Showing 1–50 of 86 results for author: Meier, D

Hybrid antiferroelectric-ferroelectric domain walls in noncollinear antipolar oxides

Authors: Ivan N. Ushakov, Mats Topstad, Muhammad Z. Khalid, Niyorjyoti Sharma, Christoph Grams, Ursula Ludacka, Jiali He, Kasper A. Hunnestad, Mohsen Sadeqi-Moqadam, Julia Glaum, Sverre M. Selbach, Joachim Hemberger, Petra Becker, Ladislav Bohatý, Amit Kumar, Jorge Íñiguez-González, Antonius T. J. van Helvoort, Dennis Meier

Abstract: Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large electromechanical responses. Here, we demonstrate noncollinearity in dipolar order as an additional degree of freedom, unlocking physical properties that are symmetry-forb… ▽ More Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large electromechanical responses. Here, we demonstrate noncollinearity in dipolar order as an additional degree of freedom, unlocking physical properties that are symmetry-forbidden in classical antiferroelectrics. We show that noncollinear order of electric dipole moments in K$_3$[Nb$_3$O$_6$|(BO$_3$)$_2$] leads to a coexistence of antiferroelectric and ferroelectric behaviors. Besides the double-hysteresis loop observed in antiferroelectrics, a pronounced piezoresponse and electrically switchable domains are observed, separated by atomically sharp and micrometer-long charged domain walls. Hybrid antiferroelectric-ferroelectric responses are expected in a wide range of noncollinear systems, giving a new dimension to the research on antiferroelectrics and multifunctional oxides in general. △ Less

Submitted 2 July, 2025; originally announced July 2025.

Domain-wall driven suppression of thermal conductivity in a ferroelectric polycrystal

Authors: Rachid Belrhiti-Nejjar, Manuel Zahn, Patrice Limelette, Max Haas, Lucile Féger, Isabelle Monot-Laffez, Nicolas Horny, Dennis Meier, Fabien Giovannelli, Jan Schultheiß, Guillaume F. Nataf

Abstract: A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control the thermal transport in a wide range of materials, including hard metals, diamond, oxides and 2D systems such as graphene. Here, we report the opposite behavior… ▽ More A common strategy for reducing thermal conductivity of polycrystalline systems is to increase the number of grain boundaries. Indeed, grain boundaries enhance the probability of phonon scattering events, which has been applied to control the thermal transport in a wide range of materials, including hard metals, diamond, oxides and 2D systems such as graphene. Here, we report the opposite behavior in improper ferroelectric ErMnO3 polycrystals, where the thermal conductivity decreases with increasing grain size. We attribute this unusual relationship between heat transport and microstructure to phonon scattering at ferroelectric domain walls. The domain walls are more densely packed in larger grains, leading to an inversion of the classical grain-boundary-dominated transport behavior. Our findings open additional avenues for microstructural engineering of materials for thermoelectric and thermal management applications, enabling simultaneous control over mechanical, electronic, and thermal properties. △ Less

Submitted 22 April, 2025; originally announced April 2025.

Magnetoelectric training of multiferroic domains in Mn$_2$GeO$_4$

Authors: Naëmi Leo, Jonathan S. White, Michel Kenzelmann, Takashi Honda, Tsuyoshi Kimura, Dennis Meier, Manfred Fiebig

Abstract: We study the trilinear magnetoelectric coupling between ferroelectric, ferromagnetic, and antiferromagnetic domains in the spin-spiral multiferroic Mn$_2$GeO$_4$, imaging the evolution of domains under both magnetic and electric fields via optical second harmonic generation. Once activated, this trilinear coupling enables the highly repeatable inversion of an inhomogeneous ferroelectric domain pat… ▽ More We study the trilinear magnetoelectric coupling between ferroelectric, ferromagnetic, and antiferromagnetic domains in the spin-spiral multiferroic Mn$_2$GeO$_4$, imaging the evolution of domains under both magnetic and electric fields via optical second harmonic generation. Once activated, this trilinear coupling enables the highly repeatable inversion of an inhomogeneous ferroelectric domain pattern upon global reversal of the magnetization. We specifically consider the initial domain evolution from zero-field cooling and find that polarization and magnetization domains form independently when entering the multiferroic phase. From here, a field training process is required to obtain the domain inversion mentioned above. We explain this training behavior of the complex magnetoelectric coupling as a pathway from metastable to equilibrium domain patterns, a process relevant to understanding the magnetoelectric behavior in other multiferroic materials with highly interlinked coexisting order parameters. △ Less

Submitted 30 March, 2025; originally announced March 2025.

Comments: 11 pages, 7 figures

Switching on Antiferroelectrics

Authors: G. Catalan, A. Gruverman, J. Íñiguez-González, D. Meier, M. Trassin

Abstract: Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising for applications in energy storage and electrocaloric cooling. However, their defining features (antipolar ground state and double-hysteresis loops) are increasi… ▽ More Antiferroelectrics attract broad attention due to their unusual physical characteristics, chief among which is the double-hysteresis loop that separates their antipolar ground state from the voltage-induced polar phase, which is promising for applications in energy storage and electrocaloric cooling. However, their defining features (antipolar ground state and double-hysteresis loops) are increasingly challenged: materials with non-collinear and/or hybrid polar-antipolar order have been discovered, and double-hysteresis has been realized in materials without a conventional antipolar ground state. These developments add to the intensifying interest in fundamental and practical aspects of antiferroelectrics, and call for a fresh look at antiferroelectricity. In this Perspective, we provide an updated and all-encompassing definition of antiferroelectricity, discuss material systems with new antipolar orders and/or engineered double hysteresis, and reflect on emergent properties and theoretical approaches. This work casts a bird's eye view on the rapidly evolving trends that are shaping up the research on ferroics with antipolar order. △ Less

Submitted 26 March, 2025; originally announced March 2025.

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Authors: Jiali He, Ursula Ludacka, Kasper A. Hunnestad, Didrik R. Småbråten, Konstantin Shapovalov, Per Erik Vullum, Constantinos Hatzoglou, Donald M. Evans, Erik D. Roede, Zewu Yan, Edith Bourret, Sverre M. Selbach, David Gao, Jaakko Akola, Dennis Meier

Abstract: Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orde… ▽ More Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Tailoring MBE Growth of c-Mn3Sn Directly on MgO (111): From Islands to Film

Authors: Longfei He, Ursula Ludacka, Payel Chatterjee, Matthias Hartl, Dennis Meier, Christoph Brüne

Abstract: We present our study of (0001) oriented Mn$_3$Sn (c-Mn$_3$Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn$_3$Sn growth can be controlled through slight adjustments of the Mn flux, achieving either $μ$m$^2$-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction r… ▽ More We present our study of (0001) oriented Mn$_3$Sn (c-Mn$_3$Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn$_3$Sn growth can be controlled through slight adjustments of the Mn flux, achieving either $μ$m$^2$-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction results indicate that both films are highly (0001) oriented. The atomic resolution images show clear film-substrate interfaces displaying an epitaxial relationship. Scanning precession electron diffraction measurements reveal that the island featured sample has highly crystallized Mn$_3$Sn. The sample featuring a high continuity exhibits defects in some areas but retains the dominant Mn$_3$Sn structure. This work demonstrates a potential method for synthesizing high crystalline-quality Mn$_3$Sn films with substantial coverage, facilitating the study of Mn3Sn films without the influence of an additional buffer layer and promoting their application in integrated spintronics. △ Less

Submitted 23 December, 2024; v1 submitted 19 December, 2024; originally announced December 2024.

