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Picosecond lifetimes of hydrogen bonds in the halide perovskite CH$_3$NH$_3$PbBr$_3$
Authors:
Alejandro Garrote-Márquez,
Lucas Lodeiro,
Norge Cruz Hernández,
Xia Liang,
Aron Walsh,
Eduardo Menéndez-Proupin
Abstract:
The structures and properties of organic-inorganic perovskites are influenced by the hydrogen bonding between the organic cations and the inorganic octahedral networks. This study explores the dynamics of hydrogen bonds in CH$_3$NH$_3$PbBr$_3$ across a temperature range from 70 K to 350 K, using molecular dynamics simulations with machine-learning force fields. The results indicate that the lifeti…
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The structures and properties of organic-inorganic perovskites are influenced by the hydrogen bonding between the organic cations and the inorganic octahedral networks. This study explores the dynamics of hydrogen bonds in CH$_3$NH$_3$PbBr$_3$ across a temperature range from 70 K to 350 K, using molecular dynamics simulations with machine-learning force fields. The results indicate that the lifetime of hydrogen bonds decreases with increasing temperature from 7.6 ps (70 K) to 0.16 ps (350 K), exhibiting Arrhenius-type behaviour. The geometric conditions for hydrogen bonding, which include bond lengths and angles, maintain consistency across the full temperature range. The relevance of hydrogen bonds for the vibrational states of the material is also evidenced through a detailed analysis of the vibrational power spectra, demonstrating their significant effect on the physical properties for this class of perovskites.
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Submitted 3 July, 2024;
originally announced July 2024.
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Hydrogen bonds in lead halide perovskites: insights from ab initio molecular dynamics
Authors:
Alejandro Garrote-Márquez,
Lucas Lodeiro,
Rahul Suresh,
Norge Cruz Hernández,
Ricardo Grau-Crespo,
Eduardo Menéndez-Proupin
Abstract:
Hydrogen bonds (HBs) play an important role in the rotational dynamics of organic cations in hybrid organic/inorganic halide perovskites, affecting the structural and electronic properties of the perovskites. However, the properties and even the existence of HBs in these perovskites are not well established. We investigate HBs in perovskites MAPbBr$_3$ (MA$^+$=CH$_3$NH$_3^+$), FAPbI$_3$ (FA$^+$= C…
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Hydrogen bonds (HBs) play an important role in the rotational dynamics of organic cations in hybrid organic/inorganic halide perovskites, affecting the structural and electronic properties of the perovskites. However, the properties and even the existence of HBs in these perovskites are not well established. We investigate HBs in perovskites MAPbBr$_3$ (MA$^+$=CH$_3$NH$_3^+$), FAPbI$_3$ (FA$^+$= CH(NH$_2$)$_2^+$), and their solid solution (FAPbI$_3$)$_{7/8}$(MAPbBr$_3$)$_{1/8}$, using ab initio molecular dynamics and electronic structure calculations. We consider HBs donated by X-H fragments (X=N, C) of the organic cations and accepted by the halides (Y=Br, I), and characterize their properties based on pair distribution functions and on a combined distribution function of hydrogen-acceptor distance with donor-hydrogen-acceptor angle. By analyzing these functions, we establish geometric criteria for HB existence based on hydrogen-acceptor distance $d(H-Y)$ and donor-hydrogen-acceptor angle $\measuredangle(X-H-Y)$. The distance condition is defined as $d(H-Y)<0.3$ nm, for N-H-donated HBs, and $d(H-Y)<0.4$ nm for C-H-donated HBs. The angular condition is $135{^\circ}\le\measuredangle(X-H-Y)\le 180{^\circ}$ for both types of HBs. At the simulated temperature (350 K), the HBs dynamically break and form. We compute time correlation functions of HB existence and HB lifetimes, which range between 0.1 and 0.3 picoseconds at that temperature. The analysis of HB lifetimes indicates that N-H--Br bonds are relatively stronger than N-H--I bonds, while C-H--Y bonds are weaker. To evaluate the impact of HBs on vibrational spectra, we present the power spectra, showing that peaks associated with N-H stretching modes in perovskites are redshifted and asymmetrically deformed compared with the peaks of isolated cations.
