Coupling individual quantum systems lies at the heart of building scalable quantum networks. Here, we report the first direct photonic coupling between a semiconductor quantum dot and a trapped ion and we demonstrate that single photons generated by a quantum dot controllably change the internal state of an $\textrm{Yb}^+$ ion. We ameliorate the effect of the sixty-fold mismatch of the radiative linewidths with coherent photon generation and a high-finesse fiber-based optical cavity enhancing the coupling between the single photon and the ion. The transfer of information presented here via the classical correlations between the $σ_z$-projection of the quantum-dot spin and the internal state of the ion provides a promising step towards quantum state-transfer in a hybrid photonic network.
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Submitted 3 November, 2014;
originally announced November 2014.
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Ultrafast exciton formation at the ZnO(10${\overline{\textbf{1}}}$0) surface
Authors:
J. -C. Deinert,
D. Wegkamp,
M. Meyer,
C. Richter,
M. Wolf,
J. Stähler
Abstract:
We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces…
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We study the ultrafast quasiparticle dynamics in and below the ZnO conduction band using femtosecond time-resolved two-photon photoelectron spectroscopy. Above band gap excitation causes hot electron relaxation by electron-phonon scattering down to the Fermi level $E_\text{F}$ followed by ultrafast (200 fs) formation of a surface exciton (SX). Transient screening of the Coulomb interaction reduces the SX formation probability at high excitation densities near the Mott limit. Located just below the surface, the SX are stable with regard to hydrogen-induced work function modifications and thus the ideal prerequisite for resonant energy transfer applications.
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Submitted 30 September, 2014;
originally announced September 2014.
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Rotational properties of two-component Bose gases in the lowest Landau level
Authors:
M. L. Meyer,
G. J. Sreejith,
S. Viefers
Abstract:
We study the rotational (yrast) spectra of dilute two-component atomic Bose gases in the low angular momentum regime, assuming equal interspecies and intraspecies interaction. Our analysis employs the composite fermion (CF) approach including a pseudospin degree of freedom. While the CF approach is not {\it a priori} expected to work well in this angular momentum regime, we show that composite fer…
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We study the rotational (yrast) spectra of dilute two-component atomic Bose gases in the low angular momentum regime, assuming equal interspecies and intraspecies interaction. Our analysis employs the composite fermion (CF) approach including a pseudospin degree of freedom. While the CF approach is not {\it a priori} expected to work well in this angular momentum regime, we show that composite fermion diagonalization gives remarkably accurate approximations to low energy states in the spectra. For angular momenta $0 < L < M$ (where $N$ and $M$ denote the numbers of particles of the two species, and $M \geq N$), we find that the CF states span the full Hilbert space and provide a convenient set of basis states which, by construction, are eigenstates of the symmetries of the Hamiltonian. Within this CF basis, we identify a subset of the basis states with the lowest $Λ$-level kinetic energy. Diagonalization within this significally smaller subspace constitutes a major computational simplification and provides very close approximations to ground states and a number of low-lying states within each pseudospin and angular momentum channel.
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Submitted 3 March, 2014;
originally announced March 2014.
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Active Brownian agents with concentration-dependent chemotactic sensitivity
Authors:
Marcel Meyer,
Lutz Schimansky-Geier,
Pawel Romanczuk
Abstract:
We study a biologically motivated model of overdamped, autochemotactic Brownian agents with concentration-dependent chemotactic sensitivity. The agents in our model move stochastically and produce a chemical ligand at their current position. The ligand concentration obeys a reaction-diffusion equation and acts as a chemoattractant for the agents, which bias their motion towards higher concentratio…
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We study a biologically motivated model of overdamped, autochemotactic Brownian agents with concentration-dependent chemotactic sensitivity. The agents in our model move stochastically and produce a chemical ligand at their current position. The ligand concentration obeys a reaction-diffusion equation and acts as a chemoattractant for the agents, which bias their motion towards higher concentrations of the dynamically altered chemical field. We explore the impact of concentration-dependent response to chemoattractant gradients on large-scale pattern formation, by deriving a coarse-grained macroscopic description of the individual based model, and compare the conditions for emergence of inhomogeneous solutions for different variants of the chemotactic sensitivity. We focus primarily on the so-called "Receptor Law" sensitivity, which models a non-linear decrease of chemotactic sensitivity with increasing ligand concentration. Our results reveal qualitative differences between the "Receptor-Law", the constant chemotactic response and the so-called "Log-Law", with respect to stability of the homogeneous solution, as well as the emergence of different patterns (labyrinthine structures, clusters and bubbles) via spinodal-decomposition or nucleation. We discuss two limiting cases, where the model can be reduced to the dynamics of single species: (I) the agent density governed by an density-dependent effective diffusion coefficient and (II) the ligand-field with an effective bistable, time-dependent reaction rate. In the end, we turn to single clusters of agents, studying domain growth and determining mean characteristics of the stationary inhomogeneous state. Analytical results are confirmed and extended by large-scale GPU simulations of the individual based model.