Strain engineering of magnetic anisotropy in the kagome magnet Fe3Sn2

Authors: D. Kong, A. Kovács, M. Charilaou, M. Altthaler, L. Prodan, V. Tsuran, D. Meier, X. Han, I Kezsmarki, R. E. Dunin-Borkowski

Abstract: The ability to control magnetism with strain offers innovative pathways for the modulation of magnetic domain configurations and for the manipulation of magnetic states in materials on the nanoscale. Although the effect of strain on magnetic domains has been recognized since the early work of C. Kittel, detailed local observations have been elusive. Here, we use mechanical strain to achieve revers… ▽ More The ability to control magnetism with strain offers innovative pathways for the modulation of magnetic domain configurations and for the manipulation of magnetic states in materials on the nanoscale. Although the effect of strain on magnetic domains has been recognized since the early work of C. Kittel, detailed local observations have been elusive. Here, we use mechanical strain to achieve reversible control of magnetic textures in a kagome-type Fe3Sn2 ferromagnet without the use of an external electric current or magnetic field in situ in a transmission electron microscope at room temperature. We use Fresnel defocus imaging, off-axis electron holography and micromagnetic simulations to show that tensile strain modifies the structures of dipolar skyrmions and switches their magnetization between out-of-plane and in-plane configurations. We also present quantitative measurements of magnetic domain wall structures and their transformations as a function of strain. Our results demonstrate the fundamental importance of anisotropy effects and their interplay with magnetoelastic and magnetocrystalline energies, providing new opportunities for the development of strain-controlled devices for spintronic applications. △ Less

Submitted 17 December, 2024; originally announced December 2024.

Comments: 10 pages, 5 figures

Ferroelectric domain walls for environmental sensors

Authors: L. Richarz, I. C. Skogvoll, E. Y. Tokle, K. A. Hunnestad, U. Ludacka, J. He, E. Bourret, Z. Yan, A. T. J. van Helvoort, J. Schultheiß, S. M. Selbach, D. Meier

Abstract: Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D nature of the walls are leveraged to emulate the behavior of electronic components at ultra-small length scales. Here, we demonstrate atmosphere-related reversib… ▽ More Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D nature of the walls are leveraged to emulate the behavior of electronic components at ultra-small length scales. Here, we demonstrate atmosphere-related reversible changes in the electronic conduction at neutral ferroelectric domain walls in Er(Mn,Ti)O$_3$. By exposing the system to reducing and oxidizing conditions, we drive the domain walls from insulating to conducting, and vice versa, translating the environmental changes into current signals. Density functional theory calculations show that the effect is predominately caused by charge carrier density modulations, which arise as oxygen interstitials accumulate at the domain walls. The work introduces an innovative concept for domain-wall based environmental sensors, giving an additional dimension to the field of domain wall nanoelectronics and sensor technology in general. △ Less

Submitted 4 December, 2024; originally announced December 2024.

Challenges and Insights in Growing Epitaxial FeSn Thin Films on GaAs(111) substrate Using Molecular Beam Epitaxy

Authors: P. Chatterjee, M. Nord, J. He, D. Meier, C. Brüne

Abstract: FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structure, positioning FeSn as an ideal candidate for investigating the interplay between magnetism and topology. In this study, we investigate the epitaxial… ▽ More FeSn is a room-temperature antiferromagnet composed of alternating Fe3Sn kagome layers and honeycomb Sn layers. Its distinctive lattice allows the formation of linearly dispersing Dirac bands and topological flat bands in its electronic band structure, positioning FeSn as an ideal candidate for investigating the interplay between magnetism and topology. In this study, we investigate the epitaxial growth of FeSn thin films on GaAs(111) substrates by molecular beam epitaxy. A significant challenge in this growth process is the diffusion of Ga and As from the substrate into the deposited films and the diffusion of Fe into the substrate. This diffusion complicates the formation of a pure FeSn phase. Through a comprehensive analysis-including reflection high energy electron diffraction, high-resolution X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and vibrating sample magnetometry-we demonstrate that the Sn evaporation temperature plays a critical role in influencing the crystallinity, surface morphology, and magnetic behaviour of the films. Our results show that while it is difficult to grow a single-phase FeSn film on GaAs due to diffusion, optimizing the Sn evaporation temperature can enhance the dominance of the FeSn phase, partially overcoming these challenges. △ Less

Submitted 28 November, 2024; originally announced November 2024.

Comments: 6 pages, 5 figures

Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

Authors: Didrik R. Småbråten, Frida H. Danmo, Nikolai H. Gaukås, Sathya P. Singh, Nikola Kanas, Dennis Meier, Kjell Wiik, Mari-Ann Einarsrud, Sverre M. Selbach

Abstract: The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the… ▽ More The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the anion defect chemistry and semiconducting properties, which makes the system highly sensitive to the synthesis and processing conditions. Here, we study the electronic properties of YMnO3 as function of aliovalent cation doping and thermoatmospheric history, combining density functional theory calculations with thermopower and thermogravimetric measurements. We show that the charge carrier concentration and transport properties can be controlled via both aliovalent cation dopants and anion defects, enabling reversible switching between n-type and p-type conductivity. This tunability is of importance for envisaged applications of hexagonal manganites in, e.g. next-generation capacitors and domain-wall nanoelectronics, or as catalysts or electrodes in fuel cells or electrolyzers. Furthermore, our approach is transferrable to other transition metal oxides, providing general guidelines for controlling their semiconducting properties. △ Less

Submitted 1 November, 2024; originally announced November 2024.

Comments: 6 figures

MSC Class: 82-10 ACM Class: J.2.9

AFM-based Functional Tomography-To Mill or not to Mill, that is the Question!

Authors: Niyorjyoti Sharma, Kristina M. Holsgrove, James Dalzell, Conor J. McCluskey, Jilai He, Dennis Meier, Dharmalingam Prabhakaran, Brian J. Rodriguez, Raymond G. P. McQuaid, J. Marty Gregg, Amit Kumar

Abstract: The electrical response of ferroelectric domain walls is often influenced by their geometry underneath the sample surface. Tomographic imaging in these material systems has therefore become increasingly important for its ability to correlate the surface-level functional response with subsurface domain microstructure. In this context, AFM-based tomography emerges as a compelling choice because of i… ▽ More The electrical response of ferroelectric domain walls is often influenced by their geometry underneath the sample surface. Tomographic imaging in these material systems has therefore become increasingly important for its ability to correlate the surface-level functional response with subsurface domain microstructure. In this context, AFM-based tomography emerges as a compelling choice because of its simplicity, high resolution and robust contrast mechanism. However, to date, the technique has been implemented in a limited number of ferroelectric materials, typically to depths of a few hundred nanometers or on relatively soft materials, resulting in an unclear understanding of its capabilities and limitations. In this work, AFM tomography is carried out in YbMnO3, mapping its complex domain microstructure up to a depth of around 1.8 um along with its current pathways. A model is presented, describing the impact of interconnected domain walls within the network, which act as current dividers and codetermine how currents distribute. Finally, challenges such as tip-blunting and subsurface amorphisation are identified through TEM studies, and strategies to address them are also put forward. This study highlights the potential of AFM tomography and could spur interest within the ferroics community for its use in the investigation of similar material systems. △ Less

Submitted 13 October, 2024; originally announced October 2024.