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Submitted 29 March, 2023;
originally announced March 2023.
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Mixed-anion mixed-cation perovskite (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$: an ab-initio molecular dynamics study
Authors:
Eduardo Menéndez-Proupin,
Shivani Grover,
Ana L. Montero-Alejo,
Scott D. Midgley,
Keith T. Butler,
Ricardo Grau-Crespo
Abstract:
Mixed-anion mixed-cation perovskites with (FAPbI$_3$)$_{1-x}$(MAPbBr$_3$)$_x$ composition have allowed record efficiencies in photovoltaic solar cells, but their atomic-scale behaviour is not well understood yet, in part because their theoretical modelling requires consideration of complex and interrelated dynamic and disordering effects. We present here an ab initio molecular dynamics investigati…
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Mixed-anion mixed-cation perovskites with (FAPbI$_3$)$_{1-x}$(MAPbBr$_3$)$_x$ composition have allowed record efficiencies in photovoltaic solar cells, but their atomic-scale behaviour is not well understood yet, in part because their theoretical modelling requires consideration of complex and interrelated dynamic and disordering effects. We present here an ab initio molecular dynamics investigation of the structural, thermodynamic, and electronic properties of the (FAPbI$_3$)$_{0.875}$(MAPbBr$_3$)$_{0.125}$ perovskite. A special quasi-random structure is proposed to mimic the disorder of both the molecular cations and the halide anions, in a stoichiometry that is close to that of one of today's most efficient perovskite solar cells. We show that the rotation of the organic cations is more strongly hindered in the mixed structure in comparison with the pure compounds. Our analysis suggests that this mixed perovskite is thermodynamically stable against phase separation despite the endothermic mixing enthalpy, due to the large configurational entropy. The electronic properties are investigated by hybrid density functional calculations including spin-orbit coupling in carefully selected representative configurations extracted from the molecular dynamics. Our model, that is validated here against experimental information, provides a more sophisticated understanding of the interplay between dynamic and disordering effects in this important family of photovoltaic materials.
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Submitted 17 December, 2021;
originally announced December 2021.
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Phenomenological model for long wavelength optical modes in transition-metal dichalcogenide monolayer
Authors:
C. Trallero-Giner,
E. Menéndez-Proupin,
E. Suárez Morell,
R. Pérez-Alvarez,
Darío G. Santiago-Pérez
Abstract:
Transition metal dichalcogenides (TMDs) are an exciting family of 2D materials; a member of this family, MoS$_2$, became the first measured monolayer semiconductor. In this article, a generalized phenomenological continuum model for the optical vibrations of the monolayer TMDs valid in the long-wavelength limit is developed. Non-polar oscillations involve differential equations for the phonon disp…
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Transition metal dichalcogenides (TMDs) are an exciting family of 2D materials; a member of this family, MoS$_2$, became the first measured monolayer semiconductor. In this article, a generalized phenomenological continuum model for the optical vibrations of the monolayer TMDs valid in the long-wavelength limit is developed. Non-polar oscillations involve differential equations for the phonon displacement vector that describe phonon dispersion up to a quadratic approximation. On the other hand, the polar modes satisfy coupled differential equations for the displacement vectors and the inner electric field. The two-dimensional phonon dispersion curves for in-plane and out-of-plane oscillations are thoroughly analyzed. This model provides an efficient approach to obtain the phonon dispersion curves at the $Γ$-point of the Brillouin zone of the whole family of TMD monolayers. The model parameters are fitted from density functional perturbation theory calculations. A detailed evaluation of the intravalley Pekar-Fröhlich (P-F) and the $A_1$-homopolar mode deformation potential (Dp) coupling mechanisms is performed. The effects of metal ions and chalcogen atoms on polaron mass and binding energy are studied, considering these two contributions, the short-range Dp and P-F. It is argued that both mechanisms must be considered for a correct analysis of the polaron properties.
