Showing 1–21 of 21 results for author: Melnikov, M

Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system

Authors: M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of electron solid formation at low densities, are not observed in the quan… ▽ More We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of electron solid formation at low densities, are not observed in the quantum Hall regime, which does not confirm the existence of a quasi-particle quantum Hall Wigner solid and indicates that quasi-particles near integer filling do not form an independent subsystem. △ Less

Submitted 3 April, 2025; originally announced April 2025.

Comments: arXiv admin note: substantial text overlap with arXiv:2409.06686

Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields

Authors: M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicula… ▽ More We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid. △ Less

Submitted 7 February, 2025; v1 submitted 10 September, 2024; originally announced September 2024.

Comments: As published

Journal ref: Phys. Rev. B 111, L041301 (2025)

Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapping independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly… ▽ More We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of three overlapping independent gates deposited on top of the structure and allows transport measurements to be performed at millikelvin temperatures in the strongly interacting limit at low electron densities, where the energy of the electron-electron interactions dominates all other energy scales. This design allows one to observe the two-threshold voltage-current characteristics that are a signature for the collective depinning and sliding of the electron solid. △ Less

Submitted 3 October, 2024; v1 submitted 28 May, 2024; originally announced May 2024.

Journal ref: Appl. Phys. Lett. 125, 153102 (2024)

Collective depinning and sliding of a quantum Wigner solid in a 2D electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, wh… ▽ More We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility SiGe/Si/SiGe heterostructures. The observed results can be described by a phenomenological theory of the collective depinning of elastic structures, which naturally generates a peak of a broadband current noise between the dynamic and static thresholds and changes to sliding of the solid over a pinning barrier above the static threshold. This gives compelling evidence for the electron solid formation in this electron system and shows the generality of the effect for different classes of electron systems. △ Less

Submitted 19 January, 2024; v1 submitted 4 October, 2023; originally announced October 2023.

Comments: As published

Journal ref: Phys. Rev. B 109, L041114 (2024)

Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related… ▽ More The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons' spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories. △ Less

Submitted 12 October, 2023; v1 submitted 9 April, 2023; originally announced April 2023.

Journal ref: Sci. Rep. 13, 17364 (2023)

Band Flattening and Landau Level Merging in Strongly-Correlated Two-Dimensional Electron Systems

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. V. Kravchenko

Abstract: We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/SiGe quantum wells, the effective electron mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-… ▽ More We review recent experimental results indicating the band flattening and Landau level merging at the chemical potential in strongly-correlated two-dimensional (2D) electron systems. In ultra-clean, strongly interacting 2D electron system in SiGe/Si/SiGe quantum wells, the effective electron mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behavior of the two masses reveals a precursor to the interaction-induced single-particle spectrum flattening at the chemical potential in this electron system, in which case the fermion "condensation" at the Fermi level occurs in a range of momenta, unlike the condensation of bosons. In strong magnetic fields, perpendicular to the 2D electron layer, a similar effect of different fillings of quantum levels at the chemical potential -- the merging of the spin- and valley-split Landau levels at the chemical potential -- is observed in Si inversion layers and bilayer 2D electron system in GaAs. Indication of merging of the quantum levels of composite fermions with different valley indices is also reported in ultra-clean SiGe/Si/SiGe quantum wells. △ Less

Submitted 11 August, 2022; v1 submitted 26 April, 2022; originally announced April 2022.

Comments: Minor typos corrected. As published

Journal ref: JETP Lett. 116, 156 (2022)

Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, Amy Y. X. Zhu, S. V. Kravchenko

Abstract: The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is… ▽ More The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature $T_{\text{max}}$, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value $T_{\text{max}}$ decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of $T_{\text{max}}$ cannot be described by existing theories. The results indicate the spin-related origin of the effect. △ Less

Submitted 24 March, 2022; v1 submitted 10 June, 2021; originally announced June 2021.

Comments: As published

Journal ref: Sci. Rep. 12, 5080 (2022)

Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densitie… ▽ More We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at $p=3$ disappear below a certain electron density, although the surrounding minima at $p=2$ and $p=4$ survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor $ν=3/5$ is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection or merging of the quantum levels of composite fermions with different valley indices, which reveals the valley effect on fractions. △ Less

Submitted 14 April, 2021; v1 submitted 14 January, 2021; originally announced January 2021.