Reversible long-range domain wall motion in an improper ferroelectric

Authors: M. Zahn, A. M. Müller, K. P. Kelley, S. M. Neumayer, S. V. Kalinin, I. Kézsmarki, M. Fiebig, Th. Lottermoser, N. Domingo, D. Meier, J. Schultheiß

Abstract: Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to the… ▽ More Reversible ferroelectric domain wall movements beyond the 10 nm range associated with Rayleigh behavior are usually restricted to specific defect-engineered systems. Here, we demonstrate that such long-range movements naturally occur in the improper ferroelectric ErMnO3 during electric-field-cycling. We study the electric-field-driven motion of domain walls, showing that they readily return to their initial position after having travelled distances exceeding 250 nm. By applying switching spectroscopy band-excitation piezoresponse force microscopy, we track the domain wall movement with nanometric spatial precision and analyze the local switching behavior. Phase field simulations show that the reversible long-range motion is intrinsic to the hexagonal manganites, linking it to their improper ferroelectricity and topologically protected structural vortex lines, which serve as anchor point for the ferroelectric domain walls. Our results give new insight into the local dynamics of domain walls in improper ferroelectrics and demonstrate the possibility to reversibly displace domain walls over much larger distances than commonly expected for ferroelectric systems in their pristine state, ensuring predictable device behavior for applications such as tunable capacitors or sensors △ Less

Submitted 13 October, 2024; originally announced October 2024.

Relation between rare-earth magnetism and the magnetocaloric effect in multiferroic hexagonal manganites

Authors: R. Dragland, C. Salazar Mejía, I. Hansen, Y. Hamasaki, E. C. Panduro, Y. Ehara, T. Gottschall, D. Meier, J. Schultheiß

Abstract: The magnetocaloric effect enables magnetic refrigeration and plays an important role for cooling at cryogenic temperatures, which is essential for emergent technologies such as hydrogen liquefaction and quantum computing. Here, we study the magnetocaloric effect in multiferroic hexagonal manganites by conducting direct adiabatic temperature measurements in pulsed magnetic fields exceeding 20 T. Da… ▽ More The magnetocaloric effect enables magnetic refrigeration and plays an important role for cooling at cryogenic temperatures, which is essential for emergent technologies such as hydrogen liquefaction and quantum computing. Here, we study the magnetocaloric effect in multiferroic hexagonal manganites by conducting direct adiabatic temperature measurements in pulsed magnetic fields exceeding 20 T. Data gained on polycrystalline HoMnO3, ErMnO3, TmMnO3, and YMnO3 demonstrate a direct correlation between the magnetic 4f-moments and the measured adiabatic temperature change. In HoMnO3, i.e., the system with the largest magnetic 4f-moments, significant temperature changes, ΔTad, of up to 20.1 K are observed, whereas the effect is largely suppressed in YMnO3. Our systematic investigations show the importance of the rare-earth magnetism for the magnetocaloric effect in multiferroic hexagonal manganites at cryogenic temperatures, reaching about 64% of the adiabatic temperature changes reported for gadolinium at room temperature. △ Less

Submitted 11 October, 2024; originally announced October 2024.

Magnetoelectric coupling at the domain level in polycrystalline ErMnO3

Authors: J. Schultheiß, L. Puntigam, M. Winkler, S. Krohns, D. Meier, H. Das, D. M. Evans, I. Kézsmárki

Abstract: We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, f… ▽ More We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, facilitated by intergranular coupling in polycrystalline multiferroics. Our findings give insights into the interplay between electric and magnetic properties at the local scale and represent a so far unexplored pathway for manipulating topologically protected ferroelectric vortex patterns in hexagonal manganites. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

Authors: L. Zhou, L. Puntigam, P. Lunkenheimer, E. Bourret, Z. Yan, I. Kézsmárki, D. Meier, S. Krohns, J. Schultheiß, D. M. Evans

Abstract: A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the pote… ▽ More A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the potential of post-synthesis control of the dielectric constant. However, to date, direct imaging of how changes in domain wall pattern cause a change in dielectric constant within a single sample has not been realized. In this work, we demonstrate that changing the domain wall density allows the engineering of the dielectric constant in hexagonal-ErMnO3 single crystals. The changes of the domain wall density are quantified via microscopy techniques, while the dielectric constant is determined via macroscopic dielectric spectroscopy measurements. The observed changes in the dielectric constant are quantitatively consistent with the observed variation in domain wall density, implying that the insulating domain walls behave as 'ideal' capacitors connected in series. Our approach to engineer the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a novel degree of flexibility to in-situ tune the dielectric constant. △ Less

Submitted 19 January, 2024; originally announced January 2024.

Journal ref: Matter 7 (2024), 2996

Coexistence of multi-scale domains in ferroelectric polycrystals with non-uniform grain-size distributions

Authors: K. Wolk, R. S. Dragland, E. Chavez Panduro, L. Richarz, Z. Yan, E. Bourret, K. A. Hunnestad, Ch. Tzschaschel, J. Schultheiß, D. Meier

Abstract: Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in… ▽ More Engineering of ferroelectric domain structures enables direct control over the switching dynamics and is crucial for tuning the functional properties of ferroelectrics for various applications, ranging from capacitors to future nanoelectronics. Here, we investigate domain formation in poly- and single crystalline improper ferroelectric DyMnO3. We show that a non-uniform grain-size distribution in the polycrystals facilitates the coexistence of multi-scale domains, varying by up to one order of magnitude in size. This unusual domain structure originates from an inverted domain-size/grain-size dependence that is intrinsic to the hexagonal manganite polycrystals, expanding previous studies towards non-uniform grain-size distributions. Our results demonstrate that the micrometer-sized grains in DyMnO3 represent individual ferroelectric units with a characteristic domain structure, giving a new dimension to domain engineering in ferroelectric polycrystals with non-uniform microstructures. △ Less

Submitted 9 January, 2024; originally announced January 2024.

Novel implementations for reservoir computing -- from spin to charge

Authors: Karin Everschor-Sitte, Atreya Majumdar, Katharina Wolk, Dennis Meier

Abstract: Topological textures in magnetic and electric materials are considered to be promising candidates for next-generation information technology and unconventional computing. Here, we discuss how the physical properties of topological nanoscale systems, such as skyrmions and domain walls, can be leveraged for reservoir computing, translating non-linear problems into linearly solvable ones. In addition… ▽ More Topological textures in magnetic and electric materials are considered to be promising candidates for next-generation information technology and unconventional computing. Here, we discuss how the physical properties of topological nanoscale systems, such as skyrmions and domain walls, can be leveraged for reservoir computing, translating non-linear problems into linearly solvable ones. In addition to the necessary requirements of physical reservoirs, the topological textures give new opportunities for the downscaling of devices, enhanced complexity, and versatile input and readout options. Our perspective article presents topological magnetic and electric defects as an intriguing platform for non-linear signal conversion, giving a new dimension to reservoir computing and in-materio computing in general. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Non-destructive tomographic nanoscale imaging of ferroelectric domain walls

Authors: Jiali He, Manuel Zahn, Ivan N. Ushakov, Leonie Richarz, Ursula Ludacka, Erik D. Roede, Zewu Yan, Edith Bourret, István Kézsmárki, Gustau Catalan, Dennis Meier

Abstract: Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain wal… ▽ More Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroicity. A special type of polar interface are ferroelectric domain walls, where electronic reconstruction phenomena can be driven by bound charges. Great progress has been achieved in the characterization of such domain walls and, over the last decade, their potential for next-generation nanotechnology has become clear. Established tomography techniques, however, are either destructive or offer insufficient spatial resolution, creating a pressing demand for 3D imaging compatible with future fabrication processes. Here, we demonstrate non-destructive tomographic imaging of ferroelectric domain walls using secondary electrons. Utilizing conventional scanning electron microscopy (SEM), we reconstruct the position, orientation, and charge state of hidden domain walls at distances up to several hundreds of nanometers away from the surface. A mathematical model is derived that links the SEM intensity variations at the surface to the local domain wall properties, enabling non-destructive tomography with good noise tolerance on the timescale of seconds. Our SEM-based approach facilitates high-throughput screening of materials with functional domain walls and domain-wall-based devices, which is essential for monitoring during the production of device architectures and quality control in real-time. △ Less

Submitted 31 October, 2023; originally announced November 2023.