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Submitted 10 April, 2021; v1 submitted 27 March, 2021;
originally announced March 2021.
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Atomic scale model and electronic structure of Cu$_2$O/CH$_3$NH$_3$PbI$_3$ interfaces in perovskite solar cells
Authors:
Jesús E. Castellanos-Águila,
Lucas Lodeiro,
Eduardo Menéndez-Proupin,
Ana L. Montero-Alejo,
Pablo Palacios,
José C. Conesa,
Perla Wahnón
Abstract:
Cuprous oxide has been conceived as a potential alternative to traditional organic hole transport layers in hybrid halide perovskite-based solar cells. Device simulations predict record efficiencies using this semiconductor, but experimental results do not yet show this trend. More detailed knowledge about the Cu$_2$O/perovskite interface is mandatory to improve the photoconversion efficiency. Usi…
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Cuprous oxide has been conceived as a potential alternative to traditional organic hole transport layers in hybrid halide perovskite-based solar cells. Device simulations predict record efficiencies using this semiconductor, but experimental results do not yet show this trend. More detailed knowledge about the Cu$_2$O/perovskite interface is mandatory to improve the photoconversion efficiency. Using density functional theory calculations, here we study the interfaces of CH$_3$NH$_3$PbI$_3$ with Cu$_2$O to assess their influence on device performance. Several atomistic models of these interfaces are provided for the first time, considering different compositions of the interface atomic planes. The interface electronic properties are discussed on the basis of the optimal theoretical situation, but in connection with the experimental realizations and device simulations. It is shown that the formation of vacancies in the Cu$_2$O terminating planes is essential to eliminate dangling bonds and trap states. The four interface models that fulfill this condition present a band alignment favorable for photovoltaic conversion. Energy of adhesion, and charge transfer across the interfaces are also studied. The termination of CH$_3$NH$_3$PbI$_3$ in PbI$_2$ atomic planes seems optimal to maximize the photoconversion efficiency.
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Submitted 24 September, 2020; v1 submitted 26 June, 2020;
originally announced June 2020.
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On the accuracy of the HSE hybrid functional to describe many-electron interactions and charge localization in semiconductors
Authors:
Mauricio A. Flores,
Walter Orellana,
Eduardo Menéndez-Proupin
Abstract:
Hybrid functionals, which mix a fraction of Hartree-Fock (HF) exchange with local or semilocal exchange, have become increasingly popular in quantum chemistry and computational materials science. Here, we assess the accuracy of the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional to describe many-electron interactions and charge localization in semiconductors. We perform diffusion quantum Monte Car…
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Hybrid functionals, which mix a fraction of Hartree-Fock (HF) exchange with local or semilocal exchange, have become increasingly popular in quantum chemistry and computational materials science. Here, we assess the accuracy of the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional to describe many-electron interactions and charge localization in semiconductors. We perform diffusion quantum Monte Carlo (DMC) calculations to obtain the accurate ground-state spin densities of the negatively charged (SiV)$^-$ and the neutral (SiV)$^0$ silicon-vacancy center in diamond, and of the cubic silicon carbide (3C-SiC) with an extra electron. We compare our DMC results with those obtained with the HSE functional and find a good agreement between both methods for (SiV)$^-$ and (SiV)$^0$, whereas the correct description of 3C-SiC with an extra electron crucially depends on the amount of HF exchange included in the functional. Also, we examine the case of the neutral Cd vacancy in CdTe, for which we assess the performance of HSE against the many-body \emph{GW} approximation for the description of the position of the defect states in the band gap.
