Showing 1–9 of 9 results for author: Meister, S

A route for the top-down fabrication of ordered ultrathin GaN nanowires

Authors: Miriam Oliva, Vladimir Kaganer, Maximilian Pudelski, Sebastian Meister, Abbes Tahraoui, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle

Abstract: Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, f… ▽ More Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, followed by dry etching and wet etching in hot KOH. The SiN$_x$ is found to work as an etch stop during wet etching in hot KOH. Arrays with NW diameters down to $(33 \pm5)\,$nm can be achieved with a yield exceeding $99.9\,\%$. Further reduction of the NW diameter down to $5\,$nm is obtained by applying digital etching which consists in plasma oxidation followed by wet etching in hot KOH. The NW radial etching depth is tuned by varying the RF power during plasma oxidation. NW breaking or bundling is observed for diameters below $\approx 20\,$nm, an effect that is associated to capillary forces acting on the NWs during sample drying in air. This effect can be principally mitigated using critical point dryers. Interestingly, this mechanical instability of the NWs is found to occur at much smaller aspect ratios than what is predicted for models dealing with macroscopic elastic rods. Explicit calculations of buckling states show an improved agreement when considering an inclined water surface, as can be expected if water assembles into droplets. The proposed fabrication route can be principally applied to any GaN/SiN$_{x}$ nanostructures and allows regrowth after removal of the SiN$_{x}$ mask. △ Less

Submitted 6 November, 2022; originally announced November 2022.

Resonators coupled to voltage-biased Josephson junctions: From linear response to strongly driven nonlinear oscillations

Authors: S. Meister, M. Mecklenburg, V. Gramich, J. T. Stockburger, J. Ankerhold, B. Kubala

Abstract: Motivated by recent experiments, where a voltage biased Josephson junction is placed in series with a resonator, the classical dynamics of the circuit is studied in various domains of parameter space. This problem can be mapped onto the dissipative motion of a single degree of freedom in a nonlinear time-dependent potential, where in contrast to conventional settings the nonlinearity appears in th… ▽ More Motivated by recent experiments, where a voltage biased Josephson junction is placed in series with a resonator, the classical dynamics of the circuit is studied in various domains of parameter space. This problem can be mapped onto the dissipative motion of a single degree of freedom in a nonlinear time-dependent potential, where in contrast to conventional settings the nonlinearity appears in the driving while the static potential is purely harmonic. For long times the system approaches steady states which are analyzed in the underdamped regime over the full range of driving parameters including the fundamental resonance as well as higher and sub-harmonics. Observables such as the dc-Josephson current and the radiated microwave power give direct information about the underlying dynamics covering phenomena as bifurcations, irregular motion, up- and down conversion. Due to their tunability, present and future set-ups provide versatile platforms to explore the changeover from linear response to strongly nonlinear behavior in driven dissipative systems under well defined conditions. △ Less

Submitted 9 November, 2015; v1 submitted 23 June, 2015; originally announced June 2015.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. B 92, 174532 (2015)

Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3

Authors: Desheng Kong, Judy J. Cha, Keji Lai, Hailin Peng, James G. Analytis, Stefan Meister, Yulin Chen, Hai-Jun Zhang, Ian R. Fisher, Zhi-Xun Shen, Yi Cui

Abstract: Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Syste… ▽ More Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphere, thereby reducing the relative contribution of surface states in total conductivity. In this letter, transport measurements on Bi2Se3 nanoribbons provide additional evidence of such environmental doping process. Systematic surface composition analyses by X-ray photoelectron spectroscopy reveal fast formation and continuous growth of native oxide on Bi2Se3 under ambient conditions. In addition to n-type doping at the surface, such surface oxidation is likely the material origin of the degradation of topological surface states. Appropriate surface passivation or encapsulation may be required to probe topological surface states of Bi2Se3 by transport measurements. △ Less

Submitted 18 February, 2011; originally announced February 2011.

Journal ref: ACS Nano 5 (6), 4698-4703 (2011)

Ultra-thin Topological Insulator Bi2Se3 Nanoribbons Exfoliated by Atomic Force Microscopy

Authors: Seung Sae Hong, Worasom Kundhikanjana, Judy J. Cha, Keji Lai, Desheng Kong, Stefan Meister, Michael A. Kelly, Zhi-Xun Shen, Yi Cui

Abstract: Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In thi… ▽ More Ultra-thin topological insulator nanostructures, in which coupling between top and bottom surface states takes place, are of great intellectual and practical importance. Due to the weak Van der Waals interaction between adjacent quintuple layers (QLs), the layered bismuth selenide (Bi2Se3), a single Dirac-cone topological insulator with a large bulk gap, can be exfoliated down to a few QLs. In this paper, we report the first controlled mechanical exfoliation of Bi2Se3 nanoribbons (> 50 QLs) by an atomic force microscope (AFM) tip down to a single QL. Microwave impedance microscopy is employed to map out the local conductivity of such ultra-thin nanoribbons, showing drastic difference in sheet resistance between 1~2 QLs and 4~5 QLs. Transport measurement carried out on an exfoliated (\leq 5 QLs) Bi2Se3 device shows non-metallic temperature dependence of resistance, in sharp contrast to the metallic behavior seen in thick (> 50 QLs) ribbons. These AFM-exfoliated thin nanoribbons afford interesting candidates for studying the transition from quantum spin Hall surface to edge states. △ Less

Submitted 8 July, 2010; originally announced July 2010.