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Authors: Michele Conroy, Didrik René Småbråten, Colin Ophus, Konstantin Shapovalov, Quentin M. Ramasse, Kasper Aas Hunnestad, Sverre M. Selbach, Ulrich Aschauer, Kalani Moore, J. Marty Gregg, Ursel Bangert, Massimiliano Stengel, Alexei Gruverman, Dennis Meier

Abstract: Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the disc… ▽ More Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena. △ Less

Submitted 5 September, 2023; originally announced September 2023.

3D oxygen vacancy order and defect-property relations in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices

Authors: K. A. Hunnestad, H. Das, C. Hatzoglou, M. Holtz, C. M. Brooks, A. T. J. van Helvoort, D. A. Muller, D. G. Schlom, J. A. Mundy, D. Meier

Abstract: Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Her… ▽ More Oxide heterostructures exhibit a vast variety of unique physical properties. Examples are unconventional superconductivity in layered nickelates and topological polar order in (PbTiO$_3$)$_n$/(SrTiO$_3$)$_n$ superlattices. Although it is clear that variations in oxygen content are crucial for the electronic correlation phenomena in oxides, it remains a major challenge to quantify their impact. Here, we measure the chemical composition in multiferroic (LuFeO$_3$)$_9$/(LuFe$_2$O$_4$)$_1$ superlattices, revealing a one-to-one correlation between the distribution of oxygen vacancies and the electric and magnetic properties. Using atom probe tomography, we observe oxygen vacancies arranging in a layered three-dimensional structure with a local density on the order of 10$^{14}$ cm$^{-2}$, congruent with the formula-unit-thick ferrimagnetic LuFe$_2$O$_4$ layers. The vacancy order is promoted by the locally reduced formation energy and plays a key role in stabilizing the ferroelectric domains and ferrimagnetism in the LuFeO$_3$ and LuFe$_2$O$_4$ layers, respectively. The results demonstrate the importance of oxygen vacancies for the room-temperature multiferroicity in this system and establish an approach for quantifying the oxygen defects with atomic-scale precision in 3D, giving new opportunities for deterministic defect-enabled property control in oxide heterostructures. △ Less

Submitted 30 June, 2023; originally announced July 2023.

Imaging and structure analysis of ferroelectric domains, domain walls, and vortices by scanning electron diffraction

Authors: Ursula Ludacka, Jiali He, Shuyu Qin, Manuel Zahn, Emil Frang Christiansen, Kasper A. Hunnestad, Zewu Yan, Edith Bourret, István Kézsmárki, Antonius T. J. van Helvoort, Joshua Agar, Dennis Meier

Abstract: Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significanc… ▽ More Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent chiral structures and symmetry-breaking distortions that underpin functional properties. Quantifying nanoscale structural features with statistical significance, however, is complicated by the subtleties of dynamic diffraction and coexisting contrast mechanisms, which often results in low signal-to-noise and the superposition of multiple signals that are challenging to deconvolute. Here we apply scanning electron diffraction to explore local polar distortions in the uniaxial ferroelectric Er(Mn,Ti)O$_3$. Using a custom-designed convolutional autoencoder with bespoke regularization, we demonstrate that subtle variations in the scattering signatures of ferroelectric domains, domain walls, and vortex textures can readily be disentangled with statistical significance and separated from extrinsic contributions due to, e.g., variations in specimen thickness or bending. The work demonstrates a pathway to quantitatively measure symmetry-breaking distortions across large areas, mapping structural changes at interfaces and topological structures with nanoscale spatial resolution. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Pressure-control of non-ferroelastic ferroelectric domains in ErMnO3

Authors: O. W. Sandvik, A. M. Müller, H. W. Ånes, M. Zahn, J. He, M. Fiebig, Th. Lottermoser, T. Rojac, D. Meier, J. Schultheiß

Abstract: Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we stu… ▽ More Mechanical pressure controls the structural, electric, and magnetic order in solid state systems, allowing to tailor and improve their physical properties. A well-established example is ferroelastic ferroelectrics, where the coupling between pressure and the primary symmetry breaking order parameter enables hysteretic switching of the strain state and ferroelectric domain engineering. Here, we study the pressure-driven response in a non-ferroelastic ferroelectric, ErMnO3, where the classical stress-strain coupling is absent, and the domain formation is governed by creation-annihilation processes of topological defects. By annealing ErMnO3 polycrystals under variable pressures in the MPa-regime, we transform non-ferroelastic vortex-like domains into stripe-like domains. The width of the stripe-like domains is determined by the applied pressure as we confirm by three-dimensional phase field simulations, showing that pressure leads to highly oriented layer-like periodic domains. Our work demonstrates the possibility to utilize mechanical pressure for domain engineering in non-ferroelastic ferroelectrics, providing a processing-accessible lever to control their dielectric, electromechanical, and piezoelectric response. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Optimizing compositional and atomic-level information of oxides in atom probe tomography

Authors: Kasper Hunnestad, Constantinos Hatzoglou, Francois Vurpillot, Inger-Emma Nylund, Zewu Yan, Edith Bourret, Antonius. T. J. van Helvoort, Dennis Meier

Abstract: Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of… ▽ More Atom probe tomography (APT) is a 3D analysis technique that offers unique chemical accuracy and sensitivity with sub-nanometer spatial resolution. Recently, there is an increasing interest in the application of APT to complex oxides materials, giving new insight into the relation between local variations in chemical composition and emergent physical properties. However, in contrast to the field of metallurgy, where APT is routinely applied to study materials at the atomic level, complex oxides and their specific field evaporation mechanisms are much less explored. Here, we perform APT measurements on the hexagonal manganite ErMnO3 and systematically study the effect of different experimental parameters on the measured composition and atomic structure. We demonstrate that both the mass resolving power (MRP) and compositional accuracy can be improved by increasing the charge-state ratio (CSR) working at low laser energy (< 5 pJ). Furthermore, we observe a substantial preferential retention of Er atoms, which is suppressed at higher CSRs. We explain our findings based on fundamental field evaporation concepts, expanding the knowledge about the impact of key experimental parameters and the field evaporation process in complex oxides in general. △ Less

Submitted 28 March, 2023; originally announced March 2023.