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Submitted 28 September, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
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Self-compensation in phosphorus-doped CdTe
Authors:
Mauricio A. Flores,
Walter Orellana,
Eduardo Menéndez-Proupin
Abstract:
We investigate the self-compensation mechanism in phosphorus-doped CdTe. The formation energies, charge transition levels, and defects states of several P-related point defects susceptible to cause self-compensation are addressed by first-principles calculations. Moreover, we assess the in uence of the spin-orbit coupling and supercell-size effects on the stability of AX centers donors, which are…
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We investigate the self-compensation mechanism in phosphorus-doped CdTe. The formation energies, charge transition levels, and defects states of several P-related point defects susceptible to cause self-compensation are addressed by first-principles calculations. Moreover, we assess the in uence of the spin-orbit coupling and supercell-size effects on the stability of AX centers donors, which are believed to be responsible for most of the self-compensation. We report an improved result for the lowest-energy configuration of the P interstitial (P$_\text{i}$) and find that the self-compensation mechanism is not due to the formation of AX centers. Under Te-rich growth conditions, (P$_\text{i}$) exhibits a formation energy lower than the substitutional acceptor (P$_\text{Te}$) when the Fermi level is near the valence band, acting as compensating donor. While, for Cd-rich growth conditions, our results suggest that p-type doping is limited by the formation of (P$_\text{Te}$-V$_\text{Te}$) complexes.
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Submitted 5 October, 2017; v1 submitted 6 August, 2017;
originally announced August 2017.
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First-principles DFT + GW study of the Te antisite in CdTe
Authors:
Mauricio A. Flores,
Eduardo Menéndez-Proupin,
Walter Orellana
Abstract:
Formation energies, charge transitions levels, and quasiparticle defect states of the tellurium antisite $(\text{Te}_\text{Cd})$ in CdTe are addressed within the DFT${0.05cm}+{0.05cm}$\emph{GW} formalism. We find that $(\text{Te}_\text{Cd})$ induces a (+2/0) deep level at 0.99 eV above the valence band maximum, exhibiting a negative-U effect. Moreover, the calculated zero-phonon line for the excit…
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Formation energies, charge transitions levels, and quasiparticle defect states of the tellurium antisite $(\text{Te}_\text{Cd})$ in CdTe are addressed within the DFT${0.05cm}+{0.05cm}$\emph{GW} formalism. We find that $(\text{Te}_\text{Cd})$ induces a (+2/0) deep level at 0.99 eV above the valence band maximum, exhibiting a negative-U effect. Moreover, the calculated zero-phonon line for the excited state of $(\text{Te}_\text{Cd})^0$ corresponds closely with the $\sim$1.1 eV band, visible in luminescence and absorption experiments. Our results differ from previous theoretical studies, mainly due to the well-known band gap error and the incorrect position of the band edges predicted by standard DFT calculations.
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Submitted 21 July, 2016;
originally announced July 2016.
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Non-hydrogenic excitons in perovskite CH$_3$NH$_3$PbI$_3$
Authors:
E. Menéndez-Proupin,
Carlos L. Beltrán Ríos,
P. Wahnón
Abstract:
The excitons in the orthorhombic phase of the perovskite CH$_3$NH$_3$PbI$_3$ are studied using the effective mass approximation. The electron-hole interaction is screened by a distance-dependent dielectric function, as described by the Haken potential or the Pollmann-Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The effective masses, the low and high…
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The excitons in the orthorhombic phase of the perovskite CH$_3$NH$_3$PbI$_3$ are studied using the effective mass approximation. The electron-hole interaction is screened by a distance-dependent dielectric function, as described by the Haken potential or the Pollmann-Büttner potential. The energy spectrum and the eigenfunctions are calculated for both cases. The effective masses, the low and high frequency dielectric constants, and the interband absorption matrix elements, are obtained from generalized density functional theory calculations. The results show that the Pollmann-Büttner model provides better agreement with the experimental results. The discrete part of the exciton spectrum is composed of a fundamental state with a binding energy of 24 meV, and higher states that are within 2 meV from the onset the unbound exciton continuum. Light absorption is dominated by the fundamental line with an oscillator strength of 0.013, followed by the exciton continuum. The calculations have been performed without fitting any parameter from experiments and are in close agreement with recent experimental results.
