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Decomposition Process of Carboxylate MOF HKUST-1 Unveiled at the Atomic Scale Level
Authors:
Michela Todaro,
Gianpiero Buscarino,
Luisa Sciortino,
Antonino Alessi,
Fabrizio Messina,
Marco Taddei,
Marco Ranocchiari,
Marco Cannas,
Franco M. Gelardi
Abstract:
HKUST-1 is a metal-organic framework (MOF) which plays a significant role both in applicative and basic fields of research, thanks to its outstanding properties of adsorption and catalysis but also because it is a reference material for the study of many general properties of MOFs. Its metallic group comprises a pair of Cu2+ ions chelated by four carboxylate bridges, forming a structure known as p…
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HKUST-1 is a metal-organic framework (MOF) which plays a significant role both in applicative and basic fields of research, thanks to its outstanding properties of adsorption and catalysis but also because it is a reference material for the study of many general properties of MOFs. Its metallic group comprises a pair of Cu2+ ions chelated by four carboxylate bridges, forming a structure known as paddle-wheel unit, which is the heart of the material. However, previous studies have well established that the paddle-wheel is incline to hydrolysis. In fact, the prolonged exposure of the material to moisture promotes the hydrolysis of Cu-O bonds in the paddle-wheels, so breaking the crystalline network. The main objective of the present experimental investigation is the determination of the details of the structural defects induced by this process in the crystal and it has been successfully pursued by coupling the electron paramagnetic resonance spectroscopy with other more commonly considered techniques, as X-ray diffraction, surface area estimation and scanning electron microscopy. Thanks to this original approach we have recognized three stages of the process of decomposition of HKUST-1 and we have unveiled the details of the corresponding equilibrium structures of the paddle-wheels at the atomic scale level.
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Submitted 31 March, 2017;
originally announced April 2017.
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Temperature dependence of reflectivity of amorphous silicon dioxide: Evidence of delocalized excitons weakly scattered by phonons
Authors:
E. Vella,
F. Messina,
M. Cannas,
R. Boscaino
Abstract:
We studied the reflectivity spectra of amorphous silicon dioxide detected under vacuum UV synchrotron radiation as a function of temperature between 10 and 300 K. Kramers-Kronig dispersion analysis of reflectivity spectra allowed us to determine the absorption coefficient in the range from 8 to 17.5 eV. Spectra show four main peaks, the spectral positions of which are consistent with literature da…
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We studied the reflectivity spectra of amorphous silicon dioxide detected under vacuum UV synchrotron radiation as a function of temperature between 10 and 300 K. Kramers-Kronig dispersion analysis of reflectivity spectra allowed us to determine the absorption coefficient in the range from 8 to 17.5 eV. Spectra show four main peaks, the spectral positions of which are consistent with literature data. An appreciable dependence of the line-shape on temperature is observed for the first two peaks only. We demonstrate the exciton peak at 10.4 eV to have a very good Lorentzian band-shape at all the examined temperatures. Based on existing theoretical models, this allows to argue excitons in SiO2 to be weakly scattered by phonons, thus retaining their mobility properties notwithstanding the effects of exciton-phonon coupling and of intrinsic structural disorder of amorphous SiO2. Moreover, the observed temperature dependence of the peak position together with the features of the Urbach absorption tail and of self-trapped exciton emission allow us to estimate the main parameters ruling exciton dynamics in SiO2. The features of the intrinsic Urbach absorption tail can be satisfactorily explained as a consequence of those of the first excitonic peak, supporting the interpretation of the Urbach tail in SiO2 as a consequence of the momentary self-trapping of the 10.4 eV exciton. Finally, the characteristics of the other energy peaks are discussed and an excitonic origin also for the 11.6 eV peak is put forward. On the whole, our results show that exciton dynamics accounts for all optical properties of pure silicon dioxide from 8 up to 11 eV.
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Submitted 20 September, 2010;
originally announced September 2010.
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Evidence of delocalized excitons in amorphous solids
Authors:
Fabrizio Messina,
Eleonora Vella,
Marco Cannas,
Roberto Boscaino
Abstract:
We studied the temperature dependence of the absorption coefficient of amorphous SiO$_2$ in the range from 8 to 17.5~eV obtained by Kramers-Kronig dispersion analysis of reflectivity spectra. We demonstrate the main excitonic resonance at 10.4~eV to feature a close Lorentzian shape red-shifting with increasing temperature. This provides a strong evidence of excitons being delocalized notwithstandi…
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We studied the temperature dependence of the absorption coefficient of amorphous SiO$_2$ in the range from 8 to 17.5~eV obtained by Kramers-Kronig dispersion analysis of reflectivity spectra. We demonstrate the main excitonic resonance at 10.4~eV to feature a close Lorentzian shape red-shifting with increasing temperature. This provides a strong evidence of excitons being delocalized notwithstanding the structural disorder intrinsic to the amorphous system. Excitons turn out to be coupled to an average phonon mode of 83~meV energy.