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Submitted 8 November, 2013; v1 submitted 30 October, 2013;
originally announced October 2013.
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Cotunneling, current blockade, and backaction forces in nanobeams close to the Euler buckling instability
Authors:
Guillaume Weick,
Dominique M. -A. Meyer
Abstract:
Single-electron transistors embedded in a vibrating nanoresonator such as a doubly-clamped carbon nanotube exhibit effects stemming from the coupling between electronic and vibrational degrees of freedom. In particular, a capacitive electromechanical coupling induces a blockade of the current at low bias voltage. It has been recently shown theoretically within a sequential-tunneling approximation…
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Single-electron transistors embedded in a vibrating nanoresonator such as a doubly-clamped carbon nanotube exhibit effects stemming from the coupling between electronic and vibrational degrees of freedom. In particular, a capacitive electromechanical coupling induces a blockade of the current at low bias voltage. It has been recently shown theoretically within a sequential-tunneling approximation that this current blockade can be enhanced by orders of magnitude when the suspended structure is brought to the Euler buckling instability. Here, we investigate the role of cotunneling on the predicted enhancement and show that the latter is not suppressed by cotunneling effects. We further demonstrate that despite the fact that the current blockade is difficult to measure far from the Euler instability, the backaction of the current flow on the nanobeam frequency may be easier to observe.
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Submitted 30 September, 2011; v1 submitted 19 July, 2011;
originally announced July 2011.
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Evidence of natural isotopic distribution from single-molecule SERS
Authors:
P. G. Etchegoin,
E. C. Le Ru,
M. Meyer
Abstract:
We report on the observation of the natural isotopic spread of carbon from single-molecule Surface Enhanced Raman Spectroscopy (SM-SERS). By choosing a dye molecule with a very localized Raman active vibration in a cyano bond (C$\equiv$N triple bond), we observe (in a SERS colloidal liquid) a small fraction of SM-SERS events where the frequency of the cyano mode is softened and in agreement with…
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We report on the observation of the natural isotopic spread of carbon from single-molecule Surface Enhanced Raman Spectroscopy (SM-SERS). By choosing a dye molecule with a very localized Raman active vibration in a cyano bond (C$\equiv$N triple bond), we observe (in a SERS colloidal liquid) a small fraction of SM-SERS events where the frequency of the cyano mode is softened and in agreement with the effect of substituting $^{12}$C by the next most abundant $^{13}$C isotope. This example adds another demonstration of single molecule sensitivity in SERS through isotopic editing which is done, in this case, not by artificial isotopic editing but rather by nature itself. It also highlights SERS as a unique spectroscopic tool, capable of detecting an isotopic change in one atom of a single molecule.
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Submitted 3 November, 2008;
originally announced November 2008.
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Piezoelectric exciton-acoustic phonon coupling in single quantum dots
Authors:
D. Sarkar,
H. P. van der Meulen,
J. M. Calleja,
J. M. Meyer,
R. J. Haug,
K. Pierz
Abstract:
Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attribute…
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Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton-acoustic phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
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Submitted 14 October, 2008;
originally announced October 2008.
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Resonant Tunnelling through InAs Quantum Dots in Tilted Magnetic Fields: Experimental Determination of the g-factor Anisotropy
Authors:
J. M. Meyer,
I. Hapke-Wurst,
U. Zeitler,
R. J. Haug,
K. Pierz
Abstract:
We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dep…
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We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dependence is found to follow the phenomenological behaviour g* (theta) = \sqrt{(g*_\parallel cos(theta)^2 + (g*_\perp sin(theta)^2}.
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Submitted 22 September, 2000;
originally announced September 2000.