Moiré Fringes in Conductive Atomic Force Microscopy

Authors: L. Richarz, J. He, U. Ludacka, E. Bourret, Z. Yan, A. T. J. van Helvoort, D. Meier

Abstract: Moiré physics plays an important role for the characterization of functional materials and the engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report the observation of moiré fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O$_3$. By performing a systematic study of the… ▽ More Moiré physics plays an important role for the characterization of functional materials and the engineering of physical properties in general, ranging from strain-driven transport phenomena to superconductivity. Here, we report the observation of moiré fringes in conductive atomic force microscopy (cAFM) scans gained on the model ferroelectric Er(Mn,Ti)O$_3$. By performing a systematic study of the impact of key experimental parameters on the emergent moiré fringes, such as scan angle and pixel density, we demonstrate that the observed fringes arise due to a superposition of the applied raster scanning and sample-intrinsic properties, classifying the measured modulation in conductance as a scanning moiré effect. Our findings are important for the investigation of local transport phenomena in moiré engineered materials by cAFM, providing a general guideline for distinguishing extrinsic from intrinsic moiré effects. Furthermore, the experiments provide a possible pathway for enhancing the sensitivity, pushing the resolution limit of local transport measurements by probing conductance variations at the spatial resolution limit via more long-ranged moiré patterns. △ Less

Submitted 3 February, 2023; originally announced February 2023.

Quantitative 3D mapping of chemical defects at charged grain boundaries in a ferroelectric oxide

Authors: K. A. Hunnestad, J. Schultheiß, A. C. Mathisen, I. Ushakov, C. Hatzoglou, A. T. J. van Helvoort, D. Meier

Abstract: Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline fe… ▽ More Polar discontinuities and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. Related effects have been intensively studied in epitaxial systems, including ferroelectric domain walls and interfaces in superlattices. Here, we investigate the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation mapping and different scanning probe microscopy techniques, we demonstrate that the polycrystalline material develops charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography measurements, we find an enrichment of erbium and a depletion of oxygen at all grain boundaries. The observed compositional changes translate into a charge that exceeds possible polarization-driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces. △ Less

Submitted 23 March, 2023; v1 submitted 15 December, 2022; originally announced December 2022.

Investigation of process history and phenomenology of plutonium oxides using vector quantizing variational autoencoder

Authors: Connor Hainje, Cody Nizinski, Shane Jackson, Richard Clark, Forrest Heller, Ian Schwerdt, Edgar Buck, David Meier, Alexander Hagen

Abstract: Accurate, high throughput, and unbiased analysis of plutonium oxide particles is needed for analysis of the phenomenology associated with process parameters in their synthesis. Compared to qualitative and taxonomic descriptors, quantitative descriptors of particle morphology through scanning electron microscopy (SEM) have shown success in analyzing process parameters of uranium oxides. We utilize… ▽ More Accurate, high throughput, and unbiased analysis of plutonium oxide particles is needed for analysis of the phenomenology associated with process parameters in their synthesis. Compared to qualitative and taxonomic descriptors, quantitative descriptors of particle morphology through scanning electron microscopy (SEM) have shown success in analyzing process parameters of uranium oxides. We utilize a VQ-VAE to quantitatively describe plutonium dioxide (PuO2) particles created in a designed experiment and investigate their phenomenology and prediction of their process parameters. PuO2 was calcined from Pu(III) oxalates that were precipitated under varying synthetic conditions that related to concentrations, temperature, addition and digestion times, precipitant feed, and strike order; the surface morphology of the resulting PuO2 powders were analyzed by SEM. A pipeline was developed to extract and quantify useful image representations for individual particles with the VQ-VAE to perform multiple classification tasks simultaneously. The reduced feature space could predict process parameters with greater than 80% accuracies for some parameters with a single particle. They also showed utility for grouping particles with similar surface morphology characteristics together. Both the clustering and classification results reveal valuable information regarding which chemical process parameters chiefly influence the PuO2 particle morphologies: strike order and oxalic acid feedstock. Doing the same analysis with multiple particles was shown to improve the classification accuracy on each process parameter over the use of a single particle, with statistically significant results generally seen with as few as four particles in a sample. △ Less

Submitted 23 December, 2022; v1 submitted 1 December, 2022; originally announced December 2022.

Comments: 23 pages, 13 figures

An ultra-low field SQUID magnetometer for measuring antiferromagnetic and weakly remanent magnetic materials at low temperatures

Authors: Michael Paulsen, Julian Lindner, Bastian Klemke, Jörn Beyer, Michael Fechner, Dennis Meier, Klaus Kiefer

Abstract: A novel setup for the measurement of magnetic fields external to certain antiferromagnets and generally weakly remanent magnetic materials is presented. The setup features a highly sensitive Super Conducting Quantum Interference Device (SQUID) magnetometer with a magnetic field resolution of approx. 10 fT, non-electric thermalization of the sample space for a temperature range of 1.5 - 65 K with a… ▽ More A novel setup for the measurement of magnetic fields external to certain antiferromagnets and generally weakly remanent magnetic materials is presented. The setup features a highly sensitive Super Conducting Quantum Interference Device (SQUID) magnetometer with a magnetic field resolution of approx. 10 fT, non-electric thermalization of the sample space for a temperature range of 1.5 - 65 K with a non-electric sample movement drive and optical position encoding. To minimize magnetic susceptibility effects, the setup components are degaussed and realized with plastic materials in sample proximity. Running the setup in magnetically shielded rooms allows for a well-defined ultra low magnetic background field well below 150 nT in situ. The setup enables studies of inherently weak magnetic materials which cannot be measured with high field susceptibility setups, optical methods or neutron scattering techniques, giving new opportunities for the research on e.g. spin-spiral multiferroics, skyrmion materials and spin ices. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Comments: 5 pages, 5 figures

Confinement-driven inverse domain scaling in polycrystalline ErMnO3

Authors: Jan Schultheiß, Fei Xue, Erik Roede, Håkon W. Ånes, Frida H. Danmo, Sverre M. Selbach, Long-Qing Chen, Dennis Meier

Abstract: The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically p… ▽ More The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex structures and ferroelectric incommensurabilties, which promote emergent physical properties ranging from electric-field-controllable chirality to negative capacitance effects. Here, we study the impact of topologically protected vortices on the domain formation in improper ferroelectric ErMnO3 polycrystals, demonstrating inverted domain scaling behavior compared to classical ferroelectrics. We observe that as the grain size increases, smaller domains are formed, which we relate to the interaction of the topological vortices with local strain fields. The inversion of the domain scaling behavior has far-reaching implications, providing fundamentally new opportunities for topology-based domain engineering and the tuning of the electromechanical and dielectric performance of ferroelectrics in general. △ Less

Submitted 17 April, 2022; originally announced April 2022.

Topological polarization networking in uniaxial ferroelectrics

Authors: Y. Tikhonov, J. R. Maguire, C. J. McCluskey, J. P. V. McConville, A. Kumar, D. Meier, A. Razumnaya, J. M. Gregg, A. Gruverman, V. M. Vinokur, I. Luk'yanchuk

Abstract: Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not be… ▽ More Discovery of topological polarization textures has put ferroelectrics at the frontier of topological matter science. High-symmetry ferroelectric oxide materials allowing for freedom of the polarization vector rotation offer a fertile ground for emergent topological polar formations, like vortices, skyrmions, merons, and Hopfions. It has been commonly accepted that uniaxial ferroelectrics do not belong in the topological universe because strong anisotropy imposes insurmountable energy barriers for topological excitations. Here we show that uniaxial ferroelectrics provide unique opportunity for the formation of topological polarization networks comprising branching intertwined domains with opposite counterflowing polarization. We report that they host the topological state of matter: a crisscrossing structure of topologically protected colliding head-to-head and tail-to-tail polarization domains, which for decades has been considered impossible from the electrostatic viewpoint. The domain wall interfacing the counterflowing domains is a multiconnected surface, propagating through the whole volume of the ferroelectric. △ Less

Submitted 11 April, 2022; originally announced April 2022.