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Submitted 29 June, 2010;
originally announced June 2010.
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Photoluminescence dispersion as a probe of structural inhomogeneity in silica
Authors:
Michele D'Amico,
Fabrizio Messina,
Marco Cannas,
Maurizio Leone,
Roberto Boscaino
Abstract:
We report time-resolved photoluminescence spectra of point defects in amorphous silicon dioxide (silica), in particular the decay kinetics of the emission signals of extrinsic Oxygen Deficient Centres of the second type from singlet and directly-excited triplet states are measured and used as a probe of structural inhomogeneity. Luminescence activity in sapphire ($α$-Al$_2$O$_3$) is studied as w…
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We report time-resolved photoluminescence spectra of point defects in amorphous silicon dioxide (silica), in particular the decay kinetics of the emission signals of extrinsic Oxygen Deficient Centres of the second type from singlet and directly-excited triplet states are measured and used as a probe of structural inhomogeneity. Luminescence activity in sapphire ($α$-Al$_2$O$_3$) is studied as well and used as a model system to compare the optical properties of defects in silica with those of defects embedded in a crystalline matrix. Only for defects in silica, we observe a variation of the decay lifetimes with emission energy and a time dependence of the first moment of the emission bands. These features are analyzed within a theoretical model with explicit hypothesis about the effect introduced by the disorder of vitreous systems. Separate estimations of the homogenous and inhomogeneous contributions to the measured emission linewidth are obtained: it is found that inhomogeneous effects strongly condition both the triplet and singlet luminescence activities of oxygen deficient centres in silica, although the degree of inhomogeneity of the triplet emission turns out to be lower than that of the singlet emission. Inhomogeneous effects appear to be negligible in sapphire.
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Submitted 10 September, 2008;
originally announced September 2008.
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Isoelectronic series of oxygen deficient centers in silica: experimental estimation of homogeneous and inhomogeneous spectral widths
Authors:
Michele D'Amico,
Fabrizio Messina,
Marco Cannas,
Maurizio Leone,
Roberto Boscaino
Abstract:
We report nanosecond time-resolved photoluminescence measurements on the isoelectronic series of oxygen deficient centers in amorphous silica, Si-ODC(II), Ge-ODC(II) and Sn-ODC(II) which are responsible of fluorescence activities at $\sim$4 eV under excitation at $\sim$5 eV. The dependence of the first moment of their emission band on time, and that of the radiative decay lifetime on emission en…
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We report nanosecond time-resolved photoluminescence measurements on the isoelectronic series of oxygen deficient centers in amorphous silica, Si-ODC(II), Ge-ODC(II) and Sn-ODC(II) which are responsible of fluorescence activities at $\sim$4 eV under excitation at $\sim$5 eV. The dependence of the first moment of their emission band on time, and that of the radiative decay lifetime on emission energy are analyzed within a theoretical model able to describe the effects introduced by disorder on the optical properties of the defects. We obtain separate estimates of the homogeneous and inhomogeneous contributions to the measured emission linewidth and we derive homogeneous spectroscopic features of the investigated point defects (Huangh-Rhys factor, homogeneous width, oscillator strength, vibrational frequency). The results point to a picture in which an oxygen deficient center localized on a heavier atom features a higher degree of inhomogeneity due to stronger local distortion of the surrounding matrix. For Si, Ge, Sn related defects the parameter $λ$, able to quantify inhomogeneity, results to be 65, 78 and 90$%, respectively.
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Submitted 9 September, 2008;
originally announced September 2008.