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Hopping Transport in the Presence of Site Energy Disorder: Temperature and Concentration Scaling of Conductivity Spectra
Authors:
M. Porto,
P. Maass,
M. Meyer,
A. Bunde,
W. Dieterich
Abstract:
Recent measurements on ion conducting glasses have revealed that conductivity spectra for various temperatures and ionic concentrations can be superimposed onto a common master curve by an appropriate rescaling of the conductivity and frequency. In order to understand the origin of the observed scaling behavior, we investigate by Monte Carlo simulations the diffusion of particles in a lattice wi…
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Recent measurements on ion conducting glasses have revealed that conductivity spectra for various temperatures and ionic concentrations can be superimposed onto a common master curve by an appropriate rescaling of the conductivity and frequency. In order to understand the origin of the observed scaling behavior, we investigate by Monte Carlo simulations the diffusion of particles in a lattice with site energy disorder for a wide range of both temperatures and concentrations. While the model can account for the changes in ionic activation energies upon changing the concentration, it in general yields conductivity spectra that exhibit no scaling behavior. However, for typical concentrations and sufficiently low temperatures, a fairly good data collapse is obtained analogous to that found in experiment.
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Submitted 9 November, 1999;
originally announced November 1999.
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Scaling of the distribution of price fluctuations of individual companies
Authors:
V. Plerou,
P. Gopikrishnan,
L. A. N. Amaral,
M. Meyer,
H. E. Stanley
Abstract:
We present a phenomenological study of stock price fluctuations of individual companies. We systematically analyze two different databases covering securities from the three major US stock markets: (a) the New York Stock Exchange, (b) the American Stock Exchange, and (c) the National Association of Securities Dealers Automated Quotation stock market. Specifically, we consider (i) the trades and…
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We present a phenomenological study of stock price fluctuations of individual companies. We systematically analyze two different databases covering securities from the three major US stock markets: (a) the New York Stock Exchange, (b) the American Stock Exchange, and (c) the National Association of Securities Dealers Automated Quotation stock market. Specifically, we consider (i) the trades and quotes database, for which we analyze 40 million records for 1000 US companies for the 2-year period 1994--95, and (ii) the Center for Research and Security Prices database, for which we analyze 35 million daily records for approximately 16,000 companies in the 35-year period 1962--96. We study the probability distribution of returns over varying time scales $Δt$, where $Δt$ varies by a factor of $\approx 10^5$---from 5 min up to $\approx$ 4 years. For time scales from 5~min up to approximately 16~days, we find that the tails of the distributions can be well described by a power-law decay, characterized by an exponent $α\approx 3$ ---well outside the stable Lévy regime $0 < α< 2$. For time scales $Δt \gg (Δt)_{\times} \approx 16 $days, we observe results consistent with a slow convergence to Gaussian behavior. We also analyze the role of cross correlations between the returns of different companies and relate these correlations to the distribution of returns for market indices.
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Submitted 10 July, 1999;
originally announced July 1999.
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Apparent multifractality in financial time series
Authors:
Jean-Philippe Bouchaud,
Marc Potters,
Martin Meyer
Abstract:
We present a exactly soluble model for financial time series that mimics the long range volatility correlations known to be present in financial data. Although our model is `monofractal' by construction, it shows apparent multiscaling as a result of a slow crossover phenomenon on finite time scales. Our results suggest that it might be hard to distinguish apparent and true multifractal behavior…
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We present a exactly soluble model for financial time series that mimics the long range volatility correlations known to be present in financial data. Although our model is `monofractal' by construction, it shows apparent multiscaling as a result of a slow crossover phenomenon on finite time scales. Our results suggest that it might be hard to distinguish apparent and true multifractal behavior in financial data. Our model also leads to a new family of stable laws for sums of correlated random variables.
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Submitted 23 June, 1999;
originally announced June 1999.
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Ivory Tower Universities and Competitive Business Firms
Authors:
Vasiliki Plerou,
Luis A. Nunes Amaral,
Parameswaran Gopikrishnan,
Martin Meyer,
H. Eugene Stanley
Abstract:
There is nowadays considerable interest on ways to quantify the dynamics of research activities, in part due to recent changes in research and development (R&D) funding. Here, we seek to quantify and analyze university research activities, and compare their growth dynamics with those of business firms. Specifically, we analyze five distinct databases, the largest of which is a National Science F…
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There is nowadays considerable interest on ways to quantify the dynamics of research activities, in part due to recent changes in research and development (R&D) funding. Here, we seek to quantify and analyze university research activities, and compare their growth dynamics with those of business firms. Specifically, we analyze five distinct databases, the largest of which is a National Science Foundation database of the R&D expenditures for science and engineering of 719 United States (US) universities for the 17-year period 1979--1995. We find that the distribution of growth rates displays a ``universal'' form that does not depend on the size of the university or on the measure of size used, and that the width of this distribution decays with size as a power law. Our findings are quantitatively similar to those independently uncovered for business firms, and consistent with the hypothesis that the growth dynamics of complex organizations may be governed by universal mechanisms.
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Submitted 15 June, 1999;
originally announced June 1999.
