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Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet
Authors:
S M Enamul Hoque Yousuf,
Yunong Wang,
Shreyas Ramachandran,
John Koptur-Palenchar,
Chiara Tarantini,
Li Xiang,
Stephen McGill,
Dmitry Smirnov,
Elton J. G. Santos,
Philip X. -L. Feng,
Xiao-Xiao Zhang
Abstract:
The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical mo…
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The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical motions can couple to a different type of magnetic structure, the non-collinear spin textures, which exhibit nanoscale spatial variations of spin (domain walls, skyrmions, etc.) and are promising candidates to realize high-speed computing devices. Here, we report the detection of collective spin texture dynamics with nanoelectromechanical resonators made of two-dimensional antiferromagnetic (AFM) MnPS3 with $10^{-9}$ strain sensitivity. By examining radio frequency mechanical oscillations under magnetic fields, new magnetic transitions were identified with sharp dips in resonant frequency. They are attributed to the collective AFM domain wall motions as supported by the analytical modeling of magnetostriction and large-scale spin-dynamics simulations. Additionally, an abnormally large modulation in the mechanical nonlinearity at the transition field infers a fluid-like response due to the ultrafast domain motion. Our work establishes a strong coupling between spin texture and mechanical dynamics, laying the foundation for electromechanical manipulation of spin texture and developing quantum hybrid devices.
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Submitted 14 March, 2025;
originally announced March 2025.
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Observation of the superconducting proximity effect from surface states in SmB$_6$/YB$_6$ thin film heterostructures via terahertz spectroscopy
Authors:
Jonathan Stensberg,
Xingyue Han,
Seunghun Lee,
Stephen A. McGill,
Johnpierre Paglione,
Ichiro Takeuchi,
Charles L. Kane,
Liang Wu
Abstract:
The AC conduction of epitaxially-grown SmB$_6$ thin films and superconducting heterostructures of SmB$_6$/YB$_6$ are investigated via time domain terahertz spectroscopy. A two-channel model of thickness-dependent bulk states and thickness-independent surface states accurately describes the measured conductance of bare SmB$_6$ thin films, demonstrating the presence of surface states in SmB$_6$. Whi…
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The AC conduction of epitaxially-grown SmB$_6$ thin films and superconducting heterostructures of SmB$_6$/YB$_6$ are investigated via time domain terahertz spectroscopy. A two-channel model of thickness-dependent bulk states and thickness-independent surface states accurately describes the measured conductance of bare SmB$_6$ thin films, demonstrating the presence of surface states in SmB$_6$. While the observed reductions in the simultaneously-measured superconducting gap, transition temperature, and superfluid density of SmB$_6$/YB$_6$ heterostructures relative to bare YB$_6$ indicate the penetration of proximity-induced superconductivity into the SmB$_6$ overlayer; the corresponding SmB$_6$-thickness independence between different heterostructures indicates that the induced superconductivity is predominantly confined to the interface surface state of the SmB$_6$. This study demonstrates the ability of terahertz spectroscopy to probe proximity-induced superconductivity at an interface buried within a heterostructure, and our results show that SmB$_6$ behaves as a predominantly insulating bulk surrounded by conducting surface states in both the normal and induced-superconducting states in both terahertz and DC responses, which is consistent with the topological Kondo insulator picture.
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Submitted 26 January, 2023; v1 submitted 20 December, 2021;
originally announced December 2021.