The third dimension of ferroelectric domain walls

Authors: Erik D. Roede, Konstantin Shapovalov, Thomas J. Moran, Aleksander B. Mosberg, Zewu Yan, Edith Bourret, Andres Cano, Bryan D. Huey, Antonius T. J. van Helvoort, Dennis Meier

Abstract: Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being em… ▽ More Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the domain wall orientation relative to the spontaneous polarization and switch between resistive and conductive states, controlling the electrical current. Being embedded in a 3D material, however, the domain walls are not perfectly flat and can form networks, which leads to complex physical structures. We demonstrate the importance of the nanoscale structure for the emergent transport properties, studying electronic conduction in the 3D network of neutral and charged domain walls in ErMnO$_3$. By combining tomographic microscopy techniques and finite element modelling, we clarify the contribution of domain walls within the bulk and show the significance of curvature effects for the local conduction down to the nanoscale. The findings provide insights into the propagation of electrical currents in domain wall networks, reveal additional degrees of freedom for their control, and provide quantitative guidelines for the design of domain wall based technology. △ Less

Submitted 10 March, 2022; originally announced March 2022.

Observation of cation-specific critical behavior at the improper ferroelectric phase transition in Gd2(MoO4)3

Authors: Inger-Emma Nylund, Maria Tsoutsouva, Tor Grande, Dennis Meier

Abstract: Gadolinium molybdate is a classical example of an improper ferroelectric and ferroelastic material. It is established that the spontaneous polarization arises as a secondary effect, induced by a structural instability in the paraelectric phase, which leads to a unit cell doubling and the formation of a polar axis. However, previous X-ray diffraction studies on gadolinium molybdate have been restri… ▽ More Gadolinium molybdate is a classical example of an improper ferroelectric and ferroelastic material. It is established that the spontaneous polarization arises as a secondary effect, induced by a structural instability in the paraelectric phase, which leads to a unit cell doubling and the formation of a polar axis. However, previous X-ray diffraction studies on gadolinium molybdate have been restricted by the limited ability to include the entire 2θ range in the analysis, and thus, at atomic scale, much remains to be explored. By applying temperature dependent X-ray diffraction, we observe the transition from the paraelectric tetragonal phase to the orthorhombic ferroelectric phase. The ferroelastic strain is calculated based on the thermal evolution of the lattice parameters and Rietveld refinement of the temperature dependent data reveals that the displacement of different cations follows different critical behavior, providing new insight into the structural changes that drive the improper ferroelectricity in gadolinium molybdate. △ Less

Submitted 25 November, 2021; v1 submitted 23 November, 2021; originally announced November 2021.

Atomic-scale 3D imaging of individual dopant atoms in a complex oxide

Authors: K. A. Hunnestad, C. Hatzoglou, Z. M. Khalid, P. E. Vullum, Z. Yan, E. Bourret, A. T. J. van Helvoort, S. M. Selbach, D. Meier

Abstract: A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterizati… ▽ More A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical doping controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics. △ Less

Submitted 30 October, 2021; originally announced November 2021.

Unveiling AC electronic properties at ferroelectric domain walls

Authors: Jan Schultheiß, Tadej Rojac, Dennis Meier

Abstract: Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Revie… ▽ More Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional two-dimensional systems for the development of next-generation nanoelectronics. A major achievement in the field was the development of a fundamental framework that explains the emergence of enhanced electronic direct-current (DC) conduction at the domain walls. In this Review, we discuss the much less explored behavior of ferroelectric domain walls under applied alternating-current (AC) voltages. We provide an overview of the recent advances in the nanoscale characterization that allow for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo- to gigahertz regime. We conclude with a discussion about the future direction of the field and novel application opportunities, expanding domain-wall based nanoelectronics into the realm of AC technologies. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Magnetic and geometrical control of spin textures in the itinerant kagome magnet Fe$_3$Sn$_2$

Authors: Markus Altthaler, Erik Lysne, Erik Roede, Lilian Prodan, Vladimir Tsurkan, Mohamed A. Kassem, Stephan Krohns, Istvan Kezsmarki, Dennis Meier

Abstract: Magnetic materials with competing magnetocrystalline anisotropy and dipolar energies can develop a wide range of domain patterns, including classical stripe domains, domain branching, as well as topologically trivial and non-trivial (skyrmionic) bubbles. We image the magnetic domain pattern of Fe$_3$Sn$_2$ by magnetic force microscopy (MFM) and study its evolution due to geometric confinement, mag… ▽ More Magnetic materials with competing magnetocrystalline anisotropy and dipolar energies can develop a wide range of domain patterns, including classical stripe domains, domain branching, as well as topologically trivial and non-trivial (skyrmionic) bubbles. We image the magnetic domain pattern of Fe$_3$Sn$_2$ by magnetic force microscopy (MFM) and study its evolution due to geometric confinement, magnetic fields, and their combination. In Fe$_3$Sn$_2$ lamellae thinner than 3 $μ$m, we observe stripe domains whose size scales with the square root of the lamella thickness, exhibiting classical Kittel scaling. Magnetic fields turn these stripes into a highly disordered bubble lattice, where the bubble size also obeys Kittel scaling. Complementary micromagnetic simulations quantitatively capture the magnetic field and geometry dependence of the magnetic patterns, reveal strong reconstructions of the patterns between the surface and the core of the lamellae, and identify the observed bubbles as skyrmionic bubbles. Our results imply that geometrical confinement together with competing magnetic interactions can provide a path to fine-tune and stabilize different types of topologically trivial and non-trivial spin structures in centrosymmetric magnets. △ Less

Submitted 16 June, 2021; originally announced June 2021.

Comments: 7 pages, 4 figures

Dislocation-driven relaxation processes at the conical to helical phase transition in FeGe

Authors: P. Schoenherr, M. Stepanova, E. N. Lysne, N. Kanazawa, Y. Tokura, A. Bergman, D. Meier

Abstract: The formation of topological spin textures at the nanoscale has a significant impact on the long-range order and dynamical response of magnetic materials. We study the relaxation mechanisms at the conical-to-helical phase transition in the chiral magnet FeGe. By combining ac susceptibility, magnetic force microscopy measurements and micromagnetic simulations, we demonstrate how the motion of magne… ▽ More The formation of topological spin textures at the nanoscale has a significant impact on the long-range order and dynamical response of magnetic materials. We study the relaxation mechanisms at the conical-to-helical phase transition in the chiral magnet FeGe. By combining ac susceptibility, magnetic force microscopy measurements and micromagnetic simulations, we demonstrate how the motion of magnetic topological defects, here edge dislocations, impacts the local formation of a stable helimagnetic spin structure. Although the simulations show that the edge dislocations move with a velocity of about 100 m/s through the helimagnetic background, their dynamics are observed to disturb the magnetic order on the timescale of minutes due to pinning by randomly distributed structural defects. The results corroborate the substantial impact of dislocation motions on the nanoscale spin structure in chiral magnets, revealing previously hidden effects on the formation of helimagnetic domains and domain walls. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Charged ferroelectric domain walls for deterministic a.c. signal control