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Scaling of the distribution of fluctuations of financial market indices
Authors:
Parameswaran Gopikrishnan,
Vasiliki Plerou,
Luis A. Nunes Amaral,
Martin Meyer,
H. Eugene Stanley
Abstract:
We study the distribution of fluctuations over a time scale $Δt$ (i.e., the returns) of the S&P 500 index by analyzing three distinct databases. Database (i) contains approximately 1 million records sampled at 1 min intervals for the 13-year period 1984-1996, database (ii) contains 8686 daily records for the 35-year period 1962-1996, and database (iii) contains 852 monthly records for the 71-yea…
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We study the distribution of fluctuations over a time scale $Δt$ (i.e., the returns) of the S&P 500 index by analyzing three distinct databases. Database (i) contains approximately 1 million records sampled at 1 min intervals for the 13-year period 1984-1996, database (ii) contains 8686 daily records for the 35-year period 1962-1996, and database (iii) contains 852 monthly records for the 71-year period 1926-1996. We compute the probability distributions of returns over a time scale $Δt$, where $Δt$ varies approximately over a factor of 10^4 - from 1 min up to more than 1 month. We find that the distributions for $Δt \leq$ 4 days (1560 mins) are consistent with a power-law asymptotic behavior, characterized by an exponent $α\approx 3$, well outside the stable Lévy regime $0 < α< 2$. To test the robustness of the S&P result, we perform a parallel analysis on two other financial market indices. Database (iv) contains 3560 daily records of the NIKKEI index for the 14-year period 1984-97, and database (v) contains 4649 daily records of the Hang-Seng index for the 18-year period 1980-97. We find estimates of $α$ consistent with those describing the distribution of S&P 500 daily-returns. One possible reason for the scaling of these distributions is the long persistence of the autocorrelation function of the volatility. For time scales longer than $(Δt)_{\times} \approx 4$ days, our results are consistent with slow convergence to Gaussian behavior.
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Submitted 20 May, 1999;
originally announced May 1999.
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The statistical properties of the volatility of price fluctuations
Authors:
Yanhui Liu,
Parameswaran Gopikrishnan,
Pierre Cizeau,
Martin Meyer,
Chung-Kang Peng,
H. Eugene Stanley
Abstract:
We study the statistical properties of volatility---a measure of how much the market is likely to fluctuate. We estimate the volatility by the local average of the absolute price changes. We analyze (a) the S&P 500 stock index for the 13-year period Jan 1984 to Dec 1996 and (b) the market capitalizations of the largest 500 companies registered in the Trades and Quotes data base, documenting all…
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We study the statistical properties of volatility---a measure of how much the market is likely to fluctuate. We estimate the volatility by the local average of the absolute price changes. We analyze (a) the S&P 500 stock index for the 13-year period Jan 1984 to Dec 1996 and (b) the market capitalizations of the largest 500 companies registered in the Trades and Quotes data base, documenting all trades for all the securities listed in the three major stock exchanges in the US for the 2-year period Jan 1994 to Dec 1995. For the S&P 500 index, the probability density function of the volatility can be fit with a log-normal form in the center. However, the asymptotic behavior is better described by a power-law distribution characterized by an exponent 1 + μ\approx 4. For individual companies, we find a power law asymptotic behavior of the probability distribution of volatility with exponent 1 + μ\approx 4, similar to the S&P 500 index. In addition, we find that the volatility distribution scales for a range of time intervals. Further, we study the correlation function of the volatility and find power law decay with long persistence for the S&P 500 index and the individual companies with a crossover at approximately 1.5 days. To quantify the power-law correlations, we apply power spectrum analysis and a recently-developed modified root-mean-square analysis, termed detrended fluctuation analysis (DFA). For the S&P 500 index, DFA estimates for the exponents characterizing the power law correlations are α_1=0.66 for short time scales (within \approx 1.5 days) and α_2=0.93 for longer time scales (up to a year). For individual companies, we find α_1=0.60 and α_2=0.74, respectively. The power spectrum gives consistent estimates of the two power-law exponents.
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Submitted 24 March, 1999; v1 submitted 24 March, 1999;
originally announced March 1999.
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Environmental changes, co-extinction, and patterns in the fossil record
Authors:
Luis A. N. Amaral,
Martin Meyer
Abstract:
We introduce a new model for large scale evolution and extinction in which species are organized into food chains. The system evolves by two processes: origination/speciation and extinction. In the model, extinction of a given species can be due to an externally induced change in the environment or due to the extinction of all preys of that species (co-extinction). The model is able to reproduce…
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We introduce a new model for large scale evolution and extinction in which species are organized into food chains. The system evolves by two processes: origination/speciation and extinction. In the model, extinction of a given species can be due to an externally induced change in the environment or due to the extinction of all preys of that species (co-extinction). The model is able to reproduce the empirical observations, such as the statistical fractality of the fossil record or the scale-free distribution of extinction events, without invoking extinctions due to competition between species.
