Roadmap to fault tolerant quantum computation using topological qubit arrays
Authors:
David Aasen,
Morteza Aghaee,
Zulfi Alam,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Lukas Avilovas,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Juan M. Bello-Rivas,
Umesh Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Parsa Bonderson,
Jan Borovsky,
Leo Bourdet,
Samuel Boutin,
Tom Brown,
Gary Campbell,
Lucas Casparis,
Srivatsa Chakravarthi,
Rui Chao
, et al. (157 additional authors not shown)
Abstract:
We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap encompasses four generations of devices: a single-qubit device that enables a measurement-based qubit benchmarking protocol; a two-qubit device that uses measurement-based braiding to perform single-qubit Clifford operati…
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We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap encompasses four generations of devices: a single-qubit device that enables a measurement-based qubit benchmarking protocol; a two-qubit device that uses measurement-based braiding to perform single-qubit Clifford operations; an eight-qubit device that can be used to show an improvement of a two-qubit operation when performed on logical qubits rather than directly on physical qubits; and a topological qubit array supporting lattice surgery demonstrations on two logical qubits. Devices that enable this path require a superconductor-semiconductor heterostructure that supports a topological phase, quantum dots and coupling between those quantum dots that can create the appropriate loops for interferometric measurements, and a microwave readout system that can perform fast, low-error single-shot measurements. We describe the key design components of these qubit devices, along with the associated protocols for demonstrations of single-qubit benchmarking, Clifford gate execution, quantum error detection, and quantum error correction, which differ greatly from those in more conventional qubits. Finally, we comment on implications and advantages of this architecture for utility-scale quantum computation.
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Submitted 7 April, 2025; v1 submitted 17 February, 2025;
originally announced February 2025.
Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance
Authors:
Ashutosh Giri,
Sean W. King,
William A. Lanford,
Antonio R. Mei,
Devin Merril,
Liza Ross,
Ron Oviedo,
John Richards,
David H. Olson,
Jeffrey L. Braun,
John T. Gaskins,
Freddy DeAngelis,
Asegun Henry,
Patrick E. Hopkins
Abstract:
The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the materia…
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The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the material interface and defect atoms,$^{2-6}$ a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, we provide evidence that interfacial defects can enhance the TBC across interfaces through the emergence of unique high frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. We demonstrate ultrahigh TBC at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m$^{-2}$ K$^{-1}$, that is further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects offers a unique direction in controlling interfacial thermal transport that becomes important in manipulating heat transfer across materials with high densities of interfaces.
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Submitted 25 October, 2017;
originally announced October 2017.