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Growth and Characterization of Off-Stoichiometric LaVO$_3$ Thin Films
Authors:
Biwen Zhang,
Yan Xin,
Evguenia Karapetrova,
Jade Holleman,
Stephen A. McGill,
Christianne Beekman
Abstract:
LaVO$_3$ (LVO) has been proposed as a promising material for photovoltaics because its strongly correlated \textit{d} electrons can facilitate the creation of multiple electron-hole pairs per incoming photon, which would lead to increased device efficiency. In this study, we intentionally grow off-stoichiometric LVO films by changing the growth conditions such as laser fluence. Our aim is to study…
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LaVO$_3$ (LVO) has been proposed as a promising material for photovoltaics because its strongly correlated \textit{d} electrons can facilitate the creation of multiple electron-hole pairs per incoming photon, which would lead to increased device efficiency. In this study, we intentionally grow off-stoichiometric LVO films by changing the growth conditions such as laser fluence. Our aim is to study how deviating La:V stoichiometries affect the electronic properties of LVO thin films. We find that the off-stoichiometry clearly alters the physical properties of the films. Structural characterization shows that both La-rich and V-rich films have different levels of structural distortion, with La-rich (V-rich) films showing a larger (smaller) out-of-plane lattice parameter compared to what one would expect from epitaxial strain effects alone. Both types of films show deviation from the behavior of bulk LVO in optical measurement, i.e., they do not show signatures of the expected long range orbital order, which can be a result of the structural distortions or the presence of structural domains. In transport measurements, La-rich films display clear signatures of electronic phase separation accompanying a temperature induced metal-insulator transition, while V-rich films behave as Mott insulators. The out-of-plane lattice parameter plays a crucial role in determining the transport properties, as the crossover from Mott-insulating to disorder-induced phase-separated behavior occurs around a lattice parameter value of 3.96 $\overset{\circ}{\mathrm{A}}$, quite different from what has been previously reported.
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Submitted 20 August, 2021;
originally announced August 2021.
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Magnetic field tuning of crystal field levels and vibronic states in Spin-ice Ho$_2$Ti$_2$O$_7$ observed in far-infrared reflectometry
Authors:
Mykhaylo Ozerov,
Naween Anand,
L. J. van de Burgt,
Zhengguang Lu,
Jade Holleman,
Haidong Zhou,
Steve McGill,
Christianne Beekman
Abstract:
Low temperature optical spectroscopy in applied magnetic fields provides clear evidence of magnetoelastic coupling in the spin ice material Ho$_2$Ti$_2$O$_7$. In far-IR reflectometry measurements, we observe field dependent features around 30, 61, 72 and 78~meV, energies corresponding to crystal electronic field (CEF) doublets. The calculations of the crystal-field Hamiltonian model confirm that t…
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Low temperature optical spectroscopy in applied magnetic fields provides clear evidence of magnetoelastic coupling in the spin ice material Ho$_2$Ti$_2$O$_7$. In far-IR reflectometry measurements, we observe field dependent features around 30, 61, 72 and 78~meV, energies corresponding to crystal electronic field (CEF) doublets. The calculations of the crystal-field Hamiltonian model confirm that the observed features in IR spectra are consistent with magnetic-dipole-allowed excitations from the ground state to higher $^5$I$_8$ CEF levels. We present the CEF parameters that best describe our field-dependent IR reflectivity measurements. Additionally, we identify a weak field-dependent shoulder near one of the CEF doublets. This indicates that this level is split even in zero-field, which we associate with a vibronic bound state. Modeling of the observed splitting shows that the phonon resides at slightly lower energy compared to the CEF level that it couples to, which is in contrast with previously published inelastic neutron measurements. The magnetic field dependence of the vibronic state shows a gradual decoupling of the phonon with the CEF level as it shifts. This approach should work in pyrochlores and other systems that have magnetic dipole transitions in the IR spectroscopic range, which can elucidate the presence and the ability to tune the nature of vibronic states in a wide variety of materials.
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Submitted 5 September, 2022; v1 submitted 12 March, 2021;
originally announced March 2021.
