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Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting
Authors:
K. Radhanpura,
S. Hargreaves,
R. A. Lewis,
H. Krüger,
E. Rey,
P. -Z. Si,
T. Söhnel,
V. Jovic,
J. B. Metson,
G. I. N. Waterhouse,
A. A. Abiona,
W. J. Kemp,
A. P. Byrne,
M. C. Ridgeway,
H. Timmers,
J. D. Cashion,
W. P. Gates,
T. L. Greaves,
O. Dorjkhaidav,
E. Constable,
L. G. Gladkis,
J. M. Scarvell,
P. N. Smith,
C. J. Hamer,
O. Rojas
, et al. (20 additional authors not shown)
Abstract:
The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three da…
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The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three days of scientific sessions, as well as 2 poster sessions with a total of 49 poster presentations. All presenters were invited to submit a manuscript for publication in the conference proceedings. The length limits where six pages for invited papers and four pages for contributed papers. Each manuscript was reviewed by two anonymous referees and 18 papers were accepted for publication.
The accepted manuscripts are also available at the online publication section of the Australian Institute of Physics national web site (http://www.aip.org.au/).
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Submitted 18 July, 2011;
originally announced July 2011.
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Quantitative study of molecular N_2 trapped in disordered GaN:O films
Authors:
B. J. Ruck,
A. Koo,
U. D. Lanke,
F. Budde,
S. Granville,
H. J. Trodahl,
A. Bittar,
J. B. Metson,
V. J. Kennedy,
A. Markwitz
Abstract:
The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a clo…
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The structure of disordered GaN:O films grown by ion-assisted deposition is investigated using x-ray absorption near-edge spectroscopy and Raman spectroscopy. It is found that between 4 and 21 % of the nitrogen in the films is in the form of molecular N_2 that interacts only weakly with the surrounding matrix. The anion to cation ratio in the GaN:O host remains close to unity, and there is a close correlation between the N_2 fraction, the level of oxygen impurities, and the absence of short-range order in the GaN:O matrix.
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Submitted 9 August, 2004;
originally announced August 2004.
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Stabilization of amorphous GaN by oxygen
Authors:
F. Budde,
B. J. Ruck,
A. Koo,
S. Granville,
H. J. Trodahl,
A. Bittar,
G. V. M. Williams,
M. J. Ariza,
B. Bonnet,
D. J. Jones,
J. B. Metson,
S. Rubanov,
P. Munroe
Abstract:
Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence…
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Ion assisted deposition (IAD) has been investigated for the growth of GaN, and the resulting films studied by x-ray diffraction and absorption spectroscopy and by transmission electron microscopy. IAD grown stoichiometric GaN consists of random-stacked quasicrystals of some 3 nm diameter. Amorphous material is formed only by incorporation of 15% or more oxygen, which we attribute to the presence of non-tetrahedral bonds centered on oxygen. The ionic favourability of heteropolar bonds and its strikingly simple constraint to even-membered rings is the likely cause of the instability of stoichiometric a-GaN.
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Submitted 26 July, 2004;
originally announced July 2004.