Journal ref: Nano Lett., 2010, 10 (8), pp 3118-3122

Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential

Authors: Desheng Kong, Wenhui Dang, Judy J. Cha, Hui Li, Stefan Meister, Hailin Peng, Zhongfan Liu, Yi Cui

Abstract: Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI materials Bi2Se3, Bi2Te3 and Sb2Te3 are TI with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers… ▽ More Topological insulator (TI) represents an unconventional quantum phase of matter with insulating bulk bandgap and metallic surface states. Recent theoretical calculations and photoemission spectroscopy measurements show that Group V-VI materials Bi2Se3, Bi2Te3 and Sb2Te3 are TI with a single Dirac cone on the surface. These materials have anisotropic, layered structures, in which five atomic layers are covalently bonded to form a quintuple layer, and quintuple layers interact weakly through van der Waals interaction to form the crystal. A few quintuple layers of these materials are predicted to exhibit interesting surface properties. Different from our previous nanoribbon study, here we report the synthesis and characterizations of ultrathin Bi2Te3 and Bi2Se3 nanoplates with thickness down to 3 nm (3 quintuple layers), via catalyst-free vapor-solid (VS) growth mechanism. Optical images reveal thickness-dependant color and contrast for nanoplates grown on oxidized silicon (300nm SiO2/Si). As a new member of TI nanomaterials, ultrathin TI nanoplates have an extremely large surface-to-volume ratio and can be electrically gated more effectively than the bulk form, potentially enhancing surface states effects in transport measurements. Low temperature transport measurements of a single nanoplate device, with a high-k dielectric top gate, show decrease in carrier concentration by several times and large tuning of chemical potential. △ Less

Submitted 11 April, 2010; originally announced April 2010.

Comments: 6 figures

Journal ref: Nano Lett., 2010, 10 (6), pp 2245-2250

Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons

Authors: Judy J. Cha, James R. Williams, Desheng Kong, Stefan Meister, Hailin Peng, Andrew J. Bestwick, Patrick Gallagher, David Goldhaber-Gordon, Yi Cui

Abstract: A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume r… ▽ More A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, which exhibit topologically-protected conducting surface states that reside inside the bulk band gap. Studying topological insulators such as Bi2Se3 in nanostructures is advantageous because of the high surface-to-volume ratio, which enhances effects from the surface states; recently reported Aharonov-Bohm oscillation in topological insulator nanoribbons by some of us is a good example. Theoretically, introducing magnetic impurities in topological insulators is predicted to open a small gap in the surface states by breaking time-reversal symmetry. Here, we present synthesis of magnetically-doped Bi2Se3 nanoribbons by vapor-liquid-solid growth using magnetic metal thin films as catalysts. Although the doping concentration is less than ~ 2%, low-temperature transport measurements of the Fe-doped Bi2Se3 nanoribbon devices show a clear Kondo effect at temperatures below 30 K, confirming the presence of magnetic impurities in the Bi2Se3 nanoribbons. The capability to dope topological insulator nanostructures magnetically opens up exciting opportunities for spintronics. △ Less

Submitted 28 January, 2010; originally announced January 2010.

Comments: 16 pages, 4 figures

Topological Insulator Nanowires and Nanoribbons

Authors: Desheng Kong, Jason C. Randel, Hailin Peng, Judy J. Cha, Stefan Meister, Keji Lai, Yulin Chen, Zhi-Xun Shen, Hari C. Manoharan, Yi Cui

Abstract: Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the… ▽ More Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se3 nanomaterials with a variety of morphologies. The synthesis of Bi2Se3 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ~ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. △ Less

Submitted 26 December, 2009; originally announced December 2009.

Comments: Nano Letters, Article ASAP

Journal ref: Nano Lett., 2010, 10 (1), pp 329-333

Aharonov-Bohm interference in topological insulator nanoribbons

Authors: Hailin Peng, Keji Lai, Desheng Kong, Stefan Meister, Yulin Chen, Xiao-Liang Qi, Shou-Cheng Zhang, Zhi-Xun Shen, Yi Cui

Abstract: Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface an… ▽ More Topological insulators represent novel phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface and verified by angle-resolved photoemission spectroscopy experiments. Here, we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2Se3 nanoribbons. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coverage of two-dimensional electrons on the entire surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation and its temperature dependence demonstrate the robustness of these electronic states. Our results suggest that topological insulator nanoribbons afford novel promising materials for future spintronic devices at room temperature. △ Less

Submitted 23 August, 2009; originally announced August 2009.

Comments: 5 pages, 4 figures, RevTex format

Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy

Authors: Keji Lai, Hailin Peng, Worasom Kundhikanjana, David T. Schoen, Chong Xie, Stefan Meister, Yi Cui, Michael A. Kelly, Zhi-Xun Shen

Abstract: Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors,… ▽ More Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near multiphase boundaries. As vividly demonstrated in complex metal oxides and chalcogenides, these microscopic phases are of great scientific and technological importance for research in high-temperature superconductors, colossal magnetoresistance effect, phase-change memories, and domain switching operations. Direct imaging on dielectric properties of these local phases, however, presents a big challenge for existing scanning probe techniques. Here, we report the observation of electronic inhomogeneity in indium selenide (In2Se3) nanoribbons by near-field scanning microwave impedance microscopy. Multiple phases with local resistivity spanning six orders of magnitude are identified as the coexistence of superlattice, simple hexagonal lattice and amorphous structures with 100nm inhomogeneous length scale, consistent with high-resolution transmission electron microscope studies. The atomic-force-microscope-compatible microwave probe is able to perform quantitative sub-surface electronic study in a noninvasive manner. Finally, the phase change memory function in In2Se3 nanoribbon devices can be locally recorded with big signal of opposite signs. △ Less

Submitted 13 February, 2009; originally announced February 2009.

Comments: 11 pages, 4 figures