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Direct Observation of Gate Tunable Dark Trions in Monolayer WSe2
Authors:
Zhipeng Li,
Tianmeng Wang,
Zhengguang Lu,
Mandeep Khatoniar,
Zhen Lian,
Yuze Meng,
Mark Blei,
Takashi Taniguchi,
Kenji Watanabe,
Stephen A. McGill,
Sefaattin Tongay,
Vinod M. Menon,
Dmitry Smirnov,
Su-Fei Shi
Abstract:
Spin-forbidden intravalley dark exciton in tungsten-based transition metal dichalcogenides (TMDCs), owing to its unique spin texture and long lifetime, has attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique m…
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Spin-forbidden intravalley dark exciton in tungsten-based transition metal dichalcogenides (TMDCs), owing to its unique spin texture and long lifetime, has attracted intense research interest. Here, we show that we can control the dark exciton electrostatically by dressing it with one free electron or free hole, forming the dark trions. The existence of the dark trions is suggested by the unique magneto-photoluminescence spectroscopy pattern of the boron nitride (BN) encapsulated monolayer WSe2 device at low temperature. The unambiguous evidence of the dark trions is further obtained by directly resolving the radiation pattern of the dark trions through back focal plane imaging. The dark trions possess binding energy of ~ 15 meV, and it inherits the long lifetime and large g-factor from the dark exciton. Interestingly, under the out-of-plane magnetic field, dressing the dark exciton with one free electron or hole results in distinctively different valley polarization of the emitted phonon, a result of the different intervalley scattering mechanism for the electron and hole. Finally, the lifetime of the positive dark trion can be further tuned from ~ 50 to ~ 215 ps by controlling the gate voltage. The gate tunable dark trions ushers in new opportunities for excitonic optoelectronics and valleytronics.
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Submitted 9 September, 2019;
originally announced September 2019.
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Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
Authors:
Nihar R. Pradhan,
Carlos Garcia,
Bridget Isenberg,
Daniel Rhodes,
Simin Feng,
Shahriar Memaran,
Yan Xin,
Amber McCreary,
Angela R. Hight Walker,
Aldo Raeliarijaona,
Humberto Terrones,
Mauricio Terrones,
Stephen McGill,
Luis Balicas
Abstract:
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero thresho…
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We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 10^2 cm^2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90^o or nearly 180^o. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.
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Submitted 10 August, 2018;
originally announced August 2018.
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Probing Anomalous Inelastic Scattering in Spin-ice Ho$_2$Ti$_2$O$_7$ through Resonant Raman Spectroscopy
Authors:
Naween Anand,
L. J. van de Burgt,
Q. Huang,
Jade Holleman,
Haidong Zhou,
Stephen A McGill,
Christianne Beekman
Abstract:
We report on a study of the inelastic scattering properties of (001) and (111) Ho$_2$Ti$_2$O$_7$ single crystals at room temperature. Structural and compositional analysis along with absorption measurement confirms single crystalline phase of all samples. Room temperature polarized Raman measurements were performed on crystals in non-resonant and two different resonant conditions by using six diff…
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We report on a study of the inelastic scattering properties of (001) and (111) Ho$_2$Ti$_2$O$_7$ single crystals at room temperature. Structural and compositional analysis along with absorption measurement confirms single crystalline phase of all samples. Room temperature polarized Raman measurements were performed on crystals in non-resonant and two different resonant conditions by using six different laser excitation lines. Lorentzian model fitting analysis is performed on all measured spectra in order to identify the difference in the Raman scattering cross-section in resonant and non-resonant conditions. Variations in the fitting parameters on account of different polarization configurations and crystallographic orientations has helped identifying their symmetry if present. Several possible scattering pathways are discussed in order to qualitatively explain the anomalous scattering results in Ho$_2$Ti$_2$O$_7$
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Submitted 14 May, 2018;
originally announced May 2018.
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Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
Authors:
V. X. Ho,
T. V. Dao,
H. X. Jiang,
J. Y. Lin,
J. M. Zavada,
S. A. McGill,
N. Q. Vinh
Abstract:
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a pic…
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We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a picture of the thermal quenching processes and activation energy levels. By comparing the photoluminescence from Er ions in the epilayer with a reference sample of Er-doped SiO2, we find that the fraction of Er ions that emits photon at 1.54 micron upon a resonant optical excitation is approximately 68%. This result presents a significant step in the realization of GaN:Er epilayers as an optical gain medium at 1.54 micron.