Comments: As published

Journal ref: Phys. Rev. B 103, 161302 (2021)

Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells

Authors: A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. Radonjić, V. Dobrosavljević, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of… ▽ More We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities. △ Less

Submitted 26 August, 2020; v1 submitted 30 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 081119(R) (2020)

Metallic state in a strongly interacting spinless two-valley electron system in two dimensions

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko

Abstract: We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, st… ▽ More We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the electron system "spinless". It occurs that the metallic temperature dependence of the resistivity, although weaker than that in the absence of magnetic field, still remains strong even when the spin degree of freedom is removed. Several independent methods have been used to establish the existence of the genuine MIT in the spinless two-valley 2D system. This is in contrast to the previous results obtained on more disordered silicon samples, where the polarizing magnetic field causes a complete quench of the metallic temperature behavior. △ Less

Submitted 14 January, 2020; v1 submitted 23 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. B 101, 045302 (2020)

Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density,… ▽ More The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on lower-mobility samples, in ultra-high mobility SiGe/Si/SiGe quantum wells the critical electron density, $n_{\text{c}}$, of the MIT becomes smaller than the density, $n_{\text{m}}$, where the effective mass at the Fermi level tends to diverge. Near the topological phase transition expected at $n_{\text{m}}$, the metallic temperature dependence of the resistance should be strengthened, which is consistent with the experimental observation of more than an order of magnitude resistance drop with decreasing temperature below $\sim1$ K. △ Less

Submitted 5 February, 2019; v1 submitted 29 August, 2018; originally announced August 2018.

Comments: Misprints corrected. As published

Journal ref: Phys. Rev. B 99, 081106(R) (2019); Erratum: Phys. Rev. B 107, 039902 (2023)

Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields

Authors: V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3,… ▽ More We have experimentally studied the fractional quantum Hall effect (FQHE) in SiGe/Si/SiGe quantum wells in relatively weak magnetic fields, where the Coulomb interaction between electrons exceeds the cyclotron splitting by a factor of a few XX. Minima of the longitudinal resistance have been observed corresponding to the quantum Hall effect of composite fermions with quantum numbers $p$ = 1, 2, 3, and 4. Minima with $p$ = 3 disappear in magnetic fields below 7 Tesla, which may be a consequence of the intersection or even merging of the quantum levels of the composite fermions with different orientations of the pseudo-spin, i.e., those belonging to different valleys. We have also observed minima of the longitudinal resistance at filling factors $ν$ = 4/5 and 4/11, which may be due to the formation of the second generation of the composite fermions. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: JETP Lett. 107, 794 (2018)

Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, G. Biasiol, S. Roddaro, L. Sorba

Abstract: We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calcul… ▽ More We observe an unusual behavior of the low-temperature magnetoresistance of the high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wells in weak perpendicular magnetic fields. The observed magnetoresistance is qualitatively similar to that expected for the weak localization and anti-localization but its quantity exceeds significantly the scale of the quantum corrections. The calculations show that the obtained data can be explained by the classical effects in electron motion along the open orbits in a quasiperiodic potential relief manifested by the presence of ridges on the quantum well surface. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Journal ref: JETP Letters 107, 320 (2018)

Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and cr… ▽ More We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the crystallographic axes of the sample and is a consequence of the intrinsic ridges on the quantum well surface. For the simplest orientations between current and crystallographic axes, a method of recalculating the magnetoresistance measured at $I\perp B_\parallel$ into the one measured at $I\parallel B_\parallel$ is suggested and is shown to yield results that agree with the experiment. △ Less

Submitted 8 December, 2017; v1 submitted 21 June, 2017; originally announced June 2017.

Comments: As published

Journal ref: J. Appl. Phys. 122, 224301 (2017)

Indication of band flattening at the Fermi level in a strongly correlated electron system

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the… ▽ More Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values are qualitatively different. With decreasing electron density (or increasing interaction strength), the mass at the Fermi level monotonically increases in the entire range of electron densities, while the energy-averaged mass saturates at low densities. The qualitatively different behaviour reveals a precursor to the interaction-induced single-particle spectrum flattening at the Fermi level in this electron system. △ Less

Submitted 7 November, 2017; v1 submitted 28 April, 2016; originally announced April 2016.

Journal ref: Scientific Reports 7, 14539 (2017)

Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. -H. Huang, C. W. Liu, S. V. Kravchenko

Abstract: We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobili… ▽ More We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential. △ Less

Submitted 5 March, 2015; v1 submitted 22 October, 2014; originally announced October 2014.