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Submitted 1 July, 2015;
originally announced July 2015.
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Tellurium vacancy in cadmium telluride revisited: size effects in the electronic properties
Authors:
E. Menéndez-Proupin,
W. Orellana
Abstract:
The quantum states and thermodynamical properties of the Te vacancy in CdTe are addressed by first principles calculations, including the supercell size and quasiparticle corrections. It is shown that the 64-atoms supercell calculation is not suitable to model the band structure of the isolated Te vacancy. This problem can be solved with a larger 216-atoms supercell, where the band structure of th…
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The quantum states and thermodynamical properties of the Te vacancy in CdTe are addressed by first principles calculations, including the supercell size and quasiparticle corrections. It is shown that the 64-atoms supercell calculation is not suitable to model the band structure of the isolated Te vacancy. This problem can be solved with a larger 216-atoms supercell, where the band structure of the defect seems to be a perturbation of that of the perfect crystal. It is interesting to note that the Te-vacancy formation energy calculated with both supercell sizes are close in energy, which is attributed to error cancelation. We also show that the interplay between supercell size effects and the band gap underestimation of the generalized gradient approximation strongly influences the predicted symmetry of some charge states.
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Submitted 25 May, 2015;
originally announced May 2015.
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Electronic and atomic structure of complex defects in highly n-type doped ZnO films
Authors:
E. Menéndez-Proupin,
P. Palacios,
P. Wahnón
Abstract:
Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopical behavior of both systems. Substitutional doping in Ga-ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutio…
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Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopical behavior of both systems. Substitutional doping in Ga-ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al-ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator o the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results are compared with photoelectron spectra for Ga-ZnO and Al-ZnO at the corresponding doping levels.
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Submitted 25 November, 2013;
originally announced November 2013.
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A Proposal for a Modified Moller-Plesset Perturbation Theory
Authors:
Alejandro Cabo,
Francisco Claro,
Eduardo Menendez-Proupin
Abstract:
A modified version of the Moller-Plesset approach for obtaining the correlation energy associated to a Hartree-Fock ground state is proposed. The method is tested in a model of interacting fermions that allows for an exact solution. Using up to third order terms improved results are obtained, even more accurate in the limit of loosely bound particles. This result suggests the possible convenienc…
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A modified version of the Moller-Plesset approach for obtaining the correlation energy associated to a Hartree-Fock ground state is proposed. The method is tested in a model of interacting fermions that allows for an exact solution. Using up to third order terms improved results are obtained, even more accurate in the limit of loosely bound particles. This result suggests the possible convenience of the scheme for the study of chemical bound problems.
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Submitted 24 October, 2004;
originally announced October 2004.
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Resonance Raman scattering in semiconductor quantum dots: Adiabatic vs. time-dependent perturbation theory
Authors:
E. Menendez-Proupin,
Nana Cabo-Bisset
Abstract:
The adiabatic theory of resonance one-phonon Raman scattering in semiconductor nanocrystals is revised and extended with perturbative non-adiabatic corrections, given by the Albrecht's B term. This theory is confronted with the time-dependent perturbation approach, pointing at their differences and similarities. It is shown that both theories are equivalent in the limit of weak electron-phonon c…
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The adiabatic theory of resonance one-phonon Raman scattering in semiconductor nanocrystals is revised and extended with perturbative non-adiabatic corrections, given by the Albrecht's B term. This theory is confronted with the time-dependent perturbation approach, pointing at their differences and similarities. It is shown that both theories are equivalent in the limit of weak electron-phonon coupling and non-degenerate or uncoupled resonant states. Evaluations of the A and B terms for the confined LO phonon in CdSe and CdS nanocrystals are reported. These evaluations show that the B term can usually be neglected.
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Submitted 26 April, 2002;
originally announced April 2002.