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Submitted 25 November, 2016;
originally announced November 2016.
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Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements
Authors:
Nihar R. Pradhan,
Carlos Garcia,
Joshua Holleman,
Daniel Rhodes,
Chason Parkera,
Saikat Talapatra,
Mauricio Terrones,
Luis Balicas,
Stephen A. McGill
Abstract:
Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination b…
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Recently, two-dimensional materials and in particular transition metal dichalcogenides (TMDs) were extensively studied because of their strong light-matter interaction and the remarkable optoelectronic response of their field-effect transistors (FETs). Here, we report a photoconductivity study from FETs built from few-layers of p-WSe2 measured in a multi-terminal configuration under illumination by a 532 nm laser source. The photogenerated current was measured as a function of the incident optical power, of the drain-to-source bias and of the gate voltage. We observe a considerably larger photoconductivity when the phototransistors were measured via a four-terminal configuration when compared to a two-terminal one. For an incident laser power of 248 nW, we extract 18 A/W and ~4000% for the two-terminal responsivity (R) and the concomitant external quantum efficiency (EQE) respectively, when a bias voltage Vds = 1 V and a gate voltage Vbg = 10 V are applied to the sample. R and EQE are observed to increase by 370% to ~85 A/W and ~20000% respectively, when using a four-terminal configuration. Thus, we conclude that previous reports have severely underestimated the optoelectronic response of transition metal dichalcogenides, which in fact reveals a remarkable potential for photosensing applications.
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Submitted 27 September, 2016;
originally announced September 2016.
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Indirect Spin Exchange Interaction in Substituted Copper Phthalocyanine Crystalline Thin Films
Authors:
Naveen Rawat,
Zhenwen Pan,
Cody J. Lamarche,
Takahisa Tokumoto,
Judy G. Cherian,
Anthony Wetherby,
Rory Waterman,
Randall L. Headrick,
Stephen A. McGill,
Madalina I. Furis
Abstract:
The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a sp…
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The origins of indirect spin exchange in crystalline thin films of Copper Octabutoxy Phthalocyanine (Cu-OBPc) are investigated using Magnetic Circular Dichroism (MCD) spectroscopy. These studies are made possible by a solution deposition technique which produces highly ordered films with macroscopic grain sizes suitable for optical studies. For temperatures lower than 2 K, the contribution of a specific state in the valence band manifold originating from the hybridized lone pair in nitrogen orbitals of the Phthalocyanine ring, bears the Brillouin-like signature of an exchange interaction with the localized $\textit{d}$-shell Cu spins. A comprehensive MCD spectral analysis coupled with a molecular field model of a $σπ-d$ exchange analogous to $\textit{sp-d}$ interactions in Diluted Magnetic Semiconductors (DMS) renders an enhanced Zeeman splitting and a modified $\textit{g}$-factor of -4 for the electrons that mediate the interaction. These studies define an experimental tool for identifying electronic states involved in spin-dependent exchange interactions in organic materials.
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Submitted 12 July, 2015;
originally announced July 2015.