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Homogeneous and inhomogeneous contributions to the luminescence linewidth of point defects in amorphous solids: Quantitative assessment based on time-resolved emission spectroscopy
Authors:
Michele D Amico,
Fabrizio Messina,
Marco Cannas,
Maurizio Leone,
Roberto Boscaino
Abstract:
The article describes an experimental method that allows to estimate the inhomogeneous and homogeneous linewidths of the photoluminescence band of a point defect in an amorphous solid. We performed low temperature time-resolved luminescence measurements on two defects chosen as model systems for our analysis: extrinsic Oxygen Deficient Centers (ODC(II)) in amorphous silica and F+ 3 centers in cr…
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The article describes an experimental method that allows to estimate the inhomogeneous and homogeneous linewidths of the photoluminescence band of a point defect in an amorphous solid. We performed low temperature time-resolved luminescence measurements on two defects chosen as model systems for our analysis: extrinsic Oxygen Deficient Centers (ODC(II)) in amorphous silica and F+ 3 centers in crystalline Lithium Fluoride. Measurements evidence that only defects embedded in the amorphous matrix feature a dependence of the radiative decay lifetime on the emission energy and a time dependence of the first moment of the emission band. A theoretical model is developed to link these properties to the structural disorder typical of amorphous solids. Specifically, the observations on ODC(II) are interpreted by introducing a gaussian statistical distribution of the zero phonon line energy position. Comparison with the results obtained on F+ 3 crystalline defects strongly confirms the validity of the model. By analyzing experimental data within this frame, we obtain separate estimations of the homogenous and inhomogeneous contributions to the measured total linewidth of ODC(II), which results to be mostly inhomogeneous.
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Submitted 29 May, 2008;
originally announced May 2008.
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Role of hydrogen on the generation and decay of point defects in amorphous silica exposed to UV laser radiation
Authors:
F. Messina
Abstract:
This experimental PhD work deals with the generation and transformation processes of point defects induced by UV laser irradiation on amorphous silicon dioxide (silica). The investigation relies on several spectroscopic techniques used to probe the microscopic damage induced by UV laser on the material. The most innovative approach, however, is the measurement in situ of the absorption signals r…
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This experimental PhD work deals with the generation and transformation processes of point defects induced by UV laser irradiation on amorphous silicon dioxide (silica). The investigation relies on several spectroscopic techniques used to probe the microscopic damage induced by UV laser on the material. The most innovative approach, however, is the measurement in situ of the absorption signals related to laser-induced point defects. This technique yields new information on the kinetics of defect processes, inaccessible to previous works based only on stationary measurements of laser-induced damage. The main result is to show that a major damage mechanism of silica under 4.7eV laser radiation is the generation of E' centers (silicon dangling bond defects) by photolysis of pre-existing Si-H bonds. This process occurs by two-photon absorption of laser light, and the produced E' centers are unstable in a wide temperature range: in fact, rupture of Si-H produces hydrogen atoms H together with E'; hence, H atoms dimerize in H_2, which diffuses in the glass and reacts back with the E' centers causing their decay. The generation and decay kinetics of laser-induced E' centers are quantitatively modelled by considering the competition between the laser-induced breakage of Si-H and the concurrent reaction between E' and H_2. The latter reaction is studied in detail at several temperatures: some of its features are found to be affected by the disorder of the glass matrix; moreover, its kinetics is found to be activation-limited rather than diffusion-limited, contrary to what is usually found for the reactions of diffusing species with point defects.
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Submitted 5 March, 2007;
originally announced March 2007.
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Stability of E' centers induced by 4.7eV laser radiation in SiO2
Authors:
F. Messina,
M. Cannas
Abstract:
The kinetics of E' centers (silicon dangling bonds) induced by 4.7eV pulsed laser irradiation in dry fused silica was investigated by in situ optical absorption spectroscopy. The stability of the defects, conditioned by reaction with mobile hydrogen of radiolytic origin, is discussed and compared to results of similar experiments performed on wet fused silica. A portion of E' and hydrogen are mo…
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The kinetics of E' centers (silicon dangling bonds) induced by 4.7eV pulsed laser irradiation in dry fused silica was investigated by in situ optical absorption spectroscopy. The stability of the defects, conditioned by reaction with mobile hydrogen of radiolytic origin, is discussed and compared to results of similar experiments performed on wet fused silica. A portion of E' and hydrogen are most likely generated by laser-induced breaking of Si-H precursors, while an additional fraction of the paramagnetic centers arise from another formation mechanism. Both typologies of E' participate to the reaction with H_2 leading to the post-irradiation decay of the defects. This annealing process is slowed down on decreasing temperature and is frozen at T=200K, consistently with the diffusion properties of H_2 in silica.
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Submitted 2 March, 2007;
originally announced March 2007.
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Optical absorption induced by UV laser radiation in Ge-doped amorphous silica probed by in situ spectroscopy
Authors:
F. Messina,
M. Cannas,
R. Boscaino,
S. Grandi,
P. Mustarelli
Abstract:
We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape…
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We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation with an in situ technique, evidencing the growth of an absorption signal whose profile is characterized by two main peaks near 4.5eV and 5.7eV and whose shape depends on time. Electron spin resonance measurements performed ex situ a few hours after the end of exposure permit to complete the information acquired by optical absorption by detection of the paramagnetic Ge(1) and Ge-E' centers laser-induced in the samples.