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Submitted 8 April, 1998;
originally announced April 1998.
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Universal features in the growth dynamics of complex organizations
Authors:
Youngki Lee,
Luis A. N. Amaral,
David Canning,
Martin Meyer,
H. Eugene Stanley
Abstract:
We analyze the fluctuations in the gross domestic product (GDP) of 152 countries for the period 1950--1992. We find that (i) the distribution of annual growth rates for countries of a given GDP decays with ``fatter'' tails than for a Gaussian, and (ii) the width of the distribution scales as a power law of GDP with a scaling exponent $β\approx 0.15$. Both findings are in surprising agreement wit…
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We analyze the fluctuations in the gross domestic product (GDP) of 152 countries for the period 1950--1992. We find that (i) the distribution of annual growth rates for countries of a given GDP decays with ``fatter'' tails than for a Gaussian, and (ii) the width of the distribution scales as a power law of GDP with a scaling exponent $β\approx 0.15$. Both findings are in surprising agreement with results on firm growth. These results are consistent with the hypothesis that the evolution of organizations with complex structure is governed by similar growth mechanisms.
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Submitted 8 April, 1998;
originally announced April 1998.
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Inverse Cubic Law for the Probability Distribution of Stock Price Variations
Authors:
Parameswaran Gopikrishnan,
Martin Meyer,
Luis A Nunes Amaral,
H Eugene Stanley
Abstract:
The probability distribution of stock price changes is studied by analyzing a database (the Trades and Quotes Database) documenting every trade for all stocks in three major US stock markets, for the two year period Jan 1994 -- Dec 1995. A sample of 40 million data points is extracted, which is substantially larger than studied hitherto. We find an asymptotic power-law behavior for the cumulativ…
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The probability distribution of stock price changes is studied by analyzing a database (the Trades and Quotes Database) documenting every trade for all stocks in three major US stock markets, for the two year period Jan 1994 -- Dec 1995. A sample of 40 million data points is extracted, which is substantially larger than studied hitherto. We find an asymptotic power-law behavior for the cumulative distribution with an exponent alpha approximately 3, well outside the Levy regime 0< alpha <2.
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Submitted 11 May, 1998; v1 submitted 30 March, 1998;
originally announced March 1998.
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Volatility distribution in the S&P500 Stock Index
Authors:
Pierre Cizeau,
Yanhui Liu,
Martin Meyer,
C. -K. Peng,
H. Eugene Stanley
Abstract:
We study the volatility of the S&P500 stock index from 1984 to 1996 and find that the volatility distribution can be very well described by a log-normal function. Further, using detrended fluctuation analysis we show that the volatility is power-law correlated with Hurst exponent $α\cong0.9$.
We study the volatility of the S&P500 stock index from 1984 to 1996 and find that the volatility distribution can be very well described by a log-normal function. Further, using detrended fluctuation analysis we show that the volatility is power-law correlated with Hurst exponent $α\cong0.9$.
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Submitted 19 August, 1997;
originally announced August 1997.
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Correlations in Economic Time Series
Authors:
Yanhui Liu,
Pierre Cizeau,
Martin Meyer,
Chung-Kang Peng,
H. Eugene Stanley
Abstract:
The correlation function of a financial index of the New York stock exchange, the S&P 500, is analyzed at 1 min intervals over the 13-year period, Jan 84 -- Dec 96. We quantify the correlations of the absolute values of the index increment. We find that these correlations can be described by two different power laws with a crossover time t_\times\approx 600 min. Detrended fluctuation analysis gi…
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The correlation function of a financial index of the New York stock exchange, the S&P 500, is analyzed at 1 min intervals over the 13-year period, Jan 84 -- Dec 96. We quantify the correlations of the absolute values of the index increment. We find that these correlations can be described by two different power laws with a crossover time t_\times\approx 600 min. Detrended fluctuation analysis gives exponents $α_1=0.66$ and $α_2=0.93$ for $t<t_\times$ and $t>t_\times$ respectively. Power spectrum analysis gives corresponding exponents $β_1=0.31$ and $β_2=0.90$ for $f>f_\times$ and $f< f_\times$ respectively.
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Submitted 3 June, 1997;
originally announced June 1997.