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High Photoresponsivity and Short Photo Response Times in Few-Layered WSe$_2$ Transistors
Authors:
Nihar R. Pradhan,
Jonathan Ludwig,
Zhengguang Lu,
Daniel Rhodes,
Michael M. Bishop,
Komalavalli Thirunavukkuarasu,
Stephen A. McGill,
Dmitry Smirnov,
Luis Balicas
Abstract:
Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value…
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Here, we report the photoconducting response of field-effect transistors based on three atomic layers of chemical vapor transport grown WSe$_2$ crystals mechanically exfoliated onto SiO$_2$. We find that tri-layered WSe$_2$ field-effect transistors, built with the simplest possible architecture, can display high hole mobilities ranging from 350 cm$^2$/Vs at room temperature (saturating at a value of ~500 cm$^2$/Vs below 50 K) displaying a strong photocurrent response which leads to exceptionally high photo responsivities up to 7 A/W under white light illumination of the entire channel for power densities p < 10$^2$ W/m$^2$. Under a fixed wavelength of $λ$ = 532 nm and a laser spot size smaller than the conducting channel area we extract photo responsitivities approaching 100 mA/W with concomitantly high external quantum efficiencies up to ~ 40 % at room temperature. These values surpass values recently reported from more complex architectures, such as graphene and transition metal dichalcogenides based heterostructures. Also, tri-layered WSe$_2$ photo-transistors display photo response times in the order of 10 microseconds. Our results indicate that the addition of a few atomic layers considerably decreases the photo response times, probably by minimizing the interaction with the substrates, while maintaining a very high photo-responsivity.
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Submitted 19 May, 2015;
originally announced May 2015.
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Fermi-Edge Superfluorescence from a Quantum-Degenerate Electron-Hole Gas
Authors:
J. -H. Kim,
G. T. Noe,
S. A. McGill,
Y. Wang,
A. K. Wojcik,
A. A. Belyanin,
J. Kono
Abstract:
We report on the observation of spontaneous bursts of coherent radiation from a quantum-degenerate gas of nonequilibrium electron-hole pairs in semiconductor quantum wells. Unlike typical spontaneous emission from semiconductors, which occurs at the band edge, the observed emission occurs at the quasi-Fermi edge of the carrier distribution. As the carriers are consumed by recombination, the quasi-…
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We report on the observation of spontaneous bursts of coherent radiation from a quantum-degenerate gas of nonequilibrium electron-hole pairs in semiconductor quantum wells. Unlike typical spontaneous emission from semiconductors, which occurs at the band edge, the observed emission occurs at the quasi-Fermi edge of the carrier distribution. As the carriers are consumed by recombination, the quasi-Fermi energy goes down toward the band edge, and we observe a continuously red-shifting streak. We interpret this emission as cooperative spontaneous recombination of electron-hole pairs, or superfluorescence, which is enhanced by Coulomb interactions near the Fermi edge. This novel many-body enhancement allows the magnitude of the spontaneously developed macroscopic polarization to exceed the maximum value for ordinary superfluorescence, making electron-hole superfluorescence even more "super" than atomic superfluorescence.
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Submitted 14 December, 2013;
originally announced December 2013.
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Generation of Superfluorescent Bursts from a Fully Tunable Semiconductor Magneto-plasma
Authors:
G. T. Noe,
J. -H. Kim,
J. Lee,
Y. -D. Jho,
Y. Wang,
A. K. Wojcik,
S. A. McGill,
D. H. Reitze,
A. A. Belyanin,
J. Kono
Abstract:
Quantum particles sometimes cooperate to develop a macroscopically ordered state with extraordinary properties. Superconductivity and Bose-Einstein condensation are examples of such cooperative phenomena where macroscopic order appears spontaneously. Here, we demonstrate that such an ordered state can also be obtained in an optically excited semiconductor quantum well in a high magnetic field. Whe…
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Quantum particles sometimes cooperate to develop a macroscopically ordered state with extraordinary properties. Superconductivity and Bose-Einstein condensation are examples of such cooperative phenomena where macroscopic order appears spontaneously. Here, we demonstrate that such an ordered state can also be obtained in an optically excited semiconductor quantum well in a high magnetic field. When we create a dense electron-hole plasma with an intense laser pulse, after a certain delay, an ultrashort burst of coherent radiation emerges. We interpret this striking phenomenon as a manifestation of superfluorescence (SF), in which a macroscopic polarization spontaneously builds up from an initially incoherent ensemble of excited quantum oscillators and then decays abruptly producing giant pulses of coherent radiation. SF has been observed in atomic gases, but the present work represents the first observation of SF in a solid-state setting. While there is an analogy between the recombination of electron-hole pairs and radiative transitions in atoms, there is no a priori reason for SF in semiconductors to be similar to atomic SF. This is a complex many-body system with a variety of ultrafast interactions, where the decoherence rates are at least 1,000 times faster than the radiative decay rate, an unusual situation totally unexplored in previous atomic SF studies. We show, nonetheless, that collective many-body coupling via a common radiation field does develop under certain conditions and leads to SF bursts. The solid-state realization of SF resulted in an unprecedented degree of controllability in the generation of SF, opening up opportunities for both fundamental many-body studies and device applications. We demonstrate that the intensity and delay time of SF bursts are fully tunable through an external magnetic field, temperature, and pump laser power.