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Submitted 2 March, 2007;
originally announced March 2007.
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Character of the reaction between molecular hydrogen and silicon dangling bond in amorphous SiO_2
Authors:
F. Messina,
M. Cannas
Abstract:
The passivation by diffusing H2 of silicon dangling bond defects (E' centers, induced by laser irradiation in amorphous SiO_2 (silica), is investigated in situ at several temperatures. It is found that the reaction between E' center and H_2 requires an activation energy of 0.38eV, and that its kinetics is not diffusion-limited. The results are compared with previous findings on the other fundame…
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The passivation by diffusing H2 of silicon dangling bond defects (E' centers, induced by laser irradiation in amorphous SiO_2 (silica), is investigated in situ at several temperatures. It is found that the reaction between E' center and H_2 requires an activation energy of 0.38eV, and that its kinetics is not diffusion-limited. The results are compared with previous findings on the other fundamental paramagnetic point defect in silica, the non bridging oxygen hole center, which features completely different reaction properties with H_2. Besides, a comparison is proposed with literature data on the reaction properties of surface E' centers, of E' centers embedded in silica films, and with theoretical calculations. In particular, the close agreement with the reaction properties of surface E' centers with H_2 leads to conclude that the bulk and surface E' varieties are indistinguishable from their reaction properties with molecular hydrogen.
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Submitted 2 March, 2007;
originally announced March 2007.
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Optical properties of Ge-oxygen defect center embedded in silica films
Authors:
F. Messina,
S. Agnello,
R. Boscaino,
M. Cannas,
S. Grandi,
E. Quartarone
Abstract:
The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation in the 10-300 K temperature range. This center exhibits two luminescence bands centered at 4.3eV and 3.2eV associated with its de-excitation from singlet (S1…
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The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation in the 10-300 K temperature range. This center exhibits two luminescence bands centered at 4.3eV and 3.2eV associated with its de-excitation from singlet (S1) and triplet (T1) states, respectively, that are linked by an intersystem crossing process. The comparison with results obtained from a bulk Ge-doped silica sample evidences that the efficiency of the intersystem crossing rate depends on the properties of the matrix embedding the Ge-oxygen defect centers, being more effective in the film than in the bulk counterpart.
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Submitted 2 March, 2007;
originally announced March 2007.
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Photochemical generation of E' centre from Si-H in amorphous SiO2 under pulsed ultraviolet laser radiation
Authors:
F. Messina,
M. Cannas
Abstract:
In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their con…
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In situ optical absorption spectroscopy was used to study the generation of E' centres in amorphous SiO_2 occurring by photo-induced breaking of Si-H groups under 4.7eV pulsed laser radiation. The dependence from laser intensity of the defect generation rate is consistent with a two-photon mechanism for Si-H rupture, while the growth and the saturation of the defects are conditioned by their concurrent annealing due to reaction with mobile hydrogen arising from the same precursor. A rate equation is proposed to model the kinetics of the defects and tested on experimental data.
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Submitted 2 March, 2007;
originally announced March 2007.
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Hydrogen-Related Conversion Processes of Ge-Related Point Defects in Silica Triggered by UV Laser Irradiation
Authors:
F. Messina,
M. Cannas
Abstract:
The conversion processes of Ge-related point defects triggered in amorphous SiO2 by 4.7eV laser exposure were investigated. Our study has focused on the interplay between the (=Ge•-H) H(II) center and the twofold coordinated Ge defect (=Ge••). The former is generated in the post-irradiation stage, while the latter decays both during and after exposure. The post-irradiation deca…
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The conversion processes of Ge-related point defects triggered in amorphous SiO2 by 4.7eV laser exposure were investigated. Our study has focused on the interplay between the (=Ge•-H) H(II) center and the twofold coordinated Ge defect (=Ge••). The former is generated in the post-irradiation stage, while the latter decays both during and after exposure. The post-irradiation decay kinetics of =Ge•• is isolated and found to be anti-correlated to the growth of H(II), at least at short times. From this finding it is suggested that both processes are due to trapping of radiolytic H0 at the diamagnetic defect site. Furthermore, the anti-correlated behavior is preserved also under repeated irradiation: light at 4.7eV destroys the already formed H(II) centers and restore their precursors =Ge••. This process leads to repeatability of the post-irradiation kinetics of the two species after multiple laser exposures. A comprehensive scheme of chemical reactions explaining the observed post-irradiation processes is proposed and tested against experimental data.