Authors: J. Schultheiß, E. Lysne, L. Puntigam, J. Schaab, E. Bourret, Z. Yan, S. Krohns, D. Meier

Abstract: The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c… ▽ More The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging from insulating to metallic-like, which is leveraged in domain-wall-based memory, multi-level data storage, and synaptic devices. In contrast to the functional d.c. behaviors at charged walls, their response to alternating currents (a.c.) remains to be resolved. Here, we reveal a.c. characteristics at positively and negatively charged walls in ErMnO3, distinctly different from the response of the surrounding domains. By combining voltage-dependent spectroscopic measurements on macroscopic and local scales, we demonstrate a pronounced non-linear response at the electrode-wall junction, which correlates with the domain-wall charge state. The dependence on the a.c. drive voltage enables reversible switching between uni- and bipolar output signals, providing conceptually new opportunities for the application of charged walls as functional nanoelements in a.c. circuitry. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Detection of Topological Spin Textures via Non-Linear Magnetic Responses

Authors: Mariia Stepanova, Jan Masell, Erik Lysne, Peggy Schoenherr, Laura Köhler, Alireza Qaiumzadeh, Naoya Kanazawa, Achim Rosch, Yoshinori Tokura, Arne Brataas, Markus Garst, Dennis Meier

Abstract: Topologically non-trivial spin textures, such as skyrmions and dislocations, display emergent electrodynamics and can be moved by spin currents over macroscopic distances. These unique properties and their nanoscale size make them excellent candidates for the development of next-generation logic gates, race-track memory, and artificial synapses for neuromorphic computing. A major challenge for the… ▽ More Topologically non-trivial spin textures, such as skyrmions and dislocations, display emergent electrodynamics and can be moved by spin currents over macroscopic distances. These unique properties and their nanoscale size make them excellent candidates for the development of next-generation logic gates, race-track memory, and artificial synapses for neuromorphic computing. A major challenge for these applications - and the investigation of nanoscale magnetic structures in general - is the realization of detection schemes that provide high resolution and sensitivity. We study the local magnetic properties of disclinations, dislocations, and domain walls in FeGe, and reveal a pronounced response that distinguishes the individual spin textures from the helimagnetic background. Combination of magnetic force microscopy and micromagnetic simulations links the non-linear response to the local magnetic susceptibility. Based on the findings, we propose a read-out scheme using superconducting micro-coils, representing an innovative approach for detecting topologically non-trivial spin textures and domain walls in device-relevant geometries. △ Less

Submitted 27 May, 2021; v1 submitted 26 March, 2021; originally announced March 2021.

Journal ref: Nano Lett. 22, 1, 14-21 (2022)

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Authors: Erik D. Roede, Aleksander B. Mosberg, Donald M. Evans, Edith Bourret, Zewu Yan, Antonius T. J. van Helvoort, Dennis Meier

Abstract: Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals… ▽ More Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Effect of pseudo-cubic (111)-oriented orthorhombic substrate facets on perovskite oxide thin film synthesis

Authors: K. Kjærnes, T. Bolstad, D. M. Evans, E. Lysne, B. A. D. Williamson, D. Meier, S. M. Selbach, T. Tybell

Abstract: Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthor… ▽ More Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthorhombic facet, (011)o or (101)o , both corresponding to pseudo-cubic (111)pc , gives vicinal surfaces with single or double (111pc layer terrace step heights, respectively, impacting subsequent thin film growth. Orthorhombic LaFeO3 epitaxy on the (101)o facet reveals a distinction between alternating (111)pc layers, both during and after growth. The observed differences are explained based on the oxygen octahedral tilt pattern relative to the two orthorhombic (111)pc surfaces. This robust structural detail in the orthorhombic perovskite oxides enables utilisation of different (111)pc facets for property engineering, through polyhedral connectivity control and cation coordination at epitaxial interfaces. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Insulating improper ferroelectric domain walls as robust barrier layer capacitors

Authors: Lukas Puntigam, Jan Schultheiß, Ana Strinic, Zewu Yan, Edith Bourret, Markus Altthaler, Istvan Kezsmarki, Donald M. Evans, Dennis Meier, Stephan Krohns

Abstract: We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second o… ▽ More We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors. △ Less

Submitted 20 November, 2020; originally announced November 2020.

Comments: 7 pages, 4 figures

Dimensionality-induced change in topological order in multiferroic oxide superlattices

Authors: Megan E. Holtz, Elliot S. Padgett, Rachel Steinhardt, Charles M. Brooks, Dennis Meier, Darrell G. Schlom, David A. Muller, Julia A. Mundy

Abstract: We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar… ▽ More We construct ferroelectric (LuFeO3)m/(LuFe2O4) superlattices with varying index m to study the effect of confinement on topological defects. We observe a thickness-dependent transition from neutral to charged domain walls and the emergence of fractional vortices. In thin LuFeO3 layers, the volume fraction of domain walls grows, lowering the symmetry from P63cm to P3c1 before reaching the non-polar P63/mmc state, analogous to the high-temperature ferroelectric to paraelectric transition. Our study shows how dimensional confinement stabilizes textures beyond those in bulk ferroelectric systems. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 157601 (2021)

Controlling local resistance via electric-field induced dislocations

Authors: D. M. Evans, D. R. Småbråten, T. S. Holstad, P. E. Vullum, A. B. Mosberg, Z. Yan, E. Bourret, A. T. J. Van Helvoort, S. M. Selbach, D. Meier

Abstract: Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations… ▽ More Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite Er(Ti,Mn)O3 and study their impact on the local electric transport behaviour. The use of an electric field to induce partial dislocations is a conceptually new approach to the burgeoning field of emergent defect-driven phenomena and enables local property control without the need of external macroscopic strain fields. This control is an important step towards integrating and functionalising dislocations in practical devices for future oxide electronics. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Comments: 20 pages, 7 figures

Enhancement in Thermally Generated Spin Voltage at Pd/NiFe$_2$O$_4$ Interfaces by the Growth on Lattice-Matched Substrates

Authors: A. Rastogi, Z. Li, A. V. Singh, S. Regmi, T. Peters, P. Bougiatioti, D. Carsten né Meier, J. B. Mohammadi, B. Khodadadi, T. Mewes, R. Mishra, J. Gazquez, A. Y. Borisevich, Z. Galazka, R. Uecker, G. Reiss, T. Kuschel, A. Gupta

Abstract: Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the… ▽ More Efficient spin injection from epitaxial ferrimagnetic NiFe$_2$O$_4$ thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. The NiFe$_2$O$_4$ films (60 nm to 1 $μ$m) are grown by pulsed laser deposition on isostructural spinel MgAl$_2$O$_4$, MgGa$_2$O$_4$, and CoGa$_2$O$_4$ substrates with lattice mismatch varying between 3.2% and 0.2%. For the thinner films ($\leq$ 330 nm), an increase in the spin Seebeck voltage is observed with decreasing lattice mismatch, which correlates well with a decrease in the Gilbert damping parameter as determined from ferromagnetic resonance measurements. High resolution transmission electron microscopy studies indicate substantial decrease of antiphase boundary and interface defects that cause strain-relaxation, i.e., misfit dislocations, in the films with decreasing lattice mismatch. This highlights the importance of reducing structural defects in spinel ferrites for efficient spin injection. It is further shown that angle-dependent spin Seebeck effect measurements provide a qualitative method to probe for in-plane magnetic anisotropies present in the films. △ Less

Submitted 1 June, 2020; originally announced June 2020.