Comments: as published. arXiv admin note: substantial text overlap with arXiv:1409.2712

Journal ref: Appl. Phys. Lett. 106, 092102 (2015)

The effective electron mass in high-mobility SiGe/Si/SiGe quantum wells

Authors: M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S. -H. Huang, C. W. Liu

Abstract: The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0… ▽ More The effective mass, m*, of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n_s, the effective mass has been found to grow with decreasing n_s, obeying the relation m*/m_b=n_s/(n_s-n_c), where m_b is the electron band mass and n_c~0.54*10^11 cm^-2. In samples with maximum mobilities ranging between 90 and 220 m^2/Vs, the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples. △ Less

Submitted 9 September, 2014; originally announced September 2014.

Journal ref: JETP Lett. 100, 114 (2014)

Nonlinear transport and noise thermometry in quasi-classical ballistic point contacts

Authors: E. S. Tikhonov, M. Yu. Melnikov, D. V. Shovkun, L. Sorba, G. Biasiol, V. S. Khrapai

Abstract: We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system.… ▽ More We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system. This commonly accepted scenario breaks down at increasing $V$, where we observe extra noise accompanied by a strong decrease of the PC's differential resistance. The spectral density of the extra noise is roughly proportional to the nonlinear current contribution in the PC $δS\approx2F^*|eδI|\sim V^2$ with the effective Fano factor $F^*<1$, indicating that a random scattering process is involved. A small perpendicular magnetic field is found to suppress both $δI$ and $δS$. Our observations are consistent with a concept of a drag-like mechanism of the nonlinear transport mediated by electron-electron scattering in the leads of quasi-classical PCs. △ Less

Submitted 9 October, 2014; v1 submitted 10 June, 2014; originally announced June 2014.

Comments: to appear in PRB

Journal ref: Physical Review B 90, 161405(R) (2014)

Influence of e-e scattering on the temperature dependence of the resistance of a classical ballistic point contact in a two-dimensional electron system

Authors: M. Yu. Melnikov, J. P. Kotthaus, V. Pellegrini, L. Sorba, G. Biasiol, V. S. Khrapai

Abstract: We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly lin… ▽ More We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution dR. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies dR(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)]. △ Less

Submitted 22 August, 2012; v1 submitted 14 February, 2012; originally announced February 2012.

Comments: as published

Journal ref: Phys. Rev. B 86, 075425 (2012)

Manifestation of the bulk phase transition in the edge energy spectrum in a two dimensional bilayer electron system

Authors: E. V. Deviatov, A. Wurtz, A. Lorke, M. Yu. Melnikov, V. T. Dolgopolov, A. Wixforth, K. L. Campman, A. C. Gossard

Abstract: We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $ν=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk ph… ▽ More We use a quasi-Corbino sample geometry with independent contacts to different edge states in the quantum Hall effect regime to investigate the edge energy spectrum of a bilayer electron system at total filling factor $ν=2$. By analyzing non-linear $I-V$ curves in normal and tilted magnetic fields we conclude that the edge energy spectrum is in a close connection with the bulk one. At the bulk phase transition spin-singlet - canted antiferromagnetic phase $I-V$ curve becomes to be linear, indicating the disappearance or strong narrowing of the $ν=1$ incompressible strip at the edge of the sample. △ Less

Submitted 16 February, 2004; originally announced February 2004.

Comments: 5 pages, 5 figures

Journal ref: Jetp Letters, vol 79, i. 4, page 206 (2004)

Observation of two relaxation mechanisms in transport between spin split edge states at high imbalance

Authors: E. V. Deviatov, A. Wurtz, A. Lorke, M. Yu. Melnikov, V. T. Dolgopolov, D. Reuter, A. D. Wieck

Abstract: Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the prese… ▽ More Using a quasi-Corbino geometry to directly study electron transport between spin-split edge states, we find a pronounced hysteresis in the I-V curves, originating from slow relaxation processes. We attribute this long-time relaxation to the formation of a dynamic nuclear polarization near the sample edge. The determined characteristic relaxation times are 25 s and 200 s which points to the presence of two different relaxation mechanisms. The two time constants are ascribed to the formation of a local nuclear polarization due to flip-flop processes and the diffusion of nuclear spins. △ Less

Submitted 24 March, 2003; originally announced March 2003.

Comments: Submitted to PRB