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Submitted 21 April, 2012;
originally announced April 2012.
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Giant Superfluorescent Bursts from a Semiconductor Magnetoplasma
Authors:
G. T. Noe,
J. -H. Kim,
J. Lee,
Y. Wang,
A. K. Wojcik,
S. A. McGill,
D. H. Reitze,
A. A. Belyanin,
J. Kono
Abstract:
Currently, considerable resurgent interest exists in the concept of superradiance (SR), i.e., accelerated relaxation of excited dipoles due to cooperative spontaneous emission, first proposed by Dicke in 1954. Recent authors have discussed SR in diverse contexts, including cavity quantum electrodynamics, quantum phase transitions, and plasmonics. At the heart of these various experiments lies the…
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Currently, considerable resurgent interest exists in the concept of superradiance (SR), i.e., accelerated relaxation of excited dipoles due to cooperative spontaneous emission, first proposed by Dicke in 1954. Recent authors have discussed SR in diverse contexts, including cavity quantum electrodynamics, quantum phase transitions, and plasmonics. At the heart of these various experiments lies the coherent coupling of constituent particles to each other via their radiation field that cooperatively governs the dynamics of the whole system. In the most exciting form of SR, called superfluorescence (SF), macroscopic coherence spontaneously builds up out of an initially incoherent ensemble of excited dipoles and then decays abruptly. Here, we demonstrate the emergence of this photon-mediated, cooperative, many-body state in a very unlikely system: an ultradense electron-hole plasma in a semiconductor. We observe intense, delayed pulses, or bursts, of coherent radiation from highly photo-excited semiconductor quantum wells with a concomitant sudden decrease in population from total inversion to zero. Unlike previously reported SF in atomic and molecular systems that occur on nanosecond time scales, these intense SF bursts have picosecond pulse-widths and are delayed in time by tens of picoseconds with respect to the excitation pulse. They appear only at sufficiently high excitation powers and magnetic fields and sufficiently low temperatures - where various interactions causing decoherence are suppressed. We present theoretical simulations based on the relaxation and recombination dynamics of ultrahigh-density electron-hole pairs in a quantizing magnetic field, which successfully capture the salient features of the experimental observations.
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Submitted 8 December, 2011; v1 submitted 30 August, 2011;
originally announced August 2011.
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Renormalized Energies of Superfluorescent Bursts from an Electron-Hole Magneto-plasma with High Gain in InGaAs Quantum Wells
Authors:
J. -H. Kim,
J. Lee,
G. T. Noe,
Y. Wang,
A. K. Wójcik,
S. A. McGill,
D. H. Reitze,
A. A. Belyanin,
J. Kono
Abstract:
We study light emission properties of a population-inverted 2D electron-hole plasma in a quantizing magnetic field. We observe a series of superfluorescent bursts, discrete both in time and energy, corresponding to the cooperative recombination of electron-hole pairs from different Landau levels. The emission energies are strongly renormalized due to many-body interactions among the photogenerated…
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We study light emission properties of a population-inverted 2D electron-hole plasma in a quantizing magnetic field. We observe a series of superfluorescent bursts, discrete both in time and energy, corresponding to the cooperative recombination of electron-hole pairs from different Landau levels. The emission energies are strongly renormalized due to many-body interactions among the photogenerated carriers, exhibiting red-shifts as large as 20 meV at 15 T. However, the magnetic field dependence of the lowest Landau level emission line remains excitonic at all magnetic fields. Interestingly, our time-resolved measurements show that this lowest-energy burst occurs only after all upper states become empty, suggesting that this excitonic stability is related to the `hidden symmetry' of 2D magneto-excitons expected in the magnetic quantum limit.