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Submitted 28 September, 2005;
originally announced September 2005.
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UV-Photoinduced Defects In Ge-Doped Optical Fibers
Authors:
F. Messina,
M. Cannas,
K. Medjahdi,
A. Boukenter,
Y. Ouerdane
Abstract:
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several…
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We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
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Submitted 17 July, 2005;
originally announced July 2005.
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Nd:YAG laser induced E' centers probed by in situ absorption measurements
Authors:
M. Cannas,
F. Messina
Abstract:
We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synt…
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We investigated various types of commercial silica irradiated with a pulsed Nd:YAG laser radiation (4.66 eV), with exposure time ranging up to 10000 s. Transient E' centers were probed in situ by measuring the amplitude of the optical absorption band at 5.8 eV (due to E' centers) both during and after irradiation. The laser-induced absorption is observed only in natural samples, whereas the synthetic materials exhibit high toughness to radiation effect. The reported results evidence that the kinetics of E' centers is influenced by their reaction with diffusing molecular hydrogen H2 made available by dimerization of radiolytic H0.
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Submitted 3 February, 2005;
originally announced February 2005.
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Influence of hydrogen on paramagnetic defects induced by UV laser exposure in natural silica
Authors:
F. Messina,
M. Cannas,
R. Boscaino
Abstract:
Diffusion limited reactions of point defects were investigated in amorphous SiO2 exposed to UV laser light. Electron spin resonance and in situ absorption measurements at room temperature evidenced the annealing of E' centers and the growth of H(II) centers both occurring in the post-irradiation stage and lasting a few hours. These transients are caused by reactions involving molecular hydrogen…
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Diffusion limited reactions of point defects were investigated in amorphous SiO2 exposed to UV laser light. Electron spin resonance and in situ absorption measurements at room temperature evidenced the annealing of E' centers and the growth of H(II) centers both occurring in the post-irradiation stage and lasting a few hours. These transients are caused by reactions involving molecular hydrogen H2, made available by dimerization of radiolytic H0.
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Submitted 26 October, 2004;
originally announced October 2004.
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In situ observation of the generation and annealing kinetics of E' centers induced in amorphous SiO2 by 4.7eV laser irradiation
Authors:
F. Messina,
M. Cannas
Abstract:
The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of radiolytic origin. Hydrogen-related annealing is active also during exposure and competes with the photo-induced generation of the centers until a saturation is rea…
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The kinetics of E' centers induced in silica by 4.7eV laser irradiation was investigated observing in situ their optical absorption band at 5.8 eV. After exposure the defects decay due to reaction with diffusing molecular hydrogen of radiolytic origin. Hydrogen-related annealing is active also during exposure and competes with the photo-induced generation of the centers until a saturation is reached. The concentrations of E' and H2 at saturation are proportional, so indicating that the UV-induced generation processes of the two species are correlated. These results are consistent with a model in which E' and hydrogen are generated from a common precursor Si-H.
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Submitted 26 February, 2005; v1 submitted 24 October, 2004;
originally announced October 2004.
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Bleaching of optical activity induced by UV Laser exposure in natural silica
Authors:
M. Cannas,
F. Messina
Abstract:
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-ir…
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We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
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Submitted 22 October, 2004;
originally announced October 2004.
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H(II) centers in natural silica under repeated UV laser irradiations
Authors:
F. Messina,
M. Cannas,
R. Boscaino
Abstract:
We investigated the kinetics of H(II) centers (=Ge'-H) in natural silica under repeated 266nm UV irradiations performed by a Nd:YAG pulsed laser. UV photons temporarily destroy these paramagnetic defects, their reduction being complete within 250 pulses. After re-irradiation, H(II) centers grow again, and the observed recovery kinetics depends on the irradiation dose; multiple 2000 pulses re-irr…
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We investigated the kinetics of H(II) centers (=Ge'-H) in natural silica under repeated 266nm UV irradiations performed by a Nd:YAG pulsed laser. UV photons temporarily destroy these paramagnetic defects, their reduction being complete within 250 pulses. After re-irradiation, H(II) centers grow again, and the observed recovery kinetics depends on the irradiation dose; multiple 2000 pulses re-irradiations induce the same post-irradiation kinetics of H(II) centers after each exposure cycle. The analysis of these effects allows us to achieve a deeper understanding of the dynamics of the centers during and after laser irradiation.
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Submitted 22 October, 2004;
originally announced October 2004.