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Comment on "Multi-phonon Raman scattering in semiconductor nanocrystals: Importance of non-adiabatic transitions"
Authors:
Eduardo Menendez-Proupin
Abstract:
In a recent paper [E. P. Pokatilov et al, PRB 65, 075316 (2002) the Raman selection rules in spherical nanocrystals with a degenerate valence band are analyzed. Some precisions are given here.
In a recent paper [E. P. Pokatilov et al, PRB 65, 075316 (2002) the Raman selection rules in spherical nanocrystals with a degenerate valence band are analyzed. Some precisions are given here.
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Submitted 23 April, 2002;
originally announced April 2002.
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Resonant Raman scattering off neutral quantum dots
Authors:
Alain Delgado,
Augusto Gonzalez,
Eduardo Menendez-Proupin
Abstract:
Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or…
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Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate states.
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Submitted 16 January, 2002;
originally announced January 2002.
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Interband absorption and luminescence in small quantum dots under strong magnetic fields
Authors:
Augusto Gonzalez,
Eduardo Menendez-Proupin
Abstract:
Interband absorption and luminescence of quasi-two-dimensional, circularly symmetric, N_e electron quantum dots are studied at high magnetic fields, 8<B<60 T, and low temperatures, T<<2 K. In the N_e=0 and 1 dots, the initial and final states of such processes are fixed, and thus the dependence on B of peak intensities is monotonic. For larger systems, ground state rearrangements with varying ma…
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Interband absorption and luminescence of quasi-two-dimensional, circularly symmetric, N_e electron quantum dots are studied at high magnetic fields, 8<B<60 T, and low temperatures, T<<2 K. In the N_e=0 and 1 dots, the initial and final states of such processes are fixed, and thus the dependence on B of peak intensities is monotonic. For larger systems, ground state rearrangements with varying magnetic field lead to substantial modifications of the absorption and luminescence spectra. Collective effects are seen in the N_e=2 and 3 dots at "filling factors" 1/2, 1/3 and 1/5.
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Submitted 10 May, 2000;
originally announced May 2000.
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Resonant hyper-Raman scattering in spherical quantum dots
Authors:
E. Menendez-Proupin,
C. Trallero-Giner,
A. Garcia-Cristobal
Abstract:
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with…
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A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with the help of a continuum model satisfying both the mechanical and electrostatic matching conditions at the interface. An explicit expression for the hyper-Raman scattering efficiency is derived, which is valid for incident two-photon energy close to the exciton resonances. The dipole selection rules for optical transitions and Fröhlich-like exciton-lattice interaction are derived: It is shown that only exciton states with total angular momentum $L=0,1$ and vibrational modes with angular momentum $l_p=1$ contribute to the hyper-Raman scattering process. The associated exciton energies, wavefunctions, and vibron frequencies have been obtained for spherical CdSe zincblende-type nanocrystals, and the corresponding hyper-Raman scattering spectrum and resonance profile are calculated. Their dependence on the dot radius and the influence of the size distribution on them are also discussed.
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Submitted 4 November, 1998;
originally announced November 1998.
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Exciton and confinement potential effects on the resonant Raman scattering in quantum dots
Authors:
E. Menendez-Proupin,
J. L. Pena,
C. Trallero-Giner
Abstract:
Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in…
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Resonant Raman scattering in semiconductor quantum dots with spherical shape is theoretically investigated. The Frohlich-like interaction between electronic states and optical vibrations has been considered. The Raman profiles are studied for the following intermediate electronic state models: (I) Uncorrelated electron-hole pairs in the strong size quantized regime, (II) Wannier-Mott excitons in an infinite potential well, and (III) Excitons in a finite confinement barrier. It is shown that the finite confinement barrier height and the electron-hole correlation determine the absolutes values of the scattering intensities and substantially modify the Raman line shape, even in the strong confinement regime.
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Submitted 5 August, 1998;
originally announced August 1998.