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Submitted 28 May, 2012; v1 submitted 15 September, 2010;
originally announced September 2010.
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Charge order, dynamics, and magneto-structural transition in multiferroic LuFe$_2$O$_4$
Authors:
X. S. Xu,
M. Angst,
T. V. Brinzari,
R. P. Hermann,
J. L. Musfeldt,
A. D. Christianson,
D. Mandrus,
B. C. Sales,
S. McGill,
J. -W. Kim,
Z. Islam
Abstract:
We investigated the series of temperature and field-driven transitions in LuFe$_2$O$_4$ by optical and Mössbauer spectroscopies, magnetization, and x-ray scattering in order to understand the interplay between charge, structure, and magnetism in this multiferroic material. We demonstrate that charge fluctuation has an onset well below the charge ordering transition, supporting the "order by fluc…
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We investigated the series of temperature and field-driven transitions in LuFe$_2$O$_4$ by optical and Mössbauer spectroscopies, magnetization, and x-ray scattering in order to understand the interplay between charge, structure, and magnetism in this multiferroic material. We demonstrate that charge fluctuation has an onset well below the charge ordering transition, supporting the "order by fluctuation" mechanism for the development of charge order superstructure. Bragg splitting and large magneto optical contrast suggest a low temperature monoclinic distortion that can be driven by both temperature and magnetic field.
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Submitted 24 October, 2008; v1 submitted 25 September, 2008;
originally announced September 2008.
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High-Performance, Hysteresis-Free Carbon Nanotube FETs via Directed Assembly
Authors:
S. A. McGill,
S. G. Rao,
P. Manandhar,
S. Hong,
P. Xiong
Abstract:
High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical v…
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High-performance single-wall carbon nanotube field-effect transistors (SWNT-FETs) are fabricated using directed assembly and mass-produced carbon nanotubes (CNTs). These FETs exhibit operating characteristics comparable to state-of-the-art devices, and the process provides a route to large-scale functional CNT circuit assembly that circumvents problems inherent in processes relying on chemical vapor deposition (CVD). Furthermore, the integration of hydrophobic self-assembled monolayers (SAMs) in the device structure eliminates the primary source of gating hysteresis in SWNT-FETs, which leads to hysteresis-free FET operation while exposing unmodified nanotube surfaces to ambient air.
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Submitted 26 May, 2006;
originally announced May 2006.
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Dynamic Kerr Effect and Spectral Weight Transfer in the Manganites
Authors:
S. A. McGill,
R. I. Miller,
O. N. Torrens,
A. Mamchik,
I-Wei Chen,
J. M. Kikkawa
Abstract:
We perform pump-probe Kerr spectroscopy in the colossally magnetoresistive manganite Pr0.67Ca0.33MnO3. Kerr effects uncover surface magnetic dynamics undetected by established methods based on reflectivity and optical spectral weight transfer. Our findings indicate the connection between spin and charge dynamics in the manganites may be weaker than previously thought. Additionally, important dif…
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We perform pump-probe Kerr spectroscopy in the colossally magnetoresistive manganite Pr0.67Ca0.33MnO3. Kerr effects uncover surface magnetic dynamics undetected by established methods based on reflectivity and optical spectral weight transfer. Our findings indicate the connection between spin and charge dynamics in the manganites may be weaker than previously thought. Additionally, important differences between this system and conventional ferromagnetic metals manifest as long-lived, magneto-optical coupling transients, which may be generic to all manganites.
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Submitted 18 March, 2004; v1 submitted 19 November, 2003;
originally announced November 2003.