Comments: 18 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 014014 (2020)

Local control of improper ferroelectric domains in YMnO$_3$

Authors: Lukas Kuerten, Stephan Krohns, Peggy Schoenherr, Katharina Holeczek, Ekaterina Pomjakushina, Thomas Lottermoser, Morgan Trassin, Dennis Meier, Manfred Fiebig

Abstract: Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic or otherwise non-electric order, and the electric polarization, which is induced by the primary order parameter as a secondary, complementary effect. Using low-temperature scanning probe microscopy, we show that improper ferroelectric domains in YMnO$_3$ can be loca… ▽ More Improper ferroelectrics are described by two order parameters: a primary one, driving a transition to long-range distortive, magnetic or otherwise non-electric order, and the electric polarization, which is induced by the primary order parameter as a secondary, complementary effect. Using low-temperature scanning probe microscopy, we show that improper ferroelectric domains in YMnO$_3$ can be locally switched by electric field poling. However, subsequent temperature changes restore the as-grown domain structure as determined by the primary lattice distortion. The backswitching is explained by uncompensated bound charges occuring at the newly written domain walls due to the lack of mobile screening charges at low temperature. Thus, the polarization of improper ferroelectrics is in many ways subject to the same electrostatics as in their proper counterparts, yet complemented by additional functionalities arising from the primary order parameter. Tailoring the complex interplay between primary order parameter, polarization, and electrostatics is therefore likely to result in novel functionalities specific to improper ferroelectrics. △ Less

Submitted 14 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 102, 094108 (2020)

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Authors: J. Schultheiß, J. Schaab, D. R. Småbråten, S. H. Skjærvø, E. Bourret, Z. Yan, S. M. Selbach, D. Meier

Abstract: Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are… ▽ More Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are explained based on established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting domain wall behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes new possibilities for tuning their electronic response based on oxidation conditions, opening the door for domain-wall based sensor technology. △ Less

Submitted 30 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: 5 pages, 3 figures

Electrostatic potential mapping at ferroelectric domain walls by low-temperature photoemission electron microscopy

Authors: J. Schaab, K. Shapovalov, P. Schoenherr, J. Hackl, M. I. Khan, M. Hentschel, Z. Yan, E. Bourret, C. M. Schneider, S. Nemsák, M. Stengel, A. Cano, D. Meier

Abstract: Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic… ▽ More Low-temperature X-ray photoemission electron microscopy (X-PEEM) is used to measure the electric potential at domain walls in improper ferroelectric Er0.99Ca0.01MnO3. By combining X-PEEM with scanning probe microscopy and theory, we develop a model that relates the detected X-PEEM contrast to the emergence of uncompensated bound charges, explaining the image formation based on intrinsic electronic domain-wall properties. In contrast to previously applied low-temperature electrostatic force microscopy (EFM), X-PEEM readily distinguishes between positive and negative bound charges at domain walls. Our study introduces an X-PEEM based approach for low-temperature electrostatic potential mapping, facilitating nanoscale spatial resolution and data acquisition times in the order of 0.1-1 sec. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Comments: 15 pages, 6 figures

Journal ref: Appl. Phys. Lett. 115, 122903 (2019)

Spincaloritronic measurements: a round robin comparison of the longitudinal spin Seebeck effect

Authors: A. Sola, V. Basso, M. Kuepferling, M. Pasquale, D. Meier, G. Reiss, T. Kuschel, T. Kikkawa, K. Uchida, E. Saitoh, H. Jin, S. Boona, S. Watzman, J. Heremans, M. B. Jungfleisch, W. Zhang, J. E. Pearson, A. Hoffmann, H. W. Schumacher

Abstract: The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck c… ▽ More The rising field of spin caloritronics focuses on the interactions between spin and heat currents in a magnetic material; the observation of the spin Seebeck effect opened the route to this branch of research. This paper reports the results of a round robin test performed by five partners on a single device highlighting the reproducibility problems related to the measurements of the spin Seebeck coefficient, the quantity that describes the strength of the spin Seebeck effect. This work stimulated the search for more reproducible measurement methods through the analysis of the systematic effects. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Comments: PDFLaTeX, 8 pages, 8 figures

Journal ref: IEEE Trans. Instrum. Meas. 68, 1765 (2019)

Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Authors: Didrik R. Småbråten, Quintin N. Meier, Sandra H. Skjærvø, Katherine Inzani, Dennis Meier, Sverre M. Selbach

Abstract: Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper fer… ▽ More Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO$_3$, InMnO$_3$ and YGaO$_3$ by first principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width, reflecting that polarization is not the driving force for domain formation. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization. We introduce general rules for how to engineer $n$- and $p$-type domain wall conductivity based on the domain size, polarization and electronic band gap. This opens the possibility of fine-tuning the local transport properties and design $p$-$n$-junctions for domain wall-based nano-circuitry. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 10 pages, 6 figures, Supp. Info. available on request

Journal ref: Phys. Rev. Materials 2, 114405 (2018)

Electrical half-wave rectification at ferroelectric domain walls

Authors: J. Schaab, S. H. Skjærvø, S. Krohns, X. Dai, M. Holtz, A. Cano, M. Lilienblum, Z. Yan, E. Bourret, D. A. Muller, M. Fiebig, S. M. Selbach, D. Meier

Abstract: Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique robustness, are the ideal template for imposing specific electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric field… ▽ More Ferroelectric domain walls represent multifunctional 2D-elements with great potential for novel device paradigms at the nanoscale. Improper ferroelectrics display particularly promising types of domain walls, which, due to their unique robustness, are the ideal template for imposing specific electronic behavior. Chemical doping, for instance, induces p- or n-type characteristics and electric fields reversibly switch between resistive and conductive domain-wall states. Here, we demonstrate diode-like conversion of alternating-current (AC) into direct-current (DC) output based on neutral 180$^{\circ}$ domain walls in improper ferroelectric ErMnO$_3$. By combining scanning probe and dielectric spectroscopy, we show that the rectification occurs for frequencies at which the domain walls are fixed to their equilibrium position. The practical frequency regime and magnitude of the output is controlled by the bulk conductivity. Using density functional theory we attribute the transport behavior at the neutral walls to an accumulation of oxygen defects. Our study reveals domain walls acting as 2D half-wave rectifiers, extending domain-wall-based nanoelectronic applications into the realm of AC technology. △ Less

Submitted 22 March, 2018; originally announced March 2018.

Frequency dependent polarisation switching in h-ErMnO$_3$

Authors: Alexander Ruff, Ziyu Li, Alois Loidl, Jakob Schaab, Manfred Fiebig, Andres Cano, Zewu Yan, Edith Bourret, Julia Glaum, Dennis Meier, Stephan Krohns

Abstract: We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers.… ▽ More We report an electric-field poling study of the geometric-driven improper ferroelectric h-ErMnO$_3$. From a detailed dielectric analysis we deduce the temperature and frequency dependent range for which single-crystalline h-ErMnO$_3$ exhibits purely intrinsic dielectric behaviour, i.e., free from extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime ferroelectric hysteresis loops as function of frequency, temperature and applied electric fields are measured revealing the theoretically predicted saturation polarisation in the order of 5 - 6 $μ$C/cm$^2$. Special emphasis is put on frequency-dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics. △ Less

Submitted 26 February, 2018; originally announced February 2018.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 112, 182908 (